SG115733A1 - Thin film transistor, semiconductor device, and method for manufacturing the same - Google Patents
Thin film transistor, semiconductor device, and method for manufacturing the sameInfo
- Publication number
- SG115733A1 SG115733A1 SG200501171A SG200501171A SG115733A1 SG 115733 A1 SG115733 A1 SG 115733A1 SG 200501171 A SG200501171 A SG 200501171A SG 200501171 A SG200501171 A SG 200501171A SG 115733 A1 SG115733 A1 SG 115733A1
- Authority
- SG
- Singapore
- Prior art keywords
- thin film
- current flows
- gate electrodes
- semiconductor device
- semiconductor element
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 7
- 239000010409 thin film Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/1296—Multistep manufacturing methods adapted to increase the uniformity of device parameters
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Electroluminescent Light Sources (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004071793 | 2004-03-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG115733A1 true SG115733A1 (en) | 2005-10-28 |
Family
ID=34918598
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200501171A SG115733A1 (en) | 2004-03-12 | 2005-02-21 | Thin film transistor, semiconductor device, and method for manufacturing the same |
Country Status (4)
Country | Link |
---|---|
US (3) | US7465958B2 (zh) |
JP (1) | JP5542262B2 (zh) |
CN (1) | CN100511712C (zh) |
SG (1) | SG115733A1 (zh) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6753654B2 (en) * | 2001-02-21 | 2004-06-22 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and electronic appliance |
US7858451B2 (en) * | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
JP4876548B2 (ja) * | 2005-11-22 | 2012-02-15 | セイコーエプソン株式会社 | 電気光学装置の製造方法 |
TWI834568B (zh) | 2006-09-29 | 2024-03-01 | 日商半導體能源研究所股份有限公司 | 半導體裝置 |
TWI336927B (en) * | 2007-04-27 | 2011-02-01 | Nanya Technology Corp | Method for forming semiconductor device with single sided buried strap |
US7738050B2 (en) * | 2007-07-06 | 2010-06-15 | Semiconductor Energy Laboratory Co., Ltd | Liquid crystal display device |
TWI521292B (zh) * | 2007-07-20 | 2016-02-11 | 半導體能源研究所股份有限公司 | 液晶顯示裝置 |
TW200950099A (en) * | 2008-01-31 | 2009-12-01 | Corning Inc | Thin film transistor having long lightly doped drain on SOI substrate and process for making same |
JP4807366B2 (ja) * | 2008-03-11 | 2011-11-02 | ソニー株式会社 | 表示装置 |
KR20120042064A (ko) * | 2010-10-22 | 2012-05-03 | 삼성모바일디스플레이주식회사 | 박막 트랜지스터 |
JP5925475B2 (ja) | 2010-12-09 | 2016-05-25 | 株式会社半導体エネルギー研究所 | 光検出回路 |
US8941112B2 (en) | 2010-12-28 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
TWI535032B (zh) | 2011-01-12 | 2016-05-21 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
JP5832399B2 (ja) | 2011-09-16 | 2015-12-16 | 株式会社半導体エネルギー研究所 | 発光装置 |
TWI596778B (zh) | 2012-06-29 | 2017-08-21 | 半導體能源研究所股份有限公司 | 半導體裝置及半導體裝置的製造方法 |
KR102069683B1 (ko) | 2012-08-24 | 2020-01-23 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치 |
DE102013217278B4 (de) | 2012-09-12 | 2017-03-30 | Semiconductor Energy Laboratory Co., Ltd. | Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung |
CN104022030B (zh) * | 2013-03-01 | 2017-07-11 | 中芯国际集成电路制造(上海)有限公司 | 间隙壁去除方法 |
KR102138280B1 (ko) * | 2013-04-30 | 2020-07-28 | 삼성디스플레이 주식회사 | 표시 패널 및 이를 구비하는 표시 장치 |
