SG11201401078QA - Sintered magnesium oxide target for sputtering, and method for producing same - Google Patents

Sintered magnesium oxide target for sputtering, and method for producing same

Info

Publication number
SG11201401078QA
SG11201401078QA SG11201401078QA SG11201401078QA SG11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA SG 11201401078Q A SG11201401078Q A SG 11201401078QA
Authority
SG
Singapore
Prior art keywords
sputtering
magnesium oxide
oxide target
producing same
sintered magnesium
Prior art date
Application number
SG11201401078QA
Inventor
Akira Hisano
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of SG11201401078QA publication Critical patent/SG11201401078QA/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/03Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite
    • C04B35/04Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on magnesium oxide, calcium oxide or oxide mixtures derived from dolomite based on magnesium oxide
    • C04B35/053Fine ceramics
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64Burning or sintering processes
    • C04B35/645Pressure sintering
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08Oxides
    • C23C14/081Oxides of aluminium, magnesium or beryllium
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/30Constituents and secondary phases not being of a fibrous nature
    • C04B2235/44Metal salt constituents or additives chosen for the nature of the anions, e.g. hydrides or acetylacetonate
    • C04B2235/442Carbonates
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/02Composition of constituents of the starting material or of secondary phases of the final product
    • C04B2235/50Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
    • C04B2235/54Particle size related information
    • C04B2235/5418Particle size related information expressed by the size of the particles or aggregates thereof
    • C04B2235/5445Particle size related information expressed by the size of the particles or aggregates thereof submicron sized, i.e. from 0,1 to 1 micron
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/72Products characterised by the absence or the low content of specific components, e.g. alkali metal free alumina ceramics
    • C04B2235/721Carbon content
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/74Physical characteristics
    • C04B2235/77Density
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/80Phases present in the sintered or melt-cast ceramic products other than the main phase
    • C04B2235/81Materials characterised by the absence of phases other than the main phase, i.e. single phase materials
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646Optical properties
    • CCHEMISTRY; METALLURGY
    • C04CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04BLIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/70Aspects relating to sintered or melt-casted ceramic products
    • C04B2235/96Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
    • C04B2235/9646Optical properties
    • C04B2235/9661Colour
SG11201401078QA 2011-12-27 2012-12-25 Sintered magnesium oxide target for sputtering, and method for producing same SG11201401078QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011285757 2011-12-27
PCT/JP2012/083391 WO2013099832A1 (en) 2011-12-27 2012-12-25 Sintered magnesium oxide target for sputtering, and method for producing same

Publications (1)

Publication Number Publication Date
SG11201401078QA true SG11201401078QA (en) 2014-09-26

Family

ID=48697317

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201401078QA SG11201401078QA (en) 2011-12-27 2012-12-25 Sintered magnesium oxide target for sputtering, and method for producing same

Country Status (7)

Country Link
US (2) US9988709B2 (en)
JP (1) JP5654119B2 (en)
CN (1) CN103814152A (en)
MY (1) MY166187A (en)
SG (1) SG11201401078QA (en)
TW (1) TW201341561A (en)
WO (1) WO2013099832A1 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014073387A1 (en) * 2012-11-07 2014-05-15 日本碍子株式会社 Ceramic material and sputtering-target member
KR102142037B1 (en) * 2012-11-07 2020-08-06 엔지케이 인슐레이터 엘티디 Ceramic material and sputtering-target member
US20200010368A1 (en) * 2016-07-13 2020-01-09 Tosoh Smd, Inc. Magnesium oxide sputtering target and method of making same
CN106587940B (en) * 2016-12-02 2020-03-27 有研亿金新材料有限公司 High-purity compact magnesium oxide target material and preparation method thereof
US10704139B2 (en) * 2017-04-07 2020-07-07 Applied Materials, Inc. Plasma chamber target for reducing defects in workpiece during dielectric sputtering
JP6925165B2 (en) * 2017-05-19 2021-08-25 Jx金属株式会社 Sputtering target
US11345990B2 (en) 2018-09-13 2022-05-31 Jx Nippon Mining & Metals Corporation MgO sintered sputtering target
SG11202102958VA (en) 2018-10-10 2021-04-29 Jx Nippon Mining & Metals Corp Magnesium oxide sputtering target
US11676632B2 (en) * 2019-12-26 2023-06-13 Resonac Corporation Magnetic recording medium, method of manufacturing magnetic recording medium and magnetic storage device
US11227751B1 (en) 2020-07-01 2022-01-18 Applied Materials, Inc. Plasma chamber target for reducing defects in workpiece during dielectric sputtering

