SG11201403972VA - A nanowire device having graphene top and bottom electrodes and method of making such a device - Google Patents

A nanowire device having graphene top and bottom electrodes and method of making such a device

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Publication number
SG11201403972VA
SG11201403972VA SG11201403972VA SG11201403972VA SG11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA SG 11201403972V A SG11201403972V A SG 11201403972VA
Authority
SG
Singapore
Prior art keywords
making
bottom electrodes
nanowire
graphene top
graphene
Prior art date
Application number
SG11201403972VA
Other languages
English (en)
Inventor
Helge Weman
Bjørn-Ove Fimland
Dong Chul Kim
Original Assignee
Norwegian Univ Sci & Tech Ntnu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Norwegian Univ Sci & Tech Ntnu filed Critical Norwegian Univ Sci & Tech Ntnu
Publication of SG11201403972VA publication Critical patent/SG11201403972VA/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
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SG11201403972VA 2012-01-10 2013-01-10 A nanowire device having graphene top and bottom electrodes and method of making such a device SG11201403972VA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB1200355.4A GB201200355D0 (en) 2012-01-10 2012-01-10 Nanowires
PCT/EP2013/050419 WO2013104723A1 (en) 2012-01-10 2013-01-10 A nanowire device having graphene top and bottom electrodes and method of making such a device

Publications (1)

Publication Number Publication Date
SG11201403972VA true SG11201403972VA (en) 2014-08-28

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SG11201403972VA SG11201403972VA (en) 2012-01-10 2013-01-10 A nanowire device having graphene top and bottom electrodes and method of making such a device

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