SG11201807434QA - A piezoelectric thin film element - Google Patents

A piezoelectric thin film element

Info

Publication number
SG11201807434QA
SG11201807434QA SG11201807434QA SG11201807434QA SG11201807434QA SG 11201807434Q A SG11201807434Q A SG 11201807434QA SG 11201807434Q A SG11201807434Q A SG 11201807434QA SG 11201807434Q A SG11201807434Q A SG 11201807434QA SG 11201807434Q A SG11201807434Q A SG 11201807434QA
Authority
SG
Singapore
Prior art keywords
piezoelectric thin
thin film
international
oxr
cambridge
Prior art date
Application number
SG11201807434QA
Inventor
Peter Mardilovich
Song-Won Ko
Susan Trolier-Mckinstry
Trent Borman
Original Assignee
Xaar Technology Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB1604457.0A external-priority patent/GB2548377A/en
Priority claimed from EP16160658.7A external-priority patent/EP3220431B1/en
Application filed by Xaar Technology Ltd filed Critical Xaar Technology Ltd
Publication of SG11201807434QA publication Critical patent/SG11201807434QA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/07Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
    • H10N30/074Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
    • H10N30/077Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
    • H10N30/078Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition by sol-gel deposition
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14201Structure of print heads with piezoelectric elements
    • B41J2/14233Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1607Production of print heads with piezoelectric elements
    • B41J2/161Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/16Production of nozzles
    • B41J2/1621Manufacturing processes
    • B41J2/164Manufacturing processes thin film formation
    • B41J2/1642Manufacturing processes thin film formation thin film formation by CVD [chemical vapor deposition]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/704Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/85Piezoelectric or electrostrictive active materials
    • H10N30/853Ceramic compositions
    • H10N30/8548Lead-based oxides
    • H10N30/8554Lead-zirconium titanate [PZT] based
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2/00Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
    • B41J2/005Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
    • B41J2/01Ink jet
    • B41J2/135Nozzles
    • B41J2/14Structure thereof only for on-demand ink jet heads
    • B41J2/14201Structure of print heads with piezoelectric elements
    • B41J2/14233Structure of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
    • B41J2002/14266Sheet-like thin film type piezoelectric element
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B41PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
    • B41JTYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
    • B41J2202/00Embodiments of or processes related to ink-jet or thermal heads
    • B41J2202/01Embodiments of or processes related to ink-jet heads
    • B41J2202/03Specific materials used
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/01Manufacture or treatment
    • H10N30/06Forming electrodes or interconnections, e.g. leads or terminals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/20Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators
    • H10N30/204Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators using bending displacement, e.g. unimorph, bimorph or multimorph cantilever or membrane benders
    • H10N30/2047Membrane type
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00Piezoelectric or electrostrictive devices
    • H10N30/80Constructional details
    • H10N30/87Electrodes or interconnections, e.g. leads or terminals
    • H10N30/877Conductive materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Particle Formation And Scattering Control In Inkjet Printers (AREA)
  • Semiconductor Memories (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)

