SG144121A1 - Nitride semiconductor substrate and manufacturing method thereof - Google Patents
Nitride semiconductor substrate and manufacturing method thereofInfo
- Publication number
- SG144121A1 SG144121A1 SG200719023-4A SG2007190234A SG144121A1 SG 144121 A1 SG144121 A1 SG 144121A1 SG 2007190234 A SG2007190234 A SG 2007190234A SG 144121 A1 SG144121 A1 SG 144121A1
- Authority
- SG
- Singapore
- Prior art keywords
- nitride semiconductor
- manufacturing
- base substrate
- semiconductor substrate
- substrate
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 9
- 150000004767 nitrides Chemical class 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000002093 peripheral effect Effects 0.000 abstract 2
- 229910002601 GaN Inorganic materials 0.000 abstract 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000011295 pitch Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02658—Pretreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02428—Structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020060129128A KR100941305B1 (ko) | 2006-12-18 | 2006-12-18 | 질화물 반도체 기판 및 그 제조 방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG144121A1 true SG144121A1 (en) | 2008-07-29 |
Family
ID=39092778
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG200719023-4A SG144121A1 (en) | 2006-12-18 | 2007-12-18 | Nitride semiconductor substrate and manufacturing method thereof |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US7915698B2 (fr) |
| EP (1) | EP1936668B1 (fr) |
| JP (1) | JP4741572B2 (fr) |
| KR (1) | KR100941305B1 (fr) |
| CN (1) | CN101207174B (fr) |
| SG (1) | SG144121A1 (fr) |
Families Citing this family (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20160076168A1 (en) * | 2006-04-07 | 2016-03-17 | Sixpoint Materials, Inc. | Substrates for growing group iii nitride crystals and their fabrication method |
| US8664747B2 (en) * | 2008-04-28 | 2014-03-04 | Toshiba Techno Center Inc. | Trenched substrate for crystal growth and wafer bonding |
| US8242008B2 (en) * | 2009-05-18 | 2012-08-14 | Micron Technology, Inc. | Methods of removing noble metal-containing nanoparticles, methods of forming NAND string gates, and methods of forming integrated circuitry |
| CN102339798B (zh) * | 2010-07-22 | 2014-11-05 | 展晶科技(深圳)有限公司 | 复合式基板、氮化镓基元件及氮化镓基元件的制造方法 |
| US10707082B2 (en) | 2011-07-06 | 2020-07-07 | Asm International N.V. | Methods for depositing thin films comprising indium nitride by atomic layer deposition |
| CN103094443A (zh) * | 2011-11-03 | 2013-05-08 | 亚威朗光电(中国)有限公司 | 图形生长衬底 |
| CN103137434B (zh) * | 2011-11-23 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 硅基GaN薄膜的制造方法 |
| CN103078028A (zh) * | 2011-12-09 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | 衬底、衬底的制作方法和使用方法 |
| KR102076519B1 (ko) * | 2013-08-19 | 2020-02-12 | 엘지디스플레이 주식회사 | 플렉서블 표시장치 및 그 제조 방법 |
| US9553126B2 (en) * | 2014-05-05 | 2017-01-24 | Omnivision Technologies, Inc. | Wafer-level bonding method for camera fabrication |
| WO2016040533A1 (fr) * | 2014-09-11 | 2016-03-17 | Sixpoint Materials, Inc. | Substrats de croissance de cristaux de nitrure du groupe iii et leur procédé de fabrication |
| US9362332B1 (en) * | 2014-11-14 | 2016-06-07 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for semiconductor selective etching and BSI image sensor |
| CN104681415A (zh) * | 2015-03-11 | 2015-06-03 | 华进半导体封装先导技术研发中心有限公司 | 一种超薄硅基板的制作工艺和结构 |
