SG11201804672QA - Systems and methods for production of low oxygen content silicon - Google Patents

Systems and methods for production of low oxygen content silicon

Info

Publication number
SG11201804672QA
SG11201804672QA SG11201804672QA SG11201804672QA SG11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA SG 11201804672Q A SG11201804672Q A SG 11201804672QA
Authority
SG
Singapore
Prior art keywords
international
missouri
peters
silicon
pearl drive
Prior art date
Application number
SG11201804672QA
Other languages
English (en)
Inventor
Gaurab Samanta
Parthiv Daggolu
Sumeet Bhagavat
Soubir Basak
Nan Zhang
Original Assignee
Globalwafers Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Globalwafers Co Ltd filed Critical Globalwafers Co Ltd
Publication of SG11201804672QA publication Critical patent/SG11201804672QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B30/00—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions
    • C30B30/04—Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions using magnetic fields

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
SG11201804672QA 2015-12-04 2016-12-01 Systems and methods for production of low oxygen content silicon SG11201804672QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562263355P 2015-12-04 2015-12-04
PCT/US2016/064448 WO2017096057A1 (en) 2015-12-04 2016-12-01 Systems and methods for production of low oxygen content silicon

Publications (1)

Publication Number Publication Date
SG11201804672QA true SG11201804672QA (en) 2018-07-30

Family

ID=57570461

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201804672QA SG11201804672QA (en) 2015-12-04 2016-12-01 Systems and methods for production of low oxygen content silicon

Country Status (8)

Country Link
US (5) US10745823B2 (ja)
EP (2) EP3384072B1 (ja)
JP (3) JP6987057B2 (ja)
KR (3) KR102660001B1 (ja)
CN (1) CN109154103B (ja)
SG (1) SG11201804672QA (ja)
TW (1) TWI737656B (ja)
WO (1) WO2017096057A1 (ja)

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KR102660001B1 (ko) 2015-12-04 2024-04-24 글로벌웨이퍼스 씨오., 엘티디. 낮은 산소 함량 실리콘의 제조를 위한 시스템들 및 방법들
JP6642410B2 (ja) * 2016-12-20 2020-02-05 株式会社Sumco シリコン単結晶の製造方法
WO2020076448A1 (en) * 2018-10-12 2020-04-16 Globalwafers Co., Ltd. Dopant concentration control in silicon melt to enhance the ingot quality
CN113825862A (zh) * 2019-04-11 2021-12-21 环球晶圆股份有限公司 后段主体长度具有减小变形的锭的制备工艺
US11414778B2 (en) * 2019-07-29 2022-08-16 Globalwafers Co., Ltd. Production and use of dynamic state charts when growing a single crystal silicon ingot
KR20220044806A (ko) 2019-08-09 2022-04-11 리딩 엣지 이큅먼트 테크놀로지스, 아이엔씨. 산소 농도가 낮은 영역이 있는 리본 또는 웨이퍼의 제조
US11873574B2 (en) 2019-12-13 2024-01-16 Globalwafers Co., Ltd. Systems and methods for production of silicon using a horizontal magnetic field
CN114318499B (zh) * 2020-09-29 2023-07-11 万华化学集团电子材料有限公司 一种大直径半导体硅单晶的生长方法及单晶炉
JP2024515991A (ja) * 2021-04-28 2024-04-11 グローバルウェーハズ カンパニー リミテッド 水平磁場チョクラルスキー法によるシリコンインゴットの製造方法
CN113789567B (zh) * 2021-09-17 2022-11-25 安徽光智科技有限公司 一种大尺寸锗单晶生长方法
CN114855263A (zh) * 2022-04-01 2022-08-05 上海新昇半导体科技有限公司 一种晶体生长方法及生长装置
CN117127252A (zh) * 2022-05-20 2023-11-28 隆基绿能科技股份有限公司 氧含量控制方法、装置、电子设备及存储介质
JP2023184253A (ja) * 2022-06-17 2023-12-28 信越半導体株式会社 シリコン単結晶の製造方法
EP4350055A1 (de) * 2022-10-06 2024-04-10 Siltronic AG Verfahren zur herstellung eines einkristalls aus silizium und halbleiterscheibe aus einkristallinem silizium
US20240240355A1 (en) 2023-01-17 2024-07-18 Globalwafers Co., Ltd. Methods for producing single crystal silicon wafers for insulated gate bipolar transistors

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US5593498A (en) * 1995-06-09 1997-01-14 Memc Electronic Materials, Inc. Apparatus for rotating a crucible of a crystal pulling machine
CN1178844A (zh) 1996-08-08 1998-04-15 Memc电子材料有限公司 切克劳斯基法生长硅的温度和时间关系的控制方法
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
JPH1072277A (ja) * 1996-08-30 1998-03-17 Mitsubishi Materials Corp シリコン単結晶の育成方法及びその装置
JP3228173B2 (ja) * 1997-03-27 2001-11-12 住友金属工業株式会社 単結晶製造方法
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JP2009292654A (ja) * 2008-06-02 2009-12-17 Sumco Corp シリコン単結晶引上げ方法
DE102008046617B4 (de) * 2008-09-10 2016-02-04 Siltronic Ag Halbleiterscheibe aus einkristallinem Silizium und Verfahren für deren Herstellung
JP2010222241A (ja) * 2009-02-25 2010-10-07 Sumco Corp Ｉｇｂｔ用シリコン単結晶ウェーハ及びｉｇｂｔ用シリコン単結晶ウェーハの製造方法
JP6278591B2 (ja) * 2012-11-13 2018-02-14 株式会社Sumco 半導体エピタキシャルウェーハの製造方法、半導体エピタキシャルウェーハ、および固体撮像素子の製造方法
JP5831436B2 (ja) * 2012-12-11 2015-12-09 信越半導体株式会社 シリコン単結晶の製造方法
WO2014190165A2 (en) 2013-05-24 2014-11-27 Sunedison Semiconductor Limited Methods for producing low oxygen silicon ingots
JP5974978B2 (ja) * 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法
KR102660001B1 (ko) 2015-12-04 2024-04-24 글로벌웨이퍼스 씨오., 엘티디. 낮은 산소 함량 실리콘의 제조를 위한 시스템들 및 방법들

Also Published As

Publication number Publication date
EP3384072B1 (en) 2021-02-17
TWI737656B (zh) 2021-09-01
EP3384072A1 (en) 2018-10-10
CN109154103B (zh) 2024-05-28
US20210348298A1 (en) 2021-11-11
US20230250551A1 (en) 2023-08-10
KR102660001B1 (ko) 2024-04-24
JP2023052405A (ja) 2023-04-11
JP2018535917A (ja) 2018-12-06
TW201723244A (zh) 2017-07-01
KR20180101358A (ko) 2018-09-12
KR20240056775A (ko) 2024-04-30
US11136691B2 (en) 2021-10-05
US11668020B2 (en) 2023-06-06
US20180355509A1 (en) 2018-12-13
US20200392643A1 (en) 2020-12-17
US10745823B2 (en) 2020-08-18
CN109154103A (zh) 2019-01-04
KR102455419B1 (ko) 2022-10-17
KR20220143159A (ko) 2022-10-24
JP7556989B2 (ja) 2024-09-26
EP3831987A1 (en) 2021-06-09
WO2017096057A1 (en) 2017-06-08
US12037699B2 (en) 2024-07-16
US20240247402A1 (en) 2024-07-25
JP6987057B2 (ja) 2021-12-22
JP2022033854A (ja) 2022-03-02

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