Abstract

WO 17 / 15 83 45 Al (12) INTERNATIONAL APPLICATION PUBLISHED UNDER THE PATENT COOPERATION TREATY (PCT) (19) World Intellectual Property Organization International Bureau (10) International Publication Number (43) International Publication Date WO 2017/158345 Al 21 September 2017 (21.09.2017) WIPO I PCT (51) International Patent Classification: HO1L 41/187 (2006.01) H01L 41/08 (2006.01) HO1L 41/318 (2013.01) (21) International Application Number: PCT/GB2017/050696 (22) International Filing Date: 14 March 2017 (14.03.2017) (25) Filing Language: English (26) Publication Language: English (30) Priority Data: 16160658.7 16 March 2016 (16.03.2016) EP 1604457.0 16 March 2016 (16.03.2016) GB (71) Applicant: XAAR TECHNOLOGY LIMITED [GB/GB]; 316 Science Park, Cambridge CB4 OXR (GB). (72) Inventors: MARDILOVICH, Peter; c/o Xaar Technology Limited, 316 Science Park, Cambridge CB4 OXR (GB). KO, Song-Won; c/o Xaar Technology Limited, 316 Sci- ence Park, Cambridge CB4 OXR (GB). TRO- LIER-MCKINSTRY, Susan; The Pennsylvania State University, N-227 Millennium Science Complex, Univer- sity Park, Philadelphia, Pennsylvania 16802 (US). BOR- MAN, Trent; c/o Xaar Technology Limited, 316 Science Park, Cambridge CB4 OXR (GB). (74) Agent: TLIP LTD; Leeds Innovation Centre, 103 Claren- don Road, Leeds Yorkshire LS2 9DF (GB). (81) Designated States (unless otherwise indicated, for every kind of national protection available): AE, AG, AL, AM, AO, AT, AU, AZ, BA, BB, BG, BH, BN, BR, BW, BY, BZ, CA, CH, CL, CN, CO, CR, CU, CZ, DE, DJ, DK, DM, DO, DZ, EC, EE, EG, ES, FI, GB, GD, GE, GH, GM, GT, HN, HR, HU, ID, IL, IN, IR, IS, JP, KE, KG, KH, KN, KP, KR, KW, KZ, LA, LC, LK, LR, LS, LU, LY, MA, MD, ME, MG, MK, MN, MW, MX, MY, MZ, NA, NG, NI, NO, NZ, OM, PA, PE, PG, PH, PL, PT, QA, RO, RS, RU, RW, SA, SC, SD, SE, SG, SK, SL, SM, ST, SV, SY, TH, TJ, TM, TN, TR, TT, TZ, UA, UG, US, UZ, VC, VN, ZA, ZM, ZW. (84) Designated States (unless otherwise indicated, for every kind of regional protection available): ARIPO (BW, GH, GM, KE, LR, LS, MW, MZ, NA, RW, SD, SL, ST, SZ, TZ, UG, ZM, ZW), Eurasian (AM, AZ, BY, KG, KZ, RU, TJ, TM), European (AL, AT, BE, BG, CH, CY, CZ, DE, DK, EE, ES, FI, FR, GB, GR, HR, HU, IE, IS, IT, LT, LU, LV, MC, MK, MT, NL, NO, PL, PT, RO, RS, SE, SI, SK, SM, TR), OAPI (BF, BJ, CF, CG, CI, CM, GA, GN, GQ, GW, KM, ML, MR, NE, SN, TD, TG). Published: — with international search report (Art. 21(3)) (54) Title: A PIEZOELECTRIC THIN FILM ELEMENT 111111111111110111011111111111010111110111011111111111110111111111111111111111110111111 20 \ 24 22 25 -S--- 23 FIG. 6 (57) : A piezoelectric thin film element comprising a first electrode, a second electrode and one or more piezoelectric thin films there between wherein the first electrode is a platinum metal electrode having an average grain size greater than 50 nm and wherein a piezoelectric thin film adjacent the platinum metal electrode comprises a laminate having a plurality of piezoelectric thin film layers wherein a piezoelectric thin film layer contacting the platinum metal electrode comprises lead zirconate titanate (PZT) of composition at or about PbZr,,Tii-.03 where 0 < x < 0.60 and has a degree of pseudo cubic {100} orientation greater than or equal to 90%.
SG11201807434QA 2016-03-16 2017-03-14 A piezoelectric thin film element SG11201807434QA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB1604457.0A GB2548377A (en) 2016-03-16 2016-03-16 A piezoelectric thin film element
EP16160658.7A EP3220431B1 (en) 2016-03-16 2016-03-16 A piezoelectric thin film element
PCT/GB2017/050696 WO2017158345A1 (en) 2016-03-16 2017-03-14 A piezoelectric thin film element

Publications (1)

Publication Number Publication Date
SG11201807434QA true SG11201807434QA (en) 2018-09-27

Family

ID=58361039

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201807434QA SG11201807434QA (en) 2016-03-16 2017-03-14 A piezoelectric thin film element

Country Status (8)

