JP7449127B2 - 基板処理液、基板処理方法および基板処理装置 - Google Patents
基板処理液、基板処理方法および基板処理装置 Download PDFInfo
- Publication number
- JP7449127B2 JP7449127B2 JP2020041546A JP2020041546A JP7449127B2 JP 7449127 B2 JP7449127 B2 JP 7449127B2 JP 2020041546 A JP2020041546 A JP 2020041546A JP 2020041546 A JP2020041546 A JP 2020041546A JP 7449127 B2 JP7449127 B2 JP 7449127B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate processing
- substrate
- processing liquid
- metal
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 331
- 238000012545 processing Methods 0.000 title claims description 183
- 239000007788 liquid Substances 0.000 title claims description 110
- 238000003672 processing method Methods 0.000 title claims description 16
- 239000010410 layer Substances 0.000 claims description 112
- 238000005530 etching Methods 0.000 claims description 82
- 239000000243 solution Substances 0.000 claims description 56
- 229910052751 metal Inorganic materials 0.000 claims description 55
- 239000002184 metal Substances 0.000 claims description 55
- 239000003795 chemical substances by application Substances 0.000 claims description 52
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical group OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 40
- 239000003002 pH adjusting agent Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 24
- 150000002500 ions Chemical class 0.000 claims description 22
- 230000008569 process Effects 0.000 claims description 22
- 239000007864 aqueous solution Substances 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 17
- 230000006870 function Effects 0.000 claims description 14
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 9
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims description 9
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 4
- 125000005210 alkyl ammonium group Chemical group 0.000 claims description 4
- 150000003863 ammonium salts Chemical group 0.000 claims description 4
- 229910017604 nitric acid Inorganic materials 0.000 claims description 4
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 239000002344 surface layer Substances 0.000 claims description 3
- 150000001450 anions Chemical class 0.000 claims description 2
- 239000008367 deionised water Substances 0.000 description 42
- 229910021641 deionized water Inorganic materials 0.000 description 42
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 42
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 35
- 230000007246 mechanism Effects 0.000 description 31
- 230000000903 blocking effect Effects 0.000 description 30
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 29
- 235000019270 ammonium chloride Nutrition 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 13
- 229910001873 dinitrogen Inorganic materials 0.000 description 13
