TWI246731B - Wirebonding insulated wire - Google Patents
Wirebonding insulated wire Download PDFInfo
- Publication number
- TWI246731B TWI246731B TW093104133A TW93104133A TWI246731B TW I246731 B TWI246731 B TW I246731B TW 093104133 A TW093104133 A TW 093104133A TW 93104133 A TW93104133 A TW 93104133A TW I246731 B TWI246731 B TW I246731B
- Authority
- TW
- Taiwan
- Prior art keywords
- wire
- electrical connection
- insulated
- welding
- offset
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
- B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
- B23K20/004—Wire welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/38—Conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45016—Cross-sectional shape being elliptic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45139—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45164—Palladium (Pd) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
- H01L2224/45169—Platinum (Pt) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/4556—Disposition, e.g. coating on a part of the core
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45565—Single coating layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/4554—Coating
- H01L2224/45599—Material
- H01L2224/4569—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48471—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area being a ball bond, i.e. wedge-to-ball, reverse stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48699—Principal constituent of the connecting portion of the wire connector being Aluminium (Al)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85043—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a flame torch, e.g. hydrogen torch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8503—Reshaping, e.g. forming the ball or the wedge of the wire connector
- H01L2224/85035—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball"
- H01L2224/85045—Reshaping, e.g. forming the ball or the wedge of the wire connector by heating means, e.g. "free-air-ball" using a corona discharge, e.g. electronic flame off [EFO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/852—Applying energy for connecting
- H01L2224/85201—Compression bonding
