SG162680A1 - Wet clean compositions for cowp and porous dielectrics - Google Patents

Wet clean compositions for cowp and porous dielectrics

Info

Publication number
SG162680A1
SG162680A1 SG200908163-9A SG2009081639A SG162680A1 SG 162680 A1 SG162680 A1 SG 162680A1 SG 2009081639 A SG2009081639 A SG 2009081639A SG 162680 A1 SG162680 A1 SG 162680A1
Authority
SG
Singapore
Prior art keywords
cowp
formulation
wet clean
porous dielectrics
amine
Prior art date
Application number
SG200908163-9A
Other languages
English (en)
Inventor
Aiping Wu
Madhukar Bhaskara Rao
Eugene C Baryschpolec
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of SG162680A1 publication Critical patent/SG162680A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2065—Polyhydric alcohols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3218—Alkanolamines or alkanolimines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • C11D7/5004—Organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
SG200908163-9A 2008-12-17 2009-12-08 Wet clean compositions for cowp and porous dielectrics SG162680A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13824408P 2008-12-17 2008-12-17
US12/624,970 US8361237B2 (en) 2008-12-17 2009-11-24 Wet clean compositions for CoWP and porous dielectrics

Publications (1)

Publication Number Publication Date
SG162680A1 true SG162680A1 (en) 2010-07-29

Family

ID=42019924

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200908163-9A SG162680A1 (en) 2008-12-17 2009-12-08 Wet clean compositions for cowp and porous dielectrics

Country Status (7)

