SG11201401078QA - Sintered magnesium oxide target for sputtering, and method for producing same - Google Patents
Sintered magnesium oxide target for sputtering, and method for producing sameInfo
- Publication number
- SG11201401078QA SG11201401078QA SG11201401078QA SG11201401078QA SG11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA
- Authority
- SG
- Singapore
- Prior art keywords
- sputtering
- magnesium oxide
- oxide target
- producing same
- sintered magnesium
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/03—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
- C04B35/04—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
- C04B35/053—Fine ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
- C04B35/645—Pressure sintering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/44—Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
- C04B2235/442—Carbonates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5445—Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/72—Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
- C04B2235/721—Carbon content
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
- C04B2235/81—Materials characterised by the absence of phases other than the main phase, i.e. single phase materials
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
- C04B2235/9646—Optical properties
- C04B2235/9661—Colour
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011285757 | 2011-12-27 | ||
PCT/JP2012/083391 WO2013099832A1 (en) | 2011-12-27 | 2012-12-25 | Sintered magnesium oxide target for sputtering, and method for producing same |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201401078QA true SG11201401078QA (en) | 2014-09-26 |
Family
ID=48697317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201401078QA SG11201401078QA (en) | 2011-12-27 | 2012-12-25 | Sintered magnesium oxide target for sputtering, and method for producing same |
Country Status (7)
Country | Link |
---|---|
US (2) | US9988709B2 (en) |
JP (1) | JP5654119B2 (en) |
CN (1) | CN103814152A (en) |
MY (1) | MY166187A (en) |
SG (1) | SG11201401078QA (en) |
TW (1) | TW201341561A (en) |
WO (1) | WO2013099832A1 (en) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2014073387A1 (en) * | 2012-11-07 | 2014-05-15 | 日本碍子株式会社 | Ceramic material and sputtering-target member |
KR102142037B1 (en) * | 2012-11-07 | 2020-08-06 | 엔지케이 인슐레이터 엘티디 | Ceramic material and sputtering-target member |
US20200010368A1 (en) * | 2016-07-13 | 2020-01-09 | Tosoh Smd, Inc. | Magnesium oxide sputtering target and method of making same |
CN106587940B (en) * | 2016-12-02 | 2020-03-27 | 有研亿金新材料有限公司 | High-purity compact magnesium oxide target material and preparation method thereof |
US10704139B2 (en) * | 2017-04-07 | 2020-07-07 | Applied Materials, Inc. | Plasma chamber target for reducing defects in workpiece during dielectric sputtering |
JP6925165B2 (en) * | 2017-05-19 | 2021-08-25 | Jx金属株式会社 | Sputtering target |
US11345990B2 (en) | 2018-09-13 | 2022-05-31 | Jx Nippon Mining & Metals Corporation | MgO sintered sputtering target |
SG11202102958VA (en) | 2018-10-10 | 2021-04-29 | Jx Nippon Mining & Metals Corp | Magnesium oxide sputtering target |
US11676632B2 (en) * | 2019-12-26 | 2023-06-13 | Resonac Corporation | Magnetic recording medium, method of manufacturing magnetic recording medium and magnetic storage device |
US11227751B1 (en) | 2020-07-01 | 2022-01-18 | Applied Materials, Inc. | Plasma chamber target for reducing defects in workpiece during dielectric sputtering |
Family Cites Families (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10130827A (en) * | 1996-10-28 | 1998-05-19 | Mitsubishi Materials Corp | Mgo target and its production |
JPH10130828A (en) * | 1996-10-31 | 1998-05-19 | Mitsubishi Materials Corp | Mgo target and its production |
JPH10158826A (en) | 1996-12-04 | 1998-06-16 | Mitsubishi Materials Corp | Mgo target and its production |
JPH10237636A (en) | 1997-02-21 | 1998-09-08 | Mitsubishi Materials Corp | Target essentially consisting of mgo and its production |