- H01L2224/85205—Ultrasonic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/85951—Forming additional members, e.g. for reinforcing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85986—Specific sequence of steps, e.g. repetition of manufacturing steps, time sequence
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00015—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20752—Diameter ranges larger or equal to 20 microns less than 30 microns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/20—Parameters
- H01L2924/207—Diameter ranges
- H01L2924/20754—Diameter ranges larger or equal to 40 microns less than 50 microns
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
Description
1246731 玖、發明說明·· 【發明所屬之技術領域】 更特定言之,其係與一 種絕 本發明係與線及絲焊有關 緣線絲焊方法有關。 【先前技術】 日和體f路(integmed eireuit ; IC)晶粒為形成於一諸如 =晶0之半導體晶圓上的—小型裝置。此晶粒通常係從該 切割下來,並附著於一基板或基礎载體上用於互連 2分佈。接著,晶粒上的焊墊藉由絲焊與該載體上的引線 電性連接。不斷需要有更密集的積體電路⑽,且該IC之印 跡的尺寸不應有相應之增加。還需要有更多㈣入及輸 出,使晶片與其封裝之間具有高密度的連接,並需要有精 細的間距與超精細間距的絲焊。由於已將焊塾之間的間隔 減j來今納更多數$的焊墊,故焊線直徑亦應減小。例 如,在63 _間距之應用中使用了直徑25 _的線,而在兄 叫與44叫間距之應用中要使用直徑20.3 _的線。現在已 經發展到能在37μηι間距之應用中使用直徑17_的線。 線直徑的減小給操作及絲焊造成困難。在模造階段,使 用更小直徑線的零件容易遭到更多線掃除拒絕,這會造成 線短路。此等線掃除及短路可藉由使用絕緣或塗佈線來減 少。然而,當使用塗佈線,特別是為該第二焊接使用時, 很難獲得良好的焊接品質。即’一絲焊機要在裝置焊墊處 進行第一焊接,並在載體焊墊處進行第二焊接。使用絕緣 線的一普遍問題是在該第二焊接上不能黏合。
O:\91\91206.DOC 1246731 【發明内容】 、本^ ^提供-種使用標準超聲波絲烊機的方法,其可 善5亥第—焊接的痒接品質,产而、隹 ^ 應用中的使用。 ★而進一步提高絕緣線在絲谭 【實施方式】 /文中參考附圖所作的詳細說明旨在說明本發明目前的 較佳具體實施例,並非代表 、 ^ 非代表本鲞明的唯一實施形式。應明 白,藉由包含在本發明之精φ ^ 精神及乾彆内的不同具體實施 例,可貫現相同或相當的功能。 為方便說明’圖式中的某些特徵被放大,圖式及直中的 兀件不—定為正確的比例。然而,熟習此項技 明白此類細節。圖式中,相鬥沾私谷易 α式甲相同的數字係用來表示相同的元 件。 树明為—電性連接,用於連接U置之—焊塾及 一第二裳置之-焊墊。該電性連接包括一第一絲焊,用於 將-絕緣焊線之-第一部分固定至該第一裝置焊塾。一第 二絲焊將該絕緣焊線之—第二部分固定至該第二裝置焊 墊。—凸起形成於該第二絲焊之上,其可提高該第二絲焊 的剝離強度。該凸起係從該第二絲焊之一中心處偏移,偏 移距離較佳應約為凸起之一直徑的一半。在一較佳具體實 施例中,該凸起係由金形成。 、 壯本發明亦提供一種用於將一第一裝置電性連接至一第二 j的方法。該方法包括形成一第一焊接、一第二焊接及 4第一#接上之一凸起的步驟。該第一焊接係藉由將一絕
0:^1\912〇6.D〇C 1246731 2之-第_部分料至該第—裝置之—焊塾上而形成, =性連接該焊線㈣第—裝置。該第二焊接储由將該 :緣線之一第二部分絲焊至該第二裝置之-焊塾上而形 、’其電性連接該第—裝置與第二裝置。形成於該第二焊 妾上的凸起係、從該第二焊接之—中心處偏移。 現在參考圖卜其顯示依據本發明之—電性連接的—放大 :視圖:該電性連接使一第一裝置之—焊塾ι〇與—第二裝 之…焊塾12連接,從而使該等第-與第二裝置電性連 。该第-裝置可以為一半導體裝置,諸如形成於—矽基 :上的-積體電路。該第二裝置亦可以為一半導體震置, =° 一堆疊晶粒組態中-底部或下部晶粒。然而在目前的 季父仏具體貫施例中兮楚— J T W亥弟一I置為一載體,且第二裝置焊 W2為該載體之—引線。該等第_與第二袭置及其焊塾之 類型已為熟習此項技術者所瞭解,且無須為完全理解本發 明而做詳細說明。 該電性連接包括—絕緣焊線14,其具有-第-絲焊16, 將絕緣坪線14之一第-部分或端部固定至第-裝置焊塾10 ^。:第二絲焊18將絕緣焊線14之一第二部分固定至第二 ^置焊塾12上。在目前的較佳具體實施例中,第-絲焊16 為一球形焊接’第二絲焊18為一針腳形焊接。 々桁Π°絲丈干」公涊為指晶片與基板經由線之互連。將該 等線接合至¥墊取常用的方法或是經由熱超聲波焊接或是 =波焊接。超聲波料使用振動與力的組合來摩擦線盘 文干墊間的介面,造成届邱、、w^ I风局邛Μ度升回,從而促進橫跨邊界之
