SG11201405976RA - Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same - Google Patents

Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same

Info

Publication number
SG11201405976RA
SG11201405976RA SG11201405976RA SG11201405976RA SG11201405976RA SG 11201405976R A SG11201405976R A SG 11201405976RA SG 11201405976R A SG11201405976R A SG 11201405976RA SG 11201405976R A SG11201405976R A SG 11201405976RA SG 11201405976R A SG11201405976R A SG 11201405976RA
Authority
SG
Singapore
Prior art keywords
silicon nitride
nitride powder
production method
sintered body
circuit substrate
Prior art date
Application number
SG11201405976RA
Inventor
Koji Shibata
Takuji Ohmaru
Takeshi Yamao
Masataka Fujinaga
Michio Honda
Takayuki Fujii
Original Assignee
Ube Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries filed Critical Ube Industries
Publication of SG11201405976RA publication Critical patent/SG11201405976RA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C01B21/0687—After-treatment, e.g. grinding, purification
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C04B35/593—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering
    • C04B35/5935—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride obtained by pressure sintering obtained by gas pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/80—Compositional purity
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
    • C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30—Constituents and secondary phases not being of a fibrous nature
    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
    • C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
    • C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54—Particle size related information
    • C04B2235/5409—Particle size related information expressed by specific surface values
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/723—Oxygen content
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74—Physical characteristics
    • C04B2235/77—Density
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/29—Coated or structually defined flake, particle, cell, strand, strand portion, rod, filament, macroscopic fiber or mass thereof
    • Y10T428/2982—Particulate matter [e.g., sphere, flake, etc.]
SG11201405976RA 2012-03-28 2013-03-25 Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same SG11201405976RA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012074863 2012-03-28
JP2012251815 2012-11-16
PCT/JP2013/058645 WO2013146713A1 (en) 2012-03-28 2013-03-25 Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same

Publications (1)

Publication Number Publication Date
SG11201405976RA true SG11201405976RA (en) 2014-11-27

Family

ID=49259965

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201405976RA SG11201405976RA (en) 2012-03-28 2013-03-25 Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same

Country Status (8)

Country Link
US (1) US9085462B2 (en)
EP (1) EP2832687B1 (en)
JP (1) JP5862765B2 (en)
KR (1) KR101652616B1 (en)
CN (1) CN104203813B (en)
SG (1) SG11201405976RA (en)
TW (1) TWI573757B (en)
WO (1) WO2013146713A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013147066A1 (en) * 2012-03-29 2013-10-03 宇部興産株式会社 Oxynitride phosphor powder
TWI601805B (en) * 2013-03-08 2017-10-11 宇部興產股份有限公司 Process for producing nitride phosphors, silicon nitride phosphors for nitride phosphors, and nitride phosphors
JP5975176B2 (en) * 2013-07-11 2016-08-23 宇部興産株式会社 Silicon nitride powder for mold release agent of polycrystalline silicon ingot casting mold and manufacturing method thereof, slurry containing silicon nitride powder, casting mold for polycrystalline silicon ingot and manufacturing method thereof, and polycrystalline silicon using the mold Manufacturing method of ingot casting
SG11201606726UA (en) * 2014-02-12 2016-09-29 Ube Industries Polycrystalline silicon powder for slurry and method for producing same, polycrystalline silicon powder slurry for moldrelease material and method for producing same, polycrystalline silicon powder for mold release material, mold release material, and polycrystalline silicon ingot casting mold and method for producing same
KR20170021282A (en) 2014-06-16 2017-02-27 우베 고산 가부시키가이샤 Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder
CN105236363B (en) * 2015-10-12 2018-01-16 陕西阳乐陶瓷材料科技有限公司 A kind of method for preparing the spherical silicon nitride powder of microscale-nanoscale
JP6399252B2 (en) * 2016-03-28 2018-10-03 日立金属株式会社 Circuit board and silicon nitride sintered substrate manufacturing method
US10384941B2 (en) 2017-12-13 2019-08-20 National Chung Shan Institute Of Science And Technology Method for producing spherical silicon nitride powder
US11084761B2 (en) 2018-09-14 2021-08-10 Honeywell International Inc. Method of pressure sintering an environmental barrier coating on a surface of a ceramic substrate
US11827574B2 (en) 2018-09-14 2023-11-28 Honeywell International Inc. Method of pressure sintering an environmental barrier coating on a surface of a ceramic substrate
CN109721370B (en) * 2019-03-05 2022-02-18 青岛瓷兴新材料有限公司 Silicon nitride, ceramic slurry and preparation method
CN113614035A (en) * 2019-03-29 2021-11-05 电化株式会社 Silicon nitride powder, method for producing same, and method for producing silicon nitride sintered body
US20220402826A1 (en) * 2019-11-28 2022-12-22 Tokuyama Corporation Method for manufacturing silicon nitride sintered compact
CN114787105B (en) * 2019-12-11 2024-03-05 Ube 株式会社 Plate-like silicon nitride sintered body and method for producing same
JPWO2021200814A1 (en) * 2020-03-30 2021-10-07
TW202140407A (en) * 2020-03-30 2021-11-01 日商電化股份有限公司 Silicon nitride powder, and method for producing silicon nitride sintered body
KR102475700B1 (en) * 2020-07-28 2022-12-09 한국재료연구원 Preparation method of silicon powder, and preparation method of silicon nitride using the same
KR102459473B1 (en) * 2020-09-04 2022-10-26 한국재료연구원 Silicon nitride sintered body substrate and manufacturing method thereof
KR102408533B1 (en) * 2021-11-25 2022-06-14 주식회사 첨단랩 Manufacturing method of silicon nitride filler for thermal interface material
WO2023176889A1 (en) * 2022-03-18 2023-09-21 Ｕｂｅ株式会社 Silicon nitride powder and method for producing silicon nitride sintered body
WO2023176893A1 (en) * 2022-03-18 2023-09-21 Ｕｂｅ株式会社 Silicon nitride powder and method for producing silicon nitride sintered body

