SG151169A1 - Process for cleaning a semiconductor wafer - Google Patents

Process for cleaning a semiconductor wafer

Info

Publication number
SG151169A1
SG151169A1 SG200806116-0A SG2008061160A SG151169A1 SG 151169 A1 SG151169 A1 SG 151169A1 SG 2008061160 A SG2008061160 A SG 2008061160A SG 151169 A1 SG151169 A1 SG 151169A1
Authority
SG
Singapore
Prior art keywords
liquid film
semiconductor wafer
cleaning
hydrogen fluoride
ozone
Prior art date
Application number
SG200806116-0A
Inventor
Thomas Buschhardt
Clemens Zapilko
Diego Feijoo
Gunter Schwab
Original Assignee
Siltronic Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siltronic Ag filed Critical Siltronic Ag
Publication of SG151169A1 publication Critical patent/SG151169A1/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02Inorganic compounds
    • C11D7/04Water-soluble compounds
    • C11D7/08Acids
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02043Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052Wet cleaning only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • CCHEMISTRY; METALLURGY
    • C11ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11DDETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10Objects to be cleaned
    • C11D2111/14Hard surfaces
    • C11D2111/22Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

Process for Cleaning a Semiconductor Wafer The invention relates to a process for cleaning a semiconductor wafer, comprising the formation of a first liquid film on a surface to be cleaned of the semiconductor wafer, the first liquid film containing hydrogen fluoride and ozone; replacement of the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removal of the second liquid film.
SG200806116-0A 2007-09-19 2008-08-18 Process for cleaning a semiconductor wafer SG151169A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102007044787A DE102007044787A1 (en) 2007-09-19 2007-09-19 Method for cleaning a semiconductor wafer

Publications (1)

Publication Number Publication Date
SG151169A1 true SG151169A1 (en) 2009-04-30

Family

ID=40384093

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200806116-0A SG151169A1 (en) 2007-09-19 2008-08-18 Process for cleaning a semiconductor wafer

Country Status (7)

Country Link
US (1) US20090071507A1 (en)
JP (1) JP2009076908A (en)
KR (1) KR20090030204A (en)
CN (1) CN101393863A (en)
DE (1) DE102007044787A1 (en)
SG (1) SG151169A1 (en)
TW (1) TW200915405A (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA3085086C (en) 2011-12-06 2023-08-08 Delta Faucet Company Ozone distribution in a faucet
JP5977727B2 (en) * 2013-11-13 2016-08-24 東京エレクトロン株式会社 Substrate cleaning method, substrate cleaning system, and storage medium
CN108463437B (en) 2015-12-21 2022-07-08 德尔塔阀门公司 Fluid delivery system comprising a disinfection device
CN107675263A (en) * 2017-09-15 2018-02-09 东方环晟光伏(江苏)有限公司 The optimization method of monocrystalline silicon pyramid structure matte

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2760418B2 (en) 1994-07-29 1998-05-28 住友シチックス株式会社 Semiconductor wafer cleaning solution and method for cleaning semiconductor wafer using the same
JP3575859B2 (en) * 1995-03-10 2004-10-13 株式会社東芝 Semiconductor substrate surface treatment method and surface treatment device
US6701941B1 (en) 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US20020064961A1 (en) 2000-06-26 2002-05-30 Applied Materials, Inc. Method and apparatus for dissolving a gas into a liquid for single wet wafer processing
DE10036691A1 (en) * 2000-07-27 2002-02-14 Wacker Siltronic Halbleitermat Process for the chemical treatment of semiconductor wafers
US6989358B2 (en) * 2002-10-31 2006-01-24 Advanced Technology Materials, Inc. Supercritical carbon dioxide/chemical formulation for removal of photoresists
JP4498893B2 (en) * 2004-11-11 2010-07-07 大日本スクリーン製造株式会社 Substrate processing method and substrate processing apparatus
US7432177B2 (en) * 2005-06-15 2008-10-07 Applied Materials, Inc. Post-ion implant cleaning for silicon on insulator substrate preparation

Also Published As

Publication number Publication date
DE102007044787A1 (en) 2009-04-02
CN101393863A (en) 2009-03-25
TW200915405A (en) 2009-04-01
KR20090030204A (en) 2009-03-24
JP2009076908A (en) 2009-04-09
US20090071507A1 (en) 2009-03-19

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