O:\91\91206.DOC 1246731 -子的擴散。而熱超聲波焊接除振 其進一步促進了材料的移動。在球形焊接中^了熱, 保持線。使形成於該線之H球體 =細管 受壓。該球體可以氫焰或火花方弋开 "細官表面 隨後’當其對著該第,保持該球趙: 二=波振動,將球雜焊接至該晶粒上。此舉稱為 干接至曰曰粒上,將仍保持線的該毛細 e私至―弟二烊墊之上’料墊將與第-料電性連接。 要形成-針腳形焊接,需使線正對第二焊墊受壓,形成_ ,形燁接。錢再:欠施加H皮能量,直至將線焊接至 第一 4墊。隨後將毛細管提g,從該焊接移開,折斷線。 此針腳形焊接稱為第二焊接。針腳形焊接與球形焊接均為 熟S此項技術者所熟知。 雖然針腳形焊接已為吾人所熟知,但在使用絕緣線時, 很難獲得一良好的第二絲焊。通常,不牢固的第二焊接係 由於在線與焊接引線之間仍存在線絕緣,阻止了良好黏 合。即在線與引線之間僅有少量接觸區域,其位於第二焊 接之尾部區域。在該線對面,將該絕緣體之一更大部分在 楔形構造過程中拿掉。該不牢固的黏合在線剝離測試結果 中顯而易見。在一線剝離測試中,將一鉤置於最接近第二 焊接的線之下,並施加一提升力,藉此測試第二焊接的強 度。絕緣精細線及絕緣超精細線通常顯示出甚低的線剝離 強度。為克服低線剝離強度問題,於第二絲焊18上形成一 凸起20。
O:\91\91206.DOC 1246731 見在多考圖2 ’其顯示該第二絲焊1 8之一大幅放大的示意 圖。可以看到,凸起2〇係從第二絲焊丨8處偏移。在本發明 目刖之一較佳具體實施例中,凸起2〇偏移的距離約為其直 桎「d」的一半。凸起2〇的直徑在相當程度上需依據其得以 形成的線14的直徑。對於直徑為25 μιη的線,凸起2〇的直徑 可以為約40至約50 μηι。例如,就乃μπι〇密爾)線而言,凸 起20的直徑可控制在約45與55 之間。為提供良好黏合, 凸起20較佳應由與線14之導電材料相同的材料形成。例 如,若線14具有一金質導電核心,則凸起2〇較佳應由金形 成。在本發明之-具體實施例中,—⑼㈣塗佈金線係絲谭 至一 76 μιη X 76 μηι的焊墊上。形成於該焊墊上之凸起的直 徑約為3 5 μηι。 凸起20可以與形成第一絲焊16相同之方式,諸如採用氫 焰或高壓電火花的方式形成或沈積於第二裝置焊墊丨之之 上。更特定言之,一球體係形成於該絲焊機中之線14的一 鈿形成的球體正對絲焊機毛細管的表面受壓。該毛細管 對著第二絲焊18推動球體,隨後,當其對著焊墊12保持該 球體時,施加超聲波振動,將球體焊接至第二絲焊Μ及焊 墊12。一旦球體已洋接至焊墊12 ’即可在上提毛細管時, 藉由夾住毛細管上的線來切斷已焊接球體上的線^球體上 方的線區域最不牢固,將其空出,僅留下凸起2〇。凸起2〇 可採用目前可利用的絲焊機,諸如Kulicke與s〇ffa 8〇6〇絲烊 機來形成,而無須修改毛細管。 圖3為圖1之焊線14之放大斷面圖。通常,金與鋁為製造
O:\91\91206.DOC -10- 1246731 谭線最常用的元件。金盘扭的 四 金,、鋁均有硬度及延展性,並在多數 ^兄下”有類似的電阻。為加強穩定性’有時用諸如鈹、 約等摻雜劑對金線摻雜。直徑較小的銘線常常用石夕或有時 用鎂來4 #,以改善其折斷負荷及延長參數。除金與銘之 外,亦已知有銅、把合金、翻或銀質烊線。本發明之焊線 14包括塗佈有電絕緣材料24的一導電核心22,適用於精細 間距及超精細間距之絲嬋。谭線14具有小於約55 μηι且可小 ;μπι之直徑。核心22較佳應包括金或銅,且絕緣材料 2/為一有機絕緣塗層,厚度為約〇5至約2〇 _,在流通空 氣球體形成過程中可纟曹夸献八4力 狂Y J延又熱刀解。而且,焊線14較佳應具 有約180。至260οΓ66 —、、四侖τ 朴丄 王C的/皿度丁g,其中,丁g指軟化溫度,亦稱 為玻璃轉變溫度。 參考圖4,其顯示不同線與絲谭之剝離強度的曲線圖。點 4〇表示採用標準楔形焊接的一標準2〇㈣直徑(未塗佈)線的 制離強度約為7 gm。點42表示依據本發明採用標準楔形焊 接與凸起20的-標準2〇 μιη直徑(未塗佈)線的剝離強度約為 6.5gm,比無凸起的焊接小〇 5gm。點44表示採用標準楔形 知接的一 23 μιη直徑塗佈線的剝離強度。該剝離強度僅約為 2 gm此強度甚低。與此相反,點46表示依據本發明採用 標準楔形焊接與凸起2〇的該23 μιη直徑塗佈線的剝離強 度。包括凸起20的該塗佈線與谭接具有約51㈣的剝離強 度,與無凸起焊接相比,此係、—重大改善。然@,其結果 卻有些令人吃驚,因為事實發現,當該絲焊包括一凸起時, 未塗佈線的剝離強度降低了。
