CN101393863A - Process for cleaning a semiconductor wafer - Google Patents
Process for cleaning a semiconductor wafer Download PDFInfo
- Publication number
- CN101393863A CN101393863A CNA2008102151227A CN200810215122A CN101393863A CN 101393863 A CN101393863 A CN 101393863A CN A2008102151227 A CNA2008102151227 A CN A2008102151227A CN 200810215122 A CN200810215122 A CN 200810215122A CN 101393863 A CN101393863 A CN 101393863A
- Authority
- CN
- China
- Prior art keywords
- fluid film
- semiconductor wafer
- concentration
- hydrogen fluoride
- cleaning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004140 cleaning Methods 0.000 title claims description 45
- 238000000034 method Methods 0.000 title claims description 29
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 16
- 239000012530 fluid Substances 0.000 claims description 48
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 7
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 6
- 239000012498 ultrapure water Substances 0.000 claims description 6
- 238000007599 discharging Methods 0.000 claims description 2
- 238000009736 wetting Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 235000012431 wafers Nutrition 0.000 abstract description 41
- 239000010408 film Substances 0.000 description 28
- 239000000243 solution Substances 0.000 description 12
- 239000002245 particle Substances 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000003344 environmental pollutant Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 231100000719 pollutant Toxicity 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007767 bonding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 230000009931 harmful effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- C11D2111/22—
Abstract
Semiconductor wafers are cleaned by forming a first liquid film on a surface of the semiconductor wafer to be cleaned, the first liquid film containing hydrogen fluoride and ozone; replacing the first liquid film with a second aqueous liquid film which contains hydrogen fluoride and ozone, the concentration of hydrogen fluoride in the second liquid film being lower than in the first liquid film; and removing the second liquid film.
Description
Invention field
The present invention relates to the method with liquid, aqueous film clean semiconductor wafer, this fluid film comprises hydrogen fluoride and ozone.
Background technology
Making the required semiconductor wafer of electronic component must cleaned at regular intervals particle and metal pollutant.This cleaning is for the manufacturer of electronic component and for its supplier, and promptly the producer of semiconductor wafer is conventional.
Contain hydrogen fluoride (HF) and ozone (O
3) the aqueous solution proved the effective cleaning agent.US5759971 has described a kind of clean method, and wherein a plurality of semiconductor wafers are immersed in the water-bath simultaneously, and this water-bath contains concentration to be the hydrogen fluoride of 0.03-0.05 weight % and to be dissolved to saturated ozone.Modernism is designed to single-wafer processing, especially because this makes that the consumption of cleaning solution is lower.In the method, cleaning solution is administered to fluid film on the surface or two surfaces of described semiconductor wafer.US 7037842 B2 have described a kind of method, and wherein spray with aqueous cleaning liquid the side of Xuan Zhuan semiconductor wafer, and this aqueous cleaning liquid comprises hydrogen fluoride and ozone.
For economic reasons, need make the clean cycle time short as far as possible, promptly realize the production capacity of the highest possible semiconductor wafer.The conflicting fact of purpose is therewith, and usually cleaning is just correspondingly more complete when longer in the time of carrying out.A kind of obvious solution to this problem it is contemplated that into increasing the concentration of component hydrogen fluoride and ozone, to bring into play cleaning action as possible.But the shortcoming of this strategy is to increase the etching action that hydrofluoric concentration also can increase this component, and it is undesirable coarse that this will cause the clean surface to produce.The purpose of this invention is to provide a kind of method, it can have short circulation timei and effective cleaning, and can increase surface roughness acceptably.
Summary of the invention
This purpose realizes by a kind of method of clean semiconductor wafer, and this method is included on the surface of semiconductor wafer to be cleaned and forms the first moisture fluid film, and described first fluid film comprises hydrogen fluoride and ozone; Replace described first fluid film with the second moisture fluid film that comprises hydrogen fluoride and ozone, the concentration of hydrogen fluoride in described second fluid film is lower than its concentration in first fluid film; And remove described second fluid film.