- 230000004044 response Effects 0.000 description 13
- 238000002156 mixing Methods 0.000 description 12
- 238000012546 transfer Methods 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 11
- 239000007789 gas Substances 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- 235000011114 ammonium hydroxide Nutrition 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 8
- 230000007423 decrease Effects 0.000 description 7
- 150000002736 metal compounds Chemical class 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 238000001035 drying Methods 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 4
- 239000011259 mixed solution Substances 0.000 description 4
- FPGGTKZVZWFYPV-UHFFFAOYSA-M tetrabutylammonium fluoride Chemical compound [F-].CCCC[N+](CCCC)(CCCC)CCCC FPGGTKZVZWFYPV-UHFFFAOYSA-M 0.000 description 4
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000002378 acidificating effect Effects 0.000 description 3
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000004090 dissolution Methods 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 235000011007 phosphoric acid Nutrition 0.000 description 3
- 235000011121 sodium hydroxide Nutrition 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 description 3
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical compound [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 description 3
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKIZCWYLBDKLSU-UHFFFAOYSA-M N,N,N-Trimethylmethanaminium chloride Chemical compound [Cl-].C[N+](C)(C)C OKIZCWYLBDKLSU-UHFFFAOYSA-M 0.000 description 2
- JYXGIOKAKDAARW-UHFFFAOYSA-N N-(2-hydroxyethyl)iminodiacetic acid Chemical compound OCCN(CC(O)=O)CC(O)=O JYXGIOKAKDAARW-UHFFFAOYSA-N 0.000 description 2
- 229910004491 TaAlN Inorganic materials 0.000 description 2
- 239000002738 chelating agent Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- DEFVIWRASFVYLL-UHFFFAOYSA-N ethylene glycol bis(2-aminoethyl)tetraacetic acid Chemical compound OC(=O)CN(CC(O)=O)CCOCCOCCN(CC(O)=O)CC(O)=O DEFVIWRASFVYLL-UHFFFAOYSA-N 0.000 description 2
- 150000004820 halides Chemical class 0.000 description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 2
- SHFJWMWCIHQNCP-UHFFFAOYSA-M hydron;tetrabutylazanium;sulfate Chemical compound OS([O-])(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC SHFJWMWCIHQNCP-UHFFFAOYSA-M 0.000 description 2
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 description 2
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- YMBCJWGVCUEGHA-UHFFFAOYSA-M tetraethylammonium chloride Chemical compound [Cl-].CC[N+](CC)(CC)CC YMBCJWGVCUEGHA-UHFFFAOYSA-M 0.000 description 2
- UQFSVBXCNGCBBW-UHFFFAOYSA-M tetraethylammonium iodide Chemical compound [I-].CC[N+](CC)(CC)CC UQFSVBXCNGCBBW-UHFFFAOYSA-M 0.000 description 2
