SG11201508969QA - Method for producing hybrid substrate, and hybrid substrate - Google Patents
Method for producing hybrid substrate, and hybrid substrateInfo
- Publication number
- SG11201508969QA SG11201508969QA SG11201508969QA SG11201508969QA SG11201508969QA SG 11201508969Q A SG11201508969Q A SG 11201508969QA SG 11201508969Q A SG11201508969Q A SG 11201508969QA SG 11201508969Q A SG11201508969Q A SG 11201508969QA SG 11201508969Q A SG11201508969Q A SG 11201508969QA
- Authority
- SG
- Singapore
- Prior art keywords
- hybrid substrate
- producing
- substrate
- producing hybrid
- hybrid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76256—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques using silicon etch back techniques, e.g. BESOI, ELTRAN
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
- H01L27/1207—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI combined with devices in contact with the semiconductor body, i.e. bulk/SOI hybrid circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013096512 | 2013-05-01 | ||
PCT/JP2014/061807 WO2014178356A1 (ja) | 2013-05-01 | 2014-04-21 | ハイブリッド基板の製造方法及びハイブリッド基板 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201508969QA true SG11201508969QA (en) | 2015-12-30 |
Family
ID=51843484
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201508969QA SG11201508969QA (en) | 2013-05-01 | 2014-04-21 | Method for producing hybrid substrate, and hybrid substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US9741603B2 (zh) |
EP (1) | EP2993686B1 (zh) |
JP (1) | JP6168143B2 (zh) |
KR (1) | KR102229397B1 (zh) |
CN (1) | CN105190835B (zh) |
SG (1) | SG11201508969QA (zh) |
WO (1) | WO2014178356A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3034252B1 (fr) * | 2015-03-24 | 2018-01-19 | Soitec | Procede de reduction de la contamination metallique sur la surface d'un substrat |
US10014271B2 (en) * | 2015-11-20 | 2018-07-03 | Taiwan Semiconductor Manufacturing Company Ltd. | Semiconductor structure and method of manufacturing the same |
JP6549054B2 (ja) | 2016-02-02 | 2019-07-24 | 信越化学工業株式会社 | 複合基板および複合基板の製造方法 |
US11361969B2 (en) | 2017-07-14 | 2022-06-14 | Shin-Etsu Chemical Co., Ltd. | Device substrate with high thermal conductivity and method of manufacturing the same |
US11211259B2 (en) | 2018-04-20 | 2021-12-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure and method for embedded gettering in a silicon on insulator wafer |
FR3087297B1 (fr) * | 2018-10-12 | 2021-01-08 | Commissariat Energie Atomique | Procede de transfert de film mince |
US11232974B2 (en) * | 2018-11-30 | 2022-01-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fabrication method of metal-free SOI wafer |
KR102250895B1 (ko) * | 2019-12-23 | 2021-05-12 | 주식회사 현대케피코 | 반도체 소자의 제조방법 |
CN112599470A (zh) * | 2020-12-08 | 2021-04-02 | 上海新昇半导体科技有限公司 | 一种绝缘体上硅结构及其方法 |
KR102427718B1 (ko) | 2021-01-11 | 2022-08-01 | 주식회사 트랜스코스모스코리아 | 양방향 화면공유를 통한 보이는 고객상담서비스 시스템 및 방법 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3237888B2 (ja) * | 1992-01-31 | 2001-12-10 | キヤノン株式会社 | 半導体基体及びその作製方法 |
