FR3106236B1 - Procédé de fabrication d’un capteur d’image - Google Patents

Procédé de fabrication d’un capteur d’image Download PDF

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Publication number
FR3106236B1
FR3106236B1 FR2000345A FR2000345A FR3106236B1 FR 3106236 B1 FR3106236 B1 FR 3106236B1 FR 2000345 A FR2000345 A FR 2000345A FR 2000345 A FR2000345 A FR 2000345A FR 3106236 B1 FR3106236 B1 FR 3106236B1
Authority
FR
France
Prior art keywords
substrate
semiconductor layer
image sensor
pixel
donor substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR2000345A
Other languages
English (en)
Other versions
FR3106236A1 (fr
Inventor
Walter Schwarzenbach
David Herisson
Alain Delpy
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Soitec SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Soitec SA filed Critical Soitec SA
Priority to FR2000345A priority Critical patent/FR3106236B1/fr
Priority to TW110101307A priority patent/TW202135146A/zh
Priority to CN202180009224.7A priority patent/CN115039226A/zh
Priority to JP2022542040A priority patent/JP2023510285A/ja
Priority to PCT/FR2021/050059 priority patent/WO2021144534A1/fr
Priority to KR1020227027258A priority patent/KR20220127279A/ko
Priority to EP21719689.8A priority patent/EP4091197A1/fr
Priority to US17/758,848 priority patent/US20230039295A1/en
Publication of FR3106236A1 publication Critical patent/FR3106236A1/fr
Application granted granted Critical
Publication of FR3106236B1 publication Critical patent/FR3106236B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/1469—Assemblies, i.e. hybrid integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14698—Post-treatment for the devices, e.g. annealing, impurity-gettering, shor-circuit elimination, recrystallisation

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Element Separation (AREA)

Abstract

L’invention concerne un procédé de fabrication d’un capteur d’image, comprenant :- la fourniture d’un substrat receveur (1) comprenant un substrat de base (10) et une couche active comprenant des pixels (11), chaque pixel comprenant une région dopée (12) de collecte des charges électriques générées dans le pixel,- la fourniture d’un substrat donneur (2) comprenant une zone de fragilisation (200) délimitant une couche semi-conductrice monocristalline (201),- le collage du substrat donneur (2) sur le substrat receveur (1),- le détachement du substrat donneur (2) le long de la zone de fragilisation (200), de sorte à transférer la couche semi-conductrice (201) sur le substrat receveur (1),- la mise en œuvre d’un traitement de finition de la couche semi-conductrice (201) transférée, ledit traitement de finition comprenant (i) un amincissement de la couche transférée par oxydation sacrificielle suivie d’une gravure chimique et (ii) au moins un recuit rapide. Figure pour l’abrégé : Fig 2
FR2000345A 2020-01-15 2020-01-15 Procédé de fabrication d’un capteur d’image Active FR3106236B1 (fr)

Priority Applications (8)

Application Number Priority Date Filing Date Title
FR2000345A FR3106236B1 (fr) 2020-01-15 2020-01-15 Procédé de fabrication d’un capteur d’image
TW110101307A TW202135146A (zh) 2020-01-15 2021-01-13 用於製作感光元件之方法
JP2022542040A JP2023510285A (ja) 2020-01-15 2021-01-14 画像センサを作製するプロセス
PCT/FR2021/050059 WO2021144534A1 (fr) 2020-01-15 2021-01-14 Procédé de fabrication d'un capteur d'image
CN202180009224.7A CN115039226A (zh) 2020-01-15 2021-01-14 用于制造图像传感器的方法
KR1020227027258A KR20220127279A (ko) 2020-01-15 2021-01-14 이미지 센서를 제조하기 위한 방법
EP21719689.8A EP4091197A1 (fr) 2020-01-15 2021-01-14 Procédé de fabrication d'un capteur d'image
US17/758,848 US20230039295A1 (en) 2020-01-15 2021-01-14 Method for manufacturing an image sensor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2000345 2020-01-15
FR2000345A FR3106236B1 (fr) 2020-01-15 2020-01-15 Procédé de fabrication d’un capteur d’image

Publications (2)

Publication Number Publication Date
FR3106236A1 FR3106236A1 (fr) 2021-07-16
FR3106236B1 true FR3106236B1 (fr) 2021-12-10

Family

ID=70804696

Family Applications (1)

Application Number Title Priority Date Filing Date
FR2000345A Active FR3106236B1 (fr) 2020-01-15 2020-01-15 Procédé de fabrication d’un capteur d’image

Country Status (8)

Country Link
US (1) US20230039295A1 (fr)
EP (1) EP4091197A1 (fr)
JP (1) JP2023510285A (fr)
KR (1) KR20220127279A (fr)
CN (1) CN115039226A (fr)
FR (1) FR3106236B1 (fr)
TW (1) TW202135146A (fr)
WO (1) WO2021144534A1 (fr)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040060899A1 (en) * 2002-10-01 2004-04-01 Applied Materials, Inc. Apparatuses and methods for treating a silicon film
FR2978603B1 (fr) * 2011-07-28 2013-08-23 Soitec Silicon On Insulator Procede de transfert d'une couche semi-conductrice monocristalline sur un substrat support
FR2991099B1 (fr) 2012-05-25 2014-05-23 Soitec Silicon On Insulator Procede de traitement d'une structure semi-conducteur sur isolant en vue d'uniformiser l'epaisseur de la couche semi-conductrice
US9570431B1 (en) * 2015-07-28 2017-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor wafer for integrated packages

Also Published As

Publication number Publication date
FR3106236A1 (fr) 2021-07-16
CN115039226A (zh) 2022-09-09
JP2023510285A (ja) 2023-03-13
EP4091197A1 (fr) 2022-11-23
WO2021144534A1 (fr) 2021-07-22
US20230039295A1 (en) 2023-02-09
TW202135146A (zh) 2021-09-16
KR20220127279A (ko) 2022-09-19

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