Country Link
US (1) US8361237B2 (ja)
EP (1) EP2199379B1 (ja)
JP (1) JP5096447B2 (ja)
KR (1) KR101131228B1 (ja)
CN (1) CN101760355B (ja)
SG (1) SG162680A1 (ja)
TW (1) TWI461525B (ja)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8211844B2 (en) * 2005-10-21 2012-07-03 Freescale Semiconductor, Inc. Method for cleaning a semiconductor structure and chemistry thereof
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
CN101827928B (zh) * 2007-08-08 2012-10-03 荒川化学工业株式会社 用于除去无铅助焊剂的清洁剂组合物以及用于除去无铅助焊剂的方法
US9232167B2 (en) * 2009-08-04 2016-01-05 Echostar Technologies L.L.C. Video system and remote control with touch interface for supplemental content display
US9081291B2 (en) * 2009-08-11 2015-07-14 Dongwoo Fine-Chem Co., Ltd. Resist stripping solution composition, and method for stripping resist by using same
BR112012018074A2 (pt) * 2010-01-21 2017-09-19 Sun Chemical Corp "sistema de solventes com baixo voc"
KR101829399B1 (ko) * 2010-03-04 2018-03-30 삼성전자주식회사 감광성 수지 제거제 조성물 및 이를 이용하는 반도체 제조 공정
JP5508130B2 (ja) * 2010-05-14 2014-05-28 富士フイルム株式会社 洗浄組成物、半導体装置の製造方法及び洗浄方法
JP5674373B2 (ja) * 2010-07-30 2015-02-25 富士フイルム株式会社 洗浄組成物、これを用いた洗浄方法及び半導体素子の製造方法
US20130261040A1 (en) * 2010-11-29 2013-10-03 Wako Pure Chemical Industries, Ltd. Substrate cleaner for copper wiring, and method for cleaning copper wiring semiconductor substrate
WO2012166902A1 (en) * 2011-06-01 2012-12-06 Avantor Performance Materials, Inc. SEMI-AQUEOUS POLYMER REMOVAL COMPOSITIONS WITH ENHANCED COMPATIBILITY TO COPPER, TUNGSTEN, AND POROUS LOW-ĸ DIELECTRICS
SG10201605697UA (en) * 2011-08-09 2016-09-29 Basf Se Aqueous alkaline compositions and method for treating the surface of silicon substrates
CN102513735A (zh) * 2011-12-27 2012-06-27 厦门市及时雨焊料有限公司 一种用于高含铋锡膏的助焊膏及其制备方法
US8753836B2 (en) * 2012-01-23 2014-06-17 Richard-Allan Scientific Company Dewaxing buffer containing a water-soluble organic solvent and methods of use thereof
CN103293882A (zh) * 2012-02-23 2013-09-11 安集微电子（上海）有限公司 一种光刻胶清洗液
WO2013138278A1 (en) * 2012-03-12 2013-09-19 Advanced Technology Materials, Inc. Copper cleaning and protection formulations
US20140100151A1 (en) * 2012-10-08 2014-04-10 Air Products And Chemicals Inc. Stripping and Cleaning Compositions for Removal of Thick Film Resist
US9536730B2 (en) 2012-10-23 2017-01-03 Air Products And Chemicals, Inc. Cleaning formulations
US9158202B2 (en) * 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
WO2014151361A1 (en) * 2013-03-15 2014-09-25 Cabot Microelectronics Corporation Aqueous cleaning composition for post copper chemical mechanical planarization
CN104148018B (zh) * 2013-05-14 2018-04-20 上海亨臻实业有限公司 抗体亲和纯化材料及其用途
EP3060642B1 (en) * 2013-10-21 2019-11-06 FujiFilm Electronic Materials USA, Inc. Cleaning formulations for removing residues on surfaces
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US20150159122A1 (en) * 2013-12-09 2015-06-11 General Electric Company Cleaning solution and methods of cleaning a turbine engine
US9926517B2 (en) 2013-12-09 2018-03-27 General Electric Company Cleaning solution and methods of cleaning a turbine engine
KR102115548B1 (ko) * 2013-12-16 2020-05-26 삼성전자주식회사 유기물 세정 조성물 및 이를 이용하는 반도체 장치의 제조 방법
CN104946429A (zh) * 2014-03-26 2015-09-30 安集微电子科技(上海)有限公司 一种低蚀刻的去除光阻蚀刻残留物的清洗液
TWI636131B (zh) * 2014-05-20 2018-09-21 日商Ｊｓｒ股份有限公司 清洗用組成物及清洗方法
