CN1750901A - 对绝缘线进行引线接合的方法 - Google Patents

对绝缘线进行引线接合的方法 Download PDF

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Publication number
CN1750901A
CN1750901A CNA2004800047144A CN200480004714A CN1750901A CN 1750901 A CN1750901 A CN 1750901A CN A2004800047144 A CNA2004800047144 A CN A2004800047144A CN 200480004714 A CN200480004714 A CN 200480004714A CN 1750901 A CN1750901 A CN 1750901A
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China
Prior art keywords
wire
projection
electrically connected
junction surface
electrical connector
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Granted
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CNA2004800047144A
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CN100430176C (zh
Inventor
F·哈伦
K·B·齐乌
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NXP USA Inc
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Freescale Semiconductor Inc
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Publication of CN1750901A publication Critical patent/CN1750901A/zh
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Abstract

一种电连接件，用于通过绝缘线或涂覆线而使第一装置的接合垫和第二装置的接合垫连接。电连接件包括第一引线接合部，该第一引线接合部将绝缘接合线的第一部分固定在第一装置接合垫上。第二引线接合部将绝缘接合线的第二部分固定在第二装置接合垫上。凸块形成于第二引线接合部上面，且该凸块偏离第二引线接合部。偏离的凸块改善了第二引线接合部，从而使它的剥离强度增加。