The advantage of this method is significantly, particularly with regard to the cleaning of the semiconductor silicon wafer that also do not prepared semiconductor element.This semiconductor wafer normally cleans after polishing, heat treatment, or cleans after epitaxial deposition.The etching action of cleaning solution can expose COP (being derived from the particle of crystal) defective and oxygen precipitate (BMD, this bulky micro defect).These defectives are scattered the optical measuring instrument detection and are particle, and they are reasons that surface roughness increases.The present invention can limit this harmful effect, but has still kept finishing fast of cleaning.
Clean method of the present invention is based on the notion of the single-wafer processing of rotation semiconductor wafer, it comprises two cleaning stages, the main difference of described cleaning stage is the hydrogen fluoride concentration in the cleaning solution, and the hydrogen fluoride concentration in the cleaning solution of phase I is than the height in the cleaning solution of subsequent stage.The surface of phase I from semiconductor wafer to be cleaned forms the extension of first fluid film, replaced by second fluid film until first fluid film.Second stage continues to by semiconductor wafer surface to be cleaned from this moment and removes second fluid film.Two stages preferably continue respectively to be no more than for 60 seconds, especially preferably are no more than for 30 seconds respectively, so that cleaning of the present invention can preferably be no more than for 120 seconds, especially preferably be no more than in 60 seconds and carry out.
Conversion from first cleaning stage to second cleaning stage is preferably undertaken by discharging (displace) first fluid film with second fluid film, and described semiconductor wafer surface to be cleaned keeps constantly wetting by liquid during this period.
The thickness of first and second fluid films is controlled around the speed that rotating shaft rotates by semiconductor wafer, and this rotating shaft is vertically intersected on the center on surface to be cleaned.Rotary speed is preferably 100-2000rpm.The scope of 200-500rpm is for preferred especially.Velocity of rotation in first cleaning stage can be different with the velocity of rotation in second cleaning stage.Selected speed is preferably in described cleaning stage constant in first cleaning stage.Because the rotation of semiconductor wafer is together flowed out at the edge of semiconductor wafer with the cleaning solution of crossing and the pollutant of particle and dissolving.The cleaning solution of Liu Shiing comes Continuous Compensation by the fresh liquid that replenishes respective amount through one or more nozzles to semiconductor wafer surface to be cleaned in view of the above.
First cleaning stage is by means of the hydrogen fluoride of relative high concentration basically, dissolves the oxide on surface of primary (native) apace, and the possible polishing agent residue that contains Ludox.The bonding agent substrate that is used for insoluble granule is also removed whereby, they is washed from the surface of semiconductor wafer so that can continue.Second stage is to be used for keeping this washing process under the condition that promotes basically, makes the material corrosion minimum that etching because of semi-conducting material produces simultaneously.
In first fluid film, hydrofluoric concentration is preferably 0.1-10 weight %, in its scope particularly preferably in 0.1-2.0 weight %.In second fluid film, hydrofluoric concentration is preferably 0.001-0.1 weight %, in its scope particularly preferably in 0.02-0.05 weight %.The concentration of ozone can be identical in two kinds of fluid films, perhaps can be than low in first fluid film in second fluid film.But, under any circumstance all should be chosen as enough height, so that can stay hydrophilic wafer surface.When fluid film was applied on the semiconductor wafer, ozone can be included in the cleaning solution.But preferable methods is to carry by the diffusion drive ejector half, from making fluid film be rich in ozone the gas phase on every side.This method for example is described among US 2002/0050279 A1.In this case, ozone is used as with the mixture of oxygen and introduces in the process chamber (process chamber).The concentration of ozone in oxygen is preferably 3-20 weight %.
In addition preferably, first and/or second fluid film contains the hydrogen chloride that concentration is 0.2-2.0 weight % (HCl).This adding can promote for example removal of the ion of metallic copper, iron and nickel of metal pollutant.
Described first and second fluid films preferably are under the room temperature (25 ℃).But this temperature can be higher or lower than this, and it can be up to 95 ℃.The temperature of this first and second fluid film can be identical or different.
Second fluid film preferably can by with washing agent with its discharge, ultra-pure water for example, described ultra-pure water contains ozone, SCl solution or watery hydrochloric acid.Semiconductor wafer can be at subsequent drying, and for example under high rotary speed, washing agent is revolved to get rid of remove by flowing into nitrogen, or by implementing to be called the dry drying means of Marangoni (Marangoni).
