JPH0513491A - 被覆ワイヤのワイヤボンデイング方法及び半導体装置 - Google Patents

被覆ワイヤのワイヤボンデイング方法及び半導体装置

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Publication number
JPH0513491A
JPH0513491A JP3328836A JP32883691A JPH0513491A JP H0513491 A JPH0513491 A JP H0513491A JP 3328836 A JP3328836 A JP 3328836A JP 32883691 A JP32883691 A JP 32883691A JP H0513491 A JPH0513491 A JP H0513491A
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JP
Japan
Prior art keywords
wire
covered
bump
joint
external lead
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3328836A
Other languages
English (en)
Inventor
Hideaki Kawaguchi
秀明 川口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Publication of JPH0513491A publication Critical patent/JPH0513491A/ja
Pending legal-status Critical Current

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  • Wire Bonding (AREA)

Abstract

(57)【要約】 【目的】被覆ワイヤと外部リードとの接合強度を増大さ
せる。 【構成】外部リードＢに被覆ワイヤ１を押圧して接着し
た後に、ワイヤ２の先端を溶融して成形したボール2a
を、外部リードＢと被覆ワイヤ１との接合部Ｃ上に圧着
させ切断してバンプ2bを形成し、該バンプ2bで接合部Ｃ
を覆う。外部リードＢ上に接着した被覆ワイヤ１の端部
からその周囲の外部リードＢ上に亙ってバンプ2bが形成
されることにより、バンプ2b成形時の熱で芯線1a外部リ
ードＢ表面との間に残留した被覆層1bが排除されると共
に、外部リードＢの表面に対する接合面積が拡大する。

