SG11201610089QA - Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder - Google Patents

Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder

Info

Publication number
SG11201610089QA
SG11201610089QA SG11201610089QA SG11201610089QA SG11201610089QA SG 11201610089Q A SG11201610089Q A SG 11201610089QA SG 11201610089Q A SG11201610089Q A SG 11201610089QA SG 11201610089Q A SG11201610089Q A SG 11201610089QA SG 11201610089Q A SG11201610089Q A SG 11201610089QA
Authority
SG
Singapore
Prior art keywords
silicon nitride
nitride powder
production method
sintered body
circuit substrate
Prior art date
Application number
SG11201610089QA
Other languages
English (en)
Inventor
Takeshi Yamao
Michio Honda
Shinsuke Jida
Original Assignee
Ube Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries filed Critical Ube Industries
Publication of SG11201610089QA publication Critical patent/SG11201610089QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00Nitrogen; Compounds thereof
    • C01B21/06Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/626Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
    • C04B35/63Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
    • C04B35/6303Inorganic additives
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0201Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0306Inorganic insulating substrates, e.g. ceramic, glass
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/61Micrometer sized, i.e. from 1-100 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00Particle morphology
    • C01P2004/60Particles characterised by their size
    • C01P2004/62Submicrometer sized, i.e. from 0.1-1 micrometer
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00Physical properties of inorganic compounds
    • C01P2006/12Surface area
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206Magnesium oxides or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225Yttrium oxide or oxide-forming salts thereof
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/38Non-oxide ceramic constituents or additives
    • C04B2235/3852Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
    • C04B2235/3873Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
    • C04B2235/3882Beta silicon nitrides
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9607Thermal properties, e.g. thermal expansion coefficient

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Products (AREA)
SG11201610089QA 2014-06-16 2015-06-16 Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder SG11201610089QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014123330 2014-06-16
PCT/JP2015/067309 WO2015194552A1 (fr) 2014-06-16 2015-06-16 Poudre de nitrure de silicium, corps fritté en nitrure de silicium et substrat de circuit, et procédé de production de ladite poudre de nitrure de silicium

Publications (1)

Publication Number Publication Date
SG11201610089QA true SG11201610089QA (en) 2017-01-27

Family

ID=54935535

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201610089QA SG11201610089QA (en) 2014-06-16 2015-06-16 Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder

Country Status (8)

Country Link
US (1) US10399854B2 (fr)
EP (1) EP3156366A4 (fr)
JP (1) JP6292306B2 (fr)
KR (1) KR20170021282A (fr)
CN (1) CN106470939B (fr)
SG (1) SG11201610089QA (fr)
TW (1) TW201605763A (fr)
WO (1) WO2015194552A1 (fr)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114380603B (zh) * 2016-03-28 2022-11-29 日立金属株式会社 氮化硅烧结基板的制造方法
JP6690734B2 (ja) * 2016-12-12 2020-04-28 宇部興産株式会社 窒化ケイ素粉末および窒化ケイ素焼結体の製造方法
CN110049946A (zh) * 2016-12-12 2019-07-23 宇部兴产株式会社 氮化硅粉末、多晶硅铸锭用脱模剂及多晶硅铸锭的制造方法
TWI634071B (zh) * 2016-12-12 2018-09-01 日商宇部興產股份有限公司 氮化矽粉末、多晶矽鑄錠用脫模劑及多晶矽鑄錠之製造方法
KR101972234B1 (ko) * 2017-10-25 2019-04-24 금오공과대학교 산학협력단 규소 스크랩을 이용한 반응소결 질화규소 소결체 제조방법 및 이로부터 제조된 반응소결 질화규소 소결체
JP7069967B2 (ja) * 2018-03-29 2022-05-18 Tdk株式会社 放熱基板
CN112912356B (zh) * 2018-11-01 2023-05-02 Ube 株式会社 氮化硅基板的制造方法以及氮化硅基板
CN113614035A (zh) * 2019-03-29 2021-11-05 电化株式会社 氮化硅粉末及其制造方法、以及氮化硅烧结体的制造方法
CN114787105B (zh) * 2019-12-11 2024-03-05 Ube 株式会社 板状的氮化硅质烧结体及其制造方法
JPWO2021200864A1 (fr) * 2020-03-30 2021-10-07
JPWO2021200865A1 (fr) * 2020-03-30 2021-10-07
US20220380258A1 (en) * 2020-10-09 2022-12-01 Daiichi Kigenso Kagaku Kogyo Co., Ltd. Zirconia powder, zirconia sintered body, and method for producing zirconia sintered body
CN112811922B (zh) * 2021-01-20 2021-11-02 中国科学院上海硅酸盐研究所 一种覆铜板的氮化硅陶瓷基片及其制备方法
KR102408533B1 (ko) * 2021-11-25 2022-06-14 주식회사 첨단랩 열계면 물질용 질화규소 충진제 제조 방법

