SG11201908791SA - Etchant composition for etching titanium layer or titanium-containing layer, and etching method - Google Patents

Etchant composition for etching titanium layer or titanium-containing layer, and etching method

Info

Publication number
SG11201908791SA
SG11201908791SA SG11201908791SA SG11201908791SA SG 11201908791S A SG11201908791S A SG 11201908791SA SG 11201908791S A SG11201908791S A SG 11201908791SA SG 11201908791S A SG11201908791S A SG 11201908791SA
Authority
SG
Singapore
Prior art keywords
titanium
layer
etching
etchant composition
containing layer
Prior art date
Application number
Other languages
English (en)
Inventor
Ryou Sasaki
Hideki Takahashi
Taiga Yokoyama
Original Assignee
Kanto Kagaku
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Kagaku filed Critical Kanto Kagaku
Publication of SG11201908791SA publication Critical patent/SG11201908791SA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/38—Alkaline compositions for etching refractory metals
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
SG11201908791S 2017-03-31 2018-03-30 Etchant composition for etching titanium layer or titanium-containing layer, and etching method SG11201908791SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017071076 2017-03-31
PCT/JP2018/013603 WO2018181896A1 (ja) 2017-03-31 2018-03-30 チタン層またはチタン含有層のエッチング液組成物およびエッチング方法

Publications (1)

Publication Number Publication Date
SG11201908791SA true SG11201908791SA (en) 2019-10-30

Family

ID=63678051

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201908791S SG11201908791SA (en) 2017-03-31 2018-03-30 Etchant composition for etching titanium layer or titanium-containing layer, and etching method

Country Status (7)

Country Link
US (1) US10920326B2 (zh)
JP (1) JP7220142B2 (zh)
KR (1) KR102527728B1 (zh)
CN (1) CN110462799B (zh)
SG (1) SG11201908791SA (zh)
TW (1) TWI808965B (zh)
WO (1) WO2018181896A1 (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020202320A (ja) * 2019-06-12 2020-12-17 関東化学株式会社 過酸化水素分解抑制剤
KR20210100258A (ko) * 2020-02-05 2021-08-17 삼성전자주식회사 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법
JP7449127B2 (ja) 2020-03-11 2024-03-13 株式会社Ｓｃｒｅｅｎホールディングス 基板処理液、基板処理方法および基板処理装置
KR20220166348A (ko) * 2020-04-14 2022-12-16 엔테그리스, 아이엔씨. 몰리브데넘을 에칭하기 위한 방법 및 조성물
CN111893488A (zh) * 2020-08-04 2020-11-06 深圳市乾行达科技有限公司 蚀刻液及其制备方法
KR20230048318A (ko) * 2020-08-07 2023-04-11 가부시끼가이샤 도꾸야마 반도체 웨이퍼용 처리액
KR102444064B1 (ko) * 2021-08-23 2022-09-16 백영기 금범프 공정의 언더범프메탈층인 티탄합금 박막 에칭 조성물 및 이를 사용한 언더범프메탈층인 티탄합금 박막 에칭방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5344051B2 (zh) 1973-11-22 1978-11-25
US5071510A (en) * 1989-09-22 1991-12-10 Robert Bosch Gmbh Process for anisotropic etching of silicon plates
JP4661005B2 (ja) 2000-09-05 2011-03-30 和光純薬工業株式会社 Ｔｉ系膜用エッチング剤及びエッチング方法
JP4471094B2 (ja) 2004-05-11 2010-06-02 三菱瓦斯化学株式会社 チタンまたはチタン合金のエッチング液
WO2006137497A1 (ja) * 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
KR20100098409A (ko) 2007-11-22 2010-09-06 간또 가가꾸 가부시끼가이샤 에칭액 조성물
CN101903988B (zh) 2007-12-21 2013-07-31 和光纯药工业株式会社 蚀刻剂、蚀刻方法及蚀刻剂制备液
EP2322692B1 (en) 2008-09-09 2016-10-12 Showa Denko K.K. Etchant for titanium-based metal, tungsten-based metal, titanium-tungsten-based metal or nitrides thereof
JP5396514B2 (ja) 2011-06-30 2014-01-22 富士フイルム株式会社 エッチング方法及びこれに用いられるエッチング液、これを用いた半導体基板製品の製造方法
JP6066552B2 (ja) * 2011-12-06 2017-01-25 関東化學株式会社 電子デバイス用洗浄液組成物
JP6329909B2 (ja) * 2011-12-28 2018-05-23 インテグリス・インコーポレーテッド 窒化チタンを選択的にエッチングするための組成物および方法
US8835326B2 (en) * 2012-01-04 2014-09-16 International Business Machines Corporation Titanium-nitride removal
KR101630654B1 (ko) * 2012-07-20 2016-06-15 후지필름 가부시키가이샤 에칭방법, 이것을 사용한 반도체 기판 제품 및 반도체 소자의 제조방법
JP6198384B2 (ja) 2012-11-28 2017-09-20 富士フイルム株式会社 半導体基板のエッチング方法及び半導体素子の製造方法
EP3004287B1 (en) * 2013-06-06 2021-08-18 Entegris, Inc. Compositions and methods for selectively etching titanium nitride
WO2015002272A1 (ja) * 2013-07-05 2015-01-08 和光純薬工業株式会社 エッチング剤、エッチング方法およびエッチング剤調製液
US20150104952A1 (en) * 2013-10-11 2015-04-16 Ekc Technology, Inc. Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper
WO2015108842A1 (en) 2014-01-14 2015-07-23 Sachem, Inc. Selective metal/metal oxide etch process
KR102150513B1 (ko) * 2014-03-13 2020-09-01 동우 화인켐 주식회사 구리막 및 티타늄막의 식각액 조성물 및 이를 이용한 액정표시장치용 어레이 기판의 제조방법
JP2016027186A (ja) 2014-06-24 2016-02-18 東京応化工業株式会社 チタン又はチタン化合物用の剥離液、及び配線形成方法
JP6531612B2 (ja) 2014-11-27 2019-06-19 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
JP6657770B2 (ja) 2014-11-27 2020-03-04 三菱瓦斯化学株式会社 液体組成物およびこれを用いたエッチング方法
US9976111B2 (en) * 2015-05-01 2018-05-22 Versum Materials Us, Llc TiN hard mask and etch residual removal

