SG157293A1 - Acid generating agent for chemically amplified resist compositions - Google Patents

Acid generating agent for chemically amplified resist compositions

Info

Publication number
SG157293A1
SG157293A1 SG200903072-7A SG2009030727A SG157293A1 SG 157293 A1 SG157293 A1 SG 157293A1 SG 2009030727 A SG2009030727 A SG 2009030727A SG 157293 A1 SG157293 A1 SG 157293A1
Authority
SG
Singapore
Prior art keywords
generating agent
chemically amplified
amplified resist
resist compositions
acid generating
Prior art date
Application number
SG200903072-7A
Other languages
English (en)
Inventor
Jin-Ho Kim
Jung-Hoon Oh
Hyun-Soon Lim
Original Assignee
Korea Kumho Petrochem Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Kumho Petrochem Co Ltd filed Critical Korea Kumho Petrochem Co Ltd
Publication of SG157293A1 publication Critical patent/SG157293A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
    • C07C309/68—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a carbon skeleton substituted by singly-bound oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C329/00—Thiocarbonic acids; Halides, esters or anhydrides thereof
    • C07C329/02—Monothiocarbonic acids; Derivatives thereof
    • C07C329/04—Esters of monothiocarbonic acids
    • C07C329/06—Esters of monothiocarbonic acids having sulfur atoms of thiocarbonic groups bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
SG200903072-7A 2008-05-21 2009-05-06 Acid generating agent for chemically amplified resist compositions SG157293A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080046898A KR100973033B1 (ko) 2008-05-21 2008-05-21 화학증폭형 레지스트 조성물용 산발생제

Publications (1)

Publication Number Publication Date
SG157293A1 true SG157293A1 (en) 2009-12-29

Family

ID=41342381

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200903072-7A SG157293A1 (en) 2008-05-21 2009-05-06 Acid generating agent for chemically amplified resist compositions

Country Status (6)