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58199707A (ja) * 1982-05-18 1983-11-21 Ube Ind Ltd 結晶質窒化ケイ素粉末の製法
JPS59207813A (ja) * 1983-05-10 1984-11-26 Ube Ind Ltd 結晶質窒化ケイ素粉末の製法
JPH0829923B2 (ja) * 1989-12-07 1996-03-27 電気化学工業株式会社 窒化ケイ素粉末
US5759481A (en) * 1994-10-18 1998-06-02 Saint-Gobain/Norton Industrial Ceramics Corp. Silicon nitride having a high tensile strength
US5641438A (en) * 1995-01-24 1997-06-24 Bunyan; Michael H. Method for forming an EMI shielding gasket
JP3475614B2 (ja) 1995-12-05 2003-12-08 宇部興産株式会社 シリコンジイミド
DE19746008A1 (de) * 1997-10-20 1999-04-22 Bayer Ag Sinteradditive und Si02-enthaltende Siliciumnitridwerkstoffe, ein Verfahren zu deren Herstellung und deren Verwendung
JP3669406B2 (ja) * 1997-12-16 2005-07-06 宇部興産株式会社 窒化ケイ素粉末
JP3997596B2 (ja) * 1998-04-13 2007-10-24 宇部興産株式会社 窒化ケイ素粉末
JP3900696B2 (ja) 1998-07-30 2007-04-04 宇部興産株式会社 窒化ケイ素粉末焼成用るつぼ
JP3900695B2 (ja) 1998-07-30 2007-04-04 宇部興産株式会社 窒化ケイ素粉末焼成用るつぼ
AU779900B2 (en) * 1999-07-22 2005-02-17 Organogenesis Inc. In vivo induction for enhanced function of isolated hepatocytes
US6472075B1 (en) * 1999-09-08 2002-10-29 Ngk Spark Plug Co., Ltd. Sintered silicon nitride member and ceramic ball
JP2002029849A (ja) 2000-07-14 2002-01-29 Denki Kagaku Kogyo Kk 窒化ケイ素質焼結体とその製造方法及びそれを用いた回路基板
US6613443B2 (en) 2000-10-27 2003-09-02 Kabushiki Kaisha Toshiba Silicon nitride ceramic substrate, silicon nitride ceramic circuit board using the substrate, and method of manufacturing the substrate
JP3797905B2 (ja) 2000-10-27 2006-07-19 株式会社東芝 窒化けい素セラミックス基板およびそれを用いた窒化けい素セラミックス回路基板並びにその製造方法
JP2002265276A (ja) * 2001-03-07 2002-09-18 Hitachi Metals Ltd 窒化ケイ素粉末および窒化ケイ素焼結体
JP4473463B2 (ja) * 2001-03-26 2010-06-02 日本碍子株式会社 窒化珪素多孔体及びその製造方法
JP5268750B2 (ja) * 2009-04-01 2013-08-21 株式会社東芝 耐衝撃部材およびその製造方法
EP2615060A4 (fr) * 2010-08-19 2016-02-24 Ube Industries Poudre de nitrure de silicium pour une matière fluorescente siliconitrure, matière fluorescente sr3al3si13o2n21 et matière fluorescente â-sialon toutes deux obtenues à l'aide de cette poudre, et leurs procédés de fabrication
JP5706671B2 (ja) * 2010-11-15 2015-04-22 独立行政法人産業技術総合研究所 昇華再結晶法による炭化ケイ素単結晶製造用炭化ケイ素粉体及びその製造方法
JP5930637B2 (ja) * 2011-09-28 2016-06-08 デンカ株式会社 離型剤用窒化ケイ素粉末およびその製造方法
JP5862765B2 (ja) 2012-03-28 2016-02-16 宇部興産株式会社 窒化ケイ素粉末の製造方法及び窒化ケイ素粉末、ならびに窒化ケイ素焼結体の製造方法