Description

【発明の詳細な説明】
【０００１】
【産業上の利用分野】本発明は、被覆ワイヤを用いたワ
イヤボンディング方法及び半導体チップ上の電極と外部
リードとの間を被覆ワイヤで接続した半導体装置に関す
る。
【０００２】
【従来の技術】従来、この種の被覆ワイヤのワイヤボン
ディング方法及び半導体装置として、予め被覆ワイヤの
被覆層を除去せずにキャピラリで被覆ワイヤを外部リー
ドに押し付け、必要に応じて熱や超音波振動を加えるこ
とにより、被覆層を芯線から剥離除去して接着させるも
のがある。
【０００３】
【発明が解決しようとする課題】しかし乍ら、このよう
な従来の被覆ワイヤのワイヤボンディング方法及び半導
体装置では、剥離した被覆層が芯線と外部リード表面と
の間に残留するため、この残留した被覆層がボンディン
グの邪魔となって接合強度が低く、接触不良やリードは
がれの原因となると共に、電気抵抗も増大してボンディ
ング部の信頼性が低く、安心して被覆ワイヤを使用でき
ないという問題がある。
【０００４】本発明は斯る従来事情に鑑み、被覆ワイヤ
と外部リードの接合強度を増大させることを目的とす
る。
【０００５】
【課題を解決するための手段】上記課題を解決するため
に本発明が講ずる技術的手段は、外部リードに被覆ワイ
ヤを押圧して接着した後に、裸ワイヤの先端を溶融して
成形したボールを、外部リードと被覆ワイヤとの接合部
上に圧着させ切断してバンプを形成し、該バンプで接合
部を覆うことを特徴とするものである。
【０００６】裸ワイヤ及びバンプは、被覆ワイヤの芯線
と同種金属又は異種の金属で作製する。
【０００７】
【作用】本発明は上記技術的手段によれば、外部リード
上に接着した被覆ワイヤの端部からその周囲の外部リー
ド上に亙ってバンプが形成されることにより、バンプ成
形時の熱で芯線と外部リード表面との間に残留した被覆
層が排除されると共に、外部リードの表面に対する接合
面積が拡大するものである。
【０００８】そして、裸ワイヤ及びバンプを被覆ワイヤ
の芯線と異種の金属にすることにより、芯線と同材質の
バンプに比べ、外部リード表面に対して接合強度が高め
られる場合がある。
【０００９】即ち芯線とは異種金属にした方が、バンプ
用ろう材の選択の範囲が広くなるため、適切なろう材を
選択しやすいが、同材質のバンプであっても芯線の材質
次第では、高い接合強度が得られる。
【００１０】
【実施例】以下、本発明の一実施例を図面に基づいて説
明する。この実施例は図１に示す如く半導体装置が、パ
ッケージ基板Ｐに取り付けられた半導体チップＡの上面
に電極Ａ1 を多数形成し、パッケージ基板Ｐの周囲部に
は、例えば少なくとも表面がＡｇにより形成された外部
リードＢを多数形成するものである。
【００１１】また、図２に示す如くボンディングツール
として被覆ワイヤ１を挿通するキャピラリ３と別に、被
覆されない裸ワイヤ２が挿通するキャピラリ４を設け、
キャピラリ３の作動に伴って半導体チップＡの電極Ａ1
にボールボンディングした被覆ワイヤ１を、超音波併用
の熱圧着法（ステッチボンド法）により外部リードＢ上
に接着し、キャピラリ３を引上げると同時に被覆ワイヤ
１は切断され、キャピラリ３は接着位置から遠ざかる。
【００１２】これと並行して、キャピラリ４の裸ワイヤ
２先端を加熱開始する。（これは裸ワイヤ２先端を溶融
して形成したボール2aを外部リードＢと被覆ワイヤ１の
接合部Ｃ上に圧着させ、このバンプで接着部Ｃを覆うキ
ャピラリ４の動作の始まりである。）
【００１３】被覆ワイヤ１は、Ａｕ，Ａｇ，Ｃｕ，Ａ
ｌ，Ｐｄやこれらを主要元素とする合金等の金属で芯線
1aを作製し、この芯線1aの表面に絶縁性の合成樹脂、詳
しくはホルマール，ポリウレタン，ポリエステル，ポリ
イミド，ポリエステルイミド，ポリアミドイミド，ポリ
アミド，ポリカーボネイド，アクリル樹脂系塗料，フッ
素樹脂系塗料を、例えば 0.1〜 2.0μm コーティングし
て被覆層1bを形成する。
【００１４】被覆されない裸ワイヤ２は、上記芯線1aと
同材質の金属か，又は芯線1aの材質と異種の金属で被覆
ワイヤ１の線径より例えば０〜34％細く形成する。
【００１５】上記異種の金属とは、Ｐｂ，Ｓｎ，Ｉｎの
何れか一つを主要元素とするはんだ材か、又は芯線1aの
材質を主要元素としてこれに添加元素を配合したろう材
か、或いは芯線1aの材質と接着性の良い特定異種金属材
からなる。
【００１６】はんだ材は、例えば急冷凝固法により作製
して、その先端に溶融形成されるボール3aの根本部の引
張り強度が、ワイヤ部の引張り強度に比べて小さくなる
ようにすると共に、添加元素としてＢｅ，Ｂ，Ｃ，Ｍ
ｇ，Ａｌ，Ｓｉ，Ｐ，Ｃａ，Ｔｉ，Ｖ，Ｃｒ，Ｍｎ，Ｆ
ｅ，Ｃｏ，Ｎｉ，Ｃｕ，Ｚｎ，Ｇａ，Ｇｅ，Ｓｅ，Ｚ
ｒ，Ｎｂ，Ｍｏ，Ｐｄ，Ａｇ，Ｃｄ，Ｉｎ，Ｓｎ，Ｐ
ｂ，Ｓｂ，Ｔｅ，Ｉｒ，Ｐｔ，Ａｕ，Ｔｌ，Ｂｉの中か
ら１種又は２種以上を配合する。
