SG115733A1 - Thin film transistor, semiconductor device, and method for manufacturing the same - Google Patents

Thin film transistor, semiconductor device, and method for manufacturing the same

Info

Publication number
SG115733A1
SG115733A1 SG200501171A SG200501171A SG115733A1 SG 115733 A1 SG115733 A1 SG 115733A1 SG 200501171 A SG200501171 A SG 200501171A SG 200501171 A SG200501171 A SG 200501171A SG 115733 A1 SG115733 A1 SG 115733A1
Authority
SG
Singapore
Prior art keywords
thin film
current flows
gate electrodes
semiconductor device
semiconductor element
Prior art date
Application number
SG200501171A
Other languages
English (en)
Inventor
Arao Tatsuya
Miyake Hiroyuki
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of SG115733A1 publication Critical patent/SG115733A1/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/127Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1288Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1296Multistep manufacturing methods adapted to increase the uniformity of device parameters

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
SG200501171A 2004-03-12 2005-02-21 Thin film transistor, semiconductor device, and method for manufacturing the same SG115733A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004071793 2004-03-12

Publications (1)

Publication Number Publication Date
SG115733A1 true SG115733A1 (en) 2005-10-28

Family

ID=34918598

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200501171A SG115733A1 (en) 2004-03-12 2005-02-21 Thin film transistor, semiconductor device, and method for manufacturing the same

Country Status (4)

Country Link
US (3) US7465958B2 (zh)
JP (1) JP5542262B2 (zh)
CN (1) CN100511712C (zh)
SG (1) SG115733A1 (zh)

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US6753654B2 (en) * 2001-02-21 2004-06-22 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and electronic appliance
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
JP4876548B2 (ja) * 2005-11-22 2012-02-15 セイコーエプソン株式会社 電気光学装置の製造方法
TWI834568B (zh) 2006-09-29 2024-03-01 日商半導體能源研究所股份有限公司 半導體裝置
TWI336927B (en) * 2007-04-27 2011-02-01 Nanya Technology Corp Method for forming semiconductor device with single sided buried strap
US7738050B2 (en) * 2007-07-06 2010-06-15 Semiconductor Energy Laboratory Co., Ltd Liquid crystal display device
TWI521292B (zh) * 2007-07-20 2016-02-11 半導體能源研究所股份有限公司 液晶顯示裝置
TW200950099A (en) * 2008-01-31 2009-12-01 Corning Inc Thin film transistor having long lightly doped drain on SOI substrate and process for making same
JP4807366B2 (ja) * 2008-03-11 2011-11-02 ソニー株式会社 表示装置
KR20120042064A (ko) * 2010-10-22 2012-05-03 삼성모바일디스플레이주식회사 박막 트랜지스터
JP5925475B2 (ja) 2010-12-09 2016-05-25 株式会社半導体エネルギー研究所 光検出回路
US8941112B2 (en) 2010-12-28 2015-01-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI535032B (zh) 2011-01-12 2016-05-21 半導體能源研究所股份有限公司 半導體裝置的製造方法
JP5832399B2 (ja) 2011-09-16 2015-12-16 株式会社半導体エネルギー研究所 発光装置
TWI596778B (zh) 2012-06-29 2017-08-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
KR102069683B1 (ko) 2012-08-24 2020-01-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 방사선 검출 패널, 방사선 촬상 장치, 및 화상 진단 장치
DE102013217278B4 (de) 2012-09-12 2017-03-30 Semiconductor Energy Laboratory Co., Ltd. Photodetektorschaltung, Bildgebungsvorrichtung und Verfahren zum Ansteuern einer Photodetektorschaltung
CN104022030B (zh) * 2013-03-01 2017-07-11 中芯国际集成电路制造(上海)有限公司 间隙壁去除方法
KR102138280B1 (ko) * 2013-04-30 2020-07-28 삼성디스플레이 주식회사 표시 패널 및 이를 구비하는 표시 장치
USRE48695E1 (en) 2013-12-31 2021-08-17 Beijing Visionox Technology Co., Ltd. Transparent OLED device and display device employing same
CN103715230B (zh) * 2013-12-31 2018-12-07 北京维信诺科技有限公司 一种透明oled器件及其显示装置
CN104064472B (zh) * 2014-06-13 2017-01-25 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、显示装置
CN104867983A (zh) * 2015-04-13 2015-08-26 北京大学 一种LDD/Offset结构薄膜晶体管及其制备方法
US11150140B2 (en) * 2016-02-02 2021-10-19 Kla Corporation Instrumented substrate apparatus for acquiring measurement parameters in high temperature process applications
JPWO2018178793A1 (ja) * 2017-03-29 2020-02-06 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法
CN112420743A (zh) * 2020-11-06 2021-02-26 深圳市华星光电半导体显示技术有限公司 显示面板和显示面板的制作方法
US20230093064A1 (en) * 2021-09-17 2023-03-23 Abhishek A. Sharma Thin-film transistors with shared contacts

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Also Published As

Publication number Publication date
JP5542262B2 (ja) 2014-07-09
JP2012142582A (ja) 2012-07-26
US20050199878A1 (en) 2005-09-15
US20090072321A1 (en) 2009-03-19
CN100511712C (zh) 2009-07-08
CN1667840A (zh) 2005-09-14
US20150060871A1 (en) 2015-03-05
US8884300B2 (en) 2014-11-11
US7465958B2 (en) 2008-12-16

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