SG122742A1 - Substrate processing unit - Google Patents
Substrate processing unitInfo
- Publication number
- SG122742A1 SG122742A1 SG200104981A SG200104981A SG122742A1 SG 122742 A1 SG122742 A1 SG 122742A1 SG 200104981 A SG200104981 A SG 200104981A SG 200104981 A SG200104981 A SG 200104981A SG 122742 A1 SG122742 A1 SG 122742A1
- Authority
- SG
- Singapore
- Prior art keywords
- processing unit
- substrate processing
- substrate
- unit
- processing
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000377785A JP4602540B2 (ja) | 2000-12-12 | 2000-12-12 | 基板処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG122742A1 true SG122742A1 (en) | 2006-06-29 |
Family
ID=18846456
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200104981A SG122742A1 (en) | 2000-12-12 | 2001-08-17 | Substrate processing unit |
Country Status (8)
Country | Link |
---|---|
US (1) | US6637445B2 (zh) |
EP (1) | EP1215715A3 (zh) |
JP (1) | JP4602540B2 (zh) |
KR (1) | KR100804911B1 (zh) |
CN (1) | CN1194392C (zh) |
IL (1) | IL145001A0 (zh) |
SG (1) | SG122742A1 (zh) |
TW (1) | TW502332B (zh) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100513397B1 (ko) * | 2001-01-12 | 2005-09-09 | 삼성전자주식회사 | 반도체 웨이퍼 세정시스템 및 그 세정액 공급방법 |
JP4011900B2 (ja) * | 2001-12-04 | 2007-11-21 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US20030136429A1 (en) * | 2002-01-22 | 2003-07-24 | Semitool, Inc. | Vapor cleaning and liquid rinsing process vessel |
US7140374B2 (en) * | 2003-03-14 | 2006-11-28 | Lam Research Corporation | System, method and apparatus for self-cleaning dry etch |
JP2006066727A (ja) * | 2004-08-27 | 2006-03-09 | Toshiba Corp | 半導体製造装置及び薬液交換方法 |
US20060157197A1 (en) * | 2005-01-18 | 2006-07-20 | Tadashi Maegawa | Substrate processing apparatus |
KR100712733B1 (ko) * | 2005-12-21 | 2007-05-04 | 주식회사 실트론 | 산화막 제조 장치 및 그 방법 |
US20080169007A1 (en) * | 2006-05-30 | 2008-07-17 | Ismail Kashkoush | Apparatus and method for processing a hydrophobic surface of a substrate |
JP4767767B2 (ja) * | 2006-06-19 | 2011-09-07 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4762822B2 (ja) | 2006-08-03 | 2011-08-31 | 東京エレクトロン株式会社 | 薬液混合方法および薬液混合装置 |
JP4302131B2 (ja) * | 2006-09-26 | 2009-07-22 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法及び、ウエットエッチング処理装置 |
US8474468B2 (en) * | 2006-09-30 | 2013-07-02 | Tokyo Electron Limited | Apparatus and method for thermally processing a substrate with a heated liquid |
JP4960075B2 (ja) * | 2006-12-18 | 2012-06-27 | 大日本スクリーン製造株式会社 | 基板処理方法および基板処理装置 |
JP4803821B2 (ja) * | 2007-03-23 | 2011-10-26 | 大日本スクリーン製造株式会社 | 基板処理装置 |
US20080236639A1 (en) | 2007-03-27 | 2008-10-02 | Masahiro Kimura | Substrate treating apparatus |
US9383138B2 (en) * | 2007-03-30 | 2016-07-05 | Tokyo Electron Limited | Methods and heat treatment apparatus for uniformly heating a substrate during a bake process |
US20080241400A1 (en) * | 2007-03-31 | 2008-10-02 | Tokyo Electron Limited | Vacuum assist method and system for reducing intermixing of lithography layers |
KR20120034948A (ko) * | 2010-10-04 | 2012-04-13 | 삼성전자주식회사 | 기판 건조 장치 및 이를 이용한 기판 건조 방법 |
US8926788B2 (en) * | 2010-10-27 | 2015-01-06 | Lam Research Ag | Closed chamber for wafer wet processing |
JP5994239B2 (ja) * | 2011-11-29 | 2016-09-21 | 栗田工業株式会社 | 洗浄装置及び方法 |
JP6513361B2 (ja) | 2014-09-30 | 2019-05-15 | 株式会社Screenホールディングス | 基板処理方法 |
CN105826221B (zh) * | 2016-03-22 | 2019-02-12 | 北京华林嘉业科技有限公司 | 一种基板干燥方法和实现该方法的装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153475A (ja) * | 1995-09-27 | 1997-06-10 | Komatsu Ltd | 半導体洗浄乾燥方法および半導体洗浄乾燥装置 |
US5803980A (en) * | 1996-10-04 | 1998-09-08 | Texas Instruments Incorporated | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue |
