SG110201A1 - Adaptive lithographic critical dimension enhancement - Google Patents

Adaptive lithographic critical dimension enhancement

Info

Publication number
SG110201A1
SG110201A1 SG200405956A SG200405956A SG110201A1 SG 110201 A1 SG110201 A1 SG 110201A1 SG 200405956 A SG200405956 A SG 200405956A SG 200405956 A SG200405956 A SG 200405956A SG 110201 A1 SG110201 A1 SG 110201A1
Authority
SG
Singapore
Prior art keywords
adaptive
critical dimension
lithographic critical
dimension enhancement
enhancement
Prior art date
Application number
SG200405956A
Other languages
English (en)
Inventor
Todd David Hiar
Wim Tjibbo Tel
Todd J Davis
Theodore Allen Paxton
Original Assignee
Asml Netherlands Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asml Netherlands Bv filed Critical Asml Netherlands Bv
Publication of SG110201A1 publication Critical patent/SG110201A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG200405956A 2003-09-17 2004-09-13 Adaptive lithographic critical dimension enhancement SG110201A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/663,904 US6873938B1 (en) 2003-09-17 2003-09-17 Adaptive lithographic critical dimension enhancement

Publications (1)

Publication Number Publication Date
SG110201A1 true SG110201A1 (en) 2005-04-28

Family

ID=34194736

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200405956A SG110201A1 (en) 2003-09-17 2004-09-13 Adaptive lithographic critical dimension enhancement

Country Status (7)

Country Link
US (1) US6873938B1 (zh)
EP (1) EP1517189A3 (zh)
JP (1) JP4262175B2 (zh)
KR (1) KR100639801B1 (zh)
CN (1) CN100468201C (zh)
SG (1) SG110201A1 (zh)
TW (1) TWI245976B (zh)

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JP4926433B2 (ja) * 2004-12-06 2012-05-09 株式会社Ｓｏｋｕｄｏ 基板処理装置および基板処理方法
US7738075B2 (en) * 2005-05-23 2010-06-15 Asml Netherlands B.V. Lithographic attribute enhancement
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JP4761907B2 (ja) * 2005-09-28 2011-08-31 株式会社Ｓｏｋｕｄｏ 基板処理装置
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JP4898419B2 (ja) * 2006-01-05 2012-03-14 キヤノン株式会社 露光量のおよびフォーカス位置のオフセット量を求める方法、プログラムおよびデバイス製造方法
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US7571021B2 (en) * 2007-02-13 2009-08-04 Taiwan Semiconductor Manufacturing Company Method and system for improving critical dimension uniformity
US7829249B2 (en) * 2007-03-05 2010-11-09 Asml Netherlands B.V. Device manufacturing method, computer program and lithographic apparatus
US7957826B2 (en) * 2007-08-21 2011-06-07 International Business Machines Corporation Methods for normalizing error in photolithographic processes
US7871745B2 (en) * 2007-12-27 2011-01-18 United Microelectronics Corp. Exposure method
TWI380349B (en) * 2008-07-09 2012-12-21 Nanya Technology Corp Exposure method
US9323140B2 (en) 2008-09-01 2016-04-26 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US9341936B2 (en) 2008-09-01 2016-05-17 D2S, Inc. Method and system for forming a pattern on a reticle using charged particle beam lithography
US20120219886A1 (en) 2011-02-28 2012-08-30 D2S, Inc. Method and system for forming patterns using charged particle beam lithography with variable pattern dosage
US8473875B2 (en) 2010-10-13 2013-06-25 D2S, Inc. Method and system for forming high accuracy patterns using charged particle beam lithography
NL2003364A (en) * 2008-09-26 2010-03-29 Asml Netherlands Bv Lithographic apparatus and method.
NL2004770A (nl) * 2009-05-29 2010-11-30 Asml Holding Nv Lithographic apparatus and method for illumination uniformity correction and uniformity drift compensation.
JP2011081317A (ja) * 2009-10-09 2011-04-21 San Ei Giken Inc 露光装置および露光方法
US8219938B2 (en) * 2009-10-16 2012-07-10 Samsung Electronics Co., Ltd. Semiconductor inter-field dose correction
JP5165731B2 (ja) * 2010-06-30 2013-03-21 東京エレクトロン株式会社 局所露光装置及び局所露光方法
US8703389B2 (en) 2011-06-25 2014-04-22 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US9612530B2 (en) 2011-02-28 2017-04-04 D2S, Inc. Method and system for design of enhanced edge slope patterns for charged particle beam lithography
US9034542B2 (en) 2011-06-25 2015-05-19 D2S, Inc. Method and system for forming patterns with charged particle beam lithography
US8719739B2 (en) 2011-09-19 2014-05-06 D2S, Inc. Method and system for forming patterns using charged particle beam lithography
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JP5642101B2 (ja) 2012-03-22 2014-12-17 株式会社東芝 ドーズ量の補正マップの作成方法、露光方法及び半導体装置の製造方法
JP6189933B2 (ja) * 2012-04-18 2017-08-30 ディー・ツー・エス・インコーポレイテッドＤ２Ｓ， Ｉｎｃ． 荷電粒子ビームリソグラフィを用いる限界寸法均一性のための方法およびシステム
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CN106154754A (zh) * 2015-04-02 2016-11-23 上海和辉光电有限公司 套刻精度的控制方法以及装置
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US10503850B2 (en) * 2016-11-22 2019-12-10 Tokyo Electron Limited Generation of a map of a substrate using iterative calculations of non-measured attribute data
CN108121163B (zh) * 2016-11-29 2019-10-25 上海微电子装备（集团）股份有限公司 一种光源曝光剂量控制系统及控制方法
KR102570888B1 (ko) 2017-11-23 2023-08-28 삼성전자주식회사 마스크 레이아웃의 보정 방법 및 이를 이용한 반도체 소자의 제조방법
US11764111B2 (en) * 2019-10-24 2023-09-19 Texas Instruments Incorporated Reducing cross-wafer variability for minimum width resistors
EP4155822A1 (en) * 2021-09-28 2023-03-29 ASML Netherlands B.V. Metrology method and system and lithographic system

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Also Published As

Publication number Publication date
US6873938B1 (en) 2005-03-29
CN100468201C (zh) 2009-03-11
KR100639801B1 (ko) 2006-10-30
TW200513807A (en) 2005-04-16
EP1517189A3 (en) 2006-02-15
EP1517189A2 (en) 2005-03-23
JP2005094015A (ja) 2005-04-07
KR20050028800A (ko) 2005-03-23
US20050075819A1 (en) 2005-04-07
JP4262175B2 (ja) 2009-05-13
TWI245976B (en) 2005-12-21
CN1629729A (zh) 2005-06-22

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