SG11201407361PA - Process for treating a semiconductor-on-insulator structure for improving thickness uniformity of the semiconductor layer - Google Patents
Process for treating a semiconductor-on-insulator structure for improving thickness uniformity of the semiconductor layerInfo
- Publication number
- SG11201407361PA SG11201407361PA SG11201407361PA SG11201407361PA SG11201407361PA SG 11201407361P A SG11201407361P A SG 11201407361PA SG 11201407361P A SG11201407361P A SG 11201407361PA SG 11201407361P A SG11201407361P A SG 11201407361PA SG 11201407361P A SG11201407361P A SG 11201407361PA
- Authority
- SG
- Singapore
- Prior art keywords
- semiconductor layer
- international
- thickness
- semiconductor
- layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 11
- 239000012212 insulator Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 238000005530 etching Methods 0.000 abstract 2
- 238000013507 mapping Methods 0.000 abstract 2
- 238000005259 measurement Methods 0.000 abstract 2
- 230000006870 function Effects 0.000 abstract 1
- 238000002402 nanowire electron scattering Methods 0.000 abstract 1
- 230000008520 organization Effects 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1254841A FR2991099B1 (fr) | 2012-05-25 | 2012-05-25 | Procede de traitement d'une structure semi-conducteur sur isolant en vue d'uniformiser l'epaisseur de la couche semi-conductrice |
PCT/IB2013/000857 WO2013175278A1 (fr) | 2012-05-25 | 2013-05-01 | Procédé de traitement d'une structure de semi-conducteur sur isolant afin d'améliorer l'uniformité de l'épaisseur de la couche semi-conductrice |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201407361PA true SG11201407361PA (en) | 2014-12-30 |
Family
ID=48536940
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201407361PA SG11201407361PA (en) | 2012-05-25 | 2013-05-01 | Process for treating a semiconductor-on-insulator structure for improving thickness uniformity of the semiconductor layer |
Country Status (7)
Country | Link |
---|---|
US (1) | US9190284B2 (fr) |
KR (1) | KR102068189B1 (fr) |
CN (1) | CN104380447B (fr) |
DE (1) | DE112013002675T5 (fr) |
FR (1) | FR2991099B1 (fr) |
SG (1) | SG11201407361PA (fr) |
WO (1) | WO2013175278A1 (fr) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2995444B1 (fr) * | 2012-09-10 | 2016-11-25 | Soitec Silicon On Insulator | Procede de detachement d'une couche |
JP6354363B2 (ja) * | 2014-06-12 | 2018-07-11 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US10373838B2 (en) * | 2015-12-08 | 2019-08-06 | Elemental Scientific, Inc. | Automatic sampling of hot phosphoric acid for the determination of chemical element concentrations and control of semiconductor processes |
JP6673173B2 (ja) * | 2016-12-12 | 2020-03-25 | 三菱電機株式会社 | 半導体装置の製造方法 |
FR3106236B1 (fr) | 2020-01-15 | 2021-12-10 | Soitec Silicon On Insulator | Procédé de fabrication d’un capteur d’image |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5213657A (en) * | 1991-07-31 | 1993-05-25 | Shin-Etsu Handotai Kabushiki Kaisha | Method for making uniform the thickness of a si single crystal thin film |
FR2777115B1 (fr) * | 1998-04-07 | 2001-07-13 | Commissariat Energie Atomique | Procede de traitement de substrats semi-conducteurs et structures obtenues par ce procede |
JP2000173976A (ja) * | 1998-12-02 | 2000-06-23 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US20040087042A1 (en) * | 2002-08-12 | 2004-05-06 | Bruno Ghyselen | Method and apparatus for adjusting the thickness of a layer of semiconductor material |
JP4684650B2 (ja) | 2002-08-12 | 2011-05-18 | エス.オー.アイ.テック、シリコン、オン、インシュレター、テクノロジーズ | 薄層を形成する方法、犠牲酸化によって厚みを補正するステップを含む方法、及び関連する機械 |
US20040060899A1 (en) * | 2002-10-01 | 2004-04-01 | Applied Materials, Inc. | Apparatuses and methods for treating a silicon film |
US20060014363A1 (en) * | 2004-03-05 | 2006-01-19 | Nicolas Daval | Thermal treatment of a semiconductor layer |
DE102004054566B4 (de) * | 2004-11-11 | 2008-04-30 | Siltronic Ag | Verfahren und Vorrichtung zum Einebnen einer Halbleiterscheibe sowie Halbleiterscheibe mit verbesserter Ebenheit |
JP2006216826A (ja) * | 2005-02-04 | 2006-08-17 | Sumco Corp | Soiウェーハの製造方法 |
EP2095406A1 (fr) * | 2006-12-26 | 2009-09-02 | S.O.I.Tec Silicon on Insulator Technologies | Procédé de production d'une structure semiconducteur sur isolant |
DE102007006151B4 (de) * | 2007-02-07 | 2008-11-06 | Siltronic Ag | Verfahren zur Verringerung und Homogenisierung der Dicke einer Halbleiterschicht, die sich auf der Oberfläche eines elektrisch isolierenden Materials befindet |
FR2912839B1 (fr) | 2007-02-16 | 2009-05-15 | Soitec Silicon On Insulator | Amelioration de la qualite de l'interface de collage par nettoyage froid et collage a chaud |
US7972969B2 (en) * | 2008-03-06 | 2011-07-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method and apparatus for thinning a substrate |
-
2012
- 2012-05-25 FR FR1254841A patent/FR2991099B1/fr active Active
-
2013
- 2013-05-01 KR KR1020147032558A patent/KR102068189B1/ko active IP Right Grant
- 2013-05-01 SG SG11201407361PA patent/SG11201407361PA/en unknown
- 2013-05-01 WO PCT/IB2013/000857 patent/WO2013175278A1/fr active Application Filing
- 2013-05-01 DE DE201311002675 patent/DE112013002675T5/de active Pending
- 2013-05-01 CN CN201380026524.1A patent/CN104380447B/zh active Active
- 2013-05-01 US US14/397,287 patent/US9190284B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20150021499A (ko) | 2015-03-02 |
WO2013175278A1 (fr) | 2013-11-28 |
FR2991099A1 (fr) | 2013-11-29 |
US9190284B2 (en) | 2015-11-17 |
US20150118764A1 (en) | 2015-04-30 |
FR2991099B1 (fr) | 2014-05-23 |
CN104380447B (zh) | 2017-05-03 |
DE112013002675T5 (de) | 2015-03-19 |
CN104380447A (zh) | 2015-02-25 |
KR102068189B1 (ko) | 2020-01-20 |
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