SG11201908791SA - Etchant composition for etching titanium layer or titanium-containing layer, and etching method - Google Patents
Etchant composition for etching titanium layer or titanium-containing layer, and etching methodInfo
- Publication number
- SG11201908791SA SG11201908791SA SG11201908791SA SG11201908791SA SG 11201908791S A SG11201908791S A SG 11201908791SA SG 11201908791S A SG11201908791S A SG 11201908791SA SG 11201908791S A SG11201908791S A SG 11201908791SA
- Authority
- SG
- Singapore
- Prior art keywords
- titanium
- layer
- etching
- etchant composition
- containing layer
- Prior art date
Links
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052719 titanium Inorganic materials 0.000 title abstract 7
- 239000010936 titanium Substances 0.000 title abstract 7
- 239000000203 mixture Substances 0.000 title abstract 6
- 238000005530 etching Methods 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910001069 Ti alloy Inorganic materials 0.000 abstract 1
- -1 ammonium ions Chemical class 0.000 abstract 1
- 150000007514 bases Chemical class 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/20—Acidic compositions for etching aluminium or alloys thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/38—Alkaline compositions for etching refractory metals
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Weting (AREA)
- ing And Chemical Polishing (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Provided are: an etchant composition for titanium or titanium alloy, the etchant composition being used for selectively etching a titanium layer or titanium-containing layer formed on an oxide semiconductor layer; and an etching method using said etchant composition. The etchant composition according to the present invention, which is used for etching a titanium layer or titanium-containing layer on an oxide semiconductor, comprises: a compound containing ammonium ions; hydrogen peroxide; and a basic compound, wherein the etchant composition has a pH of 7-11. [No suitable figure]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2017071076 | 2017-03-31 | ||
PCT/JP2018/013603 WO2018181896A1 (en) | 2017-03-31 | 2018-03-30 | Etchant composition for etching titanium layer or titanium-containing layer, and etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201908791SA true SG11201908791SA (en) | 2019-10-30 |
Family
ID=63678051
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201908791S SG11201908791SA (en) | 2017-03-31 | 2018-03-30 | Etchant composition for etching titanium layer or titanium-containing layer, and etching method |
Country Status (7)
Country | Link |
---|---|
US (1) | US10920326B2 (en) |
JP (1) | JP7220142B2 (en) |
KR (1) | KR102527728B1 (en) |
CN (1) | CN110462799B (en) |
SG (1) | SG11201908791SA (en) |
TW (1) | TWI808965B (en) |
WO (1) | WO2018181896A1 (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020202320A (en) * | 2019-06-12 | 2020-12-17 | 関東化学株式会社 | Hydrogen peroxide decomposition inhibitor |
KR20210100258A (en) * | 2020-02-05 | 2021-08-17 | 삼성전자주식회사 | Etching composition and method for manufacturing semiconductor device using the same |
JP7449127B2 (en) | 2020-03-11 | 2024-03-13 | 株式会社Screenホールディングス | Substrate processing liquid, substrate processing method, and substrate processing equipment |
EP4136273A4 (en) * | 2020-04-14 | 2024-05-01 | Entegris, Inc. | Method and composition for etching molybdenum |
CN111893488A (en) * | 2020-08-04 | 2020-11-06 | 深圳市乾行达科技有限公司 | Etching solution and preparation method thereof |
TW202208323A (en) * | 2020-08-07 | 2022-03-01 | 日商德山股份有限公司 | Processing liquid for semiconductor wafers |
CN114318343A (en) | 2020-09-29 | 2022-04-12 | 上海飞凯材料科技股份有限公司 | Etching solution and application thereof |
KR102444064B1 (en) * | 2021-08-23 | 2022-09-16 | 백영기 | Titanium alloy thin film etching composition as under bump metal layer of gold bump process, and method for etching titanium alloy thin film as under bump metal layer using the same |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5344051B2 (en) | 1973-11-22 | 1978-11-25 | ||