- QSUJAUYJBJRLKV-UHFFFAOYSA-M tetraethylazanium;fluoride Chemical compound [F-].CC[N+](CC)(CC)CC QSUJAUYJBJRLKV-UHFFFAOYSA-M 0.000 description 2
- RXMRGBVLCSYIBO-UHFFFAOYSA-M tetramethylazanium;iodide Chemical compound [I-].C[N+](C)(C)C RXMRGBVLCSYIBO-UHFFFAOYSA-M 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- XZXYQEHISUMZAT-UHFFFAOYSA-N 2-[(2-hydroxy-5-methylphenyl)methyl]-4-methylphenol Chemical compound CC1=CC=C(O)C(CC=2C(=CC=C(C)C=2)O)=C1 XZXYQEHISUMZAT-UHFFFAOYSA-N 0.000 description 1
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- USFZMSVCRYTOJT-UHFFFAOYSA-N Ammonium acetate Chemical compound N.CC(O)=O USFZMSVCRYTOJT-UHFFFAOYSA-N 0.000 description 1
- 239000005695 Ammonium acetate Substances 0.000 description 1
- 239000004254 Ammonium phosphate Substances 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910021193 La 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- LBXOVWWXGPSSJU-UHFFFAOYSA-N [H]S(=O)=O Chemical class [H]S(=O)=O LBXOVWWXGPSSJU-UHFFFAOYSA-N 0.000 description 1
- PUWRRFJWMBAYMQ-UHFFFAOYSA-L [Na+].[Na+].[Na+].CP([O-])([O-])=O Chemical compound [Na+].[Na+].[Na+].CP([O-])([O-])=O PUWRRFJWMBAYMQ-UHFFFAOYSA-L 0.000 description 1
- 150000001242 acetic acid derivatives Chemical class 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229940043376 ammonium acetate Drugs 0.000 description 1
- 235000019257 ammonium acetate Nutrition 0.000 description 1
- LDDQLRUQCUTJBB-UHFFFAOYSA-N ammonium fluoride Chemical compound [NH4+].[F-] LDDQLRUQCUTJBB-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-O ammonium group Chemical group [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 1
- 229940107816 ammonium iodide Drugs 0.000 description 1
- UKFWSNCTAHXBQN-UHFFFAOYSA-N ammonium iodide Chemical compound [NH4+].[I-] UKFWSNCTAHXBQN-UHFFFAOYSA-N 0.000 description 1
- 229910000148 ammonium phosphate Inorganic materials 0.000 description 1
- 235000019289 ammonium phosphates Nutrition 0.000 description 1
- BFNBIHQBYMNNAN-UHFFFAOYSA-N ammonium sulfate Chemical compound N.N.OS(O)(=O)=O BFNBIHQBYMNNAN-UHFFFAOYSA-N 0.000 description 1
- 229910052921 ammonium sulfate Inorganic materials 0.000 description 1
- UYJXRRSPUVSSMN-UHFFFAOYSA-P ammonium sulfide Chemical compound [NH4+].[NH4+].[S-2] UYJXRRSPUVSSMN-UHFFFAOYSA-P 0.000 description 1
- 235000011130 ammonium sulphate Nutrition 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000009918 complex formation Effects 0.000 description 1
- 239000008139 complexing agent Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- MNNHAPBLZZVQHP-UHFFFAOYSA-N diammonium hydrogen phosphate Chemical compound [NH4+].[NH4+].OP([O-])([O-])=O MNNHAPBLZZVQHP-UHFFFAOYSA-N 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 229940113960 edetate calcium Drugs 0.000 description 1
