SG148967A1 - Process for cleaning a semiconductor wafer using a cleaning solution - Google Patents

Process for cleaning a semiconductor wafer using a cleaning solution

Info

Publication number
SG148967A1
SG148967A1 SG200804774-8A SG2008047748A SG148967A1 SG 148967 A1 SG148967 A1 SG 148967A1 SG 2008047748 A SG2008047748 A SG 2008047748A SG 148967 A1 SG148967 A1 SG 148967A1
Authority
SG
Singapore
Prior art keywords
cleaning
semiconductor wafer
cleaning solution
solution
composition
Prior art date
Application number
SG200804774-8A
Other languages
English (en)
Inventor
Clemens Zapilko
Thomas Buschhardt
Diego Feijoo
Guenter Schwab
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG148967A1 publication Critical patent/SG148967A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/08—Acids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
SG200804774-8A 2007-07-04 2008-06-24 Process for cleaning a semiconductor wafer using a cleaning solution SG148967A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007030957A DE102007030957A1 (de) 2007-07-04 2007-07-04 Verfahren zum Reinigen einer Halbleiterscheibe mit einer Reinigungslösung

Publications (1)

Publication Number Publication Date
SG148967A1 true SG148967A1 (en) 2009-01-29

Family

ID=40092362

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200804774-8A SG148967A1 (en) 2007-07-04 2008-06-24 Process for cleaning a semiconductor wafer using a cleaning solution

Country Status (7)

Country Link
US (1) US7938911B2 (ko)
JP (1) JP4889691B2 (ko)
KR (1) KR100992479B1 (ko)
CN (1) CN101337227B (ko)
DE (1) DE102007030957A1 (ko)
SG (1) SG148967A1 (ko)
TW (1) TWI388657B (ko)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8226840B2 (en) 2008-05-02 2012-07-24 Micron Technology, Inc. Methods of removing silicon dioxide
US8226772B2 (en) * 2009-01-08 2012-07-24 Micron Technology, Inc. Methods of removing particles from over semiconductor substrates
SG170691A1 (en) 2009-10-14 2011-05-30 Rohm & Haas Elect Mat Method of cleaning and micro-etching semiconductor wafers
CN102310060A (zh) * 2011-07-07 2012-01-11 苏州赤诚洗净科技有限公司 太阳能电池硅片的清洗装置
CN102909204B (zh) * 2011-08-05 2014-11-05 美新半导体（无锡）有限公司 清洗深硅刻蚀工艺后的圆片的方法
CN102921656A (zh) * 2011-08-10 2013-02-13 无锡华润上华科技有限公司 半导体晶圆的清洗装置及其清洗方法
CA3085086C (en) 2011-12-06 2023-08-08 Delta Faucet Company Ozone distribution in a faucet
JP2013187401A (ja) * 2012-03-08 2013-09-19 Dainippon Screen Mfg Co Ltd 基板処理装置及び基板処理方法
TWI630034B (zh) * 2014-09-18 2018-07-21 台灣積體電路製造股份有限公司 半導體基板的清潔方法與半導體裝置的製作方法
CN108463437B (zh) 2015-12-21 2022-07-08 德尔塔阀门公司 包括消毒装置的流体输送系统

