SG11201604690QA - Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM - Google Patents

Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM

Info

Publication number
SG11201604690QA
SG11201604690QA SG11201604690QA SG11201604690QA SG11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA SG 11201604690Q A SG11201604690Q A SG 11201604690QA
Authority
SG
Singapore
Prior art keywords
alloy film
forming
sputtering target
alloy
film
Prior art date
Application number
SG11201604690QA
Other languages
English (en)
Inventor
Sohei Nonaka
Shozo Komiyama
Yuto TOSHIMORI
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of SG11201604690QA publication Critical patent/SG11201604690QA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Non-Insulated Conductors (AREA)
  • Conductive Materials (AREA)
SG11201604690QA 2014-04-09 2015-03-18 Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM SG11201604690QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2014080354A JP5850077B2 (ja) 2014-04-09 2014-04-09 Ａｇ合金膜及びＡｇ合金膜形成用スパッタリングターゲット
PCT/JP2015/058051 WO2015156093A1 (ja) 2014-04-09 2015-03-18 Ａｇ合金膜及びＡｇ合金膜形成用スパッタリングターゲット

Publications (1)

Publication Number Publication Date
SG11201604690QA true SG11201604690QA (en) 2016-07-28

Family

ID=54287674

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201604690QA SG11201604690QA (en) 2014-04-09 2015-03-18 Ag ALLOY FILM AND SPUTTERING TARGET FOR FORMING Ag ALLOY FILM

Country Status (7)

Country Link
EP (2) EP3064603B1 (de)
JP (1) JP5850077B2 (de)
KR (1) KR101686778B1 (de)
CN (1) CN105793449B (de)
SG (1) SG11201604690QA (de)
TW (1) TWI645052B (de)
WO (1) WO2015156093A1 (de)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101710196B1 (ko) * 2016-11-04 2017-02-24 희성금속 주식회사 도전성 막 형성용 은 합금 조성물 및 이의 제조 방법
JP2021075762A (ja) * 2019-11-08 2021-05-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003242423A1 (en) * 2002-05-28 2003-12-12 Ishifuku Metal Industry Co., Ltd. Sputtering target material
JP2004192702A (ja) * 2002-12-10 2004-07-08 Tanaka Kikinzoku Kogyo Kk 光記録媒体の反射膜用の銀合金
US20050019203A1 (en) * 2003-07-23 2005-01-27 Yuhichi Saitoh Silver alloy material, circuit substrate, electronic device, and method for manufacturing circuit substrate
JP4379602B2 (ja) * 2003-08-20 2009-12-09 三菱マテリアル株式会社 半透明反射膜または反射膜を構成層とする光記録媒体および前記反射膜の形成に用いられるＡｇ合金スパッタリングターゲット
JP3968662B2 (ja) * 2004-01-15 2007-08-29 三菱マテリアル株式会社 光記録媒体の反射膜形成用銀合金スパッタリングターゲット
JP4951865B2 (ja) 2005-03-02 2012-06-13 日亜化学工業株式会社 半導体発光素子
JP5088545B2 (ja) 2007-07-05 2012-12-05 ソニー株式会社 電子機器
JP2012059576A (ja) 2010-09-09 2012-03-22 Nitto Denko Corp 有機エレクトロルミネッセンス素子
CN103443323B (zh) * 2011-04-06 2015-06-17 三菱综合材料株式会社 导电性膜形成用银合金溅射靶及其制造方法
JP5669014B2 (ja) * 2011-04-06 2015-02-12 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
JP5488849B2 (ja) * 2011-06-24 2014-05-14 三菱マテリアル株式会社 導電性膜およびその製造方法並びにこれに用いるスパッタリングターゲット
CN104066868B (zh) * 2012-01-23 2016-09-28 吉坤日矿日石金属株式会社 高纯度铜锰合金溅射靶
JP2013177667A (ja) * 2012-02-02 2013-09-09 Kobe Steel Ltd 反射膜および／または透過膜、もしくは電気配線および／または電極に用いられるＡｇ合金膜、並びにＡｇ合金スパッタリングターゲットおよびＡｇ合金フィラー
DE102012006718B3 (de) 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP5927744B2 (ja) * 2012-06-25 2016-06-01 三菱マテリアル株式会社 Ａｇ合金導電膜及び膜形成用スパッタリングターゲット
JP5928218B2 (ja) * 2012-07-20 2016-06-01 三菱マテリアル株式会社 Ａｇ合金膜及びその製造方法
JP6198177B2 (ja) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット

Also Published As

Publication number Publication date
CN105793449B (zh) 2017-09-29
TWI645052B (zh) 2018-12-21
JP5850077B2 (ja) 2016-02-03
TW201602363A (zh) 2016-01-16
EP3428296A1 (de) 2019-01-16
JP2015199996A (ja) 2015-11-12
KR20160071476A (ko) 2016-06-21
WO2015156093A1 (ja) 2015-10-15
KR101686778B1 (ko) 2016-12-14
CN105793449A (zh) 2016-07-20
EP3064603B1 (de) 2018-11-28
EP3064603A4 (de) 2017-03-29
EP3064603A1 (de) 2016-09-07

Similar Documents

Publication Publication Date Title
EP3217824A4 (de) Abtötendes metall oder abtötende metalllegierungsmaske
EP3196334A4 (de) Silberlegierung-sputtertarget und silberlegierungsschichtherstellungsverfahren
EP3160397A4 (de) Verbesserte metalllegierungen für medizinische vorrichtungen
SG11201604727UA (en) Sputtering target of sintered sb-te-based alloy
EP3115476A4 (de) Wärmebeständige austenitische legierung
IL246811A0 (en) A target for emitting power
TWI560298B (en) Sputtering target and manufacturing method of the sputtering target
SG11201802203UA (en) Sputtering target material
IL270046B1 (en) Superalloy sputtering on a target
EP3219818A4 (de) Magnesiumlegierung und herstellungsverfahren und verwendung davon
EP3106534A4 (de) Legierung
SG11201700667VA (en) Sputtering target
EP3170189A4 (de) Multikalorische mnnisi-legierungen
SG11201608581XA (en) Sputtering target and process for production thereof
EP3050999A4 (de) Sputtertarget und sputtertarget-herstellungsverfahren
EP3208364A4 (de) Elektroplattierungsvorrichtung für kupfer-nickel-legierung
SG11201710836UA (en) Sputtering target material
EP3196333A4 (de) Silberlegierungssputtertarget, herstellungsverfahren für silberlegierungssputtertarget, silberlegierungsfilm und herstellungsverfahren für legierungsfilm
SG11201706280XA (en) Cr-Ti ALLOY SPUTTERING TARGET MATERIAL AND METHOD FOR PRODUCING SAME
EP3187619A4 (de) Cu-ga-sputtertarget und verfahren zur herstellung des cu-ga-sputtertargets
SG11201607790WA (en) SPUTTERING TARGET COMPRISING Al-Te-Cu-Zr ALLOY, AND METHOD FOR PRODUCING SAME
EP3106540A4 (de) Sputtertarget mit mi-p-legierung oder ni-pt-p-legierung und herstellungsverfahren dafür
EP3101153A4 (de) Cu-ga-legierungs-sputtertarget und verfahren zur herstellung davon
SG11201606086YA (en) Magnetron and magnetron sputtering device
PL3172354T3 (pl) Target do rozpylania na bazie stopu srebra