USRE48695E1 (en) | 2013-12-31 | 2021-08-17 | Beijing Visionox Technology Co., Ltd. | Transparent OLED device and display device employing same |
CN103715230B (zh) * | 2013-12-31 | 2018-12-07 | 北京维信诺科技有限公司 | 一种透明oled器件及其显示装置 |
CN104064472B (zh) * | 2014-06-13 | 2017-01-25 | 京东方科技集团股份有限公司 | 薄膜晶体管及其制作方法、显示装置 |
CN104867983A (zh) * | 2015-04-13 | 2015-08-26 | 北京大学 | 一种LDD/Offset结构薄膜晶体管及其制备方法 |
US11150140B2 (en) * | 2016-02-02 | 2021-10-19 | Kla Corporation | Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications |
JPWO2018178793A1 (ja) * | 2017-03-29 | 2020-02-06 | 株式会社半導体エネルギー研究所 | 半導体装置、半導体装置の作製方法 |
CN112420743A (zh) * | 2020-11-06 | 2021-02-26 | 深圳市华星光电半导体显示技术有限公司 | 显示面板和显示面板的制作方法 |
US20230093064A1 (en) * | 2021-09-17 | 2023-03-23 | Abhishek A. Sharma | Thin-film transistors with shared contacts |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4462041A (en) | 1981-03-20 | 1984-07-24 | Harris Corporation | High speed and current gain insulated gate field effect transistors |
JPS61222250A (ja) | 1985-03-28 | 1986-10-02 | Toshiba Corp | GaAsゲ−トアレイ集積回路 |
JPH065752B2 (ja) | 1986-06-25 | 1994-01-19 | 株式会社東芝 | 電界効果トランジスタ |
EP0333151B1 (en) | 1988-03-18 | 1993-10-20 | Seiko Epson Corporation | Thin film transistor |
GB2223353A (en) | 1988-09-30 | 1990-04-04 | Philips Electronic Associated | Thin-film transistor |
US5414278A (en) | 1991-07-04 | 1995-05-09 | Mitsushibi Denki Kabushiki Kaisha | Active matrix liquid crystal display device |
JPH05251700A (ja) | 1992-03-06 | 1993-09-28 | Nec Corp | 薄膜電界効果型トランジスタ |
JPH06123896A (ja) | 1992-10-13 | 1994-05-06 | Toshiba Corp | 液晶表示装置 |
JP3497198B2 (ja) | 1993-02-03 | 2004-02-16 | 株式会社半導体エネルギー研究所 | 半導体装置および薄膜トランジスタの作製方法 |
JPH06317812A (ja) * | 1993-04-30 | 1994-11-15 | Fuji Xerox Co Ltd | アクティブマトリクス素子及びその製造方法 |
US5589406A (en) | 1993-07-30 | 1996-12-31 | Ag Technology Co., Ltd. | Method of making TFT display |
JP3407975B2 (ja) | 1994-05-20 | 2003-05-19 | 株式会社半導体エネルギー研究所 | 薄膜半導体集積回路 |
JP3897826B2 (ja) | 1994-08-19 | 2007-03-28 | 株式会社半導体エネルギー研究所 | アクティブマトリクス型の表示装置 |
JPH1184418A (ja) | 1997-09-08 | 1999-03-26 | Sanyo Electric Co Ltd | 表示装置 |
US6107641A (en) | 1997-09-10 | 2000-08-22 | Xerox Corporation | Thin film transistor with reduced parasitic capacitance and reduced feed-through voltage |
JPH11338439A (ja) | 1998-03-27 | 1999-12-10 | Semiconductor Energy Lab Co Ltd | 半導体表示装置の駆動回路および半導体表示装置 |
US6617644B1 (en) * | 1998-11-09 | 2003-09-09 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing the same |
JP4536186B2 (ja) | 1998-11-16 | 2010-09-01 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6512271B1 (en) * | 1998-11-16 | 2003-01-28 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP2002175984A (ja) | 2000-12-08 | 2002-06-21 | Sharp Corp | 半導体装置の製造方法 |
JP4785271B2 (ja) * | 2001-04-27 | 2011-10-05 | 株式会社半導体エネルギー研究所 | 液晶表示装置、電子機器 |
JP2003197637A (ja) | 2001-12-27 | 2003-07-11 | Casio Comput Co Ltd | 薄膜トランジスタおよびその製造方法 |
JP2003332578A (ja) * | 2002-05-09 | 2003-11-21 | Sharp Corp | 薄膜トランジスタ及びその製造方法並びにこれを用いた液晶表示装置 |
JP2003335547A (ja) | 2002-05-20 | 2003-11-25 | Nippon Electric Glass Co Ltd | フラットパネルディスプレイ装置用ガラス基板 |
JP4083493B2 (ja) | 2002-07-30 | 2008-04-30 | 株式会社半導体エネルギー研究所 | 表示装置及び当該表示装置を具備する電子機器 |
