SG89419A1 - Etching liquid composition - Google Patents
Etching liquid compositionInfo
- Publication number
- SG89419A1 SG89419A1 SG200105485A SG200105485A SG89419A1 SG 89419 A1 SG89419 A1 SG 89419A1 SG 200105485 A SG200105485 A SG 200105485A SG 200105485 A SG200105485 A SG 200105485A SG 89419 A1 SG89419 A1 SG 89419A1
- Authority
- SG
- Singapore
- Prior art keywords
- liquid composition
- etching liquid
- etching
- composition
- liquid
- Prior art date
Links
- 238000005530 etching Methods 0.000 title 1
- 239000007788 liquid Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Weting (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000272528 | 2000-09-08 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG89419A1 true SG89419A1 (en) | 2002-06-18 |
Family
ID=18758628
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200105485A SG89419A1 (en) | 2000-09-08 | 2001-09-07 | Etching liquid composition |
Country Status (7)
Country | Link |
---|---|
US (2) | US6914039B2 (ko) |
EP (2) | EP1187225B1 (ko) |
KR (1) | KR100821884B1 (ko) |
CN (1) | CN1253527C (ko) |
DE (1) | DE60124473T2 (ko) |
SG (1) | SG89419A1 (ko) |
TW (1) | TWI252261B (ko) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1187225B1 (en) * | 2000-09-08 | 2006-11-15 | Kanto Kagaku Kabushiki Kaisha | Etching liquid composition |
US6943142B2 (en) * | 2002-01-09 | 2005-09-13 | Air Products And Chemicals, Inc. | Aqueous stripping and cleaning composition |
TWI339680B (en) | 2002-02-19 | 2011-04-01 | Kanto Kagaku | Washing liquid composition for semiconductor substrate |
KR100519368B1 (ko) * | 2002-03-29 | 2005-10-07 | 엘지.필립스 엘시디 주식회사 | 액정표시소자 및 그 제조방법 |
JP4375991B2 (ja) * | 2003-04-09 | 2009-12-02 | 関東化学株式会社 | 半導体基板洗浄液組成物 |
JP4085094B2 (ja) * | 2004-02-19 | 2008-04-30 | シャープ株式会社 | 導電素子基板の製造方法、液晶表示装置の製造方法 |
TWI364072B (en) * | 2004-03-18 | 2012-05-11 | Dongjin Semichem Co Ltd | Etching composition |
KR101232249B1 (ko) * | 2004-08-10 | 2013-02-12 | 간또 가가꾸 가부시끼가이샤 | 반도체 기판 세정액 및 반도체 기판 세정방법 |
KR101167312B1 (ko) * | 2005-06-30 | 2012-07-19 | 엘지디스플레이 주식회사 | 미세 패턴 형성 방법과 그를 이용한 액정 표시 장치 및 그제조 방법 |
DE102005031469A1 (de) * | 2005-07-04 | 2007-01-11 | Merck Patent Gmbh | Medium zur Ätzung von oxidischen, transparenten, leitfähigen Schichten |
JP4816250B2 (ja) | 2006-05-25 | 2011-11-16 | 三菱瓦斯化学株式会社 | エッチング液組成物及びエッチング方法 |
CN101952485A (zh) * | 2007-11-22 | 2011-01-19 | 出光兴产株式会社 | 蚀刻液组合物 |
WO2009091012A1 (ja) * | 2008-01-15 | 2009-07-23 | Mitsubishi Paper Mills Limited | 銅または銅合金用のエッチング液、エッチング前処理液およびエッチング方法 |
JP5354989B2 (ja) * | 2008-08-14 | 2013-11-27 | 関東化学株式会社 | 透明導電膜用エッチング液組成物 |
JP6014985B2 (ja) * | 2010-10-01 | 2016-10-26 | 三菱化学株式会社 | 半導体デバイス用基板洗浄液及び洗浄方法 |
JP6261926B2 (ja) * | 2013-09-18 | 2018-01-17 | 関東化學株式会社 | 金属酸化物エッチング液組成物およびエッチング方法 |
CN104587936B (zh) * | 2015-01-30 | 2017-03-22 | 东莞佰鸿电子有限公司 | 一种光化学反应系统 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07141932A (ja) * | 1993-11-18 | 1995-06-02 | Kanto Chem Co Inc | 透明導電膜のエッチング液組成物 |
JPH1129882A (ja) * | 1997-07-08 | 1999-02-02 | Kanto Bussan Kk | 基材のエッチング方法及びそれに用いる酸性インク |
WO2000011107A1 (en) * | 1998-08-18 | 2000-03-02 | Ki Won Lee | Ito etching composition |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3898141A (en) * | 1974-02-08 | 1975-08-05 | Bell Telephone Labor Inc | Electrolytic oxidation and etching of III-V compound semiconductors |
US4344863A (en) * | 1978-08-04 | 1982-08-17 | Exxon Research & Engineering Co. | Process for defoaming acid gas scrubbing solutions and defoaming solutions |
