SG11201809540RA - Stripping compositions for removing photoresists from semiconductor substrates - Google Patents

Stripping compositions for removing photoresists from semiconductor substrates

Info

Publication number
SG11201809540RA
SG11201809540RA SG11201809540RA SG11201809540RA SG11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA SG 11201809540R A SG11201809540R A SG 11201809540RA
Authority
SG
Singapore
Prior art keywords
international
pct
compositions
english
semiconductor substrates
Prior art date
Application number
SG11201809540RA
Other languages
English (en)
Inventor
Atsushi Mizutani
William A Wojtczak
Yasuo Sugishima
Original Assignee
Fujifilm Electronic Materials Usa Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Electronic Materials Usa Inc filed Critical Fujifilm Electronic Materials Usa Inc
Publication of SG11201809540RA publication Critical patent/SG11201809540RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/0005—Other compounding ingredients characterised by their effect
    • C11D3/0073—Anticorrosion compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2003—Alcohols; Phenols
    • C11D3/2065—Polyhydric alcohols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2082—Polycarboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/20—Organic compounds containing oxygen
    • C11D3/2075—Carboxylic acids-salts thereof
    • C11D3/2086—Hydroxy carboxylic acids-salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/28—Heterocyclic compounds containing nitrogen in the ring
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/30—Amines; Substituted amines ; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/34—Organic compounds containing sulfur
    • C11D3/3427—Organic compounds containing sulfur containing thiol, mercapto or sulfide groups, e.g. thioethers or mercaptales
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/43—Solvents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Detergent Compositions (AREA)
SG11201809540RA 2016-05-23 2017-05-17 Stripping compositions for removing photoresists from semiconductor substrates SG11201809540RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201662340204P 2016-05-23 2016-05-23
PCT/US2017/033041 WO2017205134A1 (en) 2016-05-23 2017-05-17 Stripping compositions for removing photoresists from semiconductor substrates

Publications (1)

Publication Number Publication Date
SG11201809540RA true SG11201809540RA (en) 2018-12-28

Family

ID=58772728

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201809540RA SG11201809540RA (en) 2016-05-23 2017-05-17 Stripping compositions for removing photoresists from semiconductor substrates

Country Status (9)

Country Link
US (2) US10266799B2 (zh)
EP (2) EP3537218A1 (zh)
JP (1) JP6813596B2 (zh)
KR (1) KR102363336B1 (zh)
CN (1) CN109195720B (zh)
IL (2) IL292944B2 (zh)
SG (1) SG11201809540RA (zh)
TW (1) TWI787184B (zh)
WO (1) WO2017205134A1 (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109195720B (zh) * 2016-05-23 2021-10-29 富士胶片电子材料美国有限公司 用于从半导体基板去除光刻胶的剥离组合物
CN107026120B (zh) * 2017-03-30 2019-07-23 深圳市华星光电半导体显示技术有限公司 一种阵列基板的制作方法
US11175587B2 (en) * 2017-09-29 2021-11-16 Versum Materials Us, Llc Stripper solutions and methods of using stripper solutions
CN111448520B (zh) * 2017-12-08 2023-11-17 汉高股份有限及两合公司 光刻胶剥离剂组合物
US11168288B2 (en) * 2018-02-14 2021-11-09 Merck Patent Gmbh Photoresist remover compositions
WO2020040042A1 (ja) * 2018-08-21 2020-02-27 富士フイルム株式会社 薬液、薬液収容体
US11209736B2 (en) * 2018-10-25 2021-12-28 Taiwan Semiconductor Manufacturing Company Ltd. Method for cleaning substrate, method for manufacturing photomask and method for cleaning photomask
IL287327B1 (en) * 2019-04-24 2024-07-01 Fujifilm Electronic Mat Usa Inc Preparations for removing materials that protect against light from semiconductor substrates
WO2020223106A1 (en) * 2019-05-01 2020-11-05 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
US11268025B2 (en) 2019-06-13 2022-03-08 Fujifilm Electronic Materials U.S.A., Inc. Etching compositions
US20220365440A1 (en) * 2019-08-30 2022-11-17 Dow Global Technologies Llc Photoresist stripping composition
CN111054358B (zh) * 2019-12-06 2022-02-01 西南石油大学 一种铜镍锡水滑石催化剂及其制备方法
CN113009793A (zh) * 2019-12-19 2021-06-22 安集微电子科技（上海）股份有限公司 一种去除光刻胶残留物的清洗液
JP2021152585A (ja) * 2020-03-24 2021-09-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
US11378886B2 (en) * 2020-09-29 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removing resist layer, and method of manufacturing semiconductor
CN113275323B (zh) * 2021-05-14 2022-06-24 云谷（固安）科技有限公司 液态胶体分离方法和液态胶体分离系统
CN113921383B (zh) 2021-09-14 2022-06-03 浙江奥首材料科技有限公司 一种铜表面钝化组合物、其用途及包含其的光刻胶剥离液
KR20240121812A (ko) * 2021-12-15 2024-08-09 버슘머트리얼즈 유에스, 엘엘씨 구리 부식 억제제를 함유한 기판으로부터 포토레지스트 및 에칭 잔류물을 제거하기 위한 조성물 및 이의 용도
CN115874184B (zh) * 2022-11-30 2024-10-18 上海富柏化工有限公司 一种有机去膜液及其制备方法
CN117872693B (zh) * 2024-03-13 2024-07-12 深圳市松柏科工股份有限公司 正胶剥离液、正胶剥离液的制备方法及其应用