Country Link
US (1) US8241831B2 (zh)
JP (1) JP5086955B2 (zh)
KR (1) KR100973033B1 (zh)
CN (1) CN101585794B (zh)
SG (1) SG157293A1 (zh)
TW (1) TWI385486B (zh)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5401800B2 (ja) * 2007-02-15 2014-01-29 セントラル硝子株式会社 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法
JP5347349B2 (ja) 2007-09-18 2013-11-20 セントラル硝子株式会社 ２−ブロモ−２，２−ジフルオロエタノール及び２−（アルキルカルボニルオキシ）−１，１−ジフルオロエタンスルホン酸塩類の製造方法
WO2009057769A1 (ja) * 2007-11-01 2009-05-07 Central Glass Company, Limited 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4513990B2 (ja) * 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4844761B2 (ja) * 2008-01-18 2011-12-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4513989B2 (ja) * 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
EP2101217B1 (en) * 2008-03-14 2011-05-11 Shin-Etsu Chemical Co., Ltd. Sulfonium salt-containing polymer, resist compositon, and patterning process
JP5268588B2 (ja) * 2008-07-18 2013-08-21 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物および酸発生剤
KR101115576B1 (ko) * 2009-10-01 2012-03-06 금호석유화학 주식회사 술포니움 염의 제조 방법 및 이에 의하여 제조된 술포니움 염
JP5557657B2 (ja) * 2010-09-02 2014-07-23 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、新規な化合物及び酸発生剤
KR101843599B1 (ko) * 2010-09-09 2018-03-29 제이에스알 가부시끼가이샤 감방사선성 수지 조성물
JP5153934B2 (ja) * 2010-11-29 2013-02-27 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、感活性光線性又は感放射線性膜及びパターン形成方法
KR101332316B1 (ko) * 2011-02-07 2013-11-22 금호석유화학 주식회사 광산발생제, 이의 제조 방법 및 이를 포함하는 레지스트 조성물
KR101229314B1 (ko) * 2011-02-07 2013-02-04 금호석유화학 주식회사 광산발생제, 이의 제조 방법 및 이를 포함하는 레지스트 조성물
JP6218358B2 (ja) * 2011-04-13 2017-10-25 住友化学株式会社 塩、フォトレジスト組成物及びレジストパターンの製造方法
JP2013079232A (ja) * 2011-09-30 2013-05-02 Rohm & Haas Electronic Materials Llc 光酸発生剤およびこれを含むフォトレジスト
KR101434659B1 (ko) * 2012-10-15 2014-08-28 금호석유화학 주식회사 광산발생제 및 이를 포함하는 레지스트 조성물
KR101361623B1 (ko) * 2012-10-15 2014-02-11 금호석유화학주식회사 광산발생제 및 이를 포함하는 레지스트 조성물
KR101507827B1 (ko) * 2012-11-19 2015-04-06 금호석유화학 주식회사 광산발생제 및 이를 포함하는 레지스트 조성물
TWI619699B (zh) 2015-12-31 2018-04-01 Rohm And Haas Electronic Materials Llc 光酸產生劑
TWI662364B (zh) 2015-12-31 2019-06-11 Rohm And Haas Electronic Materials Llc 光致抗蝕劑組合物、包含光致抗蝕劑組合物的經塗佈基板及形成電子裝置的方法
KR102422243B1 (ko) * 2016-07-28 2022-07-19 삼성전자주식회사 광산 발생제 및 이를 포함하는 포토레지스트 조성물
US11112698B2 (en) * 2016-11-29 2021-09-07 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist with gradient composition for improved uniformity
CN111138407A (zh) * 2019-12-28 2020-05-12 上海博栋化学科技有限公司 由喇叭茶醇合成的磺酸锍盐类光酸产生剂及其合成方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030113659A1 (en) * 2001-08-24 2003-06-19 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
EP1710230A1 (en) * 2005-04-06 2006-10-11 Shin-Etsu Chemical Co., Ltd. Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
WO2006133330A1 (en) * 2005-06-07 2006-12-14 E. I. Du Pont De Nemours And Company Hydrofluoroalkanesulfonic acids and salts from fluorovinyl ethers
US20070099112A1 (en) * 2005-10-31 2007-05-03 Shin-Etsu Chemical Co., Ltd. Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US20080085469A1 (en) * 2006-09-28 2008-04-10 Shin-Etsu Chemical Co., Ltd. Novel photoacid generators, resist compositions, and patterning process
WO2008099869A1 (ja) * 2007-02-15 2008-08-21 Central Glass Company, Limited 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法
WO2009037980A1 (ja) * 2007-09-18 2009-03-26 Central Glass Company, Limited ２－ブロモ－２，２－ジフルオロエタノール及び２－（アルキルカルボニルオキシ）－１，１－ジフルオロエタンスルホン酸塩類の製造方法
WO2009057769A1 (ja) * 2007-11-01 2009-05-07 Central Glass Company, Limited 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005089355A2 (en) 2004-03-16 2005-09-29 Cornell Research Foundation, Inc. Environmentally friendly photoacid generators (pags) with no perfluorooctyl sulfonates (pfos)
JP4484681B2 (ja) * 2004-12-03 2010-06-16 富士フイルム株式会社 感光性組成物及び該感光性組成物を用いたパターン形成方法
JP4816921B2 (ja) * 2005-04-06 2011-11-16 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5125057B2 (ja) * 2005-10-28 2013-01-23 住友化学株式会社 化学増幅型レジスト組成物の酸発生剤用の塩
JP4905666B2 (ja) * 2005-10-31 2012-03-28 信越化学工業株式会社 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4548616B2 (ja) * 2006-05-15 2010-09-22 信越化学工業株式会社 熱酸発生剤及びこれを含むレジスト下層膜材料、並びにこのレジスト下層膜材料を用いたパターン形成方法
JP5124806B2 (ja) * 2006-06-27 2013-01-23 信越化学工業株式会社 光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5347349B2 (ja) * 2007-09-18 2013-11-20 セントラル硝子株式会社 ２−ブロモ−２，２−ジフルオロエタノール及び２−（アルキルカルボニルオキシ）−１，１−ジフルオロエタンスルホン酸塩類の製造方法
JP4844761B2 (ja) * 2008-01-18 2011-12-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
KR100940915B1 (ko) * 2008-03-13 2010-02-08 금호석유화학 주식회사 화학증폭형 레지스트 조성물용 산발생제
JP5245956B2 (ja) * 2008-03-25 2013-07-24 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4569786B2 (ja) * 2008-05-01 2010-10-27 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030113659A1 (en) * 2001-08-24 2003-06-19 Shin-Etsu Chemical Co., Ltd. Resist compositions and patterning process
EP1710230A1 (en) * 2005-04-06 2006-10-11 Shin-Etsu Chemical Co., Ltd. Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
WO2006133330A1 (en) * 2005-06-07 2006-12-14 E. I. Du Pont De Nemours And Company Hydrofluoroalkanesulfonic acids and salts from fluorovinyl ethers
US20070099112A1 (en) * 2005-10-31 2007-05-03 Shin-Etsu Chemical Co., Ltd. Novel sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process
US20080085469A1 (en) * 2006-09-28 2008-04-10 Shin-Etsu Chemical Co., Ltd. Novel photoacid generators, resist compositions, and patterning process
WO2008099869A1 (ja) * 2007-02-15 2008-08-21 Central Glass Company, Limited 光酸発生剤用化合物及びそれを用いたレジスト組成物、パターン形成方法
WO2009037980A1 (ja) * 2007-09-18 2009-03-26 Central Glass Company, Limited ２－ブロモ－２，２－ジフルオロエタノール及び２－（アルキルカルボニルオキシ）－１，１－ジフルオロエタンスルホン酸塩類の製造方法
WO2009057769A1 (ja) * 2007-11-01 2009-05-07 Central Glass Company, Limited 新規スルホン酸塩及びその誘導体、光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法

