SG11201806324UA - Memory cell, memory device, and methods of forming the same - Google Patents

Memory cell, memory device, and methods of forming the same

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Publication number
SG11201806324UA
SG11201806324UA SG11201806324UA SG11201806324UA SG11201806324UA SG 11201806324U A SG11201806324U A SG 11201806324UA SG 11201806324U A SG11201806324U A SG 11201806324UA SG 11201806324U A SG11201806324U A SG 11201806324UA SG 11201806324U A SG11201806324U A SG 11201806324UA
Authority
SG
Singapore
Prior art keywords
layer
international
innovis
singapore
tower
Prior art date
Application number
SG11201806324UA
Inventor
Hideaki Fukuzawa
Jun Yu
Michael Han
Xinpeng Wang
Vladimir Bliznetsov
Original Assignee
Agency Science Tech & Res
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency Science Tech & Res filed Critical Agency Science Tech & Res
Publication of SG11201806324UA publication Critical patent/SG11201806324UA/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/13—Amorphous metallic alloys, e.g. glassy metals
    • H01F10/131—Amorphous metallic alloys, e.g. glassy metals containing iron or nickel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H01F10/187—Amorphous compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/329—Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)

Abstract

INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property -, Organization MD 1111101110101011111 Mt 01110111011 01 10111101111111101111011# International Bureau 0.. .... .. (10) International Publication Number (43) International Publication Date ..... .....!;,' WO 2017/131584 Al 3 August 2017 (03.08.2017) WI P0 I P CT — (51) (21) (22) (25) Filing Language: (26) Publication Language: (30) (71) Applicant: AGENCY FOR SCIENCE, TECHNOLOGY (72) International Patent Classification: tronics, 2 Fusionopolis Way, #08-02 Innovis Tower, Singa- H01L 43/10 (2006.01) G11C 11/16 (2006.01) pore 138634 (SG). BLIZNETSOV, Vladimir; c/o In- G11C 11/15 (2006.01) dustry Development, Institute of Microelectronics, 2 Fu- International Application Number: sionopolis Way, #08-02 Innovis Tower, Singapore 138634 PCT/SG2017/050028 (SG). (74) Agent: VIERING, JENTSCHURA & PARTNER LLP; International Filing Date: P.O. Box 1088, Rochor Post Office, Rochor Road, Singa- 19 January 2017 (19.01.2017) pore 911833 (SG). English (81) Designated States (unless otherwise indicated, for every English kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, Priority Data: BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, 10201600735X 29 January 2016 (29.01.2016) SG DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, AND RESEARCH [SG/SG]; 1 Fusionopolis Way, #20-10 KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, Connexis, Singapore 138632 (SG). MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, Inventors: FUKUZAWA, Hideaki; c/o Industry Develop- RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, ment, Institute of Microelectronics, 2 Fusionopolis Way, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, #08-02 Innovis Tower, Singapore 138634 (SG). YU, Jun; ZA, ZM, ZW. c/o Industry Development, Institute of Microelectronics, 2 Fusionopolis Way, #08-02 Innovis Tower, Singapore (84) Designated States (unless otherwise indicated, for every 138634 (SG). HAN, Michael; c/o Industry Development, kind of regional protection available): ARIPO (BW, GH, Institute of Microelectronics, 2 Fusionopolis Way, #08-02 GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, Innovis Tower, Singapore 138634 (SG). WANG, Xin- TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, peng; c/o Industry Development, Institute of Microelec- TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, [Continued on next page] — = Title: MEMORY CELL, MEMORY DEVICE, AND METHODS OF FORMING THE SAME FIG. 3 r (57) : Various embodiments may provide a memory cell including a magnetic pinned layer with a substantially j 300 fixed magnetization direction, a crystalline spacer layer in contact with the magnetic pinned layer, and a magnetic stor- age layer. The magnetic storage layer may include an amorphous interface sub-layer in contact with the crystalline 308 spacer layer, the amorphous interface sub-layer including a first alloy of iron (Fe) and at least one element. The amorph- ous storage layer may also include an amorphous enhance- 306b ment sub-layer in contact with the amorphous interface sub- layer, the amorphous enhancement sub-layer including a second alloy of iron (Fe) and at least one element. The 306a memory cell may additionally include a cap layer in contact with the amorphous enhancement sub-layer. A concentration of the at least one further element comprised in the first alloy and a concentration of the at least one further element 304 com- prised in the second alloy may be different. 302 — (54) = = = = = = 306 — — = 1-1 iv Ot in Il M Il --.... IN Il 0 ei O WO 2017/131584 All#11101M01101DEIRMEDEMIOMOIEM111111111111110110111111 LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, Published: SM, TR), GW, KM, ML, MR, NE, SN, OAPI (BF, BJ, CF, CG, CI, CM, TD, TG). GA, GN, GQ, with international search report (Art. 21(3))
SG11201806324UA 2016-01-29 2017-01-19 Memory cell, memory device, and methods of forming the same SG11201806324UA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SG10201600735X 2016-01-29
PCT/SG2017/050028 WO2017131584A1 (en) 2016-01-29 2017-01-19 Memory cell, memory device, and methods of forming the same

Publications (1)

Publication Number Publication Date
SG11201806324UA true SG11201806324UA (en) 2018-08-30

Family

ID=59398826

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201806324UA SG11201806324UA (en) 2016-01-29 2017-01-19 Memory cell, memory device, and methods of forming the same

Country Status (3)

Country Link
US (1) US20210104659A1 (en)
SG (1) SG11201806324UA (en)
WO (1) WO2017131584A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10622047B2 (en) 2018-03-23 2020-04-14 Taiwan Semiconductor Manufacturing Company, Ltd. Free layer structure in magnetic random access memory (MRAM) for Mo or W perpendicular magnetic anisotropy (PMA) enhancing layer
US10522752B1 (en) 2018-08-22 2019-12-31 Taiwan Semiconductor Manufacturing Company, Ltd. Magnetic layer for magnetic random access memory (MRAM) by moment enhancement
EP3739640B1 (en) 2019-05-13 2022-08-24 IMEC vzw A layer stack for a magnetic tunnel junction device
WO2020230771A1 (en) * 2019-05-16 2020-11-19 Tdk株式会社 Magnetic domain wall moving element and magnetic recording array
US11355697B2 (en) * 2019-11-25 2022-06-07 The Board Of Trustees Of The Leland Stanford Junior University Nanometer scale nonvolatile memory device and method for storing binary and quantum memory states
TWI724968B (en) * 2020-09-07 2021-04-11 光洋應用材料科技股份有限公司 Non-ferromagnetic spacing composite layer, its method, synthetic antiferromagnetic laminated structure, and magnetoresistive random access memory

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100586267B1 (en) * 2005-03-09 2006-06-08 학교법인고려중앙학원 Magnetic tunnel junctions employing amorphous nifesib free layer
US9070464B2 (en) * 2010-12-10 2015-06-30 Avalanche Technology, Inc. Magnetic random access memory (MRAM) with enhanced magnetic stiffness and method of making same
US8790798B2 (en) * 2011-04-18 2014-07-29 Alexander Mikhailovich Shukh Magnetoresistive element and method of manufacturing the same

Also Published As

Publication number Publication date
US20210104659A1 (en) 2021-04-08
WO2017131584A1 (en) 2017-08-03

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