SG11201509256XA - Method of manufacturing bonded wafer - Google Patents
Method of manufacturing bonded waferInfo
- Publication number
- SG11201509256XA SG11201509256XA SG11201509256XA SG11201509256XA SG11201509256XA SG 11201509256X A SG11201509256X A SG 11201509256XA SG 11201509256X A SG11201509256X A SG 11201509256XA SG 11201509256X A SG11201509256X A SG 11201509256XA SG 11201509256X A SG11201509256X A SG 11201509256XA
- Authority
- SG
- Singapore
- Prior art keywords
- bonded wafer
- manufacturing bonded
- manufacturing
- wafer
- bonded
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02321—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer
- H01L21/02329—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment introduction of substances into an already existing insulating layer introduction of nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
- H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Element Separation (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013113307A JP6086031B2 (ja) | 2013-05-29 | 2013-05-29 | 貼り合わせウェーハの製造方法 |
PCT/JP2014/001680 WO2014192207A1 (ja) | 2013-05-29 | 2014-03-25 | 貼り合わせウェーハの製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201509256XA true SG11201509256XA (en) | 2015-12-30 |
Family
ID=51988262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201509256XA SG11201509256XA (en) | 2013-05-29 | 2014-03-25 | Method of manufacturing bonded wafer |
Country Status (8)
Country | Link |
---|---|
US (1) | US9735045B2 (de) |
EP (1) | EP3007204B1 (de) |
JP (1) | JP6086031B2 (de) |
KR (1) | KR102022504B1 (de) |
CN (1) | CN105264641B (de) |
SG (1) | SG11201509256XA (de) |
TW (1) | TWI549192B (de) |
WO (1) | WO2014192207A1 (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3046877B1 (fr) * | 2016-01-14 | 2018-01-19 | Soitec | Procede de lissage de la surface d'une structure |
CN108701589A (zh) * | 2016-02-16 | 2018-10-23 | G射线瑞士公司 | 用于跨越键合界面传输电荷的结构、系统和方法 |
US20220048762A1 (en) * | 2020-08-14 | 2022-02-17 | Beijing Voyager Technology Co., Ltd. | Void reduction on wafer bonding interface |
Family Cites Families (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01307472A (ja) | 1988-06-03 | 1989-12-12 | Matsushita Electric Ind Co Ltd | 押出コーティング装置 |
FR2681472B1 (fr) | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
JP3173926B2 (ja) * | 1993-08-12 | 2001-06-04 | 株式会社半導体エネルギー研究所 | 薄膜状絶縁ゲイト型半導体装置の作製方法及びその半導体装置 |
JPH11307472A (ja) | 1998-04-23 | 1999-11-05 | Shin Etsu Handotai Co Ltd | 水素イオン剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
JP2000124092A (ja) * | 1998-10-16 | 2000-04-28 | Shin Etsu Handotai Co Ltd | 水素イオン注入剥離法によってsoiウエーハを製造する方法およびこの方法で製造されたsoiウエーハ |
JP4379943B2 (ja) * | 1999-04-07 | 2009-12-09 | 株式会社デンソー | 半導体基板の製造方法および半導体基板製造装置 |
FR2827423B1 (fr) * | 2001-07-16 | 2005-05-20 | Soitec Silicon On Insulator | Procede d'amelioration d'etat de surface |
CN100454552C (zh) | 2001-07-17 | 2009-01-21 | 信越半导体株式会社 | 贴合晶片的制造方法及贴合晶片、以及贴合soi晶片 |
FR2858462B1 (fr) * | 2003-07-29 | 2005-12-09 | Soitec Silicon On Insulator | Procede d'obtention d'une couche mince de qualite accrue par co-implantation et recuit thermique |
KR20060030911A (ko) | 2003-07-29 | 2006-04-11 | 에스. 오. 이. 떼끄 씰리꽁 오 냉쉴라또흐 떼끄놀로지 | 공동-임플란트 및 열적 아닐링에 의한 개선된 품질의 박층제조방법 |
FR2912258B1 (fr) | 2007-02-01 | 2009-05-08 | Soitec Silicon On Insulator | "procede de fabrication d'un substrat du type silicium sur isolant" |
JP5135935B2 (ja) * | 2007-07-27 | 2013-02-06 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法 |
JP5276863B2 (ja) * | 2008-03-21 | 2013-08-28 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハ |
TWI483350B (zh) * | 2008-03-21 | 2015-05-01 | Shinetsu Chemical Co | SOI wafer manufacturing method and glass cleaning method |
