TW200308079A - Semiconductor device and semiconductor memory using the same - Google Patents

Semiconductor device and semiconductor memory using the same Download PDF

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Publication number
TW200308079A
TW200308079A TW092104783A TW92104783A TW200308079A TW 200308079 A TW200308079 A TW 200308079A TW 092104783 A TW092104783 A TW 092104783A TW 92104783 A TW92104783 A TW 92104783A TW 200308079 A TW200308079 A TW 200308079A
Authority
TW
Taiwan
Prior art keywords
transistor
source
layer
region
semiconductor memory
Prior art date
Application number
TW092104783A
Other languages
English (en)
Chinese (zh)
Inventor
Takashi Miida
Original Assignee
Innotech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Innotech Corp filed Critical Innotech Corp
Publication of TW200308079A publication Critical patent/TW200308079A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H10B41/35—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region with a cell select transistor, e.g. NAND
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/687—Floating-gate IGFETs having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional [3D] arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels

Landscapes

  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW092104783A 2002-03-27 2003-03-06 Semiconductor device and semiconductor memory using the same TW200308079A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002089744 2002-03-27
JP2003036005A JP4472934B2 (ja) 2002-03-27 2003-02-14 半導体装置および半導体メモリ

Publications (1)

Publication Number Publication Date
TW200308079A true TW200308079A (en) 2003-12-16

Family

ID=27807028

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092104783A TW200308079A (en) 2002-03-27 2003-03-06 Semiconductor device and semiconductor memory using the same

Country Status (6)

Country Link
US (2) US6984863B2 (https=)
EP (1) EP1349215A2 (https=)
JP (1) JP4472934B2 (https=)
KR (1) KR20030078023A (https=)
CN (1) CN1447436A (https=)
TW (1) TW200308079A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI923193B (zh) 2024-08-23 2026-04-21 台灣積體電路製造股份有限公司 記憶體裝置及其形成方法

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JP2004214495A (ja) * 2003-01-07 2004-07-29 Innotech Corp トランジスタとそれを用いた半導体メモリ、および半導体メモリの製造方法
US6914825B2 (en) * 2003-04-03 2005-07-05 Ememory Technology Inc. Semiconductor memory device having improved data retention
US6936883B2 (en) * 2003-04-07 2005-08-30 Silicon Storage Technology, Inc. Bi-directional read/program non-volatile floating gate memory cell and array thereof, and method of formation
US6967143B2 (en) * 2003-04-30 2005-11-22 Freescale Semiconductor, Inc. Semiconductor fabrication process with asymmetrical conductive spacers
US7192876B2 (en) * 2003-05-22 2007-03-20 Freescale Semiconductor, Inc. Transistor with independent gate structures
JP4532405B2 (ja) * 2003-06-04 2010-08-25 富士通セミコンダクター株式会社 不揮発性半導体メモリ
US7202523B2 (en) * 2003-11-17 2007-04-10 Micron Technology, Inc. NROM flash memory devices on ultrathin silicon
KR100618819B1 (ko) * 2004-02-06 2006-08-31 삼성전자주식회사 오버레이 마진이 개선된 반도체 소자 및 그 제조방법
JP4557678B2 (ja) * 2004-02-13 2010-10-06 イノテック株式会社 半導体記憶装置
US7087950B2 (en) * 2004-04-30 2006-08-08 Infineon Technologies Ag Flash memory cell, flash memory device and manufacturing method thereof
EP1837917A1 (en) * 2006-03-21 2007-09-26 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP5164404B2 (ja) * 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
JP5164406B2 (ja) * 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
KR101488516B1 (ko) * 2006-03-21 2015-02-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 불휘발성 반도체 기억장치
TWI416738B (zh) 2006-03-21 2013-11-21 Semiconductor Energy Lab 非揮發性半導體記憶體裝置
JP2007288175A (ja) * 2006-03-21 2007-11-01 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置
JP5164405B2 (ja) * 2006-03-21 2013-03-21 株式会社半導体エネルギー研究所 不揮発性半導体記憶装置
JP5466815B2 (ja) * 2006-03-31 2014-04-09 株式会社半導体エネルギー研究所 半導体装置
EP1840947A3 (en) 2006-03-31 2008-08-13 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile semiconductor memory device
JP2007294911A (ja) * 2006-03-31 2007-11-08 Semiconductor Energy Lab Co Ltd 不揮発性半導体記憶装置
JP5483659B2 (ja) * 2006-03-31 2014-05-07 株式会社半導体エネルギー研究所 半導体装置
US7755132B2 (en) 2006-08-16 2010-07-13 Sandisk Corporation Nonvolatile memories with shaped floating gates
US7494860B2 (en) * 2006-08-16 2009-02-24 Sandisk Corporation Methods of forming nonvolatile memories with L-shaped floating gates
JP5270205B2 (ja) 2008-03-24 2013-08-21 株式会社Ｄｎｐファインケミカル インクジェット記録用油性緑色インク組成物およびインクジェット記録用油性インクセット
KR101096907B1 (ko) * 2009-10-05 2011-12-22 주식회사 하이닉스반도체 반도체 소자 및 그 형성방법

Family Cites Families (9)

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US5379255A (en) 1992-12-14 1995-01-03 Texas Instruments Incorporated Three dimensional famos memory devices and methods of fabricating
JP4397491B2 (ja) 1999-11-30 2010-01-13 財団法人国際科学振興財団 １１１面方位を表面に有するシリコンを用いた半導体装置およびその形成方法
JP3283872B1 (ja) 2001-04-12 2002-05-20 イノテック株式会社 半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法
JP3249811B1 (ja) 2000-11-09 2002-01-21 イノテック株式会社 半導体記憶装置、その製造方法及び半導体記憶装置の駆動方法
JP3249812B1 (ja) 2001-05-14 2002-01-21 イノテック株式会社 半導体記憶装置及びその製造方法
JP4191975B2 (ja) 2001-11-01 2008-12-03 イノテック株式会社 トランジスタとそれを用いた半導体メモリ、およびトランジスタの製造方法
JP2003224215A (ja) 2001-11-22 2003-08-08 Innotech Corp トランジスタとそれを用いた半導体メモリ、およびトランジスタの駆動方法
JP2004072060A (ja) * 2001-11-22 2004-03-04 Innotech Corp トランジスタとそれを用いた半導体メモリ、およびトランジスタの駆動方法
US6861315B1 (en) 2003-08-14 2005-03-01 Silicon Storage Technology, Inc. Method of manufacturing an array of bi-directional nonvolatile memory cells

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI923193B (zh) 2024-08-23 2026-04-21 台灣積體電路製造股份有限公司 記憶體裝置及其形成方法

Also Published As

Publication number Publication date
US20060027857A1 (en) 2006-02-09
CN1447436A (zh) 2003-10-08
JP2004006658A (ja) 2004-01-08
US20030183872A1 (en) 2003-10-02
KR20030078023A (ko) 2003-10-04
US6984863B2 (en) 2006-01-10
US7221029B2 (en) 2007-05-22
EP1349215A2 (en) 2003-10-01
JP4472934B2 (ja) 2010-06-02

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