SG91920A1 - Multiple frequency plasma chamber with grounding capacitor at cathode - Google Patents
Multiple frequency plasma chamber with grounding capacitor at cathodeInfo
- Publication number
- SG91920A1 SG91920A1 SG200102628A SG200102628A SG91920A1 SG 91920 A1 SG91920 A1 SG 91920A1 SG 200102628 A SG200102628 A SG 200102628A SG 200102628 A SG200102628 A SG 200102628A SG 91920 A1 SG91920 A1 SG 91920A1
- Authority
- SG
- Singapore
- Prior art keywords
- cathode
- plasma chamber
- multiple frequency
- frequency plasma
- grounding capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/563,963 US6857387B1 (en) | 2000-05-03 | 2000-05-03 | Multiple frequency plasma chamber with grounding capacitor at cathode |
Publications (1)
Publication Number | Publication Date |
---|---|
SG91920A1 true SG91920A1 (en) | 2002-10-15 |
Family
ID=24252614
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200102628A SG91920A1 (en) | 2000-05-03 | 2001-05-03 | Multiple frequency plasma chamber with grounding capacitor at cathode |
Country Status (5)
Country | Link |
---|---|
US (1) | US6857387B1 (ja) |
JP (2) | JP4817528B2 (ja) |
KR (5) | KR20010102930A (ja) |
SG (1) | SG91920A1 (ja) |
TW (1) | TWI241649B (ja) |
Families Citing this family (62)
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US6477980B1 (en) * | 2000-01-20 | 2002-11-12 | Applied Materials, Inc. | Flexibly suspended gas distribution manifold for plasma chamber |
US6772827B2 (en) * | 2000-01-20 | 2004-08-10 | Applied Materials, Inc. | Suspended gas distribution manifold for plasma chamber |
JP4557400B2 (ja) * | 2000-09-14 | 2010-10-06 | キヤノン株式会社 | 堆積膜形成方法 |
US7316761B2 (en) * | 2003-02-03 | 2008-01-08 | Applied Materials, Inc. | Apparatus for uniformly etching a dielectric layer |
KR100490049B1 (ko) * | 2003-04-14 | 2005-05-17 | 삼성전자주식회사 | 일체형 디퓨저 프레임을 가지는 cvd 장치 |
KR100965758B1 (ko) * | 2003-05-22 | 2010-06-24 | 주성엔지니어링(주) | 액정표시장치용 플라즈마 강화 화학기상증착 장치의샤워헤드 어셈블리 |
US7083702B2 (en) * | 2003-06-12 | 2006-08-01 | Applied Materials, Inc. | RF current return path for a large area substrate plasma reactor |
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JP4550507B2 (ja) * | 2004-07-26 | 2010-09-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
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KR100714882B1 (ko) | 2006-02-01 | 2007-05-04 | 주식회사 에스에프에이 | 평면디스플레이용 화학 기상 증착장치 |
KR101197020B1 (ko) * | 2006-06-09 | 2012-11-06 | 주성엔지니어링(주) | 균일한 플라즈마 방전을 위한 기판처리장치 및 이를이용하여 플라즈마 방전세기를 조절하는 방법 |
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KR101641130B1 (ko) * | 2008-10-09 | 2016-07-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 대형 플라즈마 처리 챔버를 위한 rf 복귀 경로 |
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TWI432100B (zh) * | 2009-11-25 | 2014-03-21 | Ind Tech Res Inst | 電漿產生裝置 |
JP5375763B2 (ja) * | 2010-07-27 | 2013-12-25 | 三菱電機株式会社 | プラズマ装置およびこれを用いた半導体薄膜の製造方法 |
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KR101886740B1 (ko) * | 2011-11-01 | 2018-09-11 | 삼성디스플레이 주식회사 | 기상 증착 장치 및 유기 발광 표시 장치 제조 방법 |
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CN104746048A (zh) * | 2013-12-31 | 2015-07-01 | 丽佳达普株式会社 | 原子层沉积装置 |
CN104746047A (zh) * | 2013-12-31 | 2015-07-01 | 丽佳达普株式会社 | 原子层沉积装置 |
KR200482926Y1 (ko) | 2015-10-02 | 2017-03-16 | (주)씨에스텍 | 뒤틀림 현상을 감소시킨 유기금속 화학증착프로세싱 챔버용 오메가형 히터 |
US9741584B1 (en) * | 2016-05-05 | 2017-08-22 | Lam Research Corporation | Densification of dielectric film using inductively coupled high density plasma |
CN109196619B (zh) * | 2016-06-03 | 2021-10-26 | 瑞士艾发科技 | 等离子体蚀刻室和等离子体蚀刻的方法 |
KR20190091926A (ko) | 2018-01-30 | 2019-08-07 | 에이피시스템 주식회사 | 플라즈마 처리 장치 및 플라즈마 처리 방법 |
JP7446335B2 (ja) * | 2019-04-29 | 2024-03-08 | アプライド マテリアルズ インコーポレイテッド | 接地用ストラップアセンブリ |
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US6024044A (en) * | 1997-10-09 | 2000-02-15 | Applied Komatsu Technology, Inc. | Dual frequency excitation of plasma for film deposition |
JP3710081B2 (ja) * | 1997-11-30 | 2005-10-26 | アルプス電気株式会社 | プラズマ処理装置 |
US6098568A (en) * | 1997-12-01 | 2000-08-08 | Applied Materials, Inc. | Mixed frequency CVD apparatus |
JP3565311B2 (ja) * | 1997-12-17 | 2004-09-15 | アルプス電気株式会社 | プラズマ処理装置 |
US6112697A (en) | 1998-02-19 | 2000-09-05 | Micron Technology, Inc. | RF powered plasma enhanced chemical vapor deposition reactor and methods |
KR100292411B1 (ko) * | 1998-09-25 | 2001-06-01 | 윤종용 | 반도체소자의 제조에 사용되는 플라즈마 장비 |
-
2000
- 2000-05-03 US US09/563,963 patent/US6857387B1/en not_active Expired - Fee Related
-
2001
- 2001-05-02 TW TW090110556A patent/TWI241649B/zh not_active IP Right Cessation
- 2001-05-03 SG SG200102628A patent/SG91920A1/en unknown
- 2001-05-03 KR KR1020010024071A patent/KR20010102930A/ko not_active Application Discontinuation
- 2001-05-07 JP JP2001136357A patent/JP4817528B2/ja not_active Expired - Lifetime
-
2006
- 2006-11-17 KR KR1020060113939A patent/KR20060123696A/ko not_active IP Right Cessation
-
2007
- 2007-11-30 KR KR1020070123727A patent/KR20070118998A/ko not_active Application Discontinuation
-
2009
- 2009-07-03 KR KR1020090060654A patent/KR100971840B1/ko active IP Right Grant
-
2010
- 2010-03-02 KR KR1020100018516A patent/KR101012407B1/ko active IP Right Grant
-
2011
- 2011-07-19 JP JP2011157868A patent/JP5600644B2/ja not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0845800A1 (en) * | 1996-11-27 | 1998-06-03 | Hitachi, Ltd. | Plasma processing apparatus |
WO1999028524A1 (en) * | 1997-12-01 | 1999-06-10 | Applied Materials, Inc. | Use of an asymmetric waveform to control ion bombardment during substrate processing |
Also Published As
Publication number | Publication date |
---|---|
JP2011253821A (ja) | 2011-12-15 |
JP5600644B2 (ja) | 2014-10-01 |
KR20090080494A (ko) | 2009-07-24 |
KR20100039833A (ko) | 2010-04-16 |
JP2002151496A (ja) | 2002-05-24 |
KR101012407B1 (ko) | 2011-02-09 |
TWI241649B (en) | 2005-10-11 |
JP4817528B2 (ja) | 2011-11-16 |
KR20060123696A (ko) | 2006-12-04 |
KR20010102930A (ko) | 2001-11-17 |
KR100971840B1 (ko) | 2010-07-22 |
KR20070118998A (ko) | 2007-12-18 |
US6857387B1 (en) | 2005-02-22 |
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