AU2001294139A1 - A single frequency laser - Google Patents

A single frequency laser

Info

Publication number
AU2001294139A1
AU2001294139A1 AU2001294139A AU9413901A AU2001294139A1 AU 2001294139 A1 AU2001294139 A1 AU 2001294139A1 AU 2001294139 A AU2001294139 A AU 2001294139A AU 9413901 A AU9413901 A AU 9413901A AU 2001294139 A1 AU2001294139 A1 AU 2001294139A1
Authority
AU
Australia
Prior art keywords
single frequency
frequency laser
laser
frequency
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001294139A
Inventor
Brian Michael Corbett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
University College Cork
Original Assignee
University College Cork
National University of Ireland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by University College Cork, National University of Ireland filed Critical University College Cork
Publication of AU2001294139A1 publication Critical patent/AU2001294139A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0202—Cleaving
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
    • H01S5/0203—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0654—Single longitudinal mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
AU2001294139A 2000-10-11 2001-10-11 A single frequency laser Abandoned AU2001294139A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
IES2000/0820 2000-10-11
IE20000820A IES20000820A2 (en) 2000-10-11 2000-10-11 A single frequency laser
PCT/IE2001/000128 WO2002031863A2 (en) 2000-10-11 2001-10-11 A single frequency laser

Publications (1)

Publication Number Publication Date
AU2001294139A1 true AU2001294139A1 (en) 2002-04-22

Family

ID=11042678

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001294139A Abandoned AU2001294139A1 (en) 2000-10-11 2001-10-11 A single frequency laser

Country Status (5)

Country Link
US (2) US7087448B2 (en)
EP (1) EP1384252B1 (en)
AU (1) AU2001294139A1 (en)
IE (1) IES20000820A2 (en)
WO (1) WO2002031863A2 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0124427D0 (en) * 2001-10-11 2001-12-05 Eblana Photonics Ltd A method of manufacturing a semiconductor device
IES20030516A2 (en) * 2003-07-11 2004-10-06 Eblana Photonics Ltd Semiconductor laser and method of manufacture
US7713574B2 (en) 2004-07-13 2010-05-11 Dexcom, Inc. Transcutaneous analyte sensor
US20080192781A1 (en) * 2004-09-03 2008-08-14 Eblana Photonics Limited Semiconductor Light Emitting Device
GB0512386D0 (en) * 2005-06-17 2005-07-27 Ct For Integrated Photonics Th Folded cavity optoelectronic devices
JP2008198650A (en) * 2007-02-08 2008-08-28 Toshiba Discrete Technology Kk Semiconductor light-emitting element and semiconductor light-emitting device
DE102014115253A1 (en) * 2014-10-20 2016-04-21 Osram Opto Semiconductors Gmbh Process for structuring a layer sequence and semiconductor laser device
ITUA20163362A1 (en) * 2016-05-11 2017-11-11 Prima Electro S P A PROCEDURE FOR THE REALIZATION OF A LASER DIODE
CN113642819A (en) * 2020-05-11 2021-11-12 上海华力集成电路制造有限公司 Automatic scheduling device and method for products in abnormal stations in interlinked allowable time zones
DE102020133177A1 (en) * 2020-12-11 2022-06-15 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LIGHT-emitting semiconductor chip and method of manufacturing a light-emitting semiconductor chip
CN112636166B (en) * 2020-12-18 2022-03-15 中国科学院半导体研究所 Tunable single longitudinal mode laser and preparation method thereof

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4608697A (en) * 1983-04-11 1986-08-26 At&T Bell Laboratories Spectral control arrangement for coupled cavity laser
JPS60165780A (en) * 1984-02-08 1985-08-28 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS60187078A (en) * 1984-03-06 1985-09-24 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS60263490A (en) * 1984-06-12 1985-12-26 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS6159792A (en) * 1984-08-30 1986-03-27 Matsushita Electric Ind Co Ltd Semiconductor laser device
JPS63305582A (en) * 1987-06-05 1988-12-13 Matsushita Electric Ind Co Ltd Semiconductor laser
JPH01215083A (en) * 1988-02-24 1989-08-29 Mitsubishi Electric Corp Method of cleaving optical element
EP0532816B1 (en) * 1991-09-19 1995-08-09 International Business Machines Corporation Self-aligned optical waveguide to laser structure and method for making the same
JPH0864906A (en) * 1994-08-24 1996-03-08 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor device
GB9425729D0 (en) * 1994-09-14 1995-02-22 British Telecomm Otical device
JP3409928B2 (en) * 1994-10-15 2003-05-26 株式会社東芝 Method for manufacturing semiconductor device
US5629233A (en) * 1996-04-04 1997-05-13 Lucent Technologies Inc. Method of making III/V semiconductor lasers
EP0977276A1 (en) * 1998-07-08 2000-02-02 Hewlett-Packard Company Semiconductor device cleave initiation
JP3605629B2 (en) * 1998-12-15 2004-12-22 富士通株式会社 Light source redundancy switching method and wavelength division multiplex transmission apparatus by the method
US6438279B1 (en) * 1999-01-07 2002-08-20 Cornell Research Foundation, Inc. Unitary microcapiliary and waveguide structure and method of fabrication

Also Published As

Publication number Publication date
US20070018200A1 (en) 2007-01-25
US7087448B2 (en) 2006-08-08
WO2002031863A2 (en) 2002-04-18
EP1384252A2 (en) 2004-01-28
EP1384252B1 (en) 2016-02-24
US20040113164A1 (en) 2004-06-17
IES20000820A2 (en) 2002-05-29
WO2002031863A3 (en) 2003-10-23

Similar Documents

Publication Publication Date Title
GB2369486A8 (en) A mode locked laser
AU2002352846A1 (en) Laser containing a slurry
AU2001245287A1 (en) Fiber-ring optical resonators
AUPQ519300A0 (en) A tissue box
EP1162706A3 (en) Q-switched frequency converted laser
AU2001294139A1 (en) A single frequency laser
AUPQ837500A0 (en) A mounting
AUPQ567900A0 (en) A wok
AU3579301A (en) A razor
AU2001242322A1 (en) A resonant converter
AU2001259095A1 (en) A nebulizer
AU2001241424A1 (en) Resonant enhanced modulator (rem)
AU2001290077A1 (en) A headset
AUPQ933300A0 (en) A cutter
AU4677501A (en) A laser diode
AUPQ680300A0 (en) A method
AU2001282463A1 (en) A turbine
AUPQ519200A0 (en) A tissue box
AU2001283459A1 (en) Solid state laser
AU2002223807A1 (en) Laser devices
AU2001241525A1 (en) Widely tunable laser
AU2001252821A1 (en) A sawweb arrangement for fungus-control
AUPR108100A0 (en) A construct
AUPQ645400A0 (en) A ligand - II
AUPR194200A0 (en) A method-ii