SG11201606383YA - Techniques for forming non-planar resistive memory cells - Google Patents

Techniques for forming non-planar resistive memory cells

Info

Publication number
SG11201606383YA
SG11201606383YA SG11201606383YA SG11201606383YA SG11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA SG 11201606383Y A SG11201606383Y A SG 11201606383YA
Authority
SG
Singapore
Prior art keywords
techniques
memory cells
resistive memory
forming non
planar resistive
Prior art date
Application number
SG11201606383YA
Inventor
Prashant Majhi
Elijah V Karpov
Uday Shah
Niloy Mukherjee
Charles C Kuo
Ravi Pillarisetty
Brian S Doyle
Robert S Chau
Original Assignee
Intel Corporaton
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporaton filed Critical Intel Corporaton
Publication of SG11201606383YA publication Critical patent/SG11201606383YA/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H10N70/066—Shaping switching materials by filling of openings, e.g. damascene method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8836—Complex metal oxides, e.g. perovskites, spinels

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Memories (AREA)
SG11201606383YA 2014-03-25 2014-03-25 Techniques for forming non-planar resistive memory cells SG11201606383YA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2014/031735 WO2015147801A1 (en) 2014-03-25 2014-03-25 Techniques for forming non-planar resistive memory cells

Publications (1)

Publication Number Publication Date
SG11201606383YA true SG11201606383YA (en) 2016-09-29

Family

ID=54196122

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201606383YA SG11201606383YA (en) 2014-03-25 2014-03-25 Techniques for forming non-planar resistive memory cells

Country Status (6)

Country Link
US (1) US10439134B2 (en)
EP (1) EP3127155B1 (en)
KR (1) KR102275565B1 (en)
CN (1) CN106030801B (en)
SG (1) SG11201606383YA (en)
WO (1) WO2015147801A1 (en)

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CN106030801B (en) 2014-03-25 2020-09-15 英特尔公司 Techniques for forming non-planar resistive memory cells
EP3234998A4 (en) 2014-12-18 2018-08-15 Intel Corporation Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the same
EP3238281A4 (en) 2014-12-24 2018-08-08 INTEL Corporation Resistive memory cells and precursors thereof, methods of making the same, and devices including the same
FR3031416B1 (en) 2015-01-06 2018-09-07 Commissariat Energie Atomique RESISTIVE NON-VOLATILE MEMORY CELL AND METHOD OF MANUFACTURING THE SAME
US9553265B1 (en) 2016-01-14 2017-01-24 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM device with data storage layer having increased height
WO2018009155A1 (en) * 2016-07-02 2018-01-11 Intel Corporation Rram devices having a bottom oxygen exchange layer and their methods of fabrication
WO2018009157A1 (en) * 2016-07-02 2018-01-11 Intel Corporation Resistive random access memory (rram) with multicomponent oxides
CN108155202B (en) * 2016-12-02 2020-12-08 联华电子股份有限公司 Semiconductor structure and manufacturing method thereof
WO2018182649A1 (en) * 2017-03-30 2018-10-04 Intel Corporation Layered oxygen barrier electrodes for resistive random access memory (rram) devices and their methods of fabrication
CN107221599B (en) * 2017-05-25 2020-03-10 中国科学院微电子研究所 Method for optimizing performance of oxide-based resistive random access memory
WO2019190502A1 (en) * 2018-03-28 2019-10-03 Intel Corporation Endurance and switching yield improvement in rram devices
CN108630810B (en) * 2018-05-14 2022-07-19 中国科学院微电子研究所 1S1R memory integrated structure and preparation method thereof
US10903425B2 (en) * 2018-09-05 2021-01-26 International Business Machines Corporation Oxygen vacancy and filament-loss protection for resistive switching devices
US11088203B2 (en) 2019-07-29 2021-08-10 Taiwan Semiconductor Manufacturing Company, Ltd. 3D RRAM cell structure for reducing forming and set voltages
TWI697987B (en) * 2019-08-12 2020-07-01 大陸商珠海興芯存儲科技有限公司 Resistive memory structure
US11196000B2 (en) 2019-11-01 2021-12-07 International Business Machines Corporation Low forming voltage non-volatile memory (NVM)
US11437568B2 (en) 2020-03-31 2022-09-06 Globalfoundries U.S. Inc. Memory device and methods of making such a memory device
US11081523B1 (en) 2020-05-14 2021-08-03 Globalfoundries Singapore Pte. Ltd. Memory devices and methods of forming memory devices
US11515475B2 (en) 2020-05-14 2022-11-29 Globalfoundries Singapore Pte. Ltd. Resistive random access memory devices
US11233195B2 (en) * 2020-06-05 2022-01-25 Globalfoundries Singapore Pte. Ltd. Memory devices and methods of forming memory devices
CN113889569A (en) * 2020-07-02 2022-01-04 华邦电子股份有限公司 Resistive random access memory and manufacturing method thereof
US11522131B2 (en) 2020-07-31 2022-12-06 Globalfoundries Singapore Pte Ltd Resistive memory device and methods of making such a resistive memory device
US11335852B2 (en) * 2020-09-21 2022-05-17 Globalfoundries Singapore Pte. Ltd. Resistive random access memory devices
TWI726830B (en) * 2020-12-02 2021-05-01 華邦電子股份有限公司 Resistive memory
CN115715144A (en) 2021-08-18 2023-02-24 联华电子股份有限公司 Variable resistance random access memory element and manufacturing method thereof
US12004435B2 (en) * 2022-06-01 2024-06-04 International Business Machines Corporation Tunable resistive random access memory cell
US11955719B1 (en) * 2023-12-11 2024-04-09 United Arab Emirates University Antenna system comprising two oppositely directed antennas and methods for controlling transmission of radiation through a multi-layered antenna structure

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US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
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US9349953B2 (en) * 2013-03-15 2016-05-24 Taiwan Semiconductor Manufacturing Company, Ltd. Resistance variable memory structure and method of forming the same
CN106030801B (en) 2014-03-25 2020-09-15 英特尔公司 Techniques for forming non-planar resistive memory cells

Also Published As

Publication number Publication date
US10439134B2 (en) 2019-10-08
WO2015147801A8 (en) 2016-09-01
KR102275565B1 (en) 2021-07-12
KR20160137522A (en) 2016-11-30
EP3127155B1 (en) 2020-04-29
WO2015147801A1 (en) 2015-10-01
CN106030801A (en) 2016-10-12
CN106030801B (en) 2020-09-15
EP3127155A1 (en) 2017-02-08
EP3127155A4 (en) 2017-11-22
US20160359108A1 (en) 2016-12-08

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