WO2003041136A1 - Dispositif d'exposition a faisceau d'electrons - Google Patents
Dispositif d'exposition a faisceau d'electrons Download PDFInfo
- Publication number
- WO2003041136A1 WO2003041136A1 PCT/JP2002/011623 JP0211623W WO03041136A1 WO 2003041136 A1 WO2003041136 A1 WO 2003041136A1 JP 0211623 W JP0211623 W JP 0211623W WO 03041136 A1 WO03041136 A1 WO 03041136A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electron beam
- exposure device
- beam exposure
- placing surfaces
- reference placing
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electron Beam Exposure (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001342229A JP2003142392A (ja) | 2001-11-07 | 2001-11-07 | 電子ビーム露光装置 |
JP2001/342229 | 2001-11-07 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003041136A1 true WO2003041136A1 (fr) | 2003-05-15 |
Family
ID=19156119
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2002/011623 WO2003041136A1 (fr) | 2001-11-07 | 2002-11-07 | Dispositif d'exposition a faisceau d'electrons |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2003142392A (ja) |
TW (1) | TW200303572A (ja) |
WO (1) | WO2003041136A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9180216B2 (en) | 2012-05-21 | 2015-11-10 | Airex Co., Ltd. | Electron beam irradiation device with gripping/moving means |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4522139B2 (ja) * | 2003-09-19 | 2010-08-11 | 大日本スクリーン製造株式会社 | 基板処理ユニット、基板載置状態検出方法および基板処理装置 |
JP2006303156A (ja) * | 2005-04-20 | 2006-11-02 | Nikon Corp | 静電チャック装置および露光装置 |
JP2010272586A (ja) * | 2009-05-19 | 2010-12-02 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
CN101916038B (zh) * | 2010-07-15 | 2012-01-25 | 中国科学院苏州纳米技术与纳米仿生研究所 | 一种电子束光刻加工圆形阵列的方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09148224A (ja) * | 1995-11-24 | 1997-06-06 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
JPH09266157A (ja) * | 1996-03-28 | 1997-10-07 | Nec Corp | 縮小投影露光方法およびその装置 |
US5831272A (en) * | 1997-10-21 | 1998-11-03 | Utsumi; Takao | Low energy electron beam lithography |
JPH11111599A (ja) * | 1997-10-03 | 1999-04-23 | Hitachi Ltd | 静電吸着装置及びそれを用いた電子線描画装置 |
GB2339960A (en) * | 1998-07-16 | 2000-02-09 | Advantest Corp | Charged particle beam exposure with compensation for partial unevenness of the surface of the exposed specimen |
-
2001
- 2001-11-07 JP JP2001342229A patent/JP2003142392A/ja active Pending
-
2002
- 2002-11-07 WO PCT/JP2002/011623 patent/WO2003041136A1/ja active Search and Examination
- 2002-11-07 TW TW091132771A patent/TW200303572A/zh unknown
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09148224A (ja) * | 1995-11-24 | 1997-06-06 | Matsushita Electric Ind Co Ltd | 露光装置及びパターン形成方法 |
JPH09266157A (ja) * | 1996-03-28 | 1997-10-07 | Nec Corp | 縮小投影露光方法およびその装置 |
JPH11111599A (ja) * | 1997-10-03 | 1999-04-23 | Hitachi Ltd | 静電吸着装置及びそれを用いた電子線描画装置 |
US5831272A (en) * | 1997-10-21 | 1998-11-03 | Utsumi; Takao | Low energy electron beam lithography |
GB2339960A (en) * | 1998-07-16 | 2000-02-09 | Advantest Corp | Charged particle beam exposure with compensation for partial unevenness of the surface of the exposed specimen |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9180216B2 (en) | 2012-05-21 | 2015-11-10 | Airex Co., Ltd. | Electron beam irradiation device with gripping/moving means |
Also Published As
Publication number | Publication date |
---|---|
JP2003142392A (ja) | 2003-05-16 |
TW200303572A (en) | 2003-09-01 |
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