Embodiment
Embodiment
After chemical-mechanical polishing (CMP) diameter is the semiconductor silicon wafer of 300mm, it is cleaned.Coarse polishing agent residue is removed by means of cylinder (roller) in advance.Average-size is detected on the polished surface of pretreated semiconductor wafer according to said method greater than 200-500 the particle of 65nm.The method according to this invention, in these semiconductor wafers some with containing HF and O
3Cleaning solution carry out two stage cleanings.In first cleaning stage, in single-wafer processing equipment, use and contain the polished surface that concentration is the hydrofluoric aqueous solution sprinkling semiconductor wafer of 0.1 weight %.Simultaneously, make and have 230g ozone/Nm
3The mixture of oxygen/ozone (stp) is by the gas compartment of described equipment.The ozone liquid body thin film that contains that has concentration and be the HF of 0.1 weight % forms on the semiconductor wafer surface of handling with the method.After 30 seconds, be that the hydrofluoric aqueous solution of 0.05 weight % sprays semiconductor wafer in second cleaning stage with containing concentration.The supply of ozone is without any variation, forms on polished surface so that HF concentration is the ozone liquid body thin film that contains of 0.05 weight %.After other 30 seconds, wash the semiconductor wafer that this cleaning is crossed with ultra-pure water, and dry.Whole cleaning (first and second cleaning stages) continued for 60 seconds, and was undertaken by rotating described semiconductor wafer with constant speed 300rpm.
For comparing, in identical equipment, only carried out a stage cleaning to carrying out pretreated as mentioned above semiconductor wafer.The polished surface of semiconductor wafer to be cleaned is with containing the hydrofluoric aqueous solution sprinkling that concentration is 0.05 weight %.Simultaneously, make and have 230g ozone/Nm
3(stp) ozone/oxygen mixture is by the gas compartment of described equipment.HF concentration is that the ozone liquid body thin film that contains of 0.05 weight % forms on the surface of the semiconductor wafer of handling with the method.During this cleaning, semiconductor wafer is with the constant speed rotation of 300rpm.After 60 seconds, wash the semiconductor wafer that this cleaning is crossed with ultra-pure water, and dry.For some semiconductor wafer, the duration of cleaning extended to for 240 seconds, and for other, hydrofluoric concentration then increases to 0.1 weight %.
The effect that detects cleaning shows that on the semiconductor wafer that the method according to this invention cleans, the particle of finding on average lacks 80% after described cleaning.And a stage cleaning has 45% particle to be removed under best-case.The effect that prolongs cleaning time is can to increase because of etching action by detected numbers of particles, thereby reduced cleaning efficiency.
Claims (9)
1. the method that is used for clean semiconductor wafer, it is included in and forms the first moisture fluid film on the surface of semiconductor wafer to be cleaned, and described first fluid film comprises hydrogen fluoride and ozone; Replace described first fluid film with the second moisture fluid film that comprises hydrogen fluoride and ozone, the concentration of hydrogen fluoride in described second fluid film is lower than the concentration of hydrogen fluoride in first fluid film; And remove described second fluid film.
2. the method for claim 1, it is characterized in that from the formation of first fluid film up to the time of removing second fluid film for being no more than 120 seconds.
3. claim 1 or 2 method, it is characterized in that from the formation of first fluid film up to the time of replacing first fluid film with second fluid film for being no more than 60 seconds.
4. the method for one of claim 1-3 is characterized in that the concentration of hydrogen fluoride in first fluid film is 0.1-10 weight %.
5. the method for one of claim 1-4 is characterized in that the concentration of hydrogen fluoride in second fluid film is 0.001-0.1 weight %.
6. the method for one of claim 1-5, it is characterized in that described first fluid film is undertaken by discharging first fluid film with second fluid film by the replacement of second fluid film, and the surface of described semiconductor wafer to be cleaned keeps constantly wetting by liquid during this period.
7. the method for one of claim 1-6 is characterized in that the speed rotation with 100-2000rpm during cleaning of described semiconductor wafer.
8. the method for one of claim 1-7 is characterized in that described first or second fluid film, or these two kinds of fluid films contain the HCl that concentration is 0.2-2.0 weight %.
