SG10201912445QA - Photomask Blank and Method for Preparing Photomask - Google Patents

Photomask Blank and Method for Preparing Photomask

Info

Publication number
SG10201912445QA
SG10201912445QA SG10201912445QA SG10201912445QA SG10201912445QA SG 10201912445Q A SG10201912445Q A SG 10201912445QA SG 10201912445Q A SG10201912445Q A SG 10201912445QA SG 10201912445Q A SG10201912445Q A SG 10201912445QA SG 10201912445Q A SG10201912445Q A SG 10201912445QA
Authority
SG
Singapore
Prior art keywords
photomask
preparing
blank
photomask blank
preparing photomask
Prior art date
Application number
SG10201912445QA
Other languages
English (en)
Inventor
Takuro Kosaka
Yukio Inazuki
Hideo Kaneko
Original Assignee
Shinetsu Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinetsu Chemical Co filed Critical Shinetsu Chemical Co
Publication of SG10201912445QA publication Critical patent/SG10201912445QA/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/66—Containers specially adapted for masks, mask blanks or pellicles; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/46—Antireflective coatings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/80—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Physical Vapour Deposition (AREA)
  • Silver Salt Photography Or Processing Solution Therefor (AREA)
SG10201912445QA 2016-03-02 2017-02-24 Photomask Blank and Method for Preparing Photomask SG10201912445QA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016040199 2016-03-02
JP2016246173A JP6743679B2 (ja) 2016-03-02 2016-12-20 フォトマスクブランク、及びフォトマスクの製造方法

Publications (1)

Publication Number Publication Date
SG10201912445QA true SG10201912445QA (en) 2020-02-27

Family

ID=59854097

Family Applications (2)

Application Number Title Priority Date Filing Date
SG10201701484PA SG10201701484PA (en) 2016-03-02 2017-02-24 Photomask Blank and Method for Preparing Photomask
SG10201912445QA SG10201912445QA (en) 2016-03-02 2017-02-24 Photomask Blank and Method for Preparing Photomask

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG10201701484PA SG10201701484PA (en) 2016-03-02 2017-02-24 Photomask Blank and Method for Preparing Photomask

Country Status (5)

Country Link
US (1) US11327393B2 (ko)
JP (3) JP6743679B2 (ko)
KR (1) KR102374972B1 (ko)
SG (2) SG10201701484PA (ko)
TW (2) TWI811189B (ko)

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JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
KR102366782B1 (ko) * 2016-07-25 2022-02-23 호야 가부시키가이샤 마스크 블랭크, 전사용 마스크, 전사용 마스크의 제조 방법 및 반도체 디바이스의 제조 방법
JP6932552B2 (ja) * 2017-05-31 2021-09-08 Hoya株式会社 マスクブランク、転写用マスクの製造方法及び半導体デバイスの製造方法
TWI676076B (zh) * 2018-04-27 2019-11-01 台灣美日先進光罩股份有限公司 光罩、光罩的製造方法及半導體光罩基板
KR20200007623A (ko) * 2018-07-13 2020-01-22 주식회사 에스앤에스텍 블랭크 마스크, 포토마스크 및 이의 제조 방법
JP2020013100A (ja) 2018-07-13 2020-01-23 エスアンドエス テック カンパニー リミテッド ブランクマスク、フォトマスク及びその製造方法
CN117916660A (zh) 2021-09-08 2024-04-19 豪雅株式会社 掩模坯料、相移掩模及半导体器件的制造方法

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JP2016035559A (ja) 2014-08-04 2016-03-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
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JP6287932B2 (ja) 2015-03-31 2018-03-07 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランクの製造方法
JP6500791B2 (ja) 2016-01-22 2019-04-17 信越化学工業株式会社 ハーフトーン位相シフト型フォトマスクブランク及びその製造方法
US10678125B2 (en) * 2016-03-02 2020-06-09 Shin-Etsu Chemical Co., Ltd. Photomask blank and method for preparing photomask
JP6743679B2 (ja) * 2016-03-02 2020-08-19 信越化学工業株式会社 フォトマスクブランク、及びフォトマスクの製造方法
JP6558326B2 (ja) 2016-08-23 2019-08-14 信越化学工業株式会社 ハーフトーン位相シフトマスクブランクの製造方法、ハーフトーン位相シフトマスクブランク、ハーフトーン位相シフトマスク及びフォトマスクブランク用薄膜形成装置
WO2018037863A1 (ja) * 2016-08-26 2018-03-01 Hoya株式会社 マスクブランク、転写用マスク及び半導体デバイスの製造方法

Also Published As

Publication number Publication date
US11327393B2 (en) 2022-05-10
JP2020170202A (ja) 2020-10-15
JP2017161889A (ja) 2017-09-14
JP6897851B2 (ja) 2021-07-07
KR102374972B1 (ko) 2022-03-16
JP2020190738A (ja) 2020-11-26
TW202348821A (zh) 2023-12-16
TW201802269A (zh) 2018-01-16
KR20170102811A (ko) 2017-09-12
TWI832788B (zh) 2024-02-11
TWI811189B (zh) 2023-08-11
US20200264502A1 (en) 2020-08-20
SG10201701484PA (en) 2017-10-30
JP6743679B2 (ja) 2020-08-19

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