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5665688A (en) * 1996-01-23 1997-09-09 Olin Microelectronics Chemicals, Inc. Photoresist stripping composition
JP2002107953A (ja) * 2000-09-28 2002-04-10 Mitsubishi Paper Mills Ltd 平版印刷版の現像処理方法
JP2003195517A (ja) 2001-12-14 2003-07-09 Shipley Co Llc フォトレジスト用現像液
JP3738992B2 (ja) * 2001-12-27 2006-01-25 東京応化工業株式会社 ホトレジスト用剥離液
US6717019B2 (en) 2002-01-30 2004-04-06 Air Products And Chemicals, Inc. Glycidyl ether-capped acetylenic diol ethoxylate surfactants
US8338087B2 (en) * 2004-03-03 2012-12-25 Advanced Technology Materials, Inc Composition and process for post-etch removal of photoresist and/or sacrificial anti-reflective material deposited on a substrate
KR100617855B1 (ko) * 2004-04-30 2006-08-28 산요가세이고교 가부시키가이샤 알칼리 세정제
US20060063687A1 (en) 2004-09-17 2006-03-23 Minsek David W Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate
WO2006056298A1 (en) 2004-11-25 2006-06-01 Basf Aktiengesellschaft Resist stripper and residue remover for cleaning copper surfaces in semiconductor processing
US20060154186A1 (en) * 2005-01-07 2006-07-13 Advanced Technology Materials, Inc. Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings
KR101101104B1 (ko) * 2006-08-24 2012-01-03 다이킨 고교 가부시키가이샤 반도체 드라이 프로세스 후의 잔사 제거액 및 그것을 이용한 잔사 제거 방법
SG175559A1 (en) * 2006-09-25 2011-11-28 Advanced Tech Materials Compositions and methods for the removal of photoresist for a wafer rework application
KR20100051839A (ko) * 2007-08-02 2010-05-18 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 마이크로전자 장치로부터 잔사를 제거하기 위한 플루오라이드 비-함유 조성물
US8551682B2 (en) 2007-08-15 2013-10-08 Dynaloy, Llc Metal conservation with stripper solutions containing resorcinol
JP2009069505A (ja) * 2007-09-13 2009-04-02 Tosoh Corp レジスト除去用洗浄液及び洗浄方法
JP2009075285A (ja) * 2007-09-20 2009-04-09 Fujifilm Corp 半導体デバイスの剥離液、及び、剥離方法
US8357646B2 (en) * 2008-03-07 2013-01-22 Air Products And Chemicals, Inc. Stripper for dry film removal
US8361237B2 (en) * 2008-12-17 2013-01-29 Air Products And Chemicals, Inc. Wet clean compositions for CoWP and porous dielectrics
KR100950779B1 (ko) 2009-08-25 2010-04-02 엘티씨 (주) Ｔｆｔ―ｌｃｄ 통합공정용 포토레지스트 박리제 조성물
KR101169332B1 (ko) 2010-05-12 2012-07-30 주식회사 이엔에프테크놀로지 포토레지스트 박리액 조성물
JP5508158B2 (ja) * 2010-06-22 2014-05-28 富士フイルム株式会社 洗浄組成物、洗浄方法、及び、半導体装置の製造方法
US9063431B2 (en) * 2010-07-16 2015-06-23 Advanced Technology Materials, Inc. Aqueous cleaner for the removal of post-etch residues
CN102466986A (zh) * 2010-11-09 2012-05-23 苏州瑞红电子化学品有限公司 一种防腐蚀碱性显影液组合物
US8530143B2 (en) * 2010-11-18 2013-09-10 Eastman Kodak Company Silicate-free developer compositions
WO2016076031A1 (ja) * 2014-11-13 2016-05-19 三菱瓦斯化学株式会社 タングステンを含む材料のダメージを抑制した半導体素子の洗浄液、およびこれを用いた半導体素子の洗浄方法
TWI690780B (zh) 2014-12-30 2020-04-11 美商富士軟片電子材料美國股份有限公司 用於自半導體基板去除光阻之剝離組成物
CN109195720B (zh) 2016-05-23 2021-10-29 富士胶片电子材料美国有限公司 用于从半导体基板去除光刻胶的剥离组合物

