SG166060A1 - Method of manufacturing soi substrate - Google Patents

Method of manufacturing soi substrate

Info

Publication number
SG166060A1
SG166060A1 SG201002398-4A SG2010023984A SG166060A1 SG 166060 A1 SG166060 A1 SG 166060A1 SG 2010023984 A SG2010023984 A SG 2010023984A SG 166060 A1 SG166060 A1 SG 166060A1
Authority
SG
Singapore
Prior art keywords
bond substrate
substrate
bond
soi substrate
embrittlement region
Prior art date
Application number
SG201002398-4A
Other languages
English (en)
Inventor
Kazuya Hanaoka
Hideki Tsuya
Masaharu Nagai
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG166060A1 publication Critical patent/SG166060A1/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H10P90/1916—Preparing SOI wafers using bonding with separation or delamination along an ion implanted layer, e.g. Smart-cut
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/201—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates the substrates comprising an insulating layer on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3238—Materials thereof being insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/181—Semiconductor-on-insulator [SOI] isolation regions, e.g. buried oxide regions of SOI wafers

Landscapes

  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Element Separation (AREA)
SG201002398-4A 2009-04-22 2010-04-06 Method of manufacturing soi substrate SG166060A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009104203 2009-04-22

Publications (1)

Publication Number Publication Date
SG166060A1 true SG166060A1 (en) 2010-11-29

Family

ID=42992513

Family Applications (2)

Application Number Title Priority Date Filing Date
SG201002398-4A SG166060A1 (en) 2009-04-22 2010-04-06 Method of manufacturing soi substrate
SG2012056420A SG183670A1 (en) 2009-04-22 2010-04-06 Method of manufacturing soi substrate

Family Applications After (1)

Application Number Title Priority Date Filing Date
SG2012056420A SG183670A1 (en) 2009-04-22 2010-04-06 Method of manufacturing soi substrate

Country Status (5)

Country Link
US (2) US8168481B2 (https=)
JP (1) JP5721962B2 (https=)
KR (1) KR101752350B1 (https=)
CN (1) CN101872740B (https=)
SG (2) SG166060A1 (https=)

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US11097122B2 (en) 2015-11-04 2021-08-24 The Regents Of The University Of California Magnetic stimulation of the spinal cord to restore control of bladder and/or bowel
US11235154B2 (en) 2017-02-17 2022-02-01 The University Of British Columbia Apparatus and methods for maintaining physiological functions
US12434068B2 (en) 2017-05-23 2025-10-07 The Regents Of The University Of California Accessing spinal networks to address sexual dysfunction
DE20168827T1 (de) 2017-06-30 2021-01-21 Gtx Medical B.V. System zur neuromodulierung
US12357828B2 (en) 2017-12-05 2025-07-15 Ecole Polytechnique Federale De Lausanne (Epfl) System for planning and/or providing neuromodulation
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EP3840638A4 (en) 2018-08-23 2022-05-18 The Regents Of The University Of California NON-INVASIVE SPINAL CORD STIMULATION FOR NERVE ROOT PALSY, CAUDA SYNDROME AND RESTORATION OF FUNCTION OF THE UPPER EXTREMITIES
DE18205821T1 (de) 2018-11-13 2020-12-24 Gtx Medical B.V. Steuerungssystem zur bewegungsrekonstruktion und/oder wiederherstellung für einen patienten
EP3653260A1 (en) 2018-11-13 2020-05-20 GTX medical B.V. Sensor in clothing of limbs or footwear
EP3695878B1 (en) 2019-02-12 2023-04-19 ONWARD Medical N.V. A system for neuromodulation
EP3824948A1 (en) 2019-11-19 2021-05-26 ONWARD Medical B.V. A planning and/or control system for a neuromodulation system
EP3827875B1 (en) 2019-11-27 2023-07-05 ONWARD Medical N.V. Neuromodulation system
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Also Published As

Publication number Publication date
US20120208348A1 (en) 2012-08-16
CN101872740A (zh) 2010-10-27
US20100273310A1 (en) 2010-10-28
SG183670A1 (en) 2012-09-27
KR20100116536A (ko) 2010-11-01
KR101752350B1 (ko) 2017-06-29
US8168481B2 (en) 2012-05-01
JP2010272851A (ja) 2010-12-02
JP5721962B2 (ja) 2015-05-20
US8486772B2 (en) 2013-07-16
CN101872740B (zh) 2014-05-07

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