【００１７】ろう材は、例えば芯線1aの材質がＡｕの場
合、高純度ＡｕにＳｎ，Ｓｉ，Ｇｅ，Ａｇ，Ｐｂ，Ｉ
ｎ，Ｓｂ，Ｇａ，Ｓｂ等の中から１種又は２種以上を配
合したものや、高純度ＡｕにＣａを５〜１００重量ｐｐ
ｍと、Ｙを１００〜５００重量ｐｐｍと、Ｇｅを３０〜
１００重量ｐｐｍかＢｅを５〜１５重量ｐｐｍの１種又
は２種とを配合したものである。
【００１８】芯線1aの材質がＡｇ，Ｃｕ，Ａｌ，Ｐｄや
これらを主要元素とする合金等の場合には、これに類似
または適切なろう材とする。
【００１９】芯線1aの材質と接着性の良い特定異種金属
材は、例えば芯線1aの材質がＡｕの場合、Ａｇ，Ｃｕ，
Ａｌ等であり、芯線1aの材質がＡｇの場合には、Ｃｕ，
Ａｌ等であり、芯線1aの材質がＡｌの場合には、Ａｕ，
Ｃｕ，Ａｇ等である。
【００２０】上述した裸ワイヤ２を、図２に示す如くキ
ャピラリ４に挿通して、その先端を例えば電気トーチ等
の放熱手段５で加熱することにより、溶融してボール2a
を形成する。
【００２１】そして、上記キャピラリ３の作動に伴い被
覆ワイヤ１を半導体チップＡの電極Ａ1 から外部リード
Ｂへ順次ワイヤボンディングしている際中において、こ
のキャピラリ３の作動に悪影響を与えない位置関係とな
った時に、裸ワイヤ２が挿通されるキャピラリ４を、図
３に示す如く外部リードＢと被覆ワイヤ１の端部との接
合部Ｃへ向けて下降させ、その先端に形成されたボール
2aを該接合部Ｃ上に圧着させる。
【００２２】次に、ボール2aを接合部Ｃに圧着させた状
態で、図４に示す如くキャピラリ４を引き上げることに
より、ボール2aの根本部で裸ワイヤ２から切断され、バ
ンプ2bが外部リードＢ上に接着した被覆ワイヤ１の端部
からその周囲の外部リードＢ表面に亙り形成されて接合
部Ｃを覆う。
【００２３】この時、バンプ2b形成時の熱によって、芯
線1aと外部リードＢ表面との間に残留した被覆層1bが溶
け蒸発して排除されると共に、外部リードＢとの接合面
積が被覆ワイヤ１の端部だけでなく、バンプ2bが形成さ
れるその周囲まで拡大する。
【００２４】総ての接合部Ｃにバンプ2bが形成され、そ
の後，必要に応じて半導体チップＡ及びボンディングし
た被覆ワイヤ１を合成樹脂等で気密封止することによ
り、半導体装置が完成される。
【００２５】従って、本実施例のものは被覆ワイヤ１を
挿通するキャピラリ３と別に、裸ワイヤ２が挿通するキ
ャピラリ４を設けて、被覆ワイヤ１のボンディング作業
と同時に、バンプ2bを順次連続的に形成するので、ボン
ディング作業のみを行うものに比べても、作業時間がさ
ほど変わらず、高速対応できる。
【００２６】尚、前示実施例ではボール2aを接合部Ｃに
圧着させた状態で裸ワイヤ２を引張ることにより、ボー
ル2aの根本部から切断したが、これに限定されず、例え
ば電気トーチ等で切断しても良い。
【００２７】また、総ての電極Ａ1 と外部リードＢとを
夫々被覆ワイヤ１で接続した後に、バンプ2bを順次形成
しても良い。
【００２８】
【発明の効果】本発明は上記の構成であるから、以下の
利点を有する。
【００２９】１．外部リード上に接着した被覆ワイヤの
端部からその周囲の外部リード上に亙ってバンプが形成
されることにより、バンプ成形時の熱で芯線と外部リー
ド表面との間に残留した被覆層が排除されると共に、外
部リードの表面に対する接合面積が拡大するので、被覆
ワイヤと外部リードとの接合強度を増大させることがで
きる。
【００３０】従って、剥離した被覆層が芯線と外部リー
ド表面との間に残留して接合強度が低い従来のものに比
べ、接触不良やリードはがれが発生しないと共に、電気
抵抗も低くてボンディング部の信頼性を確保でき、安心
して被覆ワイヤを使用することができ、その結果として
配線のショートを防止できる。
【００３１】２．裸ワイヤ及びバンプを被覆ワイヤの芯
線と異種の金属にすることにより、芯線と同材質のバン
プに比べ、外部リード表面に対して接合強度が高められ
るので、被覆ワイヤと外部リードとの接合部を補強でき
る。従って、ボンディング部の信頼性が更に向上する。
【００３２】３．異種の金属として、はんだ材か又はろ
う材を裸ワイヤ及びバンプに使用した場合には、芯線と
同材質のバンプに比べ、低温度でバンプを形成でき、バ
ンプ形成作業が容易になる。
【図面の簡単な説明】
【図１】本発明の一実施例を示す半導体装置の部分拡大
縦断面図である。
【図２】本発明の一実施例を示す被覆ワイヤのワイヤボ
ンディング方法の縦断面図で被覆ワイヤを外部リードに
接着する直前を部分拡大して示す。
【図３】接合部上にボールを圧着する直前を部分拡大し
て示す縦断面図である。
【図４】ボールを切断してバンプを形成した直後を部分
拡大して示す縦断側面図である。
【符号の説明】 Ａ 半導体チップ Ａ1 電 極 Ｂ 外部リード Ｃ 接合部 １ 被覆ワイヤ 1a 芯線 ２ 裸ワイヤ 2a ボール 2b バンプ