JP3417457B2 (en) | 1997-06-13 | 2003-06-16 | 三菱マテリアル株式会社 | Target containing MgO as main component and method for producing the same |
US6056857A (en) * | 1997-08-13 | 2000-05-02 | Praxair S.T. Technology, Inc. | Cryogenic annealing of sputtering targets |
JPH11139862A (en) | 1997-11-04 | 1999-05-25 | Sumitomo Metal Mining Co Ltd | High density magnesium oxide sintered compact and its production |
JP3494205B2 (en) | 1998-05-28 | 2004-02-09 | 三菱マテリアル株式会社 | Target material containing MgO as a main component and method for producing the same |
JP2000169956A (en) | 1998-12-03 | 2000-06-20 | Japan Energy Corp | Magnesium oxide target for sputtering and its production |
US6500321B1 (en) * | 1999-05-26 | 2002-12-31 | Novellus Systems, Inc. | Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target |
CN1326909A (en) | 2000-12-28 | 2001-12-19 | 蒋政 | High density indium-tin oxide target material and its producing method |
JP4904645B2 (en) * | 2001-08-10 | 2012-03-28 | 東ソー株式会社 | Method for producing Mg-containing ITO sputtering target |
TW200300455A (en) * | 2001-11-30 | 2003-06-01 | Mitsubishi Materials Corp | MgO deposition material and production method of the same |
US6652668B1 (en) * | 2002-05-31 | 2003-11-25 | Praxair S.T. Technology, Inc. | High-purity ferromagnetic sputter targets and method of manufacture |
CN1856591B (en) * | 2003-09-26 | 2010-12-08 | 株式会社东芝 | Sputtering target and process for producing Si oxide film therewith |
JP2008189493A (en) * | 2007-02-02 | 2008-08-21 | Sumitomo Electric Ind Ltd | POLYCRYSTALLINE MgO SINTERED BODY |
JP5231823B2 (en) * | 2008-01-28 | 2013-07-10 | 日本タングステン株式会社 | Polycrystalline MgO sintered body, method for producing the same, and MgO target for sputtering |
JP4715859B2 (en) * | 2008-04-15 | 2011-07-06 | パナソニック株式会社 | Plasma display device |
WO2010029702A1 (en) * | 2008-09-09 | 2010-03-18 | キヤノンアネルバ株式会社 | Method for manufacturing magnetoresistive element, and storage medium used in the manufacturing method |
FR2937320B1 (en) * | 2008-10-17 | 2011-07-29 | Saint Gobain Ct Recherches | PROCESS FOR PRODUCING A MOLTEN CERAMIC PRODUCT, PRODUCT OBTAINED, AND USES THEREOF |
CN101575203B (en) * | 2009-06-19 | 2013-01-16 | 西北稀有金属材料研究院 | Preparation method of ITO sputtering target material |
KR20140016386A (en) * | 2010-01-07 | 2014-02-07 | 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 | Sputtering target, compound semiconductor thin film, solar cell having compound semiconductor thin film, and method for manufacturing compound semiconductor thin film |
CN102198954A (en) * | 2011-04-22 | 2011-09-28 | 辽宁中大超导材料有限公司 | Impurity control method for sintered body magnesium oxide target |
CN102212781B (en) | 2011-05-10 | 2013-09-11 | 孔伟华 | Method for manufacturing high-density and low-cost zinc oxide aluminum sputtering target |
US20160340255A1 (en) * | 2014-01-29 | 2016-11-24 | Hewlett-Packard Development Company, L.P. | Oxygen conducting bismuth perovskite material |
US10267761B2 (en) * | 2016-06-14 | 2019-04-23 | Delphi Technologies Ip Limited | Material for sensing electrode of NOX gas sensor |
-
2012
- 2012-12-25 SG SG11201401078QA patent/SG11201401078QA/en unknown
- 2012-12-25 WO PCT/JP2012/083391 patent/WO2013099832A1/en active Application Filing
- 2012-12-25 US US14/356,395 patent/US9988709B2/en active Active
- 2012-12-25 MY MYPI2014701449A patent/MY166187A/en unknown
- 2012-12-25 CN CN201280045787.2A patent/CN103814152A/en active Pending
- 2012-12-25 JP JP2013510149A patent/JP5654119B2/en active Active
- 2012-12-26 TW TW101150066A patent/TW201341561A/en unknown
-
2018
- 2018-05-03 US US15/969,958 patent/US10066290B1/en active Active
Also Published As
Publication number | Publication date |
---|---|
JP5654119B2 (en) | 2015-01-14 |
US20140284212A1 (en) | 2014-09-25 |
CN103814152A (en) | 2014-05-21 |
US20180251889A1 (en) | 2018-09-06 |
TW201341561A (en) | 2013-10-16 |
JPWO2013099832A1 (en) | 2015-05-07 |
US9988709B2 (en) | 2018-06-05 |
US10066290B1 (en) | 2018-09-04 |
WO2013099832A1 (en) | 2013-07-04 |
MY166187A (en) | 2018-06-07 |
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