JP2895743B2 (ja) * | 1994-03-25 | 1999-05-24 | 信越半導体株式会社 | Soi基板の製造方法 |
US6417108B1 (en) * | 1998-02-04 | 2002-07-09 | Canon Kabushiki Kaisha | Semiconductor substrate and method of manufacturing the same |
FR2816445B1 (fr) * | 2000-11-06 | 2003-07-25 | Commissariat Energie Atomique | Procede de fabrication d'une structure empilee comprenant une couche mince adherant a un substrat cible |
KR100401655B1 (ko) * | 2001-01-18 | 2003-10-17 | 주식회사 컴텍스 | ALE를 이용한 알루미나(Al₂O₃) 유전체 층 형성에 의한 스마트 공정을 이용한 유니본드형 SOI 웨이퍼의 제조방법 |
JPWO2003046993A1 (ja) * | 2001-11-29 | 2005-04-14 | 信越半導体株式会社 | Soiウェーハの製造方法 |
JP4720163B2 (ja) * | 2004-12-02 | 2011-07-13 | 株式会社Sumco | Soiウェーハの製造方法 |
FR2935536B1 (fr) * | 2008-09-02 | 2010-09-24 | Soitec Silicon On Insulator | Procede de detourage progressif |
FR2938702B1 (fr) * | 2008-11-19 | 2011-03-04 | Soitec Silicon On Insulator | Preparation de surface d'un substrat saphir pour la realisation d'heterostructures |
FR2938975B1 (fr) * | 2008-11-24 | 2010-12-31 | Soitec Silicon On Insulator | Procede de realisation d'une heterostructure de type silicium sur saphir |
JP5443833B2 (ja) * | 2009-05-29 | 2014-03-19 | 信越化学工業株式会社 | 貼り合わせsoi基板の製造方法 |
FR2950734B1 (fr) | 2009-09-28 | 2011-12-09 | Soitec Silicon On Insulator | Procede de collage et de transfert d'une couche |
FR2954585B1 (fr) * | 2009-12-23 | 2012-03-02 | Soitec Silicon Insulator Technologies | Procede de realisation d'une heterostructure avec minimisation de contrainte |
FR2957190B1 (fr) * | 2010-03-02 | 2012-04-27 | Soitec Silicon On Insulator | Procede de realisation d'une structure multicouche avec detourage par effets thermomecaniques. |
CN102130037B (zh) * | 2010-12-27 | 2013-03-13 | 上海新傲科技股份有限公司 | 采用吸杂工艺制备带有绝缘埋层的半导体衬底的方法 |
WO2012088710A1 (zh) * | 2010-12-27 | 2012-07-05 | 上海新傲科技股份有限公司 | 采用吸杂工艺制备带有绝缘埋层的半导体衬底的方法 |
JP5926527B2 (ja) * | 2011-10-17 | 2016-05-25 | 信越化学工業株式会社 | 透明soiウェーハの製造方法 |
US10103021B2 (en) | 2012-01-12 | 2018-10-16 | Shin-Etsu Chemical Co., Ltd. | Thermally oxidized heterogeneous composite substrate and method for manufacturing same |
JP6160616B2 (ja) * | 2012-07-25 | 2017-07-12 | 信越化学工業株式会社 | Sos基板の製造方法及びsos基板 |
-
2014
- 2014-04-21 CN CN201480024384.9A patent/CN105190835B/zh active Active
- 2014-04-21 KR KR1020157030444A patent/KR102229397B1/ko active IP Right Grant
- 2014-04-21 SG SG11201508969QA patent/SG11201508969QA/en unknown
- 2014-04-21 JP JP2015514836A patent/JP6168143B2/ja active Active
- 2014-04-21 US US14/785,724 patent/US9741603B2/en active Active
- 2014-04-21 WO PCT/JP2014/061807 patent/WO2014178356A1/ja active Application Filing
- 2014-04-21 EP EP14792333.8A patent/EP2993686B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
EP2993686B1 (en) | 2021-05-26 |
US20160071761A1 (en) | 2016-03-10 |
KR102229397B1 (ko) | 2021-03-17 |
KR20160002814A (ko) | 2016-01-08 |
WO2014178356A1 (ja) | 2014-11-06 |
EP2993686A4 (en) | 2016-11-30 |
US9741603B2 (en) | 2017-08-22 |
EP2993686A1 (en) | 2016-03-09 |
CN105190835B (zh) | 2018-11-09 |
JP6168143B2 (ja) | 2017-07-26 |
CN105190835A (zh) | 2015-12-23 |
JPWO2014178356A1 (ja) | 2017-02-23 |
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