SG11201403319RA - Silver-alloy sputtering target for conductive-film formation, and method for producing same - Google Patents

Silver-alloy sputtering target for conductive-film formation, and method for producing same

Info

Publication number
SG11201403319RA
SG11201403319RA SG11201403319RA SG11201403319RA SG11201403319RA SG 11201403319R A SG11201403319R A SG 11201403319RA SG 11201403319R A SG11201403319R A SG 11201403319RA SG 11201403319R A SG11201403319R A SG 11201403319RA SG 11201403319R A SG11201403319R A SG 11201403319RA
Authority
SG
Singapore
Prior art keywords
silver
conductive
film formation
sputtering target
producing same
Prior art date
Application number
SG11201403319RA
Other languages
English (en)
Inventor
Shozo Komiyama
Shinichi Funaki
Shinya Koike
Sei OKUDA
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of SG11201403319RA publication Critical patent/SG11201403319RA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02266Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • C23C14/3407Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • CCHEMISTRY; METALLURGY
    • C22METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22CALLOYS
    • C22C5/00Alloys based on noble metals
    • C22C5/06Alloys based on silver
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7515Means for applying permanent coating, e.g. in-situ coating
    • H01L2224/7518Means for blanket deposition
    • H01L2224/75186Means for sputtering, e.g. target
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00Organic light-emitting devices
    • H10K50/80Constructional details
    • H10K50/805Electrodes
    • H10K50/81Anodes
    • H10K50/818Reflective anodes, e.g. ITO combined with thick metallic layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Optics & Photonics (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal Rolling (AREA)
SG11201403319RA 2012-01-10 2012-05-09 Silver-alloy sputtering target for conductive-film formation, and method for producing same SG11201403319RA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012002072A JP5159962B1 (ja) 2012-01-10 2012-01-10 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
PCT/JP2012/061865 WO2013105284A1 (ja) 2012-01-10 2012-05-09 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法

Publications (1)

Publication Number Publication Date
SG11201403319RA true SG11201403319RA (en) 2014-09-26

Family

ID=48013557

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201403319RA SG11201403319RA (en) 2012-01-10 2012-05-09 Silver-alloy sputtering target for conductive-film formation, and method for producing same

Country Status (7)

Country Link
EP (1) EP2803754B1 (ja)
JP (1) JP5159962B1 (ja)
KR (1) KR101342331B1 (ja)
CN (1) CN103298970B (ja)
SG (1) SG11201403319RA (ja)
TW (1) TWI429762B (ja)
WO (1) WO2013105284A1 (ja)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5720816B2 (ja) * 2011-06-24 2015-05-20 三菱マテリアル株式会社 導電性膜
DE102012006718B3 (de) 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP5522599B1 (ja) * 2012-12-21 2014-06-18 三菱マテリアル株式会社 Ag合金スパッタリングターゲット
JP5590258B2 (ja) * 2013-01-23 2014-09-17 三菱マテリアル株式会社 Ag合金膜形成用スパッタリングターゲットおよびAg合金膜、Ag合金反射膜、Ag合金導電膜、Ag合金半透過膜
JP6198177B2 (ja) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ag合金スパッタリングターゲット
JP2015079739A (ja) * 2013-09-13 2015-04-23 三菱マテリアル株式会社 有機el用反射電極膜、積層反射電極膜、及び、反射電極膜形成用スパッタリングターゲット
CN105316630B (zh) * 2014-06-04 2020-06-19 光洋应用材料科技股份有限公司 银合金靶材、其制造方法及应用该靶材的有机发光二极管
JP6375829B2 (ja) * 2014-09-25 2018-08-22 三菱マテリアル株式会社 Ag合金スパッタリングターゲット
JP6398594B2 (ja) * 2014-10-20 2018-10-03 三菱マテリアル株式会社 スパッタリングターゲット
JP6350223B2 (ja) * 2014-11-04 2018-07-04 三菱マテリアル株式会社 Ag合金スパッタリングターゲット
CN106893989B (zh) * 2016-12-29 2019-10-01 昆山全亚冠环保科技有限公司 一种银钛合金靶材防开裂轧制工艺
US11939653B2 (en) * 2018-11-30 2024-03-26 Tanaka Kikinzoku Kogyo K.K. Electrically-conductive material having excellent wear resistance and heat resistance
WO2022038795A1 (ja) * 2020-08-17 2022-02-24 松田産業株式会社 貴金属スパッタリングターゲット
CN113088749A (zh) * 2021-03-11 2021-07-09 先导薄膜材料(广东)有限公司 一种银合金及其制备方法
CN113913761B (zh) * 2021-10-11 2022-08-12 芜湖映日科技股份有限公司 一种Ag基合金靶材及其制备方法
CN114395749B (zh) * 2021-11-13 2023-06-02 丰联科光电(洛阳)股份有限公司 一种大尺寸、多元Ag基合金溅射靶材的制备方法
CN114574822B (zh) * 2022-03-02 2024-01-30 基迈克材料科技(苏州)有限公司 一种银合金靶材制备工艺及应用

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US20030052000A1 (en) * 1997-07-11 2003-03-20 Vladimir Segal Fine grain size material, sputtering target, methods of forming, and micro-arc reduction method
US6569270B2 (en) 1997-07-11 2003-05-27 Honeywell International Inc. Process for producing a metal article
WO2002077317A1 (fr) 2001-03-16 2002-10-03 Ishifuku Metal Industry Co., Ltd. Materiau de cible de pulverisation
JP2004002929A (ja) * 2001-08-03 2004-01-08 Furuya Kinzoku:Kk 銀合金、スパッタリングターゲット、反射型lcd用反射板、反射配線電極、薄膜、その製造方法、光学記録媒体、電磁波遮蔽体、電子部品用金属材料、配線材料、電子部品、電子機器、金属膜の加工方法、電子光学部品、積層体及び建材ガラス
JP3982793B2 (ja) 2001-09-14 2007-09-26 日立金属株式会社 表示装置用Ag合金反射膜
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JP4793502B2 (ja) * 2009-10-06 2011-10-12 三菱マテリアル株式会社 有機el素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
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JP5533545B2 (ja) 2010-01-12 2014-06-25 三菱マテリアル株式会社 有機el素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5472353B2 (ja) * 2012-03-27 2014-04-16 三菱マテリアル株式会社 銀系円筒ターゲット及びその製造方法

Also Published As

Publication number Publication date
EP2803754A4 (en) 2015-11-11
JP5159962B1 (ja) 2013-03-13
WO2013105284A1 (ja) 2013-07-18
KR101342331B1 (ko) 2013-12-16
EP2803754B1 (en) 2017-03-08
EP2803754A1 (en) 2014-11-19
JP2013142163A (ja) 2013-07-22
CN103298970B (zh) 2015-04-15
CN103298970A (zh) 2013-09-11
KR20130091337A (ko) 2013-08-16
TWI429762B (zh) 2014-03-11
TW201329257A (zh) 2013-07-16

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