US8552933B2 (en) * | 2003-06-30 | 2013-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device and driving method of the same |
-
2005
- 2005-02-21 SG SG200501171A patent/SG115733A1/en unknown
- 2005-03-04 US US11/071,255 patent/US7465958B2/en active Active
- 2005-03-14 CN CNB2005100547137A patent/CN100511712C/zh active Active
-
2008
- 2008-11-12 US US12/269,270 patent/US8884300B2/en active Active
-
2012
- 2012-01-17 JP JP2012007224A patent/JP5542262B2/ja not_active Expired - Fee Related
-
2014
- 2014-11-06 US US14/534,217 patent/US20150060871A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
JP5542262B2 (ja) | 2014-07-09 |
JP2012142582A (ja) | 2012-07-26 |
US20050199878A1 (en) | 2005-09-15 |
US20090072321A1 (en) | 2009-03-19 |
CN100511712C (zh) | 2009-07-08 |
CN1667840A (zh) | 2005-09-14 |
US20150060871A1 (en) | 2015-03-05 |
US8884300B2 (en) | 2014-11-11 |
US7465958B2 (en) | 2008-12-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG115733A1 (en) | Thin film transistor, semiconductor device, and method for manufacturing the same | |
TW200629544A (en) | Field effect transistor (FET) having wire channels and method of fabricating the same | |
TW200715562A (en) | Thin film transistor substrate and fabrication thereof | |
TW200734780A (en) | Display device and manufacturing method therefor | |
EP1873838A4 (en) | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME | |
WO2008132862A1 (ja) | 半導体装置およびその製造方法 | |
TW200715566A (en) | Display device and method of manufacturing the same | |
TW200625634A (en) | Transistor with strained region and method of manufacture | |
SE0303106D0 (sv) | Ldmos transistor device, integrated circuit, and fabrication method thereof | |
WO2016197502A1 (zh) | 薄膜晶体管及制作方法、阵列基板及制作方法和显示装置 | |
TW200511508A (en) | Semiconductor device, method for manufacturing the semiconductor device, and integrated circuit including the semiconductor device | |
WO2004006633A3 (en) | Integrated circuit including field effect transistor and method of manufacture | |
TW200625651A (en) | Thin film transistor, method of manufacturing the same, display apparatus having the same and method of manufacturing the display apparatus | |
TW200723531A (en) | Semiconductor device and semiconductor device manufacturing method | |
JP2011186108A5 (zh) | ||
TW200705668A (en) | Thin film transistor substrate and manufacturing method thereof | |
TW200729508A (en) | Thin-film transistor panel and method for manufacturing the same | |
TW200620653A (en) | Method of forming a raised source/drain and a semiconductor device employing the same | |
TW200703663A (en) | Thin film transistor substrate, liquid crystal display including the same, and manufacturing method thereof | |
TW200642088A (en) | Thin film transistor, thin film transistor panel, and method of manufacturing the same | |
TW200505274A (en) | Electro-luminescence device including a thin film transistor and method of fabricating an electro-luminescence device | |
TW200711145A (en) | Organic thin film transistor array panel and method for manufacturing the same | |
US9548392B2 (en) | Thin film transistor and method of manufacturing same | |
JP2007134684A5 (zh) | ||
TW200711140A (en) | Thin film transistor substrate and method for fabricating the same |