Country Link
US (1) US10541360B2 (en)
JP (1) JP6967008B2 (en)
CN (1) CN108780839A (en)
BR (1) BR112018068168A2 (en)
IL (1) IL261463A (en)
MX (1) MX2018011197A (en)
SG (1) SG11201807434QA (en)
WO (1) WO2017158345A1 (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7130950B2 (en) * 2017-12-13 2022-09-06 セイコーエプソン株式会社 Piezoelectric element and liquid ejection head
KR102137238B1 (en) * 2018-08-31 2020-07-23 울산대학교 산학협력단 Sulfur substitution technique based on chemical solution method
CN111029402A (en) * 2019-11-14 2020-04-17 天津大学 Flexible bottom gate thin film transistor of zirconium-titanium oxide gate dielectric layer and manufacturing method thereof
IT202000016861A1 (en) 2020-07-10 2022-01-10 Evoca Spa GLASS DISPENSER FOR A DRINK VENDING MACHINE
JP2022073090A (en) * 2020-10-30 2022-05-17 セイコーエプソン株式会社 Liquid discharge head and actuator
US20240065105A1 (en) * 2022-08-17 2024-02-22 Fujifilm Dimatix, Inc. Process of epitaxial grown pzt film and method of making a pzt device

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04259380A (en) * 1991-02-13 1992-09-14 Mitsubishi Materials Corp Method for controlling crystalline orientation property of pzt ferroelectric body thin film
JP2995290B2 (en) * 1998-02-03 1999-12-27 工業技術院長 Method of forming PZT-based ferroelectric thin film
GB9909375D0 (en) * 1999-04-24 1999-06-23 Secr Defence Improvements in or relating to sol gel processing of lead zirconate titanate thin films
US6623865B1 (en) * 2000-03-04 2003-09-23 Energenius, Inc. Lead zirconate titanate dielectric thin film composites on metallic foils
US6682772B1 (en) 2000-04-24 2004-01-27 Ramtron International Corporation High temperature deposition of Pt/TiOx for bottom electrodes
US7023036B2 (en) 2001-10-02 2006-04-04 Matsushita Electric Industrial Co., Ltd. Ferroelectric element and actuator using the same, and ink jet head and ink jet recording device
US6620237B2 (en) 2001-11-15 2003-09-16 Spectra, Inc. Oriented piezoelectric film
JP4122430B2 (en) * 2003-03-26 2008-07-23 独立行政法人産業技術総合研究所 Ferroelectric film
CN1283129C (en) * 2003-05-01 2006-11-01 清华大学 Microacoustic device based on clamped diaphragm structure and mfg. method thereof
US7193756B2 (en) * 2003-11-26 2007-03-20 Matsushita Electric Industrial Co., Ltd. Piezoelectric element, method for fabricating the same, inkjet head, method for fabricating the same, and inkjet recording apparatus
JP4192794B2 (en) 2004-01-26 2008-12-10 セイコーエプソン株式会社 Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, thin film piezoelectric resonator, and electronic device
JP4224708B2 (en) 2004-05-17 2009-02-18 セイコーエプソン株式会社 Piezoelectric element, piezoelectric actuator, ink jet recording head, ink jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, thin film piezoelectric resonator, and electronic device
JP4605349B2 (en) 2004-07-15 2011-01-05 セイコーエプソン株式会社 Piezoelectric element, piezoelectric actuator, piezoelectric pump, ink jet recording head, ink jet printer, surface acoustic wave element, frequency filter, oscillator, electronic circuit, thin film piezoelectric resonator, and electronic device
CN1779926A (en) * 2005-10-13 2006-05-31 苏州科技学院 Control of lead zirconate-titanate preferred orientation
JP4492821B2 (en) 2007-03-13 2010-06-30 セイコーエプソン株式会社 Piezoelectric element
US20080224571A1 (en) * 2007-03-15 2008-09-18 Seiko Epson Corporation Piezoelectric element, liquid jet head and printer
JPWO2009157189A1 (en) 2008-06-27 2011-12-08 パナソニック株式会社 Piezoelectric element and manufacturing method thereof
JP4438892B1 (en) * 2009-02-03 2010-03-24 富士フイルム株式会社 Piezoelectric body and manufacturing method thereof, piezoelectric element, and liquid ejection device
JP5510663B2 (en) 2009-09-30 2014-06-04 セイコーエプソン株式会社 Droplet ejecting head, droplet ejecting apparatus and piezoelectric element
CN101717272B (en) * 2009-11-13 2012-11-28 西安交通大学 Preparation method of lead zirconate titanate thick film with preferable grain orientation (100)
JP5660288B2 (en) * 2010-01-05 2015-01-28 セイコーエプソン株式会社 Liquid ejecting head, liquid ejecting apparatus, piezoelectric element, and liquid ejecting head manufacturing method
JP5541452B2 (en) * 2010-03-18 2014-07-09 セイコーエプソン株式会社 Droplet ejecting head, manufacturing method thereof, and droplet ejecting apparatus
JP5828293B2 (en) 2011-05-17 2015-12-02 三菱マテリアル株式会社 Method for manufacturing PZT ferroelectric thin film
JP5613910B2 (en) 2011-05-17 2014-10-29 三菱マテリアル株式会社 Method for manufacturing PZT ferroelectric thin film
JP5621922B2 (en) * 2011-05-23 2014-11-12 コニカミノルタ株式会社 Piezoelectric element and manufacturing method thereof
JP5808262B2 (en) * 2012-01-23 2015-11-10 株式会社サイオクス Piezoelectric element and piezoelectric device
WO2013164955A1 (en) 2012-05-01 2013-11-07 コニカミノルタ株式会社 Piezoelectric element
JP6156068B2 (en) * 2013-03-14 2017-07-05 株式会社リコー Piezoelectric thin film element, ink jet recording head, and ink jet image forming apparatus
JP5943870B2 (en) * 2013-04-01 2016-07-05 富士フイルム株式会社 Piezoelectric film
JP2015079935A (en) * 2013-09-11 2015-04-23 株式会社リコー Piezoelectric actuator and droplet discharge head, and image forming apparatus
JP6478139B2 (en) * 2014-03-18 2019-03-06 株式会社リコー Method for manufacturing droplet discharge head