Also Published As

Publication number Publication date
WO2015194552A1 (fr) 2015-12-23
JPWO2015194552A1 (ja) 2017-04-27
KR20170021282A (ko) 2017-02-27
EP3156366A1 (fr) 2017-04-19
US10399854B2 (en) 2019-09-03
US20170107109A1 (en) 2017-04-20
EP3156366A4 (fr) 2017-11-29
TW201605763A (zh) 2016-02-16
CN106470939B (zh) 2018-09-04
JP6292306B2 (ja) 2018-03-14
CN106470939A (zh) 2017-03-01

Similar Documents

Publication Publication Date Title
SG11201610089QA (en) Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder
SG11201405976RA (en) Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
EP3162778A4 (fr) Procédé de préparation de céramique poreuse, céramique poreuse et cigarette électronique
EP3168862A4 (fr) Substrat semi-conducteur et procédé de fabrication de substrat semi-conducteur
EP3135470A4 (fr) Composant mécanique fritté, dispositif de formation de poudrier, et procédé de formation de poudrier
EP3128547A4 (fr) Interposeur, dispositif à semi-conducteur, procédé de fabrication d'interposeur et procédé de fabrication de dispositif à semi-conducteur
EP3231781A4 (fr) Céramique et son procédé de fabrication
EP3076422A4 (fr) Procédé de fabrication d'élément à semi-conducteur au carbure de silicium
EP3125297A4 (fr) Dispositif semiconducteur au carbure de silicium et son procédé de fabrication
EP3174089A4 (fr) Dispositif et procédé de fabrication de composants à semi-conducteur
GB2551017B (en) Etching gas composition for silicon compound, and etching method
EP3203528A4 (fr) Dispositif à semiconducteur de carbure de silicium, procédé de fabrication de dispositif à semiconducteur de carbure de silicium et procédé de conception de dispositif à semiconducteur de carbure de silicium
SG11201708638PA (en) Method for producing fine silicon powder, and method for producing fine silicon nitride powder
EP2966148A4 (fr) Procédé de production d'un luminophore nitruré, poudre de nitrure de silicium pour luminophore nitruré et luminophore nitruré
SG11201605542RA (en) Semiconductor substrate, semiconductor device and manufacturing method for semiconductor substrate
EP3239262A4 (fr) Composition de polissage, procédé de polissage et procédé de fabrication d'un objet en céramique
EP3101160A4 (fr) Procédé de fabrication de substrat de semi-conducteur
EP3197251A4 (fr) Corps stratifié, substrat pour montage d'élément semi-conducteur, et procédé de fabrication desdits corps et substrat
EP3196904A4 (fr) Composant électronique à semi-conducteur en céramique de type puce
EP3226305A4 (fr) Dispositif à semi-conducteurs au carbure de silicium et son procédé de fabrication
EP3104406A4 (fr) Complexe de carbure de silicium, procédé de fabrication associé, et composant de dissipation thermique utilisant ledit complexe
EP3239263A4 (fr) Composition de polissage, procédé de polissage et procédé de production de pièce de céramique
EP3203816A4 (fr) Procédé de fabrication de substrat de circuit électronique, et substrat de circuit électronique ainsi obtenu
EP3190598A4 (fr) Composant électronique en céramique et son procédé de fabrication
HK1216207A1 (zh) 氮化物半導體層、氮化物半導體裝置和用於製造氮化物半導體層的方法