SG11201500762SA - Fe-Pt-BASED SINTERED COMPACT SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR - Google Patents

Fe-Pt-BASED SINTERED COMPACT SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR

Info

Publication number
SG11201500762SA
SG11201500762SA SG11201500762SA SG11201500762SA SG11201500762SA SG 11201500762S A SG11201500762S A SG 11201500762SA SG 11201500762S A SG11201500762S A SG 11201500762SA SG 11201500762S A SG11201500762S A SG 11201500762SA SG 11201500762S A SG11201500762S A SG 11201500762SA
Authority
SG
Singapore
Prior art keywords
manufacturing
sputtering target
method therefor
sintered compact
based sintered
Prior art date
Application number
SG11201500762SA
Other languages
English (en)
Inventor
Shin-Ichi Ogino
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201500762SA publication Critical patent/SG11201500762SA/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
SG11201500762SA 2012-10-23 2013-10-18 Fe-Pt-BASED SINTERED COMPACT SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR SG11201500762SA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012233999 2012-10-23
PCT/JP2013/078264 WO2014065201A1 (ja) 2012-10-23 2013-10-18 Ｆｅ－Ｐｔ系焼結体スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201500762SA true SG11201500762SA (en) 2015-05-28

Family

ID=50544581

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201500762SA SG11201500762SA (en) 2012-10-23 2013-10-18 Fe-Pt-BASED SINTERED COMPACT SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR

Country Status (6)

Country Link
JP (1) JP5913620B2 (zh)
CN (1) CN104781446B (zh)
MY (1) MY175025A (zh)
SG (1) SG11201500762SA (zh)
TW (1) TWI616548B (zh)
WO (1) WO2014065201A1 (zh)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10600440B2 (en) 2014-09-22 2020-03-24 Jx Nippon Mining & Metals Corporation Sputtering target for forming magnetic recording film and method for producing same
SG11201806169UA (en) * 2016-02-19 2018-09-27 Jx Nippon Mining & Metals Corp Sputtering target for magnetic recording medium, and magnetic thin film
WO2017222682A1 (en) * 2016-06-24 2017-12-28 Tosoh Smd, Inc. Tungsten-boron sputter targets and films made thereby
JP6526837B2 (ja) * 2016-09-12 2019-06-05 Ｊｘ金属株式会社 強磁性材スパッタリングターゲット
JP6798627B2 (ja) * 2018-03-19 2020-12-09 住友電気工業株式会社 表面被覆切削工具
JP7057692B2 (ja) * 2018-03-20 2022-04-20 田中貴金属工業株式会社 スパッタリングターゲット用Ｆｅ－Ｐｔ－酸化物－ＢＮ系焼結体
JP6989427B2 (ja) 2018-03-23 2022-01-05 昭和電工株式会社 磁気記録媒体および磁気記録再生装置
JP7049182B2 (ja) 2018-05-21 2022-04-06 昭和電工株式会社 磁気記録媒体および磁気記憶装置
JP7104001B2 (ja) * 2019-06-28 2022-07-20 田中貴金属工業株式会社 Ｆｅ－Ｐｔ－ＢＮ系スパッタリングターゲット及びその製造方法
US20220267892A1 (en) * 2019-07-12 2022-08-25 Tanaka Kikinzoku Kogyo K.K. Fe-pt-bn-based sputtering target and production method therefor
TWI752655B (zh) * 2020-09-25 2022-01-11 光洋應用材料科技股份有限公司 鐵鉑基靶材及其製法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2934120B2 (ja) * 1992-07-02 1999-08-16 信越化学工業株式会社 熱分解窒化ほう素容器
JP2694110B2 (ja) * 1993-09-09 1997-12-24 株式会社アモルファス・電子デバイス研究所 磁性薄膜及びその製造方法
JP3786453B2 (ja) * 1994-07-11 2006-06-14 株式会社東芝 磁気記録媒体および磁気記録再生装置
JPH0950618A (ja) * 1995-08-04 1997-02-18 Victor Co Of Japan Ltd 磁気記録媒体及びその製造方法
JP3328692B2 (ja) * 1999-04-26 2002-09-30 東北大学長 磁気記録媒体の製造方法
JP4175829B2 (ja) * 2002-04-22 2008-11-05 株式会社東芝 記録媒体用スパッタリングターゲットと磁気記録媒体
US20080210555A1 (en) * 2007-03-01 2008-09-04 Heraeus Inc. High density ceramic and cermet sputtering targets by microwave sintering
CN101255546A (zh) * 2007-03-01 2008-09-03 贺利氏有限公司 通过微波烧结制备高密度陶瓷和金属陶瓷溅射靶

Also Published As

Publication number Publication date
MY175025A (en) 2020-06-03
CN104781446B (zh) 2017-03-08
TW201428119A (zh) 2014-07-16
CN104781446A (zh) 2015-07-15
TWI616548B (zh) 2018-03-01
JP5913620B2 (ja) 2016-04-27
WO2014065201A1 (ja) 2014-05-01
JPWO2014065201A1 (ja) 2016-09-08

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