Description

对绝缘线进行引线接合的方法
技术领域
本发明涉及线以及引线接合(wirebonding)，特别是涉及一种使绝缘线进行引线接合的方法。
背景技术
集成电路(IC)小片(die)是形成于半导体晶片(例如硅晶片)上的较小装置。这样的小片通常从晶片上切割下来，并安装在基质或基座载体上，用于相互连接和重新分配。在小片上的接合垫通过引线接合而与载体上的导线电连接。目前持续要求更致密的集成电路，同时并不使IC的尺寸或基底面相应增大。还希望有更多通向IC的输入和输出，从而导致在芯片和它们的插件(package)之间有非常密集的连接，并需要细微节距和超细节距的引线接合。当在接合垫之间的间隙减小以便容纳更大量的接合垫时，接合线的直径也减小。例如，63μm节距的情况下使用25μm直径的线，而52μm和44μm节距的情况使用20.3μm直径的线。正在发展37μm节距的用途，其中使用17μm直径的线。
线直径减小使得处理和引线接合困难。使用更小直径的线的部件将在模制阶段引起更高的线弯曲报废(sweep reject)，这可能使得线短路。这样的线弯曲和短路可以通过使用绝缘线或涂覆线来减小。不过，当使用涂覆线时很难获得良好的接合质量，特别是对于第二接合。也就是，引线接合器在装置接合垫上进行第一接合，并在载体接合垫上进行第二接合。在第二接合时不粘结是绝缘线的公共问题。
本发明提供了一种使用标准超声波引线接合器的方法，该方法提高了第二接合的接合质量，从而提高了绝缘线在引线接合用途中的使用。
附图说明
当结合附图阅读时将更好地理解前述简介以及下面对本发明优选实施例的详细说明。为了表示本发明，图中表示了本发明的优选实施例。不过应当知道，本发明并不局限于所示的准确结构和方法。附图中：
图1是本发明的电连接件的放大侧视图；
图2是图1的第二引线接合的放大侧视图；
图3是图1的接合线的放大剖视图；以及
图4是表示使用各种线和引线接合的第二接合的剥离强度的曲线图。
具体实施方式
下面结合附图的详细说明将作为本发明优选实施例的说明，它并不是表示可以实现本发明的仅有方式。应当知道，通过将包含在本发明的宗旨和范围内的不同实施例也可以实现相同或等效的功能。
附图中的特定特征已经进行放大，以便容易图示，且附图和元件并不需要为准确比例。不过，本领域普通技术人员将很容易了解这些细节。在附图中，相同参考标号用于表示相同元件。
本发明是一种用于使第一装置的接合垫(bond pad)和第二装置的接合垫连接的电连接件。该电连接件包括第一引线接合部，该第一引线接合部将绝缘接合线的第一部分固定在第一装置接合垫上。第二引线接合部将绝缘接合线的第二部分固定在第二装置接合垫上。形成于第二引线接合部上面的凸块(bump)提高了第二引线接合部的剥离强度。凸块偏离第二引线接合部的中心，优选是偏离距离为凸块的直径的大约一半。在优选实施例中，凸块由金形成。
本发明还提供了一种使第一装置与第二装置电连接的方法。该方法包括以下步骤：形成第一接合部；形成第二接合部；以及在第二接合部上形成凸块。第一接合部通过使绝缘线的第一部分与第一装置的接合垫进行引线接合而形成，该第一接合部使接合线与第一装置电连接。第二接合部通过使绝缘线的第二部分与第二装置的接合垫进行引线接合而形成，该第二接合部使第一装置与第二装置电连接。形成于第二接合部上的凸块偏离第二接合部的中心。
下面参考图1，图中表示了本发明的电连接件的放大侧视图。电连接件使第一装置的接合垫10与第二装置的接合垫12连接，从而使第一和第二装置电连接。第一装置可以是半导体装置，例如形成于硅基质上的集成电路。第二装置也可以是半导体装置，例如在堆叠的小片结构中的底部或下部小片。不过，在本优选实施例中，第二装置是载体，第二装置接合垫12是载体的引线。第一和第二装置以及它们的接合垫是本领域普通技术人员已知的类型，因此，对它们的详细说明并不是充分理解本发明所必须的。
电连接件包括绝缘接合线14，该绝缘接合线14有第一引线接合部16，该第一引线接合部16将绝缘接合线14的第一部分或第一端固定在第一装置接合垫10上。第二引线接合部18将绝缘接合线14的第二部分固定在第二装置接合垫12上。在本优选实施例中，第一引线接合部16是球接合(ball bond)，而第二引线接合部18是缝接合(stitchbond)。
术语“引线接合”通常的意思是芯片和基质通过线而相互连接。使线与垫连接的最普通方法是通过热声接合或超声波接合。超声波引线接合使用振动和力的组合，以便摩擦所述线和接合垫之间的交界面，从而使得局部温度升高，这促使分子穿过边界扩散。热声接合除了振动外还利用加热，这进一步促使材料迁移。在球接合时，毛细管(capillary)保持所述线。形成于线的一端上的球压靠在毛细管的表面上。小球可以通过氢焰或火花而形成。毛细管将球推靠在接合垫上，然后，当球保持抵靠第一垫时施加超声波振动，这使得球与小片接合。这称为第一接合。一旦球与小片接合，仍然保持着所述线的毛细管运动至第二接合垫上，第一垫将与该第二接合垫电连接。为了形成缝接合，所述线压靠第二垫，从而形成楔形接合。再有，施加超声波能量直到线与第二垫接合。然后，使毛细管从接合处升起，从而使线断开。该缝接合称为第二接合。缝接合和球接合都为本领域技术人员公知。
尽管缝接合为公知的，但是当使用绝缘线时很难获得良好的第二引线接合。通常，由于线绝缘，在线和接合引线之间仍然存在较弱的第二接合，防止了良好的粘接。也就是，在线和引线之间只有较小接触区域，这是第二接合部的尾部区域。在线的相对侧，在楔的形成过程中损失了更大部分的绝缘体。在线剥离测试结果中明显有较弱粘接。在线剥离测试中，挂钩在靠近第二接合处置于线下面，并施加提升力，从而测试第二接合的强度。绝缘细线和绝缘超细线通常有非常低的线剥离强度。为了克服非常低的线剥离强度问题，在第二引线接合部18上形成凸块20。
下面参考图2，图中表示了第二引线接合部18的放大图。如图所示，凸块20偏离第二引线接合部18。在本发明的优选实施例中，凸块20偏离的距离为凸块20的直径“d”的大约一半。凸块20的直径在很大程度上取决于线14的直径，凸块20从该线14上形成。对于25μm直径的线，凸块20的直径为大约40μm至大约50μm。例如，对于25μm(1密耳)的线，凸块20可以控制为在大约45-55μm之间。为了提供良好粘接，凸块20优选是由与线14的导体材料相同的材料而形成。例如，当线14有金导电芯时，凸块20优选是由金形成。在本发明的一个实施例中，将20μm的涂覆金线接合至76μm×76μm的垫上。形成于垫上的凸块的直径为大约35μm。
凸块20可以以与形成第一引线接合部16相同的方式形成或布置在第二装置接合垫12上，例如通过氢焰或高压电火花。特别是，球在引线接合器中形成于线14的一端。形成的球压靠在引线接合器毛细管的面上。毛细管将球推靠在第二引线接合部18上，然后，当使球保持抵靠垫12时，施加超声波振动，该超声波振动使得球粘接在第二引线接合部18上，并与垫12接合。一旦球与垫12接合，通过在毛细管上面夹断线而使得在接合球上面的线断开，同时使毛细管上升。在球上面的线区域(该线区域是最弱点)将取走，从而只留下凸块20。凸块20可以利用目前的引线接合器来形成，例如Kulicke & Soffa 8060引线接合器，同时并不需要改变毛细管。
图3是图1的接合线14的放大剖视图。通常，金和铝是最通常用于制造接合线的元素。金和铝都很坚固和具有延展性，并同样能够耐受大部分环境条件。有时，金线搀杂有杂质，例如铍、钙，以便使它稳定。小直径的铝线通常搀杂有硅或(有时)镁，以便提高它的断裂载荷和延伸参数。除了金和铝，还已知铜、钯合金、铂或银接合线。本发明的接合线14包括涂有电绝缘材料24的导体芯22，并适于细节距和超细节距的引线接合。接合线14的直径小于大约55μm，并能够小于30μm。优选是，芯22包括金或铜，且绝缘材料24是厚度为大约0.5μm至大约2.0μm的有机绝缘涂层，该有机绝缘涂层能够在自由空气球形成时热分解。而且，线14优选是有大约180℃至260℃的Tg，其中，Tg称为软化温度，也称为玻璃转变温度。
参考图4，图中表示了不同线和引线接合的剥离强度曲线图。点40表示使用标准楔接合的标准20μm直径(未涂覆)线的剥离强度为大约7gms。点42表示使用楔接合和本发明凸块20的标准20μm直径(未涂覆)线的剥离强度为大约6.5gms，这比无凸块接合小0.5gms。点44表示使用标准楔接合的标准23μm直径涂覆线的剥离强度。该剥离强度仅为大约2gms，这非常低。相反，点46表示使用楔接合和本发明凸块20的23μm直径涂覆线的剥离强度。涂覆线和包括凸块20的接合具有大约5.1gms的剥离强度，这比无凸块接合大大提高。不过，稍微惊讶的结果是当线接合包括凸块时，未涂覆线的剥离强度降低。
本发明提供了以下优点：(a)当以标准引线接合机器使用绝缘线时，由于在第二接合时在引线上不粘，因此几乎消除了部件的报废；(b)通过提高线拉拔强度/线剥离强度，提高了绝缘线在第二接合时的可接合性；(c)并不需要新的或改进的引线接合设备，且不需要在进行第二接合操作之前除去在线上的绝缘物的附加改进；(d)在模制时线短路废品减少；(e)并不需要具有非常细的填充器的昂贵模具部件；(f)能够使用细涂覆线来交联；以及(g)垫/小片设计准则并不需要仅局限于周边垫。
本发明优选实施例的说明是为了解释和说明，但并不是为了排它或将本发明局限于所述形式。本领域技术人员应当知道，在不脱离本发明的广义概念的情况下可以对上述实施例进行变化。本发明可用于各种引线接合插件类型，包括但不局限于：BGA、QFN、QFP、PLCC、CUEBGA、TBGA和TSOP。因此，应当知道，本发明并不局限于所述特定实施例，而是覆盖在由附加权利要求确定的本发明精神和范围内的变化。