9. the method for one of claim 1-8 is characterized in that with ultra-pure water described second fluid film being discharged, and described ultra-pure water contains ozone, SCl solution or watery hydrochloric acid.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007044787A DE102007044787A1 (en) | 2007-09-19 | 2007-09-19 | Method for cleaning a semiconductor wafer |
| DE102007044787.8 | 2007-09-19 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101393863A true CN101393863A (en) | 2009-03-25 |
Family
ID=40384093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA2008102151227A Pending CN101393863A (en) | 2007-09-19 | 2008-09-01 | Process for cleaning a semiconductor wafer |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090071507A1 (en) |
| JP (1) | JP2009076908A (en) |
| KR (1) | KR20090030204A (en) |
| CN (1) | CN101393863A (en) |
| DE (1) | DE102007044787A1 (en) |
| SG (1) | SG151169A1 (en) |
| TW (1) | TW200915405A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104624561A (en) * | 2013-11-13 | 2015-05-20 | 东京毅力科创株式会社 | Substrate cleaning method and substrate cleaning system |
| CN107675263A (en) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏（江苏）有限公司 | The optimization method of monocrystalline silicon pyramid structure matte |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA2856196C (en) | 2011-12-06 | 2020-09-01 | Masco Corporation Of Indiana | Ozone distribution in a faucet |
| US11458214B2 (en) | 2015-12-21 | 2022-10-04 | Delta Faucet Company | Fluid delivery system including a disinfectant device |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2760418B2 (en) | 1994-07-29 | 1998-05-28 | 住友シチックス株式会社 | Semiconductor wafer cleaning solution and method for cleaning semiconductor wafer using the same |
| JP3575859B2 (en) * | 1995-03-10 | 2004-10-13 | 株式会社東芝 | Semiconductor substrate surface treatment method and surface treatment device |
| US6701941B1 (en) | 1997-05-09 | 2004-03-09 | Semitool, Inc. | Method for treating the surface of a workpiece |
| US20020064961A1 (en) | 2000-06-26 | 2002-05-30 | Applied Materials, Inc. | Method and apparatus for dissolving a gas into a liquid for single wet wafer processing |
| DE10036691A1 (en) * | 2000-07-27 | 2002-02-14 | Wacker Siltronic Halbleitermat | Process for the chemical treatment of semiconductor wafers |
| US6989358B2 (en) * | 2002-10-31 | 2006-01-24 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
| JP4498893B2 (en) * | 2004-11-11 | 2010-07-07 | 大日本スクリーン製造株式会社 | Substrate processing method and substrate processing apparatus |
| US7432177B2 (en) * | 2005-06-15 | 2008-10-07 | Applied Materials, Inc. | Post-ion implant cleaning for silicon on insulator substrate preparation |
-
2007
- 2007-09-19 DE DE102007044787A patent/DE102007044787A1/en not_active Ceased
-
2008
- 2008-07-30 KR KR1020080074518A patent/KR20090030204A/en not_active Application Discontinuation
- 2008-08-18 SG SG200806116-0A patent/SG151169A1/en unknown
- 2008-08-27 US US12/199,124 patent/US20090071507A1/en not_active Abandoned
- 2008-09-01 CN CNA2008102151227A patent/CN101393863A/en active Pending
- 2008-09-10 TW TW097134681A patent/TW200915405A/en unknown
- 2008-09-17 JP JP2008237873A patent/JP2009076908A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104624561A (en) * | 2013-11-13 | 2015-05-20 | 东京毅力科创株式会社 | Substrate cleaning method and substrate cleaning system |
| CN107675263A (en) * | 2017-09-15 | 2018-02-09 | 东方环晟光伏（江苏）有限公司 | The optimization method of monocrystalline silicon pyramid structure matte |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009076908A (en) | 2009-04-09 |
| KR20090030204A (en) | 2009-03-24 |
| US20090071507A1 (en) | 2009-03-19 |
| SG151169A1 (en) | 2009-04-30 |
| TW200915405A (en) | 2009-04-01 |
| DE102007044787A1 (en) | 2009-04-02 |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
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| AD01 | Patent right deemed abandoned |
Effective date of abandoning: 20090325 |
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| C20 | Patent right or utility model deemed to be abandoned or is abandoned |