SG11202001427YA - Method for Manufacturing of Pellicle - Google Patents
Method for Manufacturing of PellicleInfo
- Publication number
- SG11202001427YA SG11202001427YA SG11202001427YA SG11202001427YA SG11202001427YA SG 11202001427Y A SG11202001427Y A SG 11202001427YA SG 11202001427Y A SG11202001427Y A SG 11202001427YA SG 11202001427Y A SG11202001427Y A SG 11202001427YA SG 11202001427Y A SG11202001427Y A SG 11202001427YA
- Authority
- SG
- Singapore
- Prior art keywords
- pellicle
- manufacturing
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
- G03F1/64—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof characterised by the frames, e.g. structure or material, including bonding means therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02167—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon carbide not containing oxygen, e.g. SiC, SiC:H or silicon carbonitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Metallurgy (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016167257A JP6944768B2 (en) | 2016-08-29 | 2016-08-29 | How to make a pellicle |
PCT/JP2017/030578 WO2018043347A1 (en) | 2016-08-29 | 2017-08-25 | Pellicle production method |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11202001427YA true SG11202001427YA (en) | 2020-03-30 |
Family
ID=61305208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11202001427YA SG11202001427YA (en) | 2016-08-29 | 2017-08-25 | Method for Manufacturing of Pellicle |
Country Status (8)
Country | Link |
---|---|
US (1) | US11119402B2 (en) |
EP (1) | EP3506010B1 (en) |
JP (1) | JP6944768B2 (en) |
KR (1) | KR102423321B1 (en) |
CN (1) | CN109643059B (en) |
SG (1) | SG11202001427YA (en) |
TW (1) | TWI744377B (en) |
WO (1) | WO2018043347A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20180118681A (en) * | 2016-02-19 | 2018-10-31 | 에어 워터 가부시키가이샤 | Compound semiconductor substrate, pellicle film, and method for manufacturing compound semiconductor substrate |
CN108699687B (en) * | 2016-02-19 | 2022-03-01 | 爱沃特株式会社 | Compound semiconductor substrate, pellicle, and method for producing compound semiconductor substrate |
JP6787851B2 (en) * | 2017-08-08 | 2020-11-18 | エア・ウォーター株式会社 | Pellicle and method of manufacturing pellicle |
WO2023101330A1 (en) * | 2021-12-01 | 2023-06-08 | 주식회사 인포비온 | Pellicle for extreme ultraviolet lithography and method for manufacturing same |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09310170A (en) * | 1996-05-21 | 1997-12-02 | Hoya Corp | Silicon carbide thin coating structural body and its production |
US5793836A (en) | 1996-09-06 | 1998-08-11 | International Business Machines Corporation | X-ray mask pellicle |
JP4904656B2 (en) * | 2001-09-27 | 2012-03-28 | パナソニック株式会社 | Thin film piezoelectric element and method for manufacturing the same |
US6931700B2 (en) * | 2001-10-02 | 2005-08-23 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing thin film piezoelectric elements |
US20050025959A1 (en) * | 2003-07-31 | 2005-02-03 | Bellman Robert A. | Hard pellicle and fabrication thereof |
CA2672758C (en) | 2006-12-18 | 2019-07-30 | Acceleron Pharma Inc. | Activin-actrii antagonists and uses for increasing red blood cell levels |
JP4861963B2 (en) | 2007-10-18 | 2012-01-25 | 信越化学工業株式会社 | Pellicle and method for manufacturing pellicle |
EP2051139B1 (en) | 2007-10-18 | 2010-11-24 | Shin-Etsu Chemical Co., Ltd. | Pellicle and method for manufacturing the same |
JP4928494B2 (en) * | 2008-05-02 | 2012-05-09 | 信越化学工業株式会社 | Pellicle and method for manufacturing pellicle |
KR20100008123A (en) * | 2008-07-15 | 2010-01-25 | 고려대학교 산학협력단 | Vertical light emitting devices with the support composed of double heat-sinking layer |
JP5807949B2 (en) * | 2010-11-12 | 2015-11-10 | 国立大学法人東北大学 | Ultra high speed wet etching system |
JP2012151158A (en) * | 2011-01-17 | 2012-08-09 | Shin Etsu Chem Co Ltd | Pellicle film for euv and pellicle, and method of producing pellicle film |
WO2014188710A1 (en) * | 2013-05-24 | 2014-11-27 | 三井化学株式会社 | Pellicle and euv exposure device comprising same |
JP2015166927A (en) | 2014-03-03 | 2015-09-24 | 株式会社リコー | Program, information processing apparatus, and system |
US10216081B2 (en) | 2014-05-02 | 2019-02-26 | Mitsui Chemicals, Inc. | Pellicle frame, pellicle and method of manufacturing the same, original plate for exposure and method of manufacturing the same, exposure device, and method of manufacturing semiconductor device |
KR102254103B1 (en) * | 2015-01-07 | 2021-05-20 | 삼성전자주식회사 | Method of fabricating pellicles using supporting layer |
JP2016130789A (en) | 2015-01-14 | 2016-07-21 | 凸版印刷株式会社 | Pellicle for EUV mask |
GB2534404A (en) | 2015-01-23 | 2016-07-27 | Cnm Tech Gmbh | Pellicle |
JP6408396B2 (en) | 2015-02-17 | 2018-10-17 | 三井化学株式会社 | Pellicle film manufacturing method, pellicle manufacturing method, and photomask manufacturing method |
US9835940B2 (en) * | 2015-09-18 | 2017-12-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method to fabricate mask-pellicle system |
JP6753703B2 (en) * | 2016-02-19 | 2020-09-09 | エア・ウォーター株式会社 | Method for manufacturing compound semiconductor substrate, pellicle film, and compound semiconductor substrate |
-
2016
- 2016-08-29 JP JP2016167257A patent/JP6944768B2/en active Active
-
2017
- 2017-08-25 EP EP17846352.7A patent/EP3506010B1/en active Active
- 2017-08-25 WO PCT/JP2017/030578 patent/WO2018043347A1/en active Application Filing
- 2017-08-25 US US16/329,020 patent/US11119402B2/en active Active
- 2017-08-25 CN CN201780053409.1A patent/CN109643059B/en active Active
- 2017-08-25 SG SG11202001427YA patent/SG11202001427YA/en unknown
- 2017-08-25 KR KR1020197009034A patent/KR102423321B1/en active IP Right Grant
- 2017-08-28 TW TW106129132A patent/TWI744377B/en active
Also Published As
Publication number | Publication date |
---|---|
KR102423321B1 (en) | 2022-07-22 |
TW201813049A (en) | 2018-04-01 |
EP3506010A4 (en) | 2019-09-11 |
EP3506010A1 (en) | 2019-07-03 |
KR20190045261A (en) | 2019-05-02 |
WO2018043347A1 (en) | 2018-03-08 |
JP2018035014A (en) | 2018-03-08 |
US11119402B2 (en) | 2021-09-14 |
US20190204731A1 (en) | 2019-07-04 |
JP6944768B2 (en) | 2021-10-06 |
CN109643059B (en) | 2023-08-04 |
EP3506010B1 (en) | 2023-06-07 |
TWI744377B (en) | 2021-11-01 |
CN109643059A (en) | 2019-04-16 |
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