Family Cites Families (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3607480A (en) * 1968-12-30 1971-09-21 Texas Instruments Inc Process for etching composite layered structures including a layer of fluoride-etchable silicon nitride and a layer of silicon dioxide
USRE31198E (en) * 1974-02-14 1983-04-05 Amchem Products, Inc. Method for cleaning aluminum at low temperatures
US3923567A (en) * 1974-08-09 1975-12-02 Silicon Materials Inc Method of reclaiming a semiconductor wafer
US4171242A (en) * 1976-12-17 1979-10-16 International Business Machines Corporation Neutral pH silicon etchant for etching silicon in the presence of phosphosilicate glass
US4261791A (en) * 1979-09-25 1981-04-14 Rca Corporation Two step method of cleaning silicon wafers
DE3142216A1 (de) * 1981-10-24 1983-05-11 Hoechst Ag, 6230 Frankfurt Verfahren zum aufschluss von zellulosehaltigem material mit gasfoermigem fluorwasserstoff
DE3142215A1 (de) * 1981-10-24 1983-05-05 Hoechst Ag, 6230 Frankfurt "verfahren zum aufschluss von zellulosehaltigem material mit gasfoermigem fluorwasserstoff"
FR2539140A1 (fr) * 1983-01-07 1984-07-13 Ugine Kuhlmann Stabilisation de solutions aqueuses contenant du peroxyde d'hydrogene, de l'acide fluorhydrique et des ions metalliques
US4778532A (en) * 1985-06-24 1988-10-18 Cfm Technologies Limited Partnership Process and apparatus for treating wafers with process fluids
US4911761A (en) * 1984-05-21 1990-03-27 Cfm Technologies Research Associates Process and apparatus for drying surfaces
JPS63283028A (ja) * 1986-09-29 1988-11-18 Hashimoto Kasei Kogyo Kk 微細加工表面処理剤
DE3725346A1 (de) * 1987-07-30 1989-02-09 Nukem Gmbh Verfahren zur wiederverwendung von silizium-basismaterial einer metall-isolator-halbleiter-(mis)-inversionsschicht-solarzelle
US5275184A (en) * 1990-10-19 1994-01-04 Dainippon Screen Mfg. Co., Ltd. Apparatus and system for treating surface of a wafer by dipping the same in a treatment solution and a gate device for chemical agent used in the apparatus and the system
JPH04196424A (ja) * 1990-11-28 1992-07-16 Seiko Epson Corp 半導体装置の洗浄方法
JP3154814B2 (ja) * 1991-06-28 2001-04-09 株式会社東芝 半導体ウエハの洗浄方法および洗浄装置
JP3074366B2 (ja) * 1993-02-22 2000-08-07 東京エレクトロン株式会社 処理装置
JP3347814B2 (ja) * 1993-05-17 2002-11-20 大日本スクリーン製造株式会社 基板の洗浄・乾燥処理方法並びにその処理装置
US5656097A (en) * 1993-10-20 1997-08-12 Verteq, Inc. Semiconductor wafer cleaning system
US5950645A (en) * 1993-10-20 1999-09-14 Verteq, Inc. Semiconductor wafer cleaning system
JPH08195369A (ja) * 1995-01-13 1996-07-30 Daikin Ind Ltd 基板の洗浄方法
US5783495A (en) * 1995-11-13 1998-07-21 Micron Technology, Inc. Method of wafer cleaning, and system and cleaning solution regarding same
JP3590470B2 (ja) * 1996-03-27 2004-11-17 アルプス電気株式会社 洗浄水生成方法および洗浄方法ならびに洗浄水生成装置および洗浄装置
US5948684A (en) * 1997-03-31 1999-09-07 University Of Washington Simultaneous analyte determination and reference balancing in reference T-sensor devices
US5855811A (en) * 1996-10-03 1999-01-05 Micron Technology, Inc. Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
US5931173A (en) * 1997-06-09 1999-08-03 Cypress Semiconductor Corporation Monitoring cleaning effectiveness of a cleaning system
JP2002505037A (ja) 1997-06-13 2002-02-12 シーエフエムテイ・インコーポレーテツド 半導体ウェーハ処理方法