- 229960001484 edetic acid Drugs 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 238000010979 pH adjustment Methods 0.000 description 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical class OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 1
- 150000003141 primary amines Chemical class 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003335 secondary amines Chemical class 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WGRULTCAYDOGQK-UHFFFAOYSA-M sodium;sodium;hydroxide Chemical compound [OH-].[Na].[Na+] WGRULTCAYDOGQK-UHFFFAOYSA-M 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- DPKBAXPHAYBPRL-UHFFFAOYSA-M tetrabutylazanium;iodide Chemical compound [I-].CCCC[N+](CCCC)(CCCC)CCCC DPKBAXPHAYBPRL-UHFFFAOYSA-M 0.000 description 1
- KBLZDCFTQSIIOH-UHFFFAOYSA-M tetrabutylazanium;perchlorate Chemical compound [O-]Cl(=O)(=O)=O.CCCC[N+](CCCC)(CCCC)CCCC KBLZDCFTQSIIOH-UHFFFAOYSA-M 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- MRYQZMHVZZSQRT-UHFFFAOYSA-M tetramethylazanium;acetate Chemical compound CC([O-])=O.C[N+](C)(C)C MRYQZMHVZZSQRT-UHFFFAOYSA-M 0.000 description 1
- GTDKXDWWMOMSFL-UHFFFAOYSA-M tetramethylazanium;fluoride Chemical compound [F-].C[N+](C)(C)C GTDKXDWWMOMSFL-UHFFFAOYSA-M 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- PTMFUWGXPRYYMC-UHFFFAOYSA-N triethylazanium;formate Chemical compound OC=O.CCN(CC)CC PTMFUWGXPRYYMC-UHFFFAOYSA-N 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/26—Acidic compositions for etching refractory metals
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67167—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers surrounding a central transfer chamber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67742—Mechanical parts of transfer devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28088—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a composite, e.g. TiN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Description
本発明は、基板に形成されたトレンチ構造の底壁や側壁の少なくとも1つを被エッチング層とし、基板に基板処理液を供給することで被エッチング層をウェットエッチングして所望形状に仕上げる基板処理方法および基板処理装置、ならびに上記エッチングを効果的に行う基板処理液に関するものである。特に、本発明に係る基板処理方法では、被エッチング層が金属または金属の化合物で構成され、当該金属をエッチングするエッチャントとして機能するH2O2分子またはHO2 -を含む薬液によりエッチング処理が行われる。当該薬液として、例えば過酸化水素水溶液を用いることができる。また、基板処理方法は、例えば図1に示すようにFinFETのゲートを製造する一工程に適用可能である。
(NH4 +)nXn-
ここで、Xn-はn価のアニオンで、nは1または2である、
で表されるアンモニウム塩を用いることができる。アンモニウム塩としては、
・フッ化アンモニウム NH4F (Ammonium Fluoride)
・塩化アンモニウム NH4Cl (Ammonium Chloride)
・臭化アンモニウム NH4Br (Ammonium Bromide)
・ヨウ化アンモニウム NH4I (Ammonium Iodide)
・硫化アンモニウム (NH4)2SO4 (Ammonium Sulfide)
・酢酸アンモニウム NH4CH3CO2 (Ammonium Acetate)
・リン酸アンモニウム (NH4)2PO4 (Ammonium Phosphate)
が含まれる。
・フッ化テトラメチルアンモニウム [(CH3)4N]F (TetraMethylAmmonium Fluoride; TMAF)
・フッ化テトラエチルアンモニウム [(CH3CH2CH2)4N]F (TetraEthylAmmonium Fluoride; TEAF)
・フッ化テトラブチルアンモニウム [(CH3CH2CH2CH2CH2)4N]F (TetraButhylAmmonium Fluoride; TBAF)
・塩化テトラメチルアンモニウム [(CH3)4N]Cl (TetraMethylAmmonium Chloride; TMAC)
