MY175025A - Fe-pt based sintered compact sputtering target and manufacturing method therefor - Google Patents

Fe-pt based sintered compact sputtering target and manufacturing method therefor

Info

Publication number
MY175025A
MY175025A MYPI2015700905A MYPI2015700905A MY175025A MY 175025 A MY175025 A MY 175025A MY PI2015700905 A MYPI2015700905 A MY PI2015700905A MY PI2015700905 A MYPI2015700905 A MY PI2015700905A MY 175025 A MY175025 A MY 175025A
Authority
MY
Malaysia
Prior art keywords
sputtering target
sintered compact
based sintered
plane
manufacturing
Prior art date
Application number
MYPI2015700905A
Inventor
Shin-Ichi Ogino
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY175025A publication Critical patent/MY175025A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C33/00—Making ferrous alloys
    • C22C33/02—Making ferrous alloys by powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

An Fe-Pt-based sintered compact sputtering target containing BN, wherein a ratio of an X-ray diffraction peak intensity of a hexagonal BN (002) plane in a cross section that is perpendicular to a sputtering surface relative to an X-ray diffraction peak intensity of a hexagonal BN (002) plane in a plane that is horizontal to a sputtering surface is 2 or more. The present invention aims to provide a sputtering target which enables the production of a magnetic thin film in a thermally assisted magnetic recording media, and the reduction of particles that are generated during sputtering.
MYPI2015700905A 2012-10-23 2013-10-18 Fe-pt based sintered compact sputtering target and manufacturing method therefor MY175025A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2012233999 2012-10-23

Publications (1)

Publication Number Publication Date
MY175025A true MY175025A (en) 2020-06-03

Family

ID=50544581

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2015700905A MY175025A (en) 2012-10-23 2013-10-18 Fe-pt based sintered compact sputtering target and manufacturing method therefor

Country Status (6)

Country Link
JP (1) JP5913620B2 (en)
CN (1) CN104781446B (en)
MY (1) MY175025A (en)
SG (1) SG11201500762SA (en)
TW (1) TWI616548B (en)
WO (1) WO2014065201A1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016047236A1 (en) 2014-09-22 2016-03-31 Ｊｘ金属株式会社 Sputtering target for magnetic recording film formation and production method therefor
JP6553755B2 (en) * 2016-02-19 2019-07-31 Ｊｘ金属株式会社 Sputtering target for magnetic recording media and magnetic thin film
US20200332410A1 (en) * 2016-06-24 2020-10-22 Tosoh Smd, Inc. Tungsten-boron sputter targets and films made thereby
CN108076646B (en) * 2016-09-12 2019-12-13 Ｊｘ金属株式会社 Ferromagnetic material sputtering target
US20200171582A1 (en) * 2018-03-19 2020-06-04 Sumitomo Electric Industries, Ltd. Surface-coated cutting tool
JP7057692B2 (en) * 2018-03-20 2022-04-20 田中貴金属工業株式会社 Fe-Pt-Oxide-BN-based sintered body for sputtering target
JP6989427B2 (en) 2018-03-23 2022-01-05 昭和電工株式会社 Magnetic recording medium and magnetic recording / playback device
JP7049182B2 (en) 2018-05-21 2022-04-06 昭和電工株式会社 Magnetic recording medium and magnetic storage device
JP7104001B2 (en) * 2019-06-28 2022-07-20 田中貴金属工業株式会社 Fe-Pt-BN-based sputtering target and its manufacturing method
CN114072536B (en) * 2019-07-12 2024-06-07 田中贵金属工业株式会社 Fe-Pt-BN sputtering target and method for producing same
TWI752655B (en) * 2020-09-25 2022-01-11 光洋應用材料科技股份有限公司 Fe-pt based sputtering target and method of preparing the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2934120B2 (en) * 1992-07-02 1999-08-16 信越化学工業株式会社 Pyrolytic boron nitride container
JP2694110B2 (en) * 1993-09-09 1997-12-24 株式会社アモルファス・電子デバイス研究所 Magnetic thin film and method of manufacturing the same
JP3786453B2 (en) * 1994-07-11 2006-06-14 株式会社東芝 Magnetic recording medium and magnetic recording / reproducing apparatus
JPH0950618A (en) * 1995-08-04 1997-02-18 Victor Co Of Japan Ltd Magnetic recording medium and its production
JP3328692B2 (en) * 1999-04-26 2002-09-30 東北大学長 Manufacturing method of magnetic recording medium
JP4175829B2 (en) * 2002-04-22 2008-11-05 株式会社東芝 Sputtering target for recording medium and magnetic recording medium
US20080210555A1 (en) * 2007-03-01 2008-09-04 Heraeus Inc. High density ceramic and cermet sputtering targets by microwave sintering
CN101255546A (en) * 2007-03-01 2008-09-03 贺利氏有限公司 High density ceramic and cermet sputtering targets by microwave sintering

Also Published As

Publication number Publication date
CN104781446A (en) 2015-07-15
WO2014065201A1 (en) 2014-05-01
CN104781446B (en) 2017-03-08
TWI616548B (en) 2018-03-01
TW201428119A (en) 2014-07-16
SG11201500762SA (en) 2015-05-28
JP5913620B2 (en) 2016-04-27
JPWO2014065201A1 (en) 2016-09-08

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