O:\91\91206.DOC -11 - 1246731 業已發現本發明能提供以下好處:⑷當以一標準絲焊機 使用絕緣線時,由於該第二焊接處的「未能在引線上黏 合」,零件拒絕現象幾乎可以消除;(b)以一增加的線拉動/ 線剝離強度來提高位於第二焊接處的絕緣線的邊界性;⑷ 热須採用新的或修改過的絲焊設備,且在執行該第二焊接 刼作則亦不需要進行任何額外的升級來移除該線上的絕緣 層,(d)減少了模造處的線短路拒絕現象;(e)無須使用具有 甚精細之填充劑的昂貴模造化合物;⑴使用的精細塗佈線 能夠橫向焊接;以及(g)焊墊/晶粒設計規則無須僅限於周邊 焊墊。 本發明較佳具體實施例之說明係為了說明及描述本發 月並不希望包攬無遺或將本發明限於所揭露的形式。熟 習此項技術者應明白,可對上述具體實施例進行修改,而 不背離本發明之寬廣的發明概念。本發明適用於所有絲焊 封裝類型,包括但不限於BGA、qfn、QFp、π%、 CUEBGA、TBG^TS〇p封裝。因此,應明瞭本發明不限 定於所揭示的特定具體實施例,而是涵蓋由所附申請專利 範圍定義的本發明之精神及範疇内的修改。 【圖式簡單說明】 當配合附圖詳讀前面的發明内容及上文中的本發明一較 佳具體實施例之詳細說明時,將可更明白本發明。基於解 。兒本毛月之目的,圖式中顯示本發明目前的較佳具體實施 例。但是,應明白,本發明不限定於如圖所示的精確配置 及機構。圖式中: O:\91\91206.DOC -12- 1246731 圖1為依據本發明之一電性連接的放大侧視圖,· 圖2為圖1之第二絲焊之一放大側視圖; 圖3為圖1之焊線的放大斷面圖,·以及 圖4為使用各種線及絲焊的該第二焊接之剝離強度的曲 線圖。 【圖式代表符號說明】 10 焊墊 12 焊墊 14 絕緣焊線 16 第一絲焊 18 弟二絲焊 20 凸起 22 導電核心 24 絕緣材料 40 、 42 、 44 、 46 點 d 直徑
O:\91\91206.DOC 13
Claims (1)
- 1^4^7(3^33 號專利申請案 中文申請專利範圍替換本(94年7月) 拾、申請專利範圍·· 1· 一種將一第一裝置與一第二裝置電性連接之方法,該方 法包括如下步驟: 藉由將一絕緣線之一第一部分絲焊至該第一裝置之一 焊塾上而形力-第-焊#,從❿電性連接該焊線與該第 一裝置; X 藉由將該絕緣線之一第二部分絲焊至該第二裝置之一 焊墊上而形成一第二焊接,從而電性連接該第一裝置盥 該第二裝置;以及 ^ 於該第二焊接上形成^一 /L Jbp , 心成凸起,其中該凸起係從該第二 焊接之一中心處偏移。 2. ^申請專利範圍P項之電性連接方法,其中位於該第二 焊接上的該凸起偏移的距離約為該凸起之一直徑的一 其中該凸起具有 其中該凸起係由 3·如申請專利範圍第1項之電性連接方法 約40至50 μπι的一直徑。 4·如申請專利範圍第1項之電性連接方法 金形成。 5.如申請專利範圍第i項之 &目士 逆接方法,其中該絕緣線 括八有—有機絕緣塗層的-金或鋼線之… 6·如申請專利範圍第5 .? 电性連接方法,其中該絕緣線 有小於或專於約2 5 μχη的一直彳里。 7·如申請專利範圍第6項之 ^ ^ , Λ 連接方法,其中該絕緣塗 具有約為〇·5 μπι至2.0 的一 O:\91\91206-940727.DOC 1246731 8. 9. 10. 11. 12. 13. 14. 15. 如申請專利範圍第7項之電性連接方法,其中該絕緣塗層 具有約為180。至260°C的一温度Tg。 如申請專利項之電性連接方法,其中該第一焊接 包括一球形焊接。 如申請專利範圍第1項之電性連接方法,#中該第二焊接 包括一針腳形焊接。 如申請專利範圍第丨項之電性連接方法,其中該第二裝置 包括一載體。 種提形焊接至-引線的_塗佈線之—第二絲焊之 強度之方法,該方法包括如下步驟: β於該第二焊接上形成一凸起,其中該凸起係從該第二 焊接之一中心處偏移。 種用於連接-第一農置之一悍塾及一第二裝置之一焊 塾之電性連接,該電性連接包括: 一弟一絲谭,其係將一絕緣焊線之一第一部分固定至 該第一裝置焊墊上; :第二絲焊,其係將該絕緣焊線之一第二部分固定至 遠第二裝置焊塾上;以及 -凸起’其係形成於該第二絲焊之上,其中該凸起係 從該第二絲焊處偏移。 如申請專利範圍第13項之電性連接,其中位於該第二焊 接上的該凸起偏移的距離約為該凸起之一直徑的一半。 如申請專利範圍第13項之電性連接,其中該凸起具有約 40至50 μηι的一直徑。 0:\91\91206-940727.DOC
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/372,061 US6854637B2 (en) | 2003-02-20 | 2003-02-20 | Wirebonding insulated wire |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200416915A TW200416915A (en) | 2004-09-01 |
TWI246731B true TWI246731B (en) | 2006-01-01 |
Family
ID=32868472