Claims (4)

    【特許請求の範囲】
  1. 【請求項１】外部リードに被覆ワイヤを押圧して接着し
    た後に、裸ワイヤの先端を溶融して成形したボールを、
    外部リードと被覆ワイヤとの接合部上に圧着させ切断し
    てバンプを形成し、該バンプで接合部を覆うことを特徴
    とする被覆ワイヤのワイヤボンディング方法。
  2. 【請求項２】裸ワイヤに被覆ワイヤの芯線とは異種の金
    属を用いる請求項１記載の被覆ワイヤのワイヤボンディ
    ング方法。
  3. 【請求項３】半導体チップ上の電極と外部リードとの間
    を被覆ワイヤで接続した半導体装置において、前記外部
    リードと被覆ワイヤとの接合部上にバンプを形成して、
    該接合部を覆うことを特徴とする半導体装置。
  4. 【請求項４】バンプに被覆ワイヤの芯線とは異種の金属
    を用いた請求項３記載の半導体装置。
JP3328836A 1990-12-19 1991-12-12 被覆ワイヤのワイヤボンデイング方法及び半導体装置 Pending JPH0513491A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2-403687 1990-12-19
JP40368790 1990-12-19

Publications (1)

Publication Number Publication Date
JPH0513491A true JPH0513491A (ja) 1993-01-22

Family

ID=18513412

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3328836A Pending JPH0513491A (ja) 1990-12-19 1991-12-12 被覆ワイヤのワイヤボンデイング方法及び半導体装置

Country Status (1)

Country Link
JP (1) JPH0513491A (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6896170B2 (en) * 2001-11-20 2005-05-24 Microbonds, Inc. Wire bonder for ball bonding insulated wire and method of using same
EP1617967A2 (en) * 2003-02-20 2006-01-25 Freescale Semiconductor, Inc. Wirebonding insulated wire
US7360675B2 (en) 2002-11-20 2008-04-22 Microbonds, Inc. Wire bonder for ball bonding insulated wire and method of using same
WO2008066190A1 (en) * 2006-11-28 2008-06-05 Kaijo Corporation Wire bonding method and wire bonding apparatus
US8609527B2 (en) * 2009-09-01 2013-12-17 Oki Semiconductor Co., Ltd. Method of manufacturing semiconductor device
JP2017183623A (ja) * 2016-03-31 2017-10-05 ローム株式会社 半導体装置および半導体装置の製造方法
GB2576498A (en) * 2018-08-14 2020-02-26 The Francis Crick Institute Ltd Forming electrical connection between wire electrode and metallic contact surface

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6896170B2 (en) * 2001-11-20 2005-05-24 Microbonds, Inc. Wire bonder for ball bonding insulated wire and method of using same
US7360675B2 (en) 2002-11-20 2008-04-22 Microbonds, Inc. Wire bonder for ball bonding insulated wire and method of using same
EP1617967A2 (en) * 2003-02-20 2006-01-25 Freescale Semiconductor, Inc. Wirebonding insulated wire
JP2007524987A (ja) * 2003-02-20 2007-08-30 フリースケール セミコンダクター インコーポレイテッド 絶縁されたワイヤのワイヤボンディング
EP1617967A4 (en) * 2003-02-20 2008-09-03 Freescale Semiconductor Inc WIRE BONDING METHOD FOR AN INSULATING WIRE
WO2008066190A1 (en) * 2006-11-28 2008-06-05 Kaijo Corporation Wire bonding method and wire bonding apparatus
US8609527B2 (en) * 2009-09-01 2013-12-17 Oki Semiconductor Co., Ltd. Method of manufacturing semiconductor device
JP2017183623A (ja) * 2016-03-31 2017-10-05 ローム株式会社 半導体装置および半導体装置の製造方法
GB2576498A (en) * 2018-08-14 2020-02-26 The Francis Crick Institute Ltd Forming electrical connection between wire electrode and metallic contact surface

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