| US10283595B2 (en) * | 2015-04-10 | 2019-05-07 | Panasonic Corporation | Silicon carbide semiconductor substrate used to form semiconductor epitaxial layer thereon |
| CN107635453B (zh) * | 2015-06-22 | 2019-07-26 | 奥林巴斯株式会社 | 内窥镜用摄像装置 |
| CN105514244A (zh) * | 2015-12-15 | 2016-04-20 | 天津三安光电有限公司 | 一种发光二极管结构 |
| JP6862154B2 (ja) * | 2016-11-22 | 2021-04-21 | キヤノン株式会社 | 光学素子、露光装置、および物品の製造方法 |
| KR102562658B1 (ko) * | 2017-02-20 | 2023-08-01 | 한국전기연구원 | 반도체 웨이퍼 시닝 방법 |
| FR3071099A1 (fr) * | 2017-09-12 | 2019-03-15 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Substrat structure pour la fabrication de composants de puissance |
| CN107785244A (zh) * | 2017-09-27 | 2018-03-09 | 厦门三安光电有限公司 | 一种半导体外延生长方法及其石墨承载盘 |
| CN111082307B (zh) * | 2019-12-31 | 2021-07-06 | 长春理工大学 | 一种低应力高导热半导体衬底及其制备方法 |
| CN116799038A (zh) * | 2021-06-28 | 2023-09-22 | 厦门市三安集成电路有限公司 | 一种外延结构及其制备方法 |
| CN115527837B (zh) * | 2022-09-29 | 2023-06-02 | 松山湖材料实验室 | 氮化铝复合衬底的制备方法 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58138033A (ja) * | 1982-02-10 | 1983-08-16 | Toshiba Corp | 半導体基板及び半導体装置の製造方法 |
| JPH07277884A (ja) * | 1994-04-05 | 1995-10-24 | Mitsubishi Cable Ind Ltd | 半導体用単結晶の製造方法 |
| CA2231625C (fr) | 1997-03-17 | 2002-04-02 | Canon Kabushiki Kaisha | Substrat semiconducteur constitue d'une couche d'un compose semiconducteur, procede de fabrication connexe, et dispositif electronique fabrique sur ce substrat semiconducteur |
| JP3542491B2 (ja) * | 1997-03-17 | 2004-07-14 | キヤノン株式会社 | 化合物半導体層を有する半導体基板とその作製方法及び該半導体基板に作製された電子デバイス |
| US6015979A (en) * | 1997-08-29 | 2000-01-18 | Kabushiki Kaisha Toshiba | Nitride-based semiconductor element and method for manufacturing the same |
| KR100519326B1 (ko) * | 1999-04-20 | 2005-10-07 | 엘지전자 주식회사 | 질화갈륨 반도체 레이저 다이오드의 기판 제조방법 |
| JP4233894B2 (ja) * | 2003-03-12 | 2009-03-04 | 日鉱金属株式会社 | 半導体単結晶の製造方法 |
| US7229499B2 (en) * | 2003-08-22 | 2007-06-12 | Matsushita Electric Industrial Co., Ltd. | Manufacturing method for semiconductor device, semiconductor device and semiconductor wafer |
| JP2005298245A (ja) * | 2004-04-08 | 2005-10-27 | Kobe Steel Ltd | 単結晶基板 |
| JP2005298254A (ja) | 2004-04-09 | 2005-10-27 | Hitachi Cable Ltd | 化合物半導体単結晶成長用容器及びそれを用いた化合物半導体単結晶の製造方法 |
| KR20060030636A (ko) * | 2004-10-06 | 2006-04-11 | 주식회사 이츠웰 | 질화물 반도체 성장용 사파이어 기판과 그 제조 방법. |
| JP2006179511A (ja) * | 2004-12-20 | 2006-07-06 | Sumitomo Electric Ind Ltd | 発光装置 |
-
2006
- 2006-12-18 KR KR1020060129128A patent/KR100941305B1/ko active IP Right Grant
-
2007
- 2007-12-11 EP EP07122820A patent/EP1936668B1/fr not_active Expired - Fee Related
- 2007-12-14 JP JP2007323451A patent/JP4741572B2/ja not_active Expired - Fee Related
- 2007-12-14 US US12/002,338 patent/US7915698B2/en not_active Expired - Fee Related
- 2007-12-17 CN CN2007101953851A patent/CN101207174B/zh not_active Expired - Fee Related
- 2007-12-18 SG SG200719023-4A patent/SG144121A1/en unknown
-
2011
- 2011-02-21 US US13/031,425 patent/US8138003B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008150284A (ja) | 2008-07-03 |
| US20080142846A1 (en) | 2008-06-19 |
| US7915698B2 (en) | 2011-03-29 |
| US8138003B2 (en) | 2012-03-20 |
| CN101207174B (zh) | 2010-10-06 |
| KR20080056347A (ko) | 2008-06-23 |
| KR100941305B1 (ko) | 2010-02-11 |
| JP4741572B2 (ja) | 2011-08-03 |
| EP1936668B1 (fr) | 2013-03-27 |
| CN101207174A (zh) | 2008-06-25 |
| EP1936668A2 (fr) | 2008-06-25 |
| EP1936668A3 (fr) | 2011-10-05 |
| US20110143525A1 (en) | 2011-06-16 |
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