・塩化テトラエチルアンモニウム [(CH3CH2CH2)4N]Cl (TetraEthylAmmonium Chloride; TEAC)
・塩化テトラブチルアンモニウム [(CH3CH2CH2CH2CH2)4N]Cl (TetraButhylAmmonium Chloride; TBAC)
・ヨウ化テトラメチルアンモニウム [(CH3)4N]I (TetraMethylAmmonium Iodide; TMAI)
・ヨウ化テトラエチルアンモニウム [(CH3CH2CH2)4N]I (TetraEthylAmmonium Iodide; TEAI)
・ヨウ化テトラブチルアンモニウム [(CH3CH2CH2CH2CH2)4N]I (TetraButhylAmmonium Iodide; TBAI)
などのハロゲン化物、硫酸水素テトラブチルアンモニウムなどの硫酸水素化物、酢酸テトラメチルアンモニウムなどの酢酸化物、水酸化テトラエチルアンモニウムなどの水酸化物、過塩素酸テトラブチルアンモニウムなどの過塩素酸、などが含まれる。
キレート剤として、例えば、エチレンジアミン四酢酸(EDTA)、エデト酸カルシウムナトリウム水和物、グリコールエーテルジアミン四酢酸(EGTA)、ヒドロキシエチルイミノ二酢酸(HIDA)、イミノ二酢酸(IDA)、ニトリロ三酢酸(NTA)、ノトリロトリスメチルホスホン酸三ナトリウム塩(NTPO)、トリエチレンテトラミン六酢酸(TTHA)を用いることができる。
・水酸化アンモニウム(NH4OH Ammonium Hydroxide)
・水酸化ナトリウム(NaOH Sodium Hydroxide)
・水酸化カリウム(KOH Potassium Hydroxide)
などがあり、これらのうちの少なくとも1種を用いることができる。一方、錯体形成剤の添加により基板処理液のpHが所望値よりも高くなり過ぎる際には、pHを5以上に保つことを前提に酸性のpH調整剤をさらに添加してもよい。酸性のpH調整剤としては、
・塩酸(HCl Hydrochloric Acid)
・硫酸(H2SO4 Sulfuric Acid)
・硝酸(HNO3 Nitric Acid)
・リン酸(H3PO4 Phosphoric Acid)
などがあり、これらのうちの少なくとも1種を用いることができる。
次に、上記基板処理液を用いて図1に示す基板処理方法を実行する基板処理装置の構成および動作を図2ないし図7を参照しつつ説明する。
EMa≒EMb
となる。そして、(EMa/EMb)を基板Waのブランケット比と定義すると、基板WaにおけるTiN層W5の厚みTHaが薄くなると、図1の上段中の開口寸法OWが狭くなった場合と同様に、狭所空間W7にエッチャントが侵入し難くなる。そのため、エッチングレートは小さくなり、基板Waのブランケット比は「1」から減少する。そこで、本実施例では、THaが2nm、5nmおよび10nmの基板Waと、基板Wbとを準備するとともに、5種類の基板処理液を調製した。
(1)過酸化水素水溶液と、DIWとを1:5で混合した混合液に錯体形成剤として塩化アンモニウムを1mM加え、NH4 +イオン濃度を1m mol/Lに調整したもの(pHはほぼ5)
(2)過酸化水素水溶液と、DIWとを1:5で混合した混合液に錯体形成剤として塩化アンモニウムを10mM加え、NH4 +イオン濃度を10m mol/Lに調整したもの(pHはほぼ5)
(3)過酸化水素水溶液と、DIWとを1:5で混合した混合液に錯体形成剤として塩化アンモニウムを100mM加え、NH4 +イオン濃度を100m mol/Lに調整したもの(pHはほぼ5)
(4)過酸化水素水溶液と、DIWとを1:5で混合したもの(pHはほぼ5)
(5)過酸化水素水溶液と、pH調整剤としての塩酸と、DIWとを1:1:5で混合したもの(pHは1よりも小さい)、
である。そして、各基板処理液を基板Wa、Wbに供給して1分間にエッチングされた厚み、つまりエッチング量EMca、EMbを計測することで狭所空間W7でのエッチングレート(ER(nm/min))を求めた。また、(EMa/EMb)が基板Waのブランケット比(BL比)である。それらの結果をまとめたものが表1である。また、図1に示すTiN層12aの開口寸法OWに相当する厚みTHaの値に対するブランケット比をプロットしたものが図9である。なお、これらの点については、後で説明する表2や図10においても同様である。
(6)過酸化水素水溶液と、pH調整剤としての水酸化アンモニウムと、DIWとを1:0.01:5で混合したものに錯体形成剤として塩化アンモニウムを1mM加えたものであり、NH4 +イオン濃度は1.67m mol/Lとなっているもの(pHはほぼ9)
(7)過酸化水素水溶液と、pH調整剤としての水酸化アンモニウムと、DIWとを1:0.01:5で混合したものに錯体形成剤として塩化アンモニウムを10mM加えたものであり、NH4 +イオン濃度は10.67m mol/Lとなっているもの(pHはほぼ9)
(8)過酸化水素水溶液と、pH調整剤としての水酸化アンモニウムと、DIWとを1:0.001:5で混合したものであり、NH4 +イオン濃度は0.21m mol/Lとなっているもの(pHはほぼ8)
(9)過酸化水素水溶液と、pH調整剤としての水酸化アンモニウムと、DIWとを1:0.01:5で混合したものであり、NH4 +イオン濃度は0.67m mol/Lとなっているもの(pHはほぼ9)
(10)過酸化水素水溶液と、pH調整剤としての水酸化アンモニウムと、DIWとを1:0.1:5で混合したものであり、NH4 +イオン濃度は2.1m mol/Lとなっているもの(pHはほぼ10)
(11)上記基板処理液(5)と同じもの、つまり過酸化水素水溶液と、pH調整剤としての塩酸と、DIWとを1:1:5で混合したもの(pHは1よりも小さい)、
である。そして、各基板処理液を基板Wa、Wbに供給してエッチングレート(ER(nm/min))およびブランケット比(BL比)を求めた。そして、それらの結果を表2にまとめるとともに、厚みTHaの値に対するブランケット比を図10にプロットした。
3…スピンチャック(基板保持部)
11…高k誘電体層
12…金属層
12a…TiN層(高k金属ゲート層の表層)
12c…開口部
12d…底壁
12e…側壁
12f…狭所空間
13…HKMG層(高k金属ゲート層)
400…処理液供給部
F…フィン
OW…開口寸法(狭小幅)
W,Wa,Wb…基板