Claims (23)

1.一种使第一装置与第二装置电连接的方法，该方法包括以下步骤：
通过使绝缘线的第一部分与第一装置的接合垫进行引线接合而形成第一接合部，从而使接合线与第一装置电连接；
通过使绝缘线的第二部分与第二装置的接合垫进行引线接合而形成第二接合部，从而使第一装置与第二装置电连接；以及
在第二接合部上形成凸块，其中，该凸块偏离第二接合部的中心。
2.根据权利要求1所述的电连接方法，其中：在第二接合部上的凸块偏离的距离为凸块的直径的大约一半。
3.根据权利要求1所述的电连接方法，其中：凸块的直径为大约40至50μm。
4.根据权利要求1所述的电连接方法，其中：凸块由金形成。
5.根据权利要求1所述的电连接方法，其中：绝缘线包括具有有机绝缘涂层的金线或铜线中的一种。
6.根据权利要求5所述的电连接方法，其中：绝缘线的直径小于或等于大约25μm。
7.根据权利要求6所述的电连接方法，其中：绝缘涂层的厚度为大约0.5μm至2.0μm。
8.根据权利要求7所述的电连接方法，其中：绝缘涂层的Tg为大约180℃至260℃。
9.根据权利要求1所述的电连接方法，其中：第一接合部包括球接合。
10.根据权利要求1所述的电连接方法，其中：第二接合部包括缝接合。
11.根据权利要求1所述的电连接方法，其中：第二装置包括载体。
12.一种提高接合于引线上的涂覆线楔的第二引线接合部的强度的方法，该方法包括以下步骤：
在第二接合部上形成凸块，其中，凸块偏离第二接合部的中心。
13.一种用于使第一装置的接合垫和第二装置的接合垫连接的电连接件，该电连接件包括：
第一引线接合部，该第一引线接合部将绝缘接合线的第一部分固定在第一装置接合垫上；
第二引线接合部，该第二引线接合部将绝缘接合线的第二部分固定在第二装置接合垫上；
凸块，该凸块形成于第二引线接合部上面，其中，凸块偏离第二引线接合部。
14.根据权利要求13所述的电连接件，其中：在第二接合部上的凸块偏离的距离为凸块的直径的大约一半。
15.根据权利要求13所述的电连接件，其中：凸块的直径为大约40至50μm。
16.根据权利要求13所述的电连接件，其中：凸块由金形成。
17.根据权利要求13所述的电连接件，其中：绝缘线包括具有有机绝缘涂层的金线或铜线中的一种。
18.根据权利要求17所述的电连接件，其中：绝缘线的直径小于或等于大约25μm。
19.根据权利要求18所述的电连接件，其中：绝缘涂层的厚度为大约0.5μm至2.0μm。
20.根据权利要求17所述的电连接件，其中：绝缘涂层的Tg为大约180℃至260℃。
21.根据权利要求13所述的电连接件，其中：第一接合部包括球接合。
22.根据权利要求13所述的电连接件，其中：第二接合部包括缝接合。
23.根据权利要求13所述的电连接件，其中：第二装置包括载体。
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