US5071510A (en) * | 1989-09-22 | 1991-12-10 | Robert Bosch Gmbh | Process for anisotropic etching of silicon plates |
JP4661005B2 (en) | 2000-09-05 | 2011-03-30 | 和光純薬工業株式会社 | Etching agent for Ti film and etching method |
JP4471094B2 (en) | 2004-05-11 | 2010-06-02 | 三菱瓦斯化学株式会社 | Titanium or titanium alloy etchant |
US8658053B2 (en) * | 2005-06-24 | 2014-02-25 | Mitsubishi Gas Chemical Company, Inc. | Etching composition for metal material and method for manufacturing semiconductor device by using same |
US20100320457A1 (en) * | 2007-11-22 | 2010-12-23 | Masahito Matsubara | Etching solution composition |
EP2234145B1 (en) | 2007-12-21 | 2013-02-20 | Wako Pure Chemical Industries, Ltd. | Etching agent, etching method and liquid for preparing etching agent |
KR101282177B1 (en) | 2008-09-09 | 2013-07-04 | 쇼와 덴코 가부시키가이샤 | Etchant for titanium-based metal, tungsten-based metal, titanium-tungsten-based metal or nitrides thereof |
JP5396514B2 (en) | 2011-06-30 | 2014-01-22 | 富士フイルム株式会社 | Etching method, etching solution used therefor, and method for manufacturing semiconductor substrate product using the same |
JP6066552B2 (en) * | 2011-12-06 | 2017-01-25 | 関東化學株式会社 | Cleaning composition for electronic devices |
KR102102792B1 (en) * | 2011-12-28 | 2020-05-29 | 엔테그리스, 아이엔씨. | Compositions and methods for selectively etching titanium nitride |
US8835326B2 (en) * | 2012-01-04 | 2014-09-16 | International Business Machines Corporation | Titanium-nitride removal |
EP2875521B1 (en) * | 2012-07-20 | 2020-03-11 | FUJIFILM Corporation | Etching method, and method of producing semiconductor substrate product and semiconductor device using the same |
JP6198384B2 (en) | 2012-11-28 | 2017-09-20 | 富士フイルム株式会社 | Semiconductor substrate etching method and semiconductor device manufacturing method |
EP3004287B1 (en) * | 2013-06-06 | 2021-08-18 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
US9845538B2 (en) | 2013-07-05 | 2017-12-19 | Wako Pure Chemical Industries, Ltd. | Etching agent, etching method and etching agent preparation liquid |
US20150104952A1 (en) * | 2013-10-11 | 2015-04-16 | Ekc Technology, Inc. | Method and composition for selectively removing metal hardmask and other residues from semiconductor device substrates comprising low-k dielectric material and copper |
CN105899713B (en) | 2014-01-14 | 2018-01-12 | 塞克姆公司 | Selective metal/metal oxide lithographic method |
KR102150513B1 (en) * | 2014-03-13 | 2020-09-01 | 동우 화인켐 주식회사 | Etching solution composition for copper layer and titanium layer and method of preparing array substrate for liquid crystal display using the same |
JP2016027186A (en) | 2014-06-24 | 2016-02-18 | 東京応化工業株式会社 | Stripping solution for titanium or titanium compound and wiring formation method |
JP6657770B2 (en) | 2014-11-27 | 2020-03-04 | 三菱瓦斯化学株式会社 | Liquid composition and etching method using the same |
JP6531612B2 (en) | 2014-11-27 | 2019-06-19 | 三菱瓦斯化学株式会社 | Liquid composition and etching method using the same |
US9976111B2 (en) * | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
-
2018
- 2018-03-30 CN CN201880020746.5A patent/CN110462799B/en active Active
- 2018-03-30 WO PCT/JP2018/013603 patent/WO2018181896A1/en active Application Filing
- 2018-03-30 JP JP2019510243A patent/JP7220142B2/en active Active
- 2018-03-30 US US16/497,465 patent/US10920326B2/en active Active
- 2018-03-30 SG SG11201908791S patent/SG11201908791SA/en unknown
- 2018-03-30 KR KR1020197032112A patent/KR102527728B1/en active IP Right Grant
- 2018-03-30 TW TW107111086A patent/TWI808965B/en active
Also Published As
Publication number | Publication date |
---|---|
CN110462799A (en) | 2019-11-15 |
TW201842233A (en) | 2018-12-01 |
KR102527728B1 (en) | 2023-04-28 |
WO2018181896A1 (en) | 2018-10-04 |
KR20190133749A (en) | 2019-12-03 |
JPWO2018181896A1 (en) | 2020-02-27 |
CN110462799B (en) | 2023-12-26 |
US20200024750A1 (en) | 2020-01-23 |
US10920326B2 (en) | 2021-02-16 |
JP7220142B2 (en) | 2023-02-09 |
TWI808965B (en) | 2023-07-21 |
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