KR101541940B1 (ko) | 2008-04-01 | 2015-08-04 | 신에쓰 가가꾸 고교 가부시끼가이샤 | Soi 기판의 제조 방법 |
JP4666189B2 (ja) * | 2008-08-28 | 2011-04-06 | 信越半導体株式会社 | Soiウェーハの製造方法 |
EP2161741B1 (de) * | 2008-09-03 | 2014-06-11 | Soitec | Verfahren zur Herstellung eines Halbleiters auf einem Isoliersubstrat mit verringerter SECCO-Fehlerdichte |
JP2010098167A (ja) | 2008-10-17 | 2010-04-30 | Shin Etsu Handotai Co Ltd | 貼り合わせウェーハの製造方法 |
FR2943458B1 (fr) | 2009-03-18 | 2011-06-10 | Soitec Silicon On Insulator | Procede de finition d'un substrat de type "silicium sur isolant" soi |
US8043938B2 (en) * | 2009-05-14 | 2011-10-25 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate and SOI substrate |
JP2010278337A (ja) * | 2009-05-29 | 2010-12-09 | Shin-Etsu Chemical Co Ltd | 表面欠陥密度が少ないsos基板 |
JP5703920B2 (ja) * | 2011-04-13 | 2015-04-22 | 信越半導体株式会社 | 貼り合わせウェーハの製造方法 |
JP2013143407A (ja) * | 2012-01-06 | 2013-07-22 | Shin Etsu Handotai Co Ltd | 貼り合わせsoiウェーハの製造方法 |
-
2013
- 2013-05-29 JP JP2013113307A patent/JP6086031B2/ja active Active
-
2014
- 2014-03-25 WO PCT/JP2014/001680 patent/WO2014192207A1/ja active Application Filing
- 2014-03-25 KR KR1020157033535A patent/KR102022504B1/ko active IP Right Grant
- 2014-03-25 SG SG11201509256XA patent/SG11201509256XA/en unknown
- 2014-03-25 CN CN201480028918.5A patent/CN105264641B/zh active Active
- 2014-03-25 EP EP14804151.0A patent/EP3007204B1/de active Active
- 2014-03-25 US US14/787,647 patent/US9735045B2/en active Active
- 2014-05-28 TW TW103118642A patent/TWI549192B/zh active
Also Published As
Publication number | Publication date |
---|---|
CN105264641B (zh) | 2018-01-12 |
KR20160013037A (ko) | 2016-02-03 |
TWI549192B (zh) | 2016-09-11 |
WO2014192207A1 (ja) | 2014-12-04 |
TW201445636A (zh) | 2014-12-01 |
US20160079114A1 (en) | 2016-03-17 |
JP2014232806A (ja) | 2014-12-11 |
US9735045B2 (en) | 2017-08-15 |
EP3007204A4 (de) | 2017-03-01 |
EP3007204B1 (de) | 2021-09-29 |
EP3007204A1 (de) | 2016-04-13 |
JP6086031B2 (ja) | 2017-03-01 |
KR102022504B1 (ko) | 2019-09-18 |
CN105264641A (zh) | 2016-01-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
GB2520596B (en) | Manufacturing method | |
GB201313840D0 (en) | Method of Manufacturing a Component | |
GB201313841D0 (en) | Method of Manufacturing a Component | |
GB201313839D0 (en) | Method of Manufacturing a Component | |
EP2978018A4 (de) | Verfahren zur herstellung eines strommodulsubstrats | |
GB201401248D0 (en) | Method of manufacture | |
HK1202704A1 (en) | Manufacturing method of semiconductor device | |
EP2966679A4 (de) | Verfahren zur herstellung eines strommodulsubstrats | |
EP2978019A4 (de) | Verfahren zur herstellung eines gebondeten körpers und verfahren zur herstellung eines strommodulsubstrats | |
EP2843686A4 (de) | Verfahren zur herstellung eines gebondeten wafers | |
EP2808889A4 (de) | Verfahren zur herstellung eines soi-wafers | |
SG11201503368TA (en) | Method of fabricating semiconductor devices | |
SG11201600043RA (en) | Method for bonding of contact surfaces | |
GB201413054D0 (en) | Semiconductor assembly and method of manufacture | |
EP2950360A4 (de) | Verfahren zur herstellung eines thermoelektrischen wandlers | |
EP2919273A4 (de) | Verfahren zur herstellung eines halbleiterbauelements | |
SG11201607286TA (en) | Method for manufacturing bonded wafer | |
EP2887383A4 (de) | Verfahren zur herstellung eines soi-wafers | |
SG11201507884PA (en) | Method of manufacturing semiconductor device | |
GB201322931D0 (en) | Method of etching | |
SG11201508204RA (en) | Method of producing semiconductor device | |
GB201305231D0 (en) | Method of Manufacture | |
SG11201510639QA (en) | Method of producing bonded wafer | |
GB201400337D0 (en) | Method of manufacturing head chip | |
SG11201509256XA (en) | Method of manufacturing bonded wafer |