SG11201403985TA - FePt SPUTTERING TARGET AND METHOD FOR PRODUCING SAME - Google Patents

FePt SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

Info

Publication number
SG11201403985TA
SG11201403985TA SG11201403985TA SG11201403985TA SG11201403985TA SG 11201403985T A SG11201403985T A SG 11201403985TA SG 11201403985T A SG11201403985T A SG 11201403985TA SG 11201403985T A SG11201403985T A SG 11201403985TA SG 11201403985T A SG11201403985T A SG 11201403985TA
Authority
SG
Singapore
Prior art keywords
sputtering target
producing same
fept
fept sputtering
producing
Prior art date
Application number
SG11201403985TA
Other languages
English (en)
Inventor
Takanobu Miyashita
Yasuyuki Goto
Takamichi Yamamoto
Ryousuke Kushibiki
Masahiro Aono
Masahiro Nishiura
Original Assignee
Tanaka Precious Metal Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=48781589&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=SG11201403985T(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Tanaka Precious Metal Ind filed Critical Tanaka Precious Metal Ind
Publication of SG11201403985TA publication Critical patent/SG11201403985TA/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/04—Alloys based on a platinum group metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/05—Mixtures of metal powder with non-metallic powder
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/10—Alloys containing non-metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C32/00—Non-ferrous alloys containing at least 5% by weight but less than 50% by weight of oxides, carbides, borides, nitrides, silicides or other metal compounds, e.g. oxynitrides, sulfides, whether added as such or formed in situ
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0635—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2201/00—Treatment under specific atmosphere
    • B22F2201/03—Oxygen
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F9/00—Making metallic powder or suspensions thereof
    • B22F9/02—Making metallic powder or suspensions thereof using physical processes
    • B22F9/06—Making metallic powder or suspensions thereof using physical processes starting from liquid material
    • B22F9/08—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying
    • B22F9/082—Making metallic powder or suspensions thereof using physical processes starting from liquid material by casting, e.g. through sieves or in water, by atomising or spraying atomising using a fluid
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/002—Ferrous alloys, e.g. steel alloys containing In, Mg, or other elements not provided for in one single group C22C38/001 - C22C38/60
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C38/00—Ferrous alloys, e.g. steel alloys
    • C22C38/16—Ferrous alloys, e.g. steel alloys containing copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • H01J37/3491—Manufacturing of targets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Powder Metallurgy (AREA)
  • Magnetic Record Carriers (AREA)
SG11201403985TA 2012-01-13 2013-01-11 FePt SPUTTERING TARGET AND METHOD FOR PRODUCING SAME SG11201403985TA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012005695 2012-01-13
PCT/JP2013/050429 WO2013105647A1 (ja) 2012-01-13 2013-01-11 ＦｅＰｔ系スパッタリングターゲット及びその製造方法

Publications (1)

Publication Number Publication Date
SG11201403985TA true SG11201403985TA (en) 2014-10-30

Family

ID=48781589

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201403984PA SG11201403984PA (en) 2012-01-13 2013-01-11 FePt SPUTTERING TARGET AND METHOD FOR PRODUCING SAME
SG11201403985TA SG11201403985TA (en) 2012-01-13 2013-01-11 FePt SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201403984PA SG11201403984PA (en) 2012-01-13 2013-01-11 FePt SPUTTERING TARGET AND METHOD FOR PRODUCING SAME

Country Status (6)

Country Link
US (4) US9095901B2 (zh)
JP (2) JP5863783B2 (zh)
MY (2) MY173713A (zh)
SG (2) SG11201403984PA (zh)
TW (2) TWI515316B (zh)
WO (2) WO2013105648A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6366095B2 (ja) * 2014-07-29 2018-08-01 株式会社フルヤ金属 磁気記録媒体用スパッタリングターゲット
JP6305881B2 (ja) * 2014-09-05 2018-04-04 Ｊｘ金属株式会社 磁気記録媒体用スパッタリングターゲット
WO2017141558A1 (ja) 2016-02-19 2017-08-24 Ｊｘ金属株式会社 磁気記録媒体用スパッタリングターゲット及び磁性薄膜
CN108699679B (zh) * 2016-03-07 2020-09-29 田中贵金属工业株式会社 FePt-C系溅射靶
EP3564404B1 (en) * 2016-12-28 2023-03-15 Sumitomo Electric Industries, Ltd. Coating