Also Published As

Publication number Publication date
US8241831B2 (en) 2012-08-14
KR20090120866A (ko) 2009-11-25
TWI385486B (zh) 2013-02-11
JP2009280562A (ja) 2009-12-03
CN101585794B (zh) 2014-05-07
JP5086955B2 (ja) 2012-11-28
TW201003316A (en) 2010-01-16
US20090291390A1 (en) 2009-11-26
KR100973033B1 (ko) 2010-07-30
CN101585794A (zh) 2009-11-25

Similar Documents

Publication Publication Date Title
SG157293A1 (en) Acid generating agent for chemically amplified resist compositions
GB2446273B (en) Chemically amplified resist composition
GB2446687B (en) Chemically amplified resist composition
GB2444823B (en) Chemically amplified resist composition
PL2324842T3 (pl) Środek indukujący odporność
ZA201103926B (en) Stable sulfoximine-insecticide compositions
EP2464626A4 (en) PROCESSES, COMPOUNDS AND COMPOSITIONS FOR THE EXPORTS OF 1,3-PROPANE-SULFONIC ACID
EP2094118A4 (en) IMPROVED PERACIC ACID COMPOSITION
EP2037872A4 (en) COMPOSITIONS COMPRISING BITULONIC ACID
EP2251392A4 (en) MEDIUM TO RELEASE A FUNCTIONAL SUBSTANCE
EP2315808A4 (en) POLYCARBONATE-ACIDICALLY MODIFIED POLYLACTIC ACID COMPOSITION RESISTANT TO SHOCK
GB2447789B (en) Chemically amplified resist composition
ZA201002169B (en) High concentration chitosan-nucleic acid polyplex compositions
EP2280032A4 (en) PHOTOPOLYMERIZABLE COMPOSITIONS
SI2340271T1 (sl) Konjugati polimer-bioaktivnega sredstva
ZA201203012B (en) Solid pharmaceutical compositions containing an intergrase inhibitor
EP2438486A4 (en) Chemically Reinforced Positive Color Composition
EP2246060A4 (en) PROTECTIVE AGENT FOR THE FUNCTION OF THE LIVER
GB2447350B (en) Chemically amplified resist composition
GB2445275B (en) Chemically amplified resist composition
ZA201006796B (en) Surfactant compositions
IL208325A0 (en) Stabilizing lipis compositions for oral pharmaceutical agents
IL209462A0 (en) Opiorphin for use as a psychotimulant agent
AP2011005596A0 (en) Use of hydroxy-2-hydroxymethyl-y-pyrone (HMP) as aleishmanicidal agent.
PL2379056T3 (pl) Stała kompozycja farmaceutyczna zawierająca co najmniej jeden środek stabilizujący