US5893756A (en) * 1997-08-26 1999-04-13 Lsi Logic Corporation Use of ethylene glycol as a corrosion inhibitor during cleaning after metal chemical mechanical polishing
US6158447A (en) * 1997-09-09 2000-12-12 Tokyo Electron Limited Cleaning method and cleaning equipment
US5933739A (en) * 1997-09-11 1999-08-03 Vlsi Technology, Inc. Self-aligned silicidation structure and method of formation thereof
US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
JP3111979B2 (ja) 1998-05-20 2000-11-27 日本電気株式会社 ウエハの洗浄方法
US6037271A (en) * 1998-10-21 2000-03-14 Fsi International, Inc. Low haze wafer treatment process
US6352595B1 (en) * 1999-05-28 2002-03-05 Lam Research Corporation Method and system for cleaning a chemical mechanical polishing pad
US6443812B1 (en) * 1999-08-24 2002-09-03 Rodel Holdings Inc. Compositions for insulator and metal CMP and methods relating thereto
US6482749B1 (en) * 2000-08-10 2002-11-19 Seh America, Inc. Method for etching a wafer edge using a potassium-based chemical oxidizer in the presence of hydrofluoric acid
US6951221B2 (en) * 2000-09-22 2005-10-04 Dainippon Screen Mfg. Co., Ltd. Substrate processing apparatus
US6799589B2 (en) * 2000-11-08 2004-10-05 Sony Corporation Method and apparatus for wet-cleaning substrate
US6627550B2 (en) * 2001-03-27 2003-09-30 Micron Technology, Inc. Post-planarization clean-up
US6584989B2 (en) * 2001-04-17 2003-07-01 International Business Machines Corporation Apparatus and method for wet cleaning
KR20030052817A (ko) 2001-12-21 2003-06-27 동부전자 주식회사 반도체 소자용 게이트 산화막 전처리 방법
US6848455B1 (en) * 2002-04-22 2005-02-01 Novellus Systems, Inc. Method and apparatus for removing photoresist and post-etch residue from semiconductor substrates by in-situ generation of oxidizing species
US7384870B2 (en) * 2002-05-31 2008-06-10 Hoya Corporation Method for manufacturing glass substrate
KR20040007876A (ko) 2002-07-11 2004-01-28 주식회사 하이닉스반도체 반도체 소자 제조공정에서의 세정액 및 이를 이용한세정방법
JP4339561B2 (ja) 2002-08-16 2009-10-07 大日本スクリーン製造株式会社 基板処理装置および基板処理方法
JP2004158534A (ja) * 2002-11-05 2004-06-03 Kobe Steel Ltd 微細構造体の洗浄方法
US6641899B1 (en) * 2002-11-05 2003-11-04 International Business Machines Corporation Nonlithographic method to produce masks by selective reaction, articles produced, and composition for same
KR100505044B1 (ko) * 2002-12-17 2005-07-29 삼성전자주식회사 세정액 및 이를 이용한 반도체 장치의 세정방법
KR100639710B1 (ko) * 2005-03-17 2006-10-30 세메스 주식회사 약액 혼합 공급 방법
KR100655647B1 (ko) 2005-07-04 2006-12-08 삼성전자주식회사 반도체 기판용 세정액 조성물, 이의 제조 방법, 이를이용한 반도체 기판의 세정 방법 및 반도체 장치의 제조방법
JP2007134690A (ja) 2005-10-11 2007-05-31 Toshiba Corp 半導体装置の製造方法および半導体装置の製造に用いられる薬液
JP2007149891A (ja) 2005-11-25 2007-06-14 Dainippon Screen Mfg Co Ltd 基板処理装置および基板処理方法
KR100678482B1 (ko) * 2006-01-17 2007-02-02 삼성전자주식회사 실리콘 표면의 세정용액 및 이를 사용하는 반도체 소자의제조방법들
JP5168966B2 (ja) * 2007-03-20 2013-03-27 富士通セミコンダクター株式会社 研磨方法及び研磨装置
CN102623328B (zh) * 2007-05-18 2014-11-26 Fsi国际公司 用水蒸气或蒸汽处理基材的方法

Also Published As

Publication number Publication date
US7938911B2 (en) 2011-05-10
CN101337227A (zh) 2009-01-07
TWI388657B (zh) 2013-03-11
KR100992479B1 (ko) 2010-11-08
JP2009016833A (ja) 2009-01-22
US20090007940A1 (en) 2009-01-08
JP4889691B2 (ja) 2012-03-07
DE102007030957A1 (de) 2009-01-08
TW200902705A (en) 2009-01-16
KR20090004492A (ko) 2009-01-12
CN101337227B (zh) 2011-11-16

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