Claims (15)
- 10nm以下の狭小幅を有する開口部と前記開口部の対向する底壁と前記底壁から前記開口部に向けて延設される1または複数の側壁とで狭所空間が形成されるとともに前記底壁および前記側壁のうちの少なくとも一方がチタンおよびタンタルのうちの少なくとも1種を含む金属または前記金属の化合物の被エッチング層で形成された、トレンチ構造を有する基板に供給されることで前記被エッチング層を除去する基板処理液であって、
前記金属をエッチングするエッチャントとして機能するH2O2分子またはHO2 -を含む薬液と、
前記金属のイオンと錯体を形成するNH4 +を含む錯体形成剤とを備え、
pH5以上に調整されたことを特徴とする基板処理液。 - 請求項1に記載の基板処理液であって、
前記基板には、FinFETのゲートを形成するために前記基板の表面から互いに離間して立設された隣接する2つのフィンを跨いで覆う高k金属ゲート層が形成され、
前記高k金属ゲート層の表層を前記被エッチング層としてエッチング除去する基板処理液。 - 請求項1または2に記載の基板処理液であって、
前記薬液は過酸化水素水溶液である基板処理液。 - 請求項1ないし3のいずれか一項に記載の基板処理液であって、
前記錯体形成剤は、アルキルアンモニウム塩、または下記一般式(1)
(NH4 +)nXn- … (1)
ここで、Xn-はn価のアニオンで、nは1または2である、
で表されるアンモニウム塩である基板処理液。 - 請求項1ないし4のいずれか一項に記載の基板処理液であって、
pH9以下に調整された基板処理液。 - 請求項1ないし5のいずれか一項に記載の基板処理液であって、
pHを調整するpH調整剤をさらに備え、
前記pH調整剤は塩酸、硫酸、硝酸およびリン酸のうちの少なくとも1種を含む基板処理液。 - 請求項1ないし5のいずれか一項に記載の基板処理液であって、
pHを調整するpH調整剤をさらに備え、
前記pH調整剤は水酸化アンモニウム、水酸化ナトリウムおよび水酸化カリウムのうちの少なくとも1種を含む基板処理液。 - 請求項1ないし7のいずれか一項に記載の基板処理液であって、
前記錯体形成剤のイオン濃度が1m mol/L以上10m mol/L以下である基板処理液。 - 請求項1ないし8のいずれか一項に記載の基板処理液であって、
pH8以上に調整されており、
前記錯体形成剤のイオン濃度が1m mol/L以上2m mol/L以下である基板処理液。 - 10nm以下の狭小幅を有する開口部と前記開口部の対向する底壁と前記底壁から前記開口部に向けて延設される1または複数の側壁とで狭所空間が形成されるとともに前記底壁および前記側壁のうちの少なくとも一方が、金属または前記金属の化合物で構成される被エッチング層により形成されたトレンチ構造を有する基板に対し、基板処理液を供給して前記被エッチング層の除去を開始する工程と、
前記基板から前記基板処理液を除去して前記被エッチング層の除去を停止させる工程とを備え、
前記金属は、チタンおよびタンタルのうちの少なくとも1種を含み、
前記基板処理液は、
前記金属をエッチングするエッチャントとして機能するH2O2分子またはHO2 -を含む薬液と、
前記金属のイオンと錯体を形成するNH4 +を含む錯体形成剤とを備え、
pH5以上に調整されている
ことを特徴とする基板処理方法。 - 請求項10に記載の基板処理方法であって、
前記基板処理液の前記錯体形成剤のイオン濃度が1m mol/L以上10m mol/L以下である基板処理方法。 - 請求項10または11に記載の基板処理方法であって、
前記基板処理液はpH8以上に調整されており、
前記基板処理液の前記錯体形成剤のイオン濃度が1m mol/L以上2m mol/L以下である基板処理方法。 - 10nm以下の狭小幅を有する開口部と前記開口部の対向する底壁と前記底壁から前記開口部に向けて延設される1または複数の側壁とで狭所空間が形成されるとともに前記底壁および前記側壁のうちの少なくとも一方が、金属または前記金属の化合物で構成される被エッチング層により形成されたトレンチ構造を有する基板を保持する基板保持部と、
前記基板保持部に保持された前記基板に基板処理液を供給する処理液供給部とを備え、
前記金属は、チタンおよびタンタルのうちの少なくとも1種を含み、
前記基板処理液は、
前記金属をエッチングするエッチャントとして機能するH2O2分子またはHO2 -を含む薬液と、
前記金属のイオンと錯体を形成するNH4 +を含む錯体形成剤とを備え、
pH5以上に調整されている
ことを特徴とする基板処理装置。 - 請求項13に記載の基板処理装置であって、
前記基板処理液の前記錯体形成剤のイオン濃度が1m mol/L以上10m mol/L以下である基板処理装置。 - 請求項13または14に記載の基板処理装置であって、
前記基板処理液はpH8以上に調整されており、
前記基板処理液の前記錯体形成剤のイオン濃度が1m mol/L以上2m mol/L以下である基板処理装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020041546A JP7449127B2 (ja) | 2020-03-11 | 2020-03-11 | 基板処理液、基板処理方法および基板処理装置 |
TW110101078A TWI827902B (zh) | 2020-03-11 | 2021-01-12 | 基板處理液、基板處理方法及基板處理裝置 |
CN202110198133.4A CN113388837A (zh) | 2020-03-11 | 2021-02-22 | 衬底处理液、衬底处理方法及衬底处理装置 |
US17/191,841 US11908938B2 (en) | 2020-03-11 | 2021-03-04 | Substrate processing liquid for etching a metal layer, substrate processing method and substrate processing apparatus |
KR1020210031297A KR102573057B1 (ko) | 2020-03-11 | 2021-03-10 | 기판 처리액, 기판 처리 방법 및 기판 처리 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020041546A JP7449127B2 (ja) | 2020-03-11 | 2020-03-11 | 基板処理液、基板処理方法および基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2021145009A JP2021145009A (ja) | 2021-09-24 |