JPH11344286A (ja) * | 1998-06-01 | 1999-12-14 | Daikin Ind Ltd | 基板乾燥方法 |
JPH11351747A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | イソプロピルアルコール蒸気洗浄乾燥装置 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4984597B1 (en) * | 1984-05-21 | 1999-10-26 | Cfmt Inc | Apparatus for rinsing and drying surfaces |
US4795497A (en) * | 1985-08-13 | 1989-01-03 | Mcconnell Christopher F | Method and system for fluid treatment of semiconductor wafers |
US4746397A (en) * | 1986-01-17 | 1988-05-24 | Matsushita Electric Industrial Co., Ltd. | Treatment method for plate-shaped substrate |
JPS63244624A (ja) * | 1987-03-30 | 1988-10-12 | Nec Corp | シリコン基板の処理方法 |
US5129955A (en) * | 1989-01-11 | 1992-07-14 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method |
JPH069195B2 (ja) * | 1989-05-06 | 1994-02-02 | 大日本スクリーン製造株式会社 | 基板の表面処理方法 |
JPH06310484A (ja) * | 1993-04-20 | 1994-11-04 | Dainippon Screen Mfg Co Ltd | 基板の純水引上げ乾燥方法 |
WO1995004372A1 (en) * | 1993-07-30 | 1995-02-09 | Semitool, Inc. | Methods for processing semiconductors to reduce surface particles |
DE4413077C2 (de) * | 1994-04-15 | 1997-02-06 | Steag Micro Tech Gmbh | Verfahren und Vorrichtung zur chemischen Behandlung von Substraten |
US5772784A (en) * | 1994-11-14 | 1998-06-30 | Yieldup International | Ultra-low particle semiconductor cleaner |
JPH08172068A (ja) * | 1994-12-19 | 1996-07-02 | Fujitsu Ltd | 半導体基板の洗浄方法及び半導体装置の製造方法 |
US5714203A (en) * | 1995-08-23 | 1998-02-03 | Ictop Entwicklungs Gmbh | Procedure for the drying of silicon |
JP3545531B2 (ja) * | 1996-03-01 | 2004-07-21 | 東京エレクトロン株式会社 | 処理装置および処理方法 |
JP3127357B2 (ja) * | 1996-07-05 | 2001-01-22 | 東京エレクトロン株式会社 | 乾燥処理装置及び乾燥処理方法 |
US6058945A (en) * | 1996-05-28 | 2000-05-09 | Canon Kabushiki Kaisha | Cleaning methods of porous surface and semiconductor surface |
JP3643218B2 (ja) * | 1997-08-13 | 2005-04-27 | 大日本スクリーン製造株式会社 | 基板処理方法、その処理装置及び処理プログラムが記録されたコンピュータ読み取り可能な記録媒体 |
JP3177736B2 (ja) * | 1997-09-17 | 2001-06-18 | 東京エレクトロン株式会社 | 処理装置 |
JP3557599B2 (ja) * | 1998-08-07 | 2004-08-25 | 東京エレクトロン株式会社 | 蒸気処理装置 |
-
2000
- 2000-12-12 JP JP2000377785A patent/JP4602540B2/ja not_active Expired - Lifetime
-
2001
- 2001-08-17 SG SG200104981A patent/SG122742A1/en unknown
- 2001-08-20 IL IL14500101A patent/IL145001A0/xx not_active IP Right Cessation
- 2001-08-21 KR KR1020010050196A patent/KR100804911B1/ko not_active IP Right Cessation
- 2001-08-23 EP EP01120274A patent/EP1215715A3/en not_active Withdrawn
- 2001-08-29 US US09/940,859 patent/US6637445B2/en not_active Expired - Fee Related
- 2001-08-30 CN CNB011308710A patent/CN1194392C/zh not_active Expired - Fee Related
- 2001-08-30 TW TW090121431A patent/TW502332B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09153475A (ja) * | 1995-09-27 | 1997-06-10 | Komatsu Ltd | 半導体洗浄乾燥方法および半導体洗浄乾燥装置 |
US5803980A (en) * | 1996-10-04 | 1998-09-08 | Texas Instruments Incorporated | De-ionized water/ozone rinse post-hydrofluoric processing for the prevention of silicic acid residue |
JPH11344286A (ja) * | 1998-06-01 | 1999-12-14 | Daikin Ind Ltd | 基板乾燥方法 |
JPH11351747A (ja) * | 1998-06-12 | 1999-12-24 | Sharp Corp | イソプロピルアルコール蒸気洗浄乾燥装置 |
Also Published As
Publication number | Publication date |
---|---|
EP1215715A2 (en) | 2002-06-19 |
US20020108642A1 (en) | 2002-08-15 |
KR100804911B1 (ko) | 2008-02-20 |
US6637445B2 (en) | 2003-10-28 |
EP1215715A3 (en) | 2006-06-28 |
IL145001A0 (en) | 2002-06-30 |
TW502332B (en) | 2002-09-11 |
CN1194392C (zh) | 2005-03-23 |
JP4602540B2 (ja) | 2010-12-22 |
JP2002184747A (ja) | 2002-06-28 |
KR20020046140A (ko) | 2002-06-20 |
CN1359142A (zh) | 2002-07-17 |
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