Family Cites Families (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2985545B2 (ja) 1992-01-18 1999-12-06 日亜化学工業株式会社 合金粉末の製造方法
JP2985546B2 (ja) 1992-01-18 1999-12-06 日亜化学工業株式会社 合金粉末の製造方法
JP2948019B2 (ja) 1992-05-14 1999-09-13 アルプス電気株式会社 スパッタ用ターゲット
US5736013A (en) 1994-04-06 1998-04-07 Komag, Inc. Method for forming an improved magnetic media including sputtering of selected oxides or nitrides in the magnetic layer, and apparatus for same
US5989728A (en) 1994-11-02 1999-11-23 International Business Machines Corporation Thin film magnetic recording medium having high coercivity
JPH08157904A (ja) 1994-11-30 1996-06-18 Daido Steel Co Ltd 活性金属粉末の製造方法
JPH10338573A (ja) 1997-06-03 1998-12-22 Mitsui Mining & Smelting Co Ltd 硫化亜鉛−酸化ケイ素焼結体ターゲットの製造方法
JP3385004B2 (ja) 2000-10-11 2003-03-10 秋田県 磁気記録媒体
TW520519B (en) 2001-03-02 2003-02-11 Aichi Steel Corp Fe-Pt based magnet and manufacturing method thereof
JP4175829B2 (ja) * 2002-04-22 2008-11-05 株式会社東芝 記録媒体用スパッタリングターゲットと磁気記録媒体
US20070189916A1 (en) 2002-07-23 2007-08-16 Heraeus Incorporated Sputtering targets and methods for fabricating sputtering targets having multiple materials
KR100470151B1 (ko) 2002-10-29 2005-02-05 한국과학기술원 ＦｅＰｔＣ 박막을 이용한 고밀도 자기기록매체 및 그제조방법
TWI341337B (en) 2003-01-07 2011-05-01 Cabot Corp Powder metallurgy sputtering targets and methods of producing same
CN1926260B (zh) 2004-03-01 2010-10-06 日矿金属株式会社 表面缺陷少的溅射靶及其表面加工方法
US20060021871A1 (en) 2004-07-29 2006-02-02 Ching-Ray Chang Method for fabricating L10 phase alloy film
US20060110626A1 (en) 2004-11-24 2006-05-25 Heraeus, Inc. Carbon containing sputter target alloy compositions
JP2006161082A (ja) * 2004-12-03 2006-06-22 Ishifuku Metal Ind Co Ltd スパッタリングターゲットの製造方法
WO2007080781A1 (ja) 2006-01-13 2007-07-19 Nippon Mining & Metals Co., Ltd. 非磁性材粒子分散型強磁性材スパッタリングターゲット
JP4970003B2 (ja) 2006-11-17 2012-07-04 山陽特殊製鋼株式会社 Ｃｏ−Ｂ系ターゲット材およびその製造方法
CN100510190C (zh) * 2006-11-30 2009-07-08 复旦大学 c轴垂直取向的L10相FePt磁记录薄膜的制备方法
JP5155565B2 (ja) 2007-01-04 2013-03-06 三井金属鉱業株式会社 ＣｏＣｒＰｔ系スパッタリングターゲットおよびその製造方法
JP2008189996A (ja) 2007-02-05 2008-08-21 Hitachi Metals Ltd Ｃｏ−Ｆｅ系合金スパッタリングターゲット材およびその製造方法
US20080210555A1 (en) 2007-03-01 2008-09-04 Heraeus Inc. High density ceramic and cermet sputtering targets by microwave sintering
US20090053089A1 (en) 2007-08-20 2009-02-26 Heraeus Inc. HOMOGENEOUS GRANULATED METAL BASED and METAL-CERAMIC BASED POWDERS
JP4468461B2 (ja) 2008-02-27 2010-05-26 三井金属鉱業株式会社 セラミックス−金属複合材料からなるスパッタリングターゲット材の製造方法
US8173282B1 (en) 2009-12-11 2012-05-08 Wd Media, Inc. Perpendicular magnetic recording medium with an ordering temperature reducing layer
JP5428995B2 (ja) * 2010-03-28 2014-02-26 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
WO2012029498A1 (ja) * 2010-08-31 2012-03-08 Jx日鉱日石金属株式会社 Ｆｅ－Ｐｔ系強磁性材スパッタリングターゲット
JP5590322B2 (ja) 2010-11-12 2014-09-17 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP5290468B2 (ja) 2010-12-20 2013-09-18 Ｊｘ日鉱日石金属株式会社 Ｃ粒子が分散したＦｅ−Ｐｔ系スパッタリングターゲット
WO2012086300A1 (ja) * 2010-12-21 2012-06-28 Jx日鉱日石金属株式会社 磁気記録膜用スパッタリングターゲット及びその製造方法
JP5041261B2 (ja) 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
JP5041262B2 (ja) 2011-01-31 2012-10-03 三菱マテリアル株式会社 磁気記録媒体膜形成用スパッタリングターゲットおよびその製造方法
CN102168268A (zh) * 2011-03-02 2011-08-31 复旦大学 一种金属纳米晶的制备方法
JP5912559B2 (ja) * 2011-03-30 2016-04-27 田中貴金属工業株式会社 ＦｅＰｔ−Ｃ系スパッタリングターゲットの製造方法
MY167394A (en) 2011-12-22 2018-08-16 Jx Nippon Mining & Metals Corp C grain dispersed fe-pt-based sputtering target

Also Published As

Publication number Publication date
JPWO2013105647A1 (ja) 2015-05-11
US9358612B2 (en) 2016-06-07
TW201341552A (zh) 2013-10-16
TWI504768B (zh) 2015-10-21
US9095901B2 (en) 2015-08-04
MY174127A (en) 2020-03-10
SG11201403984PA (en) 2014-10-30
US20140322062A1 (en) 2014-10-30
JP5863782B2 (ja) 2016-02-17
JP5863783B2 (ja) 2016-02-17
WO2013105647A1 (ja) 2013-07-18
JPWO2013105648A1 (ja) 2015-05-11
US20140318954A1 (en) 2014-10-30
US20140322063A1 (en) 2014-10-30
WO2013105648A1 (ja) 2013-07-18
MY173713A (en) 2020-02-18
TWI515316B (zh) 2016-01-01
US9314845B2 (en) 2016-04-19
TW201341553A (zh) 2013-10-16
US20140318955A1 (en) 2014-10-30
US9314846B2 (en) 2016-04-19

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