TWI551681B (zh) * 2014-07-18 2016-10-01 卡博特微電子公司 於ｃｍｐ後使用之清潔組合物及其相關方法
JP6296974B2 (ja) * 2014-12-25 2018-03-20 四日市合成株式会社 安定化四級アンモニウム水酸化物水溶液及びその製造方法
TWI690780B (zh) 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 用於自半導體基板去除光阻之剝離組成物
US9957066B2 (en) 2015-02-13 2018-05-01 General Electric Company Detergent delivery methods and systems for turbine engines
CN107787380B (zh) 2015-05-28 2020-10-30 艺康美国股份有限公司 2-取代的咪唑和苯并咪唑腐蚀抑制剂
WO2016191680A1 (en) 2015-05-28 2016-12-01 Ecolab Usa Inc. Purine-based corrosion inhibitors
AU2016267601B2 (en) 2015-05-28 2020-06-11 Ecolab Usa Inc. Novel corrosion inhibitors
EP3303655A4 (en) 2015-05-28 2019-02-27 Ecolab Usa Inc. WATER-SOLUBLE PYRAZOLE DERIVATIVES AS CORROSION INHIBITORS
US10233413B2 (en) * 2015-09-23 2019-03-19 Versum Materials Us, Llc Cleaning formulations
BR102016021259B1 (pt) 2015-10-05 2022-06-14 General Electric Company Método e soluções de limpeza de um motor de turbina e composição de reagente
JP6681750B2 (ja) * 2016-03-04 2020-04-15 東京応化工業株式会社 洗浄液及び洗浄方法
KR102363336B1 (ko) * 2016-05-23 2022-02-15 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 반도체 기판으로부터 포토레지스트를 제거하기 위한 박리 조성물
CN107526255A (zh) * 2016-06-15 2017-12-29 东友精细化工有限公司 抗蚀剂剥离液组合物
KR102434147B1 (ko) * 2016-10-06 2022-08-19 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 반도체 기판상의 잔류물을 제거하기 위한 세정 제형
CN106835147A (zh) * 2017-03-17 2017-06-13 中国船舶重工集团公司第七二五研究所 一种电子设备用气相缓蚀剂组合物
JP7077505B2 (ja) * 2017-03-24 2022-05-31 フジフイルム エレクトロニック マテリアルズ ユー．エス．エー．， インコーポレイテッド 半導体基板上の残渣を除去するための洗浄組成物
US10832917B2 (en) 2017-06-09 2020-11-10 International Business Machines Corporation Low oxygen cleaning for CMP equipment
CN107245389A (zh) * 2017-07-17 2017-10-13 苏州龙腾万里化工科技有限公司 一种环保锡膏清洗剂
WO2019044463A1 (ja) * 2017-08-31 2019-03-07 富士フイルム株式会社 処理液、キット、基板の洗浄方法
US10954480B2 (en) * 2017-09-29 2021-03-23 Versum Materials Us, Llc Compositions and methods for preventing collapse of high aspect ratio structures during drying
CN109666927B (zh) * 2017-10-17 2020-12-25 中国石油化工股份有限公司 一种导热系统封存保护剂及其制备方法与应用
IL277275B2 (en) 2018-03-28 2023-11-01 Fujifilm Electronic Mat Usa Inc cleaning products
EP3824059A4 (en) 2018-07-20 2022-04-27 Entegris, Inc. CORROSION INHIBITOR CLEANING COMPOSITION
CN111334805A (zh) * 2018-10-31 2020-06-26 湖南博隽生物医药有限公司 一种血液透析机液路系统除锈剂的制备方法
SG11202111643QA (en) 2019-04-24 2021-11-29 Fujifilm Electronic Materials U S A Inc Stripping compositions for removing photoresists from semiconductor substrates
CN110003996B (zh) * 2019-05-21 2021-03-23 广东剑鑫科技股份有限公司 一种浸泡液及其制备方法和使用方法
WO2021067147A1 (en) * 2019-09-30 2021-04-08 Versum Materials Us, Llc Photoresist remover
CN113130292A (zh) * 2019-12-31 2021-07-16 安集微电子科技（上海）股份有限公司 一种等离子体刻蚀残留物清洗液
TW202208607A (zh) * 2020-08-27 2022-03-01 美商富士軟片電子材料美國股份有限公司 清潔組成物
KR20220037101A (ko) 2020-09-17 2022-03-24 삼성전자주식회사 이중 캡핑 구조를 가진 배선 구조, 이의 제조 방법 및 이를 구비한 집적회로 칩
CN116457447A (zh) * 2020-10-05 2023-07-18 恩特格里斯公司 化学机械抛光后(post cmp)清洁组合物
WO2023285408A2 (en) * 2021-07-15 2023-01-19 Merck Patent Gmbh Electronic device manufacturing aqueous solution, method for manufacturing resist pattern and method for manufacturing device
TWI812342B (zh) * 2021-11-22 2023-08-11 南韓商Ｌｇ化學股份有限公司 移除光阻之剝離劑組成物以及使用其之剝離光阻方法
WO2023170021A1 (en) * 2022-03-09 2023-09-14 Merck Patent Gmbh Electronic device manufacturing solution, method for manufacturing resist pattern, and method for manufacturing device