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2874057B2 (en) 1990-09-03 1999-03-24 信越化学工業株式会社 Silicon nitride powder
JP2578022B2 (en) 1990-12-04 1997-02-05 宇部興産株式会社 Method for producing crystalline silicon nitride powder
DE4113884A1 (en) * 1991-04-27 1992-10-29 Hoechst Ag METHOD FOR PRODUCING SILICON NITRIDE WITH A SMALL CRYSTALLITE SIZE
JP2696733B2 (en) 1991-11-26 1998-01-14 宇部興産株式会社 Method for producing crystalline silicon nitride powder
JPH05221617A (en) * 1992-02-14 1993-08-31 Shin Etsu Chem Co Ltd Production of silicon nitride powder
JP2872528B2 (en) * 1993-05-25 1999-03-17 宇部興産株式会社 Silicon nitride powder
JPH0812306A (en) 1994-07-01 1996-01-16 Ube Ind Ltd Silicon nitride powder
JP3475614B2 (en) 1995-12-05 2003-12-08 宇部興産株式会社 Silicon diimide
DE19651731B4 (en) * 1995-12-12 2012-08-16 Ube Industries, Ltd. Process for the preparation of a nitrogen-containing silane compound
CN100441501C (en) * 2002-09-09 2008-12-10 张芬红 System for preparing nanometer silicon nitride powder

Also Published As

Publication number Publication date
TWI573757B (en) 2017-03-11
EP2832687B1 (en) 2018-11-14
KR101652616B1 (en) 2016-08-30
CN104203813B (en) 2017-04-26
TW201343541A (en) 2013-11-01
US20150056121A1 (en) 2015-02-26
JPWO2013146713A1 (en) 2015-12-14
EP2832687A1 (en) 2015-02-04
CN104203813A (en) 2014-12-10
EP2832687A4 (en) 2015-11-25
JP5862765B2 (en) 2016-02-16
KR20140136002A (en) 2014-11-27
US9085462B2 (en) 2015-07-21
WO2013146713A1 (en) 2013-10-03

Similar Documents

Publication Publication Date Title
SG11201405976RA (en) Silicon nitride powder production method, silicon nitride powder, silicon nitride sintered body and circuit substrate using same
SG11201610089QA (en) Silicon nitride powder, silicon nitride sintered body and circuit substrate, and production method for said silicon nitride powder
EP2903374A4 (en) Terminal, communication method, and integrated circuit
EP2849504A4 (en) Terminal, communication method, and integrated circuit
EP2919538A4 (en) Terminal device, communication method and integrated circuit
EP3053899A4 (en) Cu/ceramic material joint, method for manufacturing cu/ceramic material joint, and substrate for power module
HK1250190A1 (en) Terminal device, communication device, communication method, and integrated circuit
EP2833405A4 (en) Semiconductor device, and method for manufacturing semiconductor device
EP2942808A4 (en) Ceramic wiring substrate, semiconductor device, and method for manufacturing ceramic wiring substrate
AU2014201138A1 (en) Case, method of manufacturing case, and electronic device
EP2908330A4 (en) Group iii nitride composite substrate, manufacturing method therefor, and group iii nitride semiconductor device manufacturing method
EP2960925A4 (en) Composite substrate, semiconductor device and method for manufacturing semiconductor device
EP2883921A4 (en) Silver particle ink, silver particle sintered body and method for manufacturing silver particle ink
EP2855148A4 (en) Substrate film and sintering method
EP2980046A4 (en) Method for manufacturing cubic boron nitride sintered body, and cubic boron nitride sintered body
EP2840073A4 (en) Semiconductor ceramic composition, method for producing same, and ptc element
EP2927277A4 (en) Paste composition, and sintered body and method for producing same
EP2927962A4 (en) Silicon carbide semiconductor device, and manufacturing method for same
EP2927939A4 (en) Silicon carbide semiconductor device, and manufacturing method for same
EP2927960A4 (en) Silicon carbide semiconductor device, and manufacturing method for same
EP2772472A4 (en) Sintered ceramic body
TWI563536B (en) Pattern forming method, method of manufacturing electronic device by using the same, and electronic device
EP2858088A4 (en) Glass substrate for electronic amplification, and method for manufacturing glass substrate for electronic amplification
EP2843687A4 (en) Composite substrate manufacturing method, semiconductor element manufacturing method, composite substrate, and semiconductor element
EP2778134A4 (en) Silicon oxide, and method for preparing same