SG11201606383YA - Techniques for forming non-planar resistive memory cells - Google Patents
Techniques for forming non-planar resistive memory cellsInfo
- Publication number
- SG11201606383YA SG11201606383YA SG11201606383YA SG11201606383YA SG11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA
- Authority
- SG
- Singapore
- Prior art keywords
- techniques
- memory cells
- resistive memory
- forming non
- planar resistive
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/841—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Shaping switching materials
- H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8833—Binary metal oxides, e.g. TaOx
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/883—Oxides or nitrides
- H10N70/8836—Complex metal oxides, e.g. perovskites, spinels
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/US2014/031735 WO2015147801A1 (fr) | 2014-03-25 | 2014-03-25 | Techniques de formation de cellules de mémoire résistive non planes |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606383YA true SG11201606383YA (en) | 2016-09-29 |
Family
ID=54196122
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606383YA SG11201606383YA (en) | 2014-03-25 | 2014-03-25 | Techniques for forming non-planar resistive memory cells |
Country Status (6)
Country | Link |
---|---|
US (1) | US10439134B2 (fr) |
EP (1) | EP3127155B1 (fr) |
KR (1) | KR102275565B1 (fr) |
CN (1) | CN106030801B (fr) |
SG (1) | SG11201606383YA (fr) |
WO (1) | WO2015147801A1 (fr) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
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CN106030801B (zh) | 2014-03-25 | 2020-09-15 | 英特尔公司 | 用于形成非平面电阻式存储器单元的技术 |
EP3234998A4 (fr) | 2014-12-18 | 2018-08-15 | Intel Corporation | Cellules de mémoire résistive comprenant des canaux filamentaires localisés, dispositifs les comprenant, et leurs procédés de fabrication |
EP3238281A4 (fr) | 2014-12-24 | 2018-08-08 | INTEL Corporation | Cellules de mémoire résistive et leurs précurseurs, leurs procédés de fabrication, et dispositifs les comprenant |
FR3031416B1 (fr) | 2015-01-06 | 2018-09-07 | Commissariat Energie Atomique | Cellule memoire non volatile resistive et son procede de fabrication |
US9553265B1 (en) | 2016-01-14 | 2017-01-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | RRAM device with data storage layer having increased height |
WO2018009155A1 (fr) * | 2016-07-02 | 2018-01-11 | Intel Corporation | Dispositifs rram ayant une couche inférieure d'échange d'oxygène et leurs procédés de fabrication |
WO2018009157A1 (fr) * | 2016-07-02 | 2018-01-11 | Intel Corporation | Mémoire résistive à accès aléatoire (rram) à oxydes multicomposants |
CN108155202B (zh) * | 2016-12-02 | 2020-12-08 | 联华电子股份有限公司 | 半导体结构及其制造方法 |
WO2018182649A1 (fr) * | 2017-03-30 | 2018-10-04 | Intel Corporation | Électrodes de barrière à l'oxygène stratifiées pour dispositifs de mémoire vive résistive (rram) et leurs procédés de fabrication |
CN107221599B (zh) * | 2017-05-25 | 2020-03-10 | 中国科学院微电子研究所 | 一种优化氧化物基的阻变存储器性能的方法 |
WO2019190502A1 (fr) * | 2018-03-28 | 2019-10-03 | Intel Corporation | Amélioration de l'endurance et du rendement de commutation dans des dispositifs rram |
CN108630810B (zh) * | 2018-05-14 | 2022-07-19 | 中国科学院微电子研究所 | 1s1r存储器集成结构及其制备方法 |
US10903425B2 (en) * | 2018-09-05 | 2021-01-26 | International Business Machines Corporation | Oxygen vacancy and filament-loss protection for resistive switching devices |
US11088203B2 (en) | 2019-07-29 | 2021-08-10 | Taiwan Semiconductor Manufacturing Company, Ltd. | 3D RRAM cell structure for reducing forming and set voltages |
TWI697987B (zh) * | 2019-08-12 | 2020-07-01 | 大陸商珠海興芯存儲科技有限公司 | 電阻式記憶體結構 |
US11196000B2 (en) | 2019-11-01 | 2021-12-07 | International Business Machines Corporation | Low forming voltage non-volatile memory (NVM) |
US11437568B2 (en) | 2020-03-31 | 2022-09-06 | Globalfoundries U.S. Inc. | Memory device and methods of making such a memory device |
US11081523B1 (en) | 2020-05-14 | 2021-08-03 | Globalfoundries Singapore Pte. Ltd. | Memory devices and methods of forming memory devices |
US11515475B2 (en) | 2020-05-14 | 2022-11-29 | Globalfoundries Singapore Pte. Ltd. | Resistive random access memory devices |