US4532066A (en) * | 1984-03-05 | 1985-07-30 | Sterling Drug Inc. | Stable mildly acidic aqueous polishing cleanser and preparation thereof |
JPS63114132A (ja) * | 1986-10-31 | 1988-05-19 | Showa Denko Kk | 表面処理液 |
JPH04338643A (ja) * | 1991-05-16 | 1992-11-25 | Seiko Epson Corp | シリコンウェハーの加工方法 |
US5264109A (en) * | 1991-09-16 | 1993-11-23 | Siemens Power Corporation | Zirconium and zirconium alloy passivation process |
JP3289734B2 (ja) * | 1992-05-13 | 2002-06-10 | エルナー株式会社 | 電解コンデンサ用アルミニウム箔のエッチング方法 |
DE69418458T2 (de) * | 1993-02-04 | 2000-01-27 | Daikin Ind Ltd | Nassaetzungsverbindung fuer halbleiter mit ausgezeichneten befeuchtungseigenschaften |
US5489735A (en) * | 1994-01-24 | 1996-02-06 | D'muhala; Thomas F. | Decontamination composition for removing norms and method utilizing the same |
JPH09208267A (ja) * | 1996-02-02 | 1997-08-12 | Nippon Sheet Glass Co Ltd | 透明導電膜の電極加工方法 |
JPH1055993A (ja) * | 1996-08-09 | 1998-02-24 | Hitachi Ltd | 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法 |
US5968848A (en) * | 1996-12-27 | 1999-10-19 | Tokyo Ohka Kogyo Co., Ltd. | Process for treating a lithographic substrate and a rinse solution for the treatment |
KR100248113B1 (ko) * | 1997-01-21 | 2000-03-15 | 이기원 | 전자 표시 장치 및 기판용 세정 및 식각 조성물 |
US6284721B1 (en) * | 1997-01-21 | 2001-09-04 | Ki Won Lee | Cleaning and etching compositions |
SG78405A1 (en) * | 1998-11-17 | 2001-02-20 | Fujimi Inc | Polishing composition and rinsing composition |
JP4230631B2 (ja) * | 1999-12-20 | 2009-02-25 | 東芝電子エンジニアリング株式会社 | 透明導電膜のエッチング液組成物 |
US6310019B1 (en) * | 2000-07-05 | 2001-10-30 | Wako Pure Chemical Industries, Ltd. | Cleaning agent for a semi-conductor substrate |
EP1187225B1 (en) * | 2000-09-08 | 2006-11-15 | Kanto Kagaku Kabushiki Kaisha | Etching liquid composition |
-
2001
- 2001-09-05 EP EP01307555A patent/EP1187225B1/en not_active Expired - Lifetime
- 2001-09-05 EP EP05077944A patent/EP1646091A3/en not_active Withdrawn
- 2001-09-05 DE DE60124473T patent/DE60124473T2/de not_active Expired - Lifetime
- 2001-09-06 TW TW090122162A patent/TWI252261B/zh not_active IP Right Cessation
- 2001-09-06 US US09/947,483 patent/US6914039B2/en not_active Expired - Lifetime
- 2001-09-07 CN CNB011420510A patent/CN1253527C/zh not_active Expired - Lifetime
- 2001-09-07 SG SG200105485A patent/SG89419A1/en unknown
- 2001-09-08 KR KR1020010055280A patent/KR100821884B1/ko active IP Right Grant
-
2005
- 2005-05-13 US US11/128,622 patent/US7507350B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07141932A (ja) * | 1993-11-18 | 1995-06-02 | Kanto Chem Co Inc | 透明導電膜のエッチング液組成物 |
JPH1129882A (ja) * | 1997-07-08 | 1999-02-02 | Kanto Bussan Kk | 基材のエッチング方法及びそれに用いる酸性インク |
WO2000011107A1 (en) * | 1998-08-18 | 2000-03-02 | Ki Won Lee | Ito etching composition |
Also Published As
Publication number | Publication date |
---|---|
US7507350B2 (en) | 2009-03-24 |
US20050209119A1 (en) | 2005-09-22 |
DE60124473T2 (de) | 2007-09-06 |
EP1646091A2 (en) | 2006-04-12 |
EP1187225A2 (en) | 2002-03-13 |
KR20020020654A (ko) | 2002-03-15 |
TWI252261B (en) | 2006-04-01 |
EP1646091A3 (en) | 2006-04-19 |
CN1346864A (zh) | 2002-05-01 |
US6914039B2 (en) | 2005-07-05 |
KR100821884B1 (ko) | 2008-04-16 |
EP1187225A3 (en) | 2003-07-23 |
US20020055447A1 (en) | 2002-05-09 |
DE60124473D1 (de) | 2006-12-28 |
CN1253527C (zh) | 2006-04-26 |
EP1187225B1 (en) | 2006-11-15 |
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