TW200303572A - Electron beam exposure apparatus - Google Patents

Electron beam exposure apparatus Download PDF

Info

Publication number
TW200303572A
TW200303572A TW091132771A TW91132771A TW200303572A TW 200303572 A TW200303572 A TW 200303572A TW 091132771 A TW091132771 A TW 091132771A TW 91132771 A TW91132771 A TW 91132771A TW 200303572 A TW200303572 A TW 200303572A
Authority
TW
Taiwan
Prior art keywords
wafer
mounting table
tray
mounting
mask
Prior art date
Application number
TW091132771A
Other languages
English (en)
Chinese (zh)
Inventor
Nobuo Shimazu
Akihiro Endou
Tohru Ise
Toyoji Fukui
Taichi Fujita
Yanagi Yoshiaki
Tsuda Yukio
Tsuda Hideaki
Nihei Koichi
Original Assignee
Tokyo Seimitsu Co Ltd
Leepl Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co Ltd, Leepl Corp filed Critical Tokyo Seimitsu Co Ltd
Publication of TW200303572A publication Critical patent/TW200303572A/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00Manufacture or treatment of nanostructures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electron Beam Exposure (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
TW091132771A 2001-11-07 2002-11-07 Electron beam exposure apparatus TW200303572A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001342229A JP2003142392A (ja) 2001-11-07 2001-11-07 電子ビーム露光装置

Publications (1)

Publication Number Publication Date
TW200303572A true TW200303572A (en) 2003-09-01

Family

ID=19156119

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091132771A TW200303572A (en) 2001-11-07 2002-11-07 Electron beam exposure apparatus

Country Status (3)

Country Link
JP (1) JP2003142392A (ja)
TW (1) TW200303572A (ja)
WO (1) WO2003041136A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104335290A (zh) * 2012-05-21 2015-02-04 株式会社爱瑞思 电子线照射装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4522139B2 (ja) * 2003-09-19 2010-08-11 大日本スクリーン製造株式会社 基板処理ユニット、基板載置状態検出方法および基板処理装置
JP2006303156A (ja) * 2005-04-20 2006-11-02 Nikon Corp 静電チャック装置および露光装置
JP2010272586A (ja) * 2009-05-19 2010-12-02 Hitachi High-Technologies Corp 荷電粒子線装置
CN101916038B (zh) * 2010-07-15 2012-01-25 中国科学院苏州纳米技术与纳米仿生研究所 一种电子束光刻加工圆形阵列的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148224A (ja) * 1995-11-24 1997-06-06 Matsushita Electric Ind Co Ltd 露光装置及びパターン形成方法
JPH09266157A (ja) * 1996-03-28 1997-10-07 Nec Corp 縮小投影露光方法およびその装置
JP3123956B2 (ja) * 1997-10-03 2001-01-15 株式会社日立製作所 静電吸着装置及びそれを用いた電子線描画装置
US5831272A (en) * 1997-10-21 1998-11-03 Utsumi; Takao Low energy electron beam lithography
GB2339960B (en) * 1998-07-16 2001-01-17 Advantest Corp Charged particle beam exposure apparatus and exposure method capable of highly accurate exposure in the presence of partial surface unevenness of the specimen

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104335290A (zh) * 2012-05-21 2015-02-04 株式会社爱瑞思 电子线照射装置
CN104335290B (zh) * 2012-05-21 2018-10-16 株式会社爱瑞思 电子线照射装置

Also Published As

Publication number Publication date
WO2003041136A1 (fr) 2003-05-15
JP2003142392A (ja) 2003-05-16

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