Also Published As

Publication number Publication date
WO2017158345A1 (en) 2017-09-21
IL261463A (en) 2018-11-29
JP2019508901A (en) 2019-03-28
MX2018011197A (en) 2019-05-16
US20190074428A1 (en) 2019-03-07
BR112018068168A2 (en) 2019-02-12
US10541360B2 (en) 2020-01-21
CN108780839A (en) 2018-11-09
JP6967008B2 (en) 2021-11-17

Similar Documents

Publication Publication Date Title
SG11201807434QA (en) A piezoelectric thin film element
SG11201900319PA (en) Compositions and methods using same for carbon doped silicon containing films
SG11201900816TA (en) A hybrid memory device
SG11201804133PA (en) Modulators of chemokine receptors
SG11201807962QA (en) Thermal insulation for three-dimensional memory arrays
SG11201909371PA (en) Composite dressings for improved granulation and reduced maceration with negative-pressure treatment
SG11201805136TA (en) Group b adenovirus encoding an anti-tcr-complex antibody or fragment
SG11201808552XA (en) T-cell modulatory multimeric polypeptides and methods of use thereof
SG11201807260RA (en) Memory device and method of forming the same
SG11201811095UA (en) Multi-level storage in ferroelectric memory
SG11201810987TA (en) A thermoplastic optical device
SG11201909927RA (en) Dosing regimen for treatment of cognitive and motor impairments with blood plasma and blood plasma products
SG11201907532VA (en) Active boundary quilt architecture memory
SG11201811269RA (en) Method of processing wafer having protrusions on the back side
SG11201804185VA (en) Features on a porous membrane
SG11201810486VA (en) High resistivity single crystal silicon ingot and wafer having improved mechanical strength
SG11201407540TA (en) Methods of growing uniform, large-scale, multilayer graphene films
SG11201803928UA (en) Processing data using dynamic partitioning
SG11201908075UA (en) A microneedle device
SG11201804235YA (en) Selective particles transfer from one device to another
SG11201906686TA (en) Ceramic material comprising a pseudo-cubic phase, a process for preparing and uses of the same
SG11201407650VA (en) Composition and process for stripping photoresist from a surface including titanium nitride
SG11201805193WA (en) Extensible barrier films, articles employing same and methods of making same
SG11201407812SA (en) Methods for reducing levels of protein-contaminant complexes and aggregates in protein preparations by treatment with electropositive organic additives
SG11201804991PA (en) Charge transfer salt, electronic device and method of forming the same