JP7449127B2 true JP7449127B2 (ja) | 2024-03-13 |
Family
ID=77617262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2020041546A Active JP7449127B2 (ja) | 2020-03-11 | 2020-03-11 | 基板処理液、基板処理方法および基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11908938B2 (ja) |
JP (1) | JP7449127B2 (ja) |
KR (1) | KR102573057B1 (ja) |
CN (1) | CN113388837A (ja) |
TW (1) | TWI827902B (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2023090381A (ja) * | 2021-12-17 | 2023-06-29 | 株式会社Screenホールディングス | 基板処理方法 |
JP2023123997A (ja) * | 2022-02-25 | 2023-09-06 | 株式会社Screenホールディングス | 基板処理液、基板処理方法および基板処理装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050250339A1 (en) | 2004-05-06 | 2005-11-10 | Shea Kevin R | Methods of removing metal-containing materials |
US20180148645A1 (en) | 2016-11-29 | 2018-05-31 | Samsung Electronics Co., Ltd. | Etching composition and method for fabricating semiconductor device by using the same |
WO2018181896A1 (ja) | 2017-03-31 | 2018-10-04 | 関東化學株式会社 | チタン層またはチタン含有層のエッチング液組成物およびエッチング方法 |
JP2019061978A (ja) | 2017-09-22 | 2019-04-18 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8372757B2 (en) * | 2003-10-20 | 2013-02-12 | Novellus Systems, Inc. | Wet etching methods for copper removal and planarization in semiconductor processing |
JP2007294625A (ja) | 2006-04-25 | 2007-11-08 | Sony Corp | 半導体装置の製造方法 |
JP4972350B2 (ja) | 2006-06-30 | 2012-07-11 | 株式会社日立製作所 | 半導体装置の製造方法 |
KR101126509B1 (ko) * | 2009-07-23 | 2012-03-29 | 노벨러스 시스템즈, 인코포레이티드 | 등방성 구리 식각을 위한 식각 조성물 |
US20130200040A1 (en) * | 2012-01-04 | 2013-08-08 | International Business Machines Corporation | Titanium nitride removal |
US9070625B2 (en) * | 2012-01-04 | 2015-06-30 | International Business Machines Corporation | Selective etch chemistry for gate electrode materials |
US8815668B2 (en) | 2012-12-07 | 2014-08-26 | International Business Machines Corporation | Preventing FIN erosion and limiting Epi overburden in FinFET structures by composite hardmask |
KR101790090B1 (ko) | 2013-05-02 | 2017-10-25 | 후지필름 가부시키가이샤 | 에칭 방법, 이에 이용하는 에칭액 및 에칭액의 키트, 및 반도체 기판 제품의 제조 방법 |
CN104425603A (zh) * | 2013-09-02 | 2015-03-18 | 中国科学院微电子研究所 | 半导体器件及其制造方法 |
CN115044375A (zh) * | 2014-03-18 | 2022-09-13 | 富士胶片电子材料美国有限公司 | 蚀刻组合物 |
KR101587758B1 (ko) * | 2015-03-05 | 2016-01-21 | 동우 화인켐 주식회사 | 질화 티탄(TiN) 막의 식각액 조성물 및 그를 이용한 금속배선의 형성 방법 |
US10870799B2 (en) * | 2017-08-25 | 2020-12-22 | Versum Materials Us, Llc | Etching solution for selectively removing tantalum nitride over titanium nitride during manufacture of a semiconductor device |
US10541317B2 (en) * | 2018-03-01 | 2020-01-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method of forming a metal gate using monolayers |
