SG11201704867TA - Wafer group, wafer manufacturing device, and wafer manufacturing method - Google Patents

Wafer group, wafer manufacturing device, and wafer manufacturing method

Info

Publication number
SG11201704867TA
SG11201704867TA SG11201704867TA SG11201704867TA SG11201704867TA SG 11201704867T A SG11201704867T A SG 11201704867TA SG 11201704867T A SG11201704867T A SG 11201704867TA SG 11201704867T A SG11201704867T A SG 11201704867TA SG 11201704867T A SG11201704867T A SG 11201704867TA
Authority
SG
Singapore
Prior art keywords
wafer
wafer manufacturing
group
manufacturing
manufacturing device
Prior art date
Application number
SG11201704867TA
Other languages
English (en)
Inventor
Shinya Shoji
Makoto Ishii
Kazuyuki Umetsu
Junji Sugiura
Original Assignee
Dowa Electronics Materials Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Electronics Materials Co filed Critical Dowa Electronics Materials Co
Publication of SG11201704867TA publication Critical patent/SG11201704867TA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
    • B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
    • B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02013—Grinding, lapping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02021—Edge treatment, chamfering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02035—Shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/10—Measuring as part of the manufacturing process
    • H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
SG11201704867TA 2014-12-18 2015-12-09 Wafer group, wafer manufacturing device, and wafer manufacturing method SG11201704867TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014256502A JP6063436B2 (ja) 2014-12-18 2014-12-18 ウェハ群、ウェハの製造装置、およびウェハの製造方法
PCT/JP2015/084529 WO2016098662A1 (ja) 2014-12-18 2015-12-09 ウェハ群、ウェハの製造装置、およびウェハの製造方法

Publications (1)

Publication Number Publication Date
SG11201704867TA true SG11201704867TA (en) 2017-07-28

Family

ID=56126554

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201704867TA SG11201704867TA (en) 2014-12-18 2015-12-09 Wafer group, wafer manufacturing device, and wafer manufacturing method

Country Status (8)

Country Link
US (1) US10319807B2 (de)
JP (1) JP6063436B2 (de)
KR (1) KR102386865B1 (de)
CN (2) CN113172776B (de)
DE (1) DE112015005680B4 (de)
SG (1) SG11201704867TA (de)
TW (1) TWI681450B (de)
WO (1) WO2016098662A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3476983A4 (de) * 2017-04-28 2020-04-01 JX Nippon Mining & Metals Corporation Halbleiterwafer und verfahren zum polieren von halbleiterwafern
CN111223812B (zh) * 2018-11-27 2022-07-12 昆山微电子技术研究院 一种晶圆键合加压装置及晶圆键合设备
CN110098117A (zh) * 2019-05-15 2019-08-06 上海新昇半导体科技有限公司 提高晶圆抛光平坦度的方法及硅片加工方法
JP7146988B1 (ja) * 2021-03-19 2022-10-04 Ｄｏｗａエレクトロニクス株式会社 ＧａＡｓウエハの製造方法およびＧａＡｓウエハ群

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62154614A (ja) * 1985-12-27 1987-07-09 Toshiba Corp 接合型半導体基板の製造方法
JPS63228721A (ja) * 1987-03-18 1988-09-22 Toshiba Corp Ｇａｐ単結晶ウエ−ハの製造方法
JPH0637024B2 (ja) * 1987-08-23 1994-05-18 エムテック株式会社 オリエンテ−ションフラットの研削方法及び装置
JPH05259016A (ja) * 1992-03-12 1993-10-08 Mitsubishi Electric Corp ウエハ作製用基板及び半導体ウエハの製造方法
US5557214A (en) * 1995-02-06 1996-09-17 Barnett; C. Kenneth Micro beam probe semiconductor test interface
JPH08222798A (ja) * 1995-02-15 1996-08-30 Mitsubishi Electric Corp 半導体レーザの製造方法
JP3461449B2 (ja) * 1998-10-13 2003-10-27 シャープ株式会社 半導体素子の製造方法
JP2000135663A (ja) * 1998-10-30 2000-05-16 Tottori Univ 被加工物自転型ワイヤソー及びウェハ製造方法
JP2001300869A (ja) 2000-04-19 2001-10-30 Sony Corp ウエハ劈開用のけがき線形成装置
JP4455804B2 (ja) * 2002-05-08 2010-04-21 株式会社ワイ・ワイ・エル インゴットの切断方法と切断装置及びウェーハ並びに太陽電池の製造方法
CN1723547A (zh) * 2003-06-20 2006-01-18 住友电气工业株式会社 制造单晶半导体晶片的方法及实施该方法的激光加工设备
JP2005243976A (ja) 2004-02-27 2005-09-08 Hitachi Cable Ltd 半導体結晶
JP2006066643A (ja) * 2004-08-26 2006-03-09 Sumitomo Electric Ind Ltd 半導体ウェハの劈開装置及び方法
JP4525353B2 (ja) * 2005-01-07 2010-08-18 住友電気工業株式会社 Ｉｉｉ族窒化物基板の製造方法
JP2006216788A (ja) * 2005-02-03 2006-08-17 Hitachi Cable Ltd 半導体レーザー用単結晶ウェハ
EP1806770A4 (de) * 2005-07-21 2009-02-25 Sumitomo Electric Industries Galliumnitridwafer
JP2007073761A (ja) * 2005-09-07 2007-03-22 Sumitomo Electric Ind Ltd 窒化物半導体基板及び窒化物半導体基板の加工方法
JP2008042157A (ja) * 2006-07-12 2008-02-21 Sumitomo Electric Ind Ltd ３族窒化物基板の製造方法、および３族窒化物基板
JP2011060985A (ja) * 2009-09-10 2011-03-24 Murata Mfg Co Ltd 電子部品の製造方法
JP5728359B2 (ja) * 2010-12-21 2015-06-03 三星ダイヤモンド工業株式会社 薄膜太陽電池用溝加工ツール及び薄膜太陽電池の溝加工装置
US8471366B2 (en) * 2011-11-30 2013-06-25 Sumitomo Electric Industries, Ltd. Nitride semiconductor substrate
JP5472341B2 (ja) * 2012-02-15 2014-04-16 三星ダイヤモンド工業株式会社 板材分割装置及び板材分割方法
JP6071611B2 (ja) * 2013-02-13 2017-02-01 Ｍｉｐｏｘ株式会社 オリエンテーションフラット等切り欠き部を有する、結晶材料から成るウエハの周縁を、研磨テープを使用して研磨することにより円形ウエハを製造する方法
US10186489B2 (en) * 2013-08-20 2019-01-22 National Institute Of Advanced Industrial Science And Technology Process substrate with crystal orientation mark, method of detecting crystal orientation, and reading device of crystal orientation mark

Also Published As

Publication number Publication date
CN113172776B (zh) 2022-11-15
CN107112227B (zh) 2021-06-04
DE112015005680T5 (de) 2017-08-31
CN113172776A (zh) 2021-07-27
KR102386865B1 (ko) 2022-04-14
DE112015005680B4 (de) 2022-12-29
JP6063436B2 (ja) 2017-01-18
CN107112227A (zh) 2017-08-29
JP2016119335A (ja) 2016-06-30
US10319807B2 (en) 2019-06-11
TWI681450B (zh) 2020-01-01
KR20170096031A (ko) 2017-08-23
TW201633394A (zh) 2016-09-16
US20180026092A1 (en) 2018-01-25
WO2016098662A1 (ja) 2016-06-23

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