AU2001289211A1 - Capacitively coupled plasma reactor - Google Patents

Capacitively coupled plasma reactor

Info

Publication number
AU2001289211A1
AU2001289211A1 AU2001289211A AU8921101A AU2001289211A1 AU 2001289211 A1 AU2001289211 A1 AU 2001289211A1 AU 2001289211 A AU2001289211 A AU 2001289211A AU 8921101 A AU8921101 A AU 8921101A AU 2001289211 A1 AU2001289211 A1 AU 2001289211A1
Authority
AU
Australia
Prior art keywords
coupled plasma
capacitively coupled
plasma reactor
reactor
capacitively
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001289211A
Inventor
Bill H. Quon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of AU2001289211A1 publication Critical patent/AU2001289211A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32568—Relative arrangement or disposition of electrodes; moving means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
AU2001289211A 2000-09-12 2001-09-12 Capacitively coupled plasma reactor Abandoned AU2001289211A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23187800P 2000-09-12 2000-09-12
US60/231,878 2000-09-12
PCT/US2001/042111 WO2002023588A2 (en) 2000-09-12 2001-09-12 Capacitively coupled plasma reactor

Publications (1)

Publication Number Publication Date
AU2001289211A1 true AU2001289211A1 (en) 2002-03-26

Family

ID=22870971

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001289211A Abandoned AU2001289211A1 (en) 2000-09-12 2001-09-12 Capacitively coupled plasma reactor

Country Status (4)

Country Link
US (1) US20030150562A1 (en)
AU (1) AU2001289211A1 (en)
TW (1) TW511398B (en)
WO (1) WO2002023588A2 (en)

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WO2003005406A1 (en) * 2001-07-03 2003-01-16 Tokyo Electron Limited Plasma pump with inter-stage plasma source
KR100585089B1 (en) * 2003-05-27 2006-05-30 삼성전자주식회사 Plasma processing apparatus for processing the edge of wafer, insulating plate for plasma processing, bottom electrode for plasma processing, method of plasma processing the edge of wafer and method of fabricating semiconductor device using the same
US7400096B1 (en) 2004-07-19 2008-07-15 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Large area plasma source
US7305935B1 (en) 2004-08-25 2007-12-11 The United States Of America As Represented By The Administration Of Nasa Slotted antenna waveguide plasma source
US7323116B2 (en) * 2004-09-27 2008-01-29 Lam Research Corporation Methods and apparatus for monitoring a process in a plasma processing system by measuring self-bias voltage
US7780814B2 (en) * 2005-07-08 2010-08-24 Applied Materials, Inc. Wafer pre-clean reactor cable termination for selective suppression/reflection of source and bias frequency cross products
US20080194091A1 (en) * 2007-02-13 2008-08-14 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating nitrided oxide layer
US9287096B2 (en) 2007-09-27 2016-03-15 Lam Research Corporation Methods and apparatus for a hybrid capacitively-coupled and an inductively-coupled plasma processing system
US20090236214A1 (en) 2008-03-20 2009-09-24 Karthik Janakiraman Tunable ground planes in plasma chambers
US9887069B2 (en) 2008-12-19 2018-02-06 Lam Research Corporation Controlling ion energy distribution in plasma processing systems
CN101857953B (en) 2010-06-11 2012-04-18 深圳市创益科技发展有限公司 Face feed electrode for thin-film solar cell deposition
CN101859801B (en) 2010-06-11 2013-02-20 深圳市创益科技发展有限公司 Discharge electrode plate array for thin film solar cell settling
CN101882647B (en) 2010-06-11 2012-01-25 深圳市创益科技发展有限公司 Movable holder for silicon-based film solar cells
CN101880868B (en) 2010-06-11 2012-03-07 深圳市创益科技发展有限公司 Deposition box for silicon-based film solar cells
CN101882646B (en) 2010-06-11 2012-01-25 深圳市创益科技发展有限公司 Deposition clamp of film solar cell
CN102185217B (en) * 2011-03-04 2013-02-06 深圳市创益科技发展有限公司 Connecting member and method for radio-frequency power supply in silicon-based film battery deposition clamp
US20120258555A1 (en) * 2011-04-11 2012-10-11 Lam Research Corporation Multi-Frequency Hollow Cathode and Systems Implementing the Same
US8900403B2 (en) 2011-05-10 2014-12-02 Lam Research Corporation Semiconductor processing system having multiple decoupled plasma sources
JP6018757B2 (en) 2012-01-18 2016-11-02 東京エレクトロン株式会社 Substrate processing equipment
US9209032B2 (en) 2013-03-15 2015-12-08 Tokyo Electron Limited Electric pressure systems for control of plasma properties and uniformity
EP2819049B1 (en) * 2013-06-27 2015-11-18 Nxp B.V. Device with capacitive security shield
US10790121B2 (en) 2017-04-07 2020-09-29 Applied Materials, Inc. Plasma density control on substrate edge
WO2020014448A1 (en) * 2018-07-11 2020-01-16 Board Of Trustees Of Michigan State University Vertically oriented plasma reactor
US11545343B2 (en) 2019-04-22 2023-01-03 Board Of Trustees Of Michigan State University Rotary plasma reactor

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
JPS5687672A (en) * 1979-12-15 1981-07-16 Anelva Corp Dry etching apparatus
US4691662A (en) * 1983-02-28 1987-09-08 Michigan State University Dual plasma microwave apparatus and method for treating a surface
US4885074A (en) * 1987-02-24 1989-12-05 International Business Machines Corporation Plasma reactor having segmented electrodes
US5707486A (en) * 1990-07-31 1998-01-13 Applied Materials, Inc. Plasma reactor using UHF/VHF and RF triode source, and process
US5444207A (en) * 1992-03-26 1995-08-22 Kabushiki Kaisha Toshiba Plasma generating device and surface processing device and method for processing wafers in a uniform magnetic field
US5286297A (en) * 1992-06-24 1994-02-15 Texas Instruments Incorporated Multi-electrode plasma processing apparatus
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5292370A (en) * 1992-08-14 1994-03-08 Martin Marietta Energy Systems, Inc. Coupled microwave ECR and radio-frequency plasma source for plasma processing
KR100302167B1 (en) * 1993-11-05 2001-11-22 히가시 데쓰로 Plasma Treatment Equipment and Plasma Treatment Methods
US6375860B1 (en) * 1995-03-10 2002-04-23 General Atomics Controlled potential plasma source
US5656123A (en) * 1995-06-07 1997-08-12 Varian Associates, Inc. Dual-frequency capacitively-coupled plasma reactor for materials processing
US6214162B1 (en) * 1996-09-27 2001-04-10 Tokyo Electron Limited Plasma processing apparatus
TW418461B (en) * 1997-03-07 2001-01-11 Tokyo Electron Ltd Plasma etching device
JP3598717B2 (en) * 1997-03-19 2004-12-08 株式会社日立製作所 Plasma processing equipment
US6184489B1 (en) * 1998-04-13 2001-02-06 Nec Corporation Particle-removing apparatus for a semiconductor device manufacturing apparatus and method of removing particles
TW516113B (en) * 1999-04-14 2003-01-01 Hitachi Ltd Plasma processing device and plasma processing method

Also Published As

Publication number Publication date
US20030150562A1 (en) 2003-08-14
WO2002023588A3 (en) 2002-09-12
WO2002023588A2 (en) 2002-03-21
TW511398B (en) 2002-11-21

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