JP2020202320A (ja) * | 2019-06-12 | 2020-12-17 | 関東化学株式会社 | 過酸化水素分解抑制剤 |
US11499099B2 (en) * | 2019-09-10 | 2022-11-15 | Fujifilm Electronic Materials U.S.A., Inc. | Etching composition |
KR20210100258A (ko) * | 2020-02-05 | 2021-08-17 | 삼성전자주식회사 | 식각 조성물 및 이를 이용한 반도체 소자의 제조 방법 |
-
2020
- 2020-03-11 JP JP2020041546A patent/JP7449127B2/ja active Active
-
2021
- 2021-01-12 TW TW110101078A patent/TWI827902B/zh active
- 2021-02-22 CN CN202110198133.4A patent/CN113388837A/zh active Pending
- 2021-03-04 US US17/191,841 patent/US11908938B2/en active Active
- 2021-03-10 KR KR1020210031297A patent/KR102573057B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050250339A1 (en) | 2004-05-06 | 2005-11-10 | Shea Kevin R | Methods of removing metal-containing materials |
US20180148645A1 (en) | 2016-11-29 | 2018-05-31 | Samsung Electronics Co., Ltd. | Etching composition and method for fabricating semiconductor device by using the same |
WO2018181896A1 (ja) | 2017-03-31 | 2018-10-04 | 関東化學株式会社 | チタン層またはチタン含有層のエッチング液組成物およびエッチング方法 |
JP2019061978A (ja) | 2017-09-22 | 2019-04-18 | 株式会社Screenホールディングス | 基板処理方法および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
TWI827902B (zh) | 2024-01-01 |
JP2021145009A (ja) | 2021-09-24 |
KR102573057B1 (ko) | 2023-08-31 |
US20210288172A1 (en) | 2021-09-16 |
TW202200842A (zh) | 2022-01-01 |
US11908938B2 (en) | 2024-02-20 |
CN113388837A (zh) | 2021-09-14 |
KR20210114885A (ko) | 2021-09-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7449127B2 (ja) | 基板処理液、基板処理方法および基板処理装置 | |
JP7170578B2 (ja) | 基板処理方法および基板処理装置 | |
US10403518B2 (en) | Substrate processing method, substrate processing apparatus and recording medium | |
JP4895256B2 (ja) | 基板の表面処理方法 | |
WO2018147008A1 (ja) | 基板処理方法および基板処理装置 | |
TWI769416B (zh) | 基板處理方法及基板處理裝置 | |
JP4236109B2 (ja) | 基板処理方法及び基板処理装置 | |
WO2021054021A1 (ja) | 基板処理方法、基板処理装置および基板処理液 | |
WO2023162512A1 (ja) | 基板処理液、基板処理方法および基板処理装置 | |
WO2020195695A1 (ja) | 基板処理装置、基板処理方法および半導体製造方法 | |
WO2020044789A1 (ja) | 基板処理方法および基板処理装置 | |
TWI795990B (zh) | 基板處理方法以及基板處理裝置 | |
WO2022044639A1 (ja) | 基板処理方法および基板処理装置 | |
WO2023112673A1 (ja) | 基板処理方法 | |
WO2022254951A1 (ja) | 基板処理方法および昇華乾燥用処理剤 | |
US20230272973A1 (en) | Substrate processing liquid, substrate processing method, and substrate processing apparatus | |
JP2023123998A (ja) | 基板処理液の精製方法および精製装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221219 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20230929 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231003 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231129 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240227 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240301 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7449127 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |