AU2001296323A1 - Chamber configuration for confining a plasma - Google Patents

Chamber configuration for confining a plasma

Info

Publication number
AU2001296323A1
AU2001296323A1 AU2001296323A AU9632301A AU2001296323A1 AU 2001296323 A1 AU2001296323 A1 AU 2001296323A1 AU 2001296323 A AU2001296323 A AU 2001296323A AU 9632301 A AU9632301 A AU 9632301A AU 2001296323 A1 AU2001296323 A1 AU 2001296323A1
Authority
AU
Australia
Prior art keywords
confining
plasma
chamber configuration
chamber
configuration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296323A
Inventor
Jian J. Chen
Eric H. Lenz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU2001296323A1 publication Critical patent/AU2001296323A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32871—Means for trapping or directing unwanted particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • ing And Chemical Polishing (AREA)
  • Lasers (AREA)
AU2001296323A 2000-09-28 2001-09-25 Chamber configuration for confining a plasma Abandoned AU2001296323A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/676,269 US6872281B1 (en) 2000-09-28 2000-09-28 Chamber configuration for confining a plasma
US09/676,269 2000-09-28
PCT/US2001/030098 WO2002027755A2 (en) 2000-09-28 2001-09-25 Chamber configuration for confining a plasma

Publications (1)

Publication Number Publication Date
AU2001296323A1 true AU2001296323A1 (en) 2002-04-08

Family

ID=24713853

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296323A Abandoned AU2001296323A1 (en) 2000-09-28 2001-09-25 Chamber configuration for confining a plasma

Country Status (6)

Country Link
US (2) US6872281B1 (en)
JP (1) JP4928055B2 (en)
KR (1) KR100839392B1 (en)
CN (1) CN100416744C (en)
AU (1) AU2001296323A1 (en)
WO (1) WO2002027755A2 (en)

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US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
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US7722778B2 (en) * 2006-06-28 2010-05-25 Lam Research Corporation Methods and apparatus for sensing unconfinement in a plasma processing chamber
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US7854820B2 (en) * 2006-10-16 2010-12-21 Lam Research Corporation Upper electrode backing member with particle reducing features
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JP5154124B2 (en) * 2007-03-29 2013-02-27 東京エレクトロン株式会社 Plasma processing equipment
US8450635B2 (en) * 2007-03-30 2013-05-28 Lam Research Corporation Method and apparatus for inducing DC voltage on wafer-facing electrode
US8216418B2 (en) * 2007-06-13 2012-07-10 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket and o-rings
US8187414B2 (en) 2007-10-12 2012-05-29 Lam Research Corporation Anchoring inserts, electrode assemblies, and plasma processing chambers
US8152954B2 (en) 2007-10-12 2012-04-10 Lam Research Corporation Showerhead electrode assemblies and plasma processing chambers incorporating the same
US7736914B2 (en) * 2007-11-29 2010-06-15 Applied Materials, Inc. Plasma control using dual cathode frequency mixing and controlling the level of polymer formation
US8522715B2 (en) * 2008-01-08 2013-09-03 Lam Research Corporation Methods and apparatus for a wide conductance kit
TWI516175B (en) * 2008-02-08 2016-01-01 蘭姆研究公司 A method to stabilize pressure in a plasma processing chamber, and a program storage medium of same
US8187413B2 (en) * 2008-03-18 2012-05-29 Lam Research Corporation Electrode assembly and plasma processing chamber utilizing thermally conductive gasket
US8287650B2 (en) * 2008-09-10 2012-10-16 Applied Materials, Inc. Low sloped edge ring for plasma processing chamber
CN102187741B (en) * 2008-10-31 2014-08-06 朗姆研究公司 Lower electrode assembly of plasma processing chamber
KR101063588B1 (en) * 2008-11-05 2011-09-07 주식회사 디엠에스 Electrostatic chuck assembly with structure to extend the life of cover ring and improve the etching performance of plasma reactor
US8540844B2 (en) * 2008-12-19 2013-09-24 Lam Research Corporation Plasma confinement structures in plasma processing systems
US8869741B2 (en) * 2008-12-19 2014-10-28 Lam Research Corporation Methods and apparatus for dual confinement and ultra-high pressure in an adjustable gap plasma chamber
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US8313612B2 (en) * 2009-03-24 2012-11-20 Lam Research Corporation Method and apparatus for reduction of voltage potential spike during dechucking
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KR101082134B1 (en) * 2010-03-16 2011-11-09 삼성모바일디스플레이주식회사 Method for manufacturing a touch screen panel using the dry etching apparatus
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US10854492B2 (en) * 2015-08-18 2020-12-01 Lam Research Corporation Edge ring assembly for improving feature profile tilting at extreme edge of wafer
CN106611691B (en) * 2015-10-26 2018-10-12 中微半导体设备(上海)有限公司 Multifrequency pulse plasma processing apparatus and its processing method and cleaning method
CN109423610B (en) 2017-08-24 2020-12-04 京东方科技集团股份有限公司 Evaporation device and evaporation method
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Also Published As

Publication number Publication date
JP4928055B2 (en) 2012-05-09
WO2002027755A2 (en) 2002-04-04
CN1478291A (en) 2004-02-25
US6872281B1 (en) 2005-03-29
US7094315B2 (en) 2006-08-22
CN100416744C (en) 2008-09-03
KR20030074602A (en) 2003-09-19
WO2002027755A3 (en) 2002-08-08
JP2004515910A (en) 2004-05-27
KR100839392B1 (en) 2008-06-20
US20050103442A1 (en) 2005-05-19

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