US11233195B2 (en) * | 2020-06-05 | 2022-01-25 | Globalfoundries Singapore Pte. Ltd. | Memory devices and methods of forming memory devices |
CN113889569A (zh) * | 2020-07-02 | 2022-01-04 | 华邦电子股份有限公司 | 电阻式随机存取存储器及其制造方法 |
US11522131B2 (en) | 2020-07-31 | 2022-12-06 | Globalfoundries Singapore Pte Ltd | Resistive memory device and methods of making such a resistive memory device |
US11335852B2 (en) * | 2020-09-21 | 2022-05-17 | Globalfoundries Singapore Pte. Ltd. | Resistive random access memory devices |
TWI726830B (zh) * | 2020-12-02 | 2021-05-01 | 華邦電子股份有限公司 | 電阻式記憶體 |
CN115715144A (zh) | 2021-08-18 | 2023-02-24 | 联华电子股份有限公司 | 可变电阻式随机存取存储器元件及其制作方法 |
US12004435B2 (en) * | 2022-06-01 | 2024-06-04 | International Business Machines Corporation | Tunable resistive random access memory cell |
US11955719B1 (en) * | 2023-12-11 | 2024-04-09 | United Arab Emirates University | Antenna system comprising two oppositely directed antennas and methods for controlling transmission of radiation through a multi-layered antenna structure |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
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US7531825B2 (en) * | 2005-12-27 | 2009-05-12 | Macronix International Co., Ltd. | Method for forming self-aligned thermal isolation cell for a variable resistance memory array |
US7791925B2 (en) * | 2008-10-31 | 2010-09-07 | Seagate Technology, Llc | Structures for resistive random access memory cells |
EP2202816B1 (fr) * | 2008-12-24 | 2012-06-20 | Imec | Procédé de fabrication d'un dispositif de mémoire à commutation résistive |
JP2010212541A (ja) | 2009-03-12 | 2010-09-24 | Panasonic Corp | 不揮発性記憶装置およびその製造方法 |
JP4929332B2 (ja) * | 2009-09-24 | 2012-05-09 | 株式会社東芝 | 電子部品の製造方法 |
JP5558090B2 (ja) * | 2009-12-16 | 2014-07-23 | 株式会社東芝 | 抵抗変化型メモリセルアレイ |
KR20110076394A (ko) | 2009-12-29 | 2011-07-06 | 삼성전자주식회사 | 상변화 메모리 장치 |
JP5450165B2 (ja) * | 2010-02-26 | 2014-03-26 | 株式会社東芝 | 不揮発性半導体記憶装置、及び不揮発性半導体記憶装置の製造方法 |
CN102280465B (zh) * | 2010-06-13 | 2013-05-29 | 北京大学 | 阻变随机访问存储器件及制造方法 |
JP4969707B2 (ja) | 2010-07-08 | 2012-07-04 | パナソニック株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
CN102339948A (zh) | 2010-07-16 | 2012-02-01 | 复旦大学 | 高一致性的电阻型存储器及其制备方法 |
KR20120134869A (ko) * | 2011-06-03 | 2012-12-12 | 삼성전자주식회사 | 저항 변화 체를 갖는 비-휘발성 메모리 소자 및 그 제조방법 |
KR20130004784A (ko) | 2011-07-04 | 2013-01-14 | 삼성전자주식회사 | 저항 변화 체를 갖는 비-휘발성 메모리 소자 및 그 제조방법 |
CN102306705A (zh) | 2011-09-16 | 2012-01-04 | 北京大学 | 一种大容量多值阻变存储器 |
KR20130091146A (ko) * | 2012-02-07 | 2013-08-16 | 삼성전자주식회사 | 비휘발성 메모리 셀 및 이를 포함하는 비휘발성 메모리 장치 |
US9548115B2 (en) * | 2012-03-16 | 2017-01-17 | Nec Corporation | Variable resistance element, semiconductor device having variable resistance element, semiconductor device manufacturing method, and programming method using variable resistance element |
KR101328506B1 (ko) | 2012-06-28 | 2013-11-13 | 인텔렉추얼디스커버리 주식회사 | 하이브리드 스위칭 막을 갖는 수직형 저항 변화 메모리 소자 및 그 제조방법 |
KR101929941B1 (ko) * | 2012-08-10 | 2018-12-18 | 삼성전자 주식회사 | 저항 변화 물질 소자 및 이를 적용한 디바이스 |
KR20140022205A (ko) * | 2012-08-13 | 2014-02-24 | 에스케이하이닉스 주식회사 | 비휘발성 메모리 장치 및 그 제조 방법 |
US9349953B2 (en) * | 2013-03-15 | 2016-05-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Resistance variable memory structure and method of forming the same |
CN106030801B (zh) | 2014-03-25 | 2020-09-15 | 英特尔公司 | 用于形成非平面电阻式存储器单元的技术 |
-
2014
- 2014-03-25 CN CN201480076291.0A patent/CN106030801B/zh not_active Expired - Fee Related
- 2014-03-25 US US15/117,594 patent/US10439134B2/en active Active
- 2014-03-25 EP EP14887288.0A patent/EP3127155B1/fr active Active
- 2014-03-25 SG SG11201606383YA patent/SG11201606383YA/en unknown
- 2014-03-25 WO PCT/US2014/031735 patent/WO2015147801A1/fr active Application Filing
- 2014-03-25 KR KR1020167023055A patent/KR102275565B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
US10439134B2 (en) | 2019-10-08 |
WO2015147801A8 (fr) | 2016-09-01 |
KR102275565B1 (ko) | 2021-07-12 |
KR20160137522A (ko) | 2016-11-30 |
EP3127155B1 (fr) | 2020-04-29 |
WO2015147801A1 (fr) | 2015-10-01 |
CN106030801A (zh) | 2016-10-12 |
CN106030801B (zh) | 2020-09-15 |
EP3127155A1 (fr) | 2017-02-08 |
EP3127155A4 (fr) | 2017-11-22 |
US20160359108A1 (en) | 2016-12-08 |
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