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093104133A TWI246731B (en) | 2003-02-20 | 2004-02-19 | Wirebonding insulated wire |
Country Status (7)
Country | Link |
---|---|
US (1) | US6854637B2 (zh) |
EP (1) | EP1617967A4 (zh) |
JP (1) | JP2007524987A (zh) |
KR (1) | KR20050102660A (zh) |
CN (1) | CN100430176C (zh) |
TW (1) | TWI246731B (zh) |
WO (1) | WO2004075347A2 (zh) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7261230B2 (en) * | 2003-08-29 | 2007-08-28 | Freescale Semiconductor, Inc. | Wirebonding insulated wire and capillary therefor |
US7086148B2 (en) * | 2004-02-25 | 2006-08-08 | Agere Systems Inc. | Methods and apparatus for wire bonding with wire length adjustment in an integrated circuit |
US7475802B2 (en) * | 2004-04-28 | 2009-01-13 | Texas Instruments Incorporated | Method for low loop wire bonding |
JP2006324553A (ja) * | 2005-05-20 | 2006-11-30 | Renesas Technology Corp | 半導体装置及びその製造方法 |
US7205673B1 (en) * | 2005-11-18 | 2007-04-17 | Lsi Logic Corporation | Reduce or eliminate IMC cracking in post wire bonded dies by doping aluminum used in bond pads during Cu/Low-k BEOL processing |
JP5481769B2 (ja) * | 2006-11-22 | 2014-04-23 | 日亜化学工業株式会社 | 半導体装置及びその製造方法 |
US20080131998A1 (en) * | 2006-12-01 | 2008-06-05 | Hem Takiar | Method of fabricating a film-on-wire bond semiconductor device |
CA2609018A1 (en) * | 2007-09-28 | 2009-03-28 | Stephane Labelle | Systeme permettant de mieux exploiter la geothermie haute temperature |
JP5062283B2 (ja) | 2009-04-30 | 2012-10-31 | 日亜化学工業株式会社 | 半導体装置及びその製造方法 |
US8283780B2 (en) | 2010-11-25 | 2012-10-09 | Freescale Semiconductor, Inc | Surface mount semiconductor device |
US9613877B2 (en) * | 2013-10-10 | 2017-04-04 | UTAC Headquarters Pte. Ltd. | Semiconductor packages and methods for forming semiconductor package |
TWI594336B (zh) * | 2016-08-15 | 2017-08-01 | Insulation bonding wire | |
CN107731772B (zh) * | 2017-09-13 | 2020-08-04 | 北京无线电测量研究所 | 一种楔形键合引线加固结构和加固方法 |
US10366958B2 (en) | 2017-12-28 | 2019-07-30 | Texas Instruments Incorporated | Wire bonding between isolation capacitors for multichip modules |
DE102020124705A1 (de) | 2020-09-22 | 2022-03-24 | Te Connectivity Germany Gmbh | Verfahren zur Herstellung eines Leitungssystems und Leitungssystem |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5176310A (en) * | 1988-11-28 | 1993-01-05 | Hitachi, Ltd. | Method and apparatus for wire bond |