Also Published As

Publication number Publication date
US20170335252A1 (en) 2017-11-23
KR102363336B1 (ko) 2022-02-15
IL292944A (en) 2022-07-01
KR20190010571A (ko) 2019-01-30
US20190233771A1 (en) 2019-08-01
JP2019518986A (ja) 2019-07-04
WO2017205134A1 (en) 2017-11-30
JP6813596B2 (ja) 2021-01-13
US10266799B2 (en) 2019-04-23
US10947484B2 (en) 2021-03-16
CN109195720A (zh) 2019-01-11
TW201816101A (zh) 2018-05-01
IL292944B2 (en) 2023-06-01
IL262630A (en) 2018-12-31
IL262630B (en) 2022-06-01
CN109195720B (zh) 2021-10-29
EP3537218A1 (en) 2019-09-11
EP3249470A1 (en) 2017-11-29
EP3249470B1 (en) 2019-04-03
TWI787184B (zh) 2022-12-21

Similar Documents

Publication Publication Date Title
SG11201809540RA (en) Stripping compositions for removing photoresists from semiconductor substrates
SG11201908616PA (en) Cleaning compositions for removing residues on semiconductor substrates
SG11201908617QA (en) Surface treatment methods and compositions therefor
SG11201407650VA (en) Composition and process for stripping photoresist from a surface including titanium nitride
SG11201901450QA (en) Methods of forming semiconductor device structures including two-dimensional material structures
SG11201804807VA (en) Computer architecture and method for modifying data intake parameters based on a predictive model
SG11201806578XA (en) Self-alignment of metal and via using selective deposition
SG11201808666PA (en) Charge extraction from ferroelectric memory cell
SG11201906424WA (en) Mitigation of inaccuracies related to grating asymmetries in scatterometry measurements
SG11201900634VA (en) Chimeric antigen receptor
SG11201803933PA (en) Optical metrology of lithographic processes using asymmetric sub-resolution features to enhance measurement
SG11201903153PA (en) Metal recovery process
SG11201808962RA (en) Method for treating graphene sheets for large-scale transfer using free-float method
SG11201811579VA (en) Chemiluminescent substrates
SG11201907823TA (en) Methods and system for cleaning gas turbine engine
SG11201804115UA (en) Lithographic apparatus and method of operating a lithographic apparatus
SG11201805149XA (en) Compositions comprising 15-hepe and methods of using the same
SG11201809875VA (en) Compositions and methods for treating spinal muscular atrophy
SG11201906686TA (en) Ceramic material comprising a pseudo-cubic phase, a process for preparing and uses of the same
SG11201407536UA (en) Topical pharmaceutical compositions comprising terbinafine and urea
SG11201806393QA (en) Use of gabaa receptor modulators for treatment of itch
SG11201900728SA (en) Composition, system, and method for treating water systems
SG11201810347UA (en) Cleansing composition
SG11201909496YA (en) Photovoltaic module, photovoltaic encapsulant and method of producing a photovoltaic module
SG11201803979PA (en) Sulfur-containing compounds as solvents