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10130827A (en) * 1996-10-28 1998-05-19 Mitsubishi Materials Corp Mgo target and its production
JPH10130828A (en) * 1996-10-31 1998-05-19 Mitsubishi Materials Corp Mgo target and its production
JPH10158826A (en) 1996-12-04 1998-06-16 Mitsubishi Materials Corp Mgo target and its production
JPH10237636A (en) 1997-02-21 1998-09-08 Mitsubishi Materials Corp Target essentially consisting of mgo and its production
JP3417457B2 (en) 1997-06-13 2003-06-16 三菱マテリアル株式会社 Target containing MgO as main component and method for producing the same
US6056857A (en) * 1997-08-13 2000-05-02 Praxair S.T. Technology, Inc. Cryogenic annealing of sputtering targets
JPH11139862A (en) 1997-11-04 1999-05-25 Sumitomo Metal Mining Co Ltd High density magnesium oxide sintered compact and its production
JP3494205B2 (en) 1998-05-28 2004-02-09 三菱マテリアル株式会社 Target material containing MgO as a main component and method for producing the same
JP2000169956A (en) 1998-12-03 2000-06-20 Japan Energy Corp Magnesium oxide target for sputtering and its production
US6500321B1 (en) * 1999-05-26 2002-12-31 Novellus Systems, Inc. Control of erosion profile and process characteristics in magnetron sputtering by geometrical shaping of the sputtering target
CN1326909A (en) 2000-12-28 2001-12-19 蒋政 High density indium-tin oxide target material and its producing method
JP4904645B2 (en) * 2001-08-10 2012-03-28 東ソー株式会社 Method for producing Mg-containing ITO sputtering target
TW200300455A (en) * 2001-11-30 2003-06-01 Mitsubishi Materials Corp MgO deposition material and production method of the same
US6652668B1 (en) * 2002-05-31 2003-11-25 Praxair S.T. Technology, Inc. High-purity ferromagnetic sputter targets and method of manufacture
CN1856591B (en) * 2003-09-26 2010-12-08 株式会社东芝 Sputtering target and process for producing Si oxide film therewith
JP2008189493A (en) * 2007-02-02 2008-08-21 Sumitomo Electric Ind Ltd POLYCRYSTALLINE MgO SINTERED BODY
JP5231823B2 (en) * 2008-01-28 2013-07-10 日本タングステン株式会社 Polycrystalline MgO sintered body, method for producing the same, and MgO target for sputtering
JP4715859B2 (en) * 2008-04-15 2011-07-06 パナソニック株式会社 Plasma display device
WO2010029702A1 (en) * 2008-09-09 2010-03-18 キヤノンアネルバ株式会社 Method for manufacturing magnetoresistive element, and storage medium used in the manufacturing method
FR2937320B1 (en) * 2008-10-17 2011-07-29 Saint Gobain Ct Recherches PROCESS FOR PRODUCING A MOLTEN CERAMIC PRODUCT, PRODUCT OBTAINED, AND USES THEREOF
CN101575203B (en) * 2009-06-19 2013-01-16 西北稀有金属材料研究院 Preparation method of ITO sputtering target material
KR20140016386A (en) * 2010-01-07 2014-02-07 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 Sputtering target, compound semiconductor thin film, solar cell having compound semiconductor thin film, and method for manufacturing compound semiconductor thin film
CN102198954A (en) * 2011-04-22 2011-09-28 辽宁中大超导材料有限公司 Impurity control method for sintered body magnesium oxide target
CN102212781B (en) 2011-05-10 2013-09-11 孔伟华 Method for manufacturing high-density and low-cost zinc oxide aluminum sputtering target
US20160340255A1 (en) * 2014-01-29 2016-11-24 Hewlett-Packard Development Company, L.P. Oxygen conducting bismuth perovskite material
US10267761B2 (en) * 2016-06-14 2019-04-23 Delphi Technologies Ip Limited Material for sensing electrode of NOX gas sensor

Also Published As

Publication number Publication date
JP5654119B2 (en) 2015-01-14
US20140284212A1 (en) 2014-09-25
CN103814152A (en) 2014-05-21
US20180251889A1 (en) 2018-09-06
TW201341561A (en) 2013-10-16
JPWO2013099832A1 (en) 2015-05-07
US9988709B2 (en) 2018-06-05
US10066290B1 (en) 2018-09-04
WO2013099832A1 (en) 2013-07-04
MY166187A (en) 2018-06-07

Similar Documents

Publication Publication Date Title
EP2703519A4 (en) Sputtering target and method for producing same
SG11201401078QA (en) Sintered magnesium oxide target for sputtering, and method for producing same
TWI561655B (en) Sputtering target, method for manufacturing sputtering target, and method for forming thin film
SG11201505097QA (en) Method for using sputtering target and method for manufacturing oxide film
EP2532634A4 (en) Method for manufacturing sintered licoo2, and sputtering target
SG11201403319RA (en) Silver-alloy sputtering target for conductive-film formation, and method for producing same
EP2548993A4 (en) Sputtering target and manufacturing method therefor
IL231042B (en) Sputtering target and manufacturing method therefor
EP2684978A4 (en) Cu-Ga ALLOY SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
EP2524904A4 (en) MANUFACTURING METHOD FOR LiCoO2 SINTERED BODY, AND SPUTTERING TARGET MADE FROM SAME
ZA201305472B (en) Method for producing high-purity lanthanum,high-purity lanthanum,sputtering target formed from high-purity lanthanum,and metal gate film having high-purity lanthanum as main component
SG11201405335SA (en) Fe-co-based alloy sputtering target material, and method ofproducing same
SG11201500762SA (en) Fe-Pt-BASED SINTERED COMPACT SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR
IL230843A0 (en) Tantalum sputtering target and method for manufacturing same
EP2829636A4 (en) Oxide sintered body and sputtering target, and method for manufacturing same
EP2784173A4 (en) Sputtering target and method for producing same
EP2796411A4 (en) Method for producing magnesium oxide
SG11201403857TA (en) Co-Cr-Pt-BASED SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
EP2772564A4 (en) Indium sputtering target, and method for producing same
EP2818574A4 (en) Sputtering target and process for producing same
IL237919B (en) Tantalum sputtering target and method for producing same
SG10201505733SA (en) Sputtering target and/or coil, and process for producing same
EP2907891A4 (en) Tungsten-sintered-body sputtering target and method for producing same
EP2772327A4 (en) High-purity titanium ingots, manufacturing method therefor, and titanium sputtering target
EP2857547A4 (en) Sputtering target for rare-earth magnet and production method therefor