JPH0513491A (ja) * | 1990-12-19 | 1993-01-22 | Tanaka Denshi Kogyo Kk | 被覆ワイヤのワイヤボンデイング方法及び半導体装置 |
JPH05129357A (ja) * | 1991-11-01 | 1993-05-25 | Tanaka Denshi Kogyo Kk | ボンデイング用ワイヤ |
JPH06291160A (ja) * | 1993-03-31 | 1994-10-18 | Nippon Steel Corp | 半導体装置および半導体装置の製造方法 |
JPH07249648A (ja) * | 1994-03-10 | 1995-09-26 | Nippon Steel Corp | 半導体装置 |
WO1996037333A1 (en) * | 1995-05-26 | 1996-11-28 | Formfactor, Inc. | Ribbon-like core interconnection elements |
JPH1093009A (ja) * | 1996-09-17 | 1998-04-10 | Toshiba Corp | 半導体チップモジュール、マルチチップモジュールおよび電子機器 |
TW398165B (en) * | 1997-03-03 | 2000-07-11 | Hitachi Chemical Co Ltd | Circuit boards using heat resistant resin for adhesive layers |
JPH10335368A (ja) * | 1997-05-30 | 1998-12-18 | Sanyo Electric Co Ltd | ワイヤボンディング構造及び半導体装置 |
JP2001015541A (ja) * | 1999-06-28 | 2001-01-19 | Sumitomo Electric Ind Ltd | 半導体装置および半導体装置の製造方法 |
US20020113322A1 (en) * | 2000-06-12 | 2002-08-22 | Shinichi Terashima | Semiconductor device and method to produce the same |
US6898849B2 (en) * | 2000-09-27 | 2005-05-31 | Texas Instruments Incorporated | Method for controlling wire balls in electronic bonding |
TW465064B (en) * | 2000-12-22 | 2001-11-21 | Advanced Semiconductor Eng | Bonding process and the structure thereof |
US6472743B2 (en) * | 2001-02-22 | 2002-10-29 | Siliconware Precision Industries, Co., Ltd. | Semiconductor package with heat dissipating structure |
CA2363409A1 (en) * | 2001-11-20 | 2003-05-20 | Microbonds, Inc. | A wire bonder for ball bonding insulated wire and method of using same |
JP3584930B2 (ja) * | 2002-02-19 | 2004-11-04 | セイコーエプソン株式会社 | 半導体装置及びその製造方法、回路基板並びに電子機器 |
TW525281B (en) * | 2002-03-06 | 2003-03-21 | Advanced Semiconductor Eng | Wafer level chip scale package |
US20030230796A1 (en) * | 2002-06-12 | 2003-12-18 | Aminuddin Ismail | Stacked die semiconductor device |
-
2003
- 2003-02-20 US US10/372,061 patent/US6854637B2/en not_active Expired - Lifetime
-
2004
- 2004-02-06 WO PCT/US2004/003493 patent/WO2004075347A2/en active Application Filing
- 2004-02-06 CN CNB2004800047144A patent/CN100430176C/zh not_active Expired - Fee Related