Family Cites Families (40)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6546939B1 (en) * 1990-11-05 2003-04-15 Ekc Technology, Inc. Post clean treatment
US20040018949A1 (en) * 1990-11-05 2004-01-29 Wai Mun Lee Semiconductor process residue removal composition and process
US6268323B1 (en) * 1997-05-05 2001-07-31 Arch Specialty Chemicals, Inc. Non-corrosive stripping and cleaning composition
SE512874C2 (sv) 1998-09-07 2000-05-29 Rolf Skoeld Ett förfarande för mekanisk bearbetning i närvaro av en koboltinnehållande metall
US6174812B1 (en) * 1999-06-08 2001-01-16 United Microelectronics Corp. Copper damascene technology for ultra large scale integration circuits
US6723691B2 (en) 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
MY131912A (en) * 2001-07-09 2007-09-28 Avantor Performance Mat Inc Ammonia-free alkaline microelectronic cleaning compositions with improved substrate compatibility
JP3797541B2 (ja) * 2001-08-31 2006-07-19 東京応化工業株式会社 ホトレジスト用剥離液
JP3667273B2 (ja) * 2001-11-02 2005-07-06 Ｎｅｃエレクトロニクス株式会社 洗浄方法および洗浄液
US6943142B2 (en) * 2002-01-09 2005-09-13 Air Products And Chemicals, Inc. Aqueous stripping and cleaning composition
US6717019B2 (en) 2002-01-30 2004-04-06 Air Products And Chemicals, Inc. Glycidyl ether-capped acetylenic diol ethoxylate surfactants
US8003587B2 (en) * 2002-06-06 2011-08-23 Ekc Technology, Inc. Semiconductor process residue removal composition and process
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
JP2004302271A (ja) 2003-03-31 2004-10-28 Nippon Zeon Co Ltd レジスト用剥離液及び剥離方法
US7736405B2 (en) * 2003-05-12 2010-06-15 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for copper and associated materials and method of using same
CN101371339A (zh) * 2003-05-12 2009-02-18 高级技术材料公司 用于步骤ⅱ的铜衬里和其他相关材料的化学机械抛光组合物及其使用方法
US20050032657A1 (en) 2003-08-06 2005-02-10 Kane Sean Michael Stripping and cleaning compositions for microelectronics
US7259463B2 (en) * 2004-12-03 2007-08-21 Taiwan Semiconductor Manufacturing Company, Ltd. Damascene interconnect structure with cap layer
US7253106B2 (en) * 2004-12-22 2007-08-07 International Business Machines Corporation Manufacturable CoWP metal cap process for copper interconnects
KR101331747B1 (ko) 2005-01-27 2013-11-20 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 반도체 기판 처리 조성물
US7923423B2 (en) * 2005-01-27 2011-04-12 Advanced Technology Materials, Inc. Compositions for processing of semiconductor substrates
TW200734482A (en) 2005-03-18 2007-09-16 Applied Materials Inc Electroless deposition process on a contact containing silicon or silicide
WO2006127885A1 (en) 2005-05-26 2006-11-30 Advanced Technology Materials, Inc. Copper passivating post-chemical mechanical polishing cleaning composition and method of use
US7700533B2 (en) * 2005-06-23 2010-04-20 Air Products And Chemicals, Inc. Composition for removal of residue comprising cationic salts and methods using same
US7394154B2 (en) * 2005-09-13 2008-07-01 International Business Machines Corporation Embedded barrier for dielectric encapsulation
US7879782B2 (en) 2005-10-13 2011-02-01 Air Products And Chemicals, Inc. Aqueous cleaning composition and method for using same
US20070099806A1 (en) * 2005-10-28 2007-05-03 Stewart Michael P Composition and method for selectively removing native oxide from silicon-containing surfaces
KR20070071020A (ko) * 2005-12-29 2007-07-04 동부일렉트로닉스 주식회사 캐핑 금속층에 의해 보호된 구리 금속 배선 및 그 제조방법
US20070179072A1 (en) * 2006-01-30 2007-08-02 Rao Madhukar B Cleaning formulations
US20070225186A1 (en) * 2006-03-27 2007-09-27 Matthew Fisher Alkaline solutions for post CMP cleaning processes
US7300868B2 (en) * 2006-03-30 2007-11-27 Sony Corporation Damascene interconnection having porous low k layer with a hard mask reduced in thickness
US7772128B2 (en) * 2006-06-09 2010-08-10 Lam Research Corporation Semiconductor system with surface modification
WO2008001698A1 (en) * 2006-06-26 2008-01-03 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US20080076688A1 (en) * 2006-09-21 2008-03-27 Barnes Jeffrey A Copper passivating post-chemical mechanical polishing cleaning composition and method of use
JP2008103575A (ja) 2006-10-20 2008-05-01 Matsushita Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
TWI611047B (zh) 2006-12-21 2018-01-11 恩特葛瑞斯股份有限公司 用以移除蝕刻後殘餘物之液體清洗劑
JP5267130B2 (ja) 2006-12-22 2013-08-21 日本電気株式会社 半導体装置およびその製造方法
CN100483677C (zh) 2007-01-29 2009-04-29 清华大学 用超声化学镀制备集成电路铜互连线和阻挡层的方法
US8404626B2 (en) * 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US8357646B2 (en) 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal

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EP2199379A1 (en) 2010-06-23
JP5096447B2 (ja) 2012-12-12
TW201024404A (en) 2010-07-01
KR20100070308A (ko) 2010-06-25
TWI461525B (zh) 2014-11-21
US8361237B2 (en) 2013-01-29
EP2199379B1 (en) 2013-07-17
CN101760355B (zh) 2012-08-22
US20100152086A1 (en) 2010-06-17
JP2010147476A (ja) 2010-07-01
CN101760355A (zh) 2010-06-30

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