GB2339960B - Charged particle beam exposure apparatus and exposure method capable of highly accurate exposure in the presence of partial surface unevenness of the specimen - Google Patents
Charged particle beam exposure apparatus and exposure method capable of highly accurate exposure in the presence of partial surface unevenness of the specimenInfo
- Publication number
- GB2339960B GB2339960B GB9916395A GB9916395A GB2339960B GB 2339960 B GB2339960 B GB 2339960B GB 9916395 A GB9916395 A GB 9916395A GB 9916395 A GB9916395 A GB 9916395A GB 2339960 B GB2339960 B GB 2339960B
- Authority
- GB
- United Kingdom
- Prior art keywords
- exposure
- specimen
- charged particle
- particle beam
- method capable
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/302—Controlling tubes by external information, e.g. programme control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/304—Controlling tubes
- H01J2237/30455—Correction during exposure
- H01J2237/30461—Correction during exposure pre-calculated
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Electron Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20179898 | 1998-07-16 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9916395D0 GB9916395D0 (en) | 1999-09-15 |
GB2339960A GB2339960A (en) | 2000-02-09 |
GB2339960B true GB2339960B (en) | 2001-01-17 |
Family
ID=16447116
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9916395A Expired - Fee Related GB2339960B (en) | 1998-07-16 | 1999-07-13 | Charged particle beam exposure apparatus and exposure method capable of highly accurate exposure in the presence of partial surface unevenness of the specimen |
Country Status (4)
Country | Link |
---|---|
KR (1) | KR100334636B1 (en) |
DE (1) | DE19934076A1 (en) |
GB (1) | GB2339960B (en) |
TW (1) | TW414960B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10147133A1 (en) * | 2000-10-03 | 2002-06-13 | Advantest Corp | Electron beam exposure apparatus |
KR100471057B1 (en) | 2001-07-10 | 2005-03-08 | 삼성전자주식회사 | portable computer and method for reproducing video signal on screen thereof |
JP2003142392A (en) * | 2001-11-07 | 2003-05-16 | Tokyo Seimitsu Co Ltd | Electron beam exposure system |
US6946655B2 (en) * | 2001-11-07 | 2005-09-20 | Applied Materials, Inc. | Spot grid array electron imaging system |
DE10239858B4 (en) | 2002-08-29 | 2005-08-11 | Infineon Technologies Ag | Method and device for compensating for unevenness in the surface of a substrate |
GB2412232A (en) | 2004-03-15 | 2005-09-21 | Ims Nanofabrication Gmbh | Particle-optical projection system |
JP2022144237A (en) * | 2021-03-18 | 2022-10-03 | キオクシア株式会社 | Drawing method, original plate manufacturing method, and drawing apparatus |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6079722A (en) * | 1983-10-06 | 1985-05-07 | Jeol Ltd | Electron beam exposing method |
US4678919A (en) * | 1983-01-31 | 1987-07-07 | Fujitsu Limited | Electron beam exposure method and apparatus |
US5166529A (en) * | 1990-12-01 | 1992-11-24 | Hitachi, Ltd. | Electron beam lithography system |
US5757015A (en) * | 1995-06-08 | 1998-05-26 | Fujitsu Limited | Charged-particle-beam exposure device and charged-particle-beam exposure method |
-
1999
- 1999-07-13 KR KR1019990028182A patent/KR100334636B1/en not_active IP Right Cessation
- 1999-07-13 GB GB9916395A patent/GB2339960B/en not_active Expired - Fee Related
- 1999-07-14 TW TW088111939A patent/TW414960B/en not_active IP Right Cessation
- 1999-07-15 DE DE19934076A patent/DE19934076A1/en not_active Withdrawn
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4678919A (en) * | 1983-01-31 | 1987-07-07 | Fujitsu Limited | Electron beam exposure method and apparatus |
JPS6079722A (en) * | 1983-10-06 | 1985-05-07 | Jeol Ltd | Electron beam exposing method |
US5166529A (en) * | 1990-12-01 | 1992-11-24 | Hitachi, Ltd. | Electron beam lithography system |
US5757015A (en) * | 1995-06-08 | 1998-05-26 | Fujitsu Limited | Charged-particle-beam exposure device and charged-particle-beam exposure method |
Non-Patent Citations (1)
Title |
---|
Patent Abstracts of Japan, vol 9, no 220 [E-341] & JP 60 079 722 A * |
Also Published As
Publication number | Publication date |
---|---|
GB9916395D0 (en) | 1999-09-15 |
KR100334636B1 (en) | 2002-04-27 |
DE19934076A1 (en) | 2000-03-30 |
GB2339960A (en) | 2000-02-09 |
TW414960B (en) | 2000-12-11 |
KR20000011676A (en) | 2000-02-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20070713 |