Also Published As

Publication number Publication date
JPWO2018181896A1 (ja) 2020-02-27
KR20190133749A (ko) 2019-12-03
WO2018181896A1 (ja) 2018-10-04
JP7220142B2 (ja) 2023-02-09
KR102527728B1 (ko) 2023-04-28
TW201842233A (zh) 2018-12-01
CN110462799A (zh) 2019-11-15
CN110462799B (zh) 2023-12-26
US20200024750A1 (en) 2020-01-23
TWI808965B (zh) 2023-07-21
US10920326B2 (en) 2021-02-16

Similar Documents

Publication Publication Date Title
SG11201908791SA (en) Etchant composition for etching titanium layer or titanium-containing layer, and etching method
ES2488397T3 (es) Composición para la pasivación alcalina de superficies de cinc
SG10201801141TA (en) Selective deposition of silicon oxide
WO2013140177A3 (en) Etched silicon structures, method of forming etched silicon structures and uses thereof
MY173184A (en) Tin hard mask and etch residue removal
SG143125A1 (en) Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution
JP2016540889A5 (zh)
EP3579291A3 (en) Method of forming niobium nitride electrode for capacitor
BR112015004464A2 (pt) método de produção de ímãs permanentes de terra rara
PH12017501562A1 (en) Activation method for silicon substrates
AU2015275507A8 (en) Cyclic dipeptide-containing composition
ATE486896T1 (de) Colöserfreie, selbstvernetzende pur-dispersionen
TW200606280A (en) Etching solution for titanium and titanium alloy
WO2016154640A8 (de) Verwendung einer trichothecene transformierenden alkoholdehydrogenase, verfahren zur transformation von trichothecenen sowie trichothecene transformierender zusatzstoff
SG10201710671TA (en) Photomask Blank, and Preparation Method Thereof
MX2016005564A (es) Capa de carrera contra oxidacion.
WO2015099217A8 (ko) 연질 고규소 강판 및 그 제조방법
MX2019001759A (es) Composicion de pretratamiento.
AU2015207810A1 (en) Method for manufacturing hydrated magnesium carbonate
MX2022012110A (es) Sistemas crispr clase ii tipo ii.
GB2537549A (en) Selective metal/metal oxide etch process
EP4129890A4 (en) CURVED SUBSTRATE ETCHING METHOD
MX2019007730A (es) Pelicula de nitruro de silicio y vanadio, miembro recubierto con la pelicula de nitruro de silicio y vanadio y metodo para la fabricacion del mismo.
TW200632140A (en) Fine treatment agent and fine treatment method using the same
TW200716484A (en) A media having crystals of ammonium oxotrifluorotitanate, a method for preparing the same, and a method for preparing madias having crystals of titanium dioxide