- 2004-02-06 EP EP04709010A patent/EP1617967A4/en not_active Withdrawn
- 2004-02-06 JP JP2006503387A patent/JP2007524987A/ja active Pending
- 2004-02-06 KR KR1020057015333A patent/KR20050102660A/ko not_active Application Discontinuation
- 2004-02-19 TW TW093104133A patent/TWI246731B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2004075347A3 (en) | 2004-12-09 |
US6854637B2 (en) | 2005-02-15 |
EP1617967A2 (en) | 2006-01-25 |
JP2007524987A (ja) | 2007-08-30 |
KR20050102660A (ko) | 2005-10-26 |
CN100430176C (zh) | 2008-11-05 |
US20040164126A1 (en) | 2004-08-26 |
WO2004075347A2 (en) | 2004-09-02 |
TW200416915A (en) | 2004-09-01 |
EP1617967A4 (en) | 2008-09-03 |
CN1750901A (zh) | 2006-03-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI246731B (en) | Wirebonding insulated wire | |
US4717066A (en) | Method of bonding conductors to semiconductor devices | |
US7314818B2 (en) | Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment | |
JP2004336043A (ja) | リボンボンディング | |
US6921016B2 (en) | Semiconductor device and method of manufacturing the same, circuit board, and electronic equipment | |
JP2006324553A (ja) | 半導体装置及びその製造方法 | |
JP2002164437A (ja) | ボンディングおよび電流配分を分散したパワー集積回路および方法 | |
TW200901345A (en) | System and method for increased stand-off height in stud bumping process | |
KR101077813B1 (ko) | 절연 와이어의 와이어본딩 및 그를 위한 모세관 | |
US20080251918A1 (en) | Wire Bonds Having Pressure-Absorbing Balls | |
TWI550740B (zh) | 半導體裝置及其製造方法 | |
JP2006013512A (ja) | ワイヤボンディング用キャピラリ | |
WO2005018864A2 (en) | Capillary with contained inner chamfer | |
EP1367644A1 (en) | Semiconductor electronic device and method of manufacturing thereof | |
US6581816B2 (en) | Capillary for bonding copper wires between a semiconductor circuit chip and a corresponding terminal connector of a semiconductor device | |
JPH1056030A (ja) | 半導体装置及びその製造方法 | |
JP2004221264A (ja) | 半導体装置及びその製造方法 | |
JPH08236575A (ja) | 半導体装置及びその製造方法 | |
JP3202193B2 (ja) | ワイヤボンディング方法 | |
JP3233194B2 (ja) | ワイヤボンディング方法 | |
JPH04123434A (ja) | バンプ形成方法 | |
JPH07335684A (ja) | ボンディングワイヤ | |
JPH08199261A (ja) | ボンディングワイヤ | |
JP4318533B2 (ja) | ボールバンプ形成用リボン | |
JP3405615B2 (ja) | 絶縁被覆ワイヤーのボンディング方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |