JPH09310170A - Silicon carbide thin coating structural body and its production - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for producing a silicon carbide thin coating structural body having high surface flatness and high mechanical strength and having a structure in which silicon carbide thin coating whose surface is clean is formed on an insulator. SOLUTION: Silicon carbide thin coating 22 is deposited on a flat substrate 21, a part of the substrate is removed and an opening part 23 is provided to expose the boundary of the silicon carbide thin coating faced to the substrate, then, an oxidized coating layer 24 covering the same is applied, and furthermore, the part of the oxidized coating layer on the silicon carbide thin coating on the side of the opening part is removed to expose the silicon carbide thin coating, by which a silicon carbide thin coating structural body 20 having the flat and clean silicon carbide thin coating face is formed. Moreover, the part of the silicon carbide thin coating with the oxidized coating layer on the opening part of the substrate is separated, by which an independent silicon carbide thin coating structural body can also be obtd.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a silicon carbide thin film structure suitably used as various device materials, sensor materials, optical thin film materials, and various microfabrication materials represented by micromachining. TECHNICAL FIELD The present invention relates to a silicon carbide thin film structure intended to be provided as a material having not only a silicon carbide thin film surface but also high functionality, and a method for producing the same.

[0002]

2. Description of the Related Art Silicon carbide (SiC) has been known for a long time as a substance that is thermally and chemically stable and has excellent mechanical strength, and is used for structural materials and environmental resistance materials. It is applied. Further, since silicon carbide is a semiconductor material having a wider forbidden band width than silicon or the like, it can be used not only as a high output power element but also as various semiconductor device materials, sensor materials, and thin film materials for microfabrication for constituting these. Attention has been paid. As a method for producing a silicon carbide thin film, deposition on a substrate is generally used. Examples of the deposition method used at this time include a chemical vapor deposition method (CVD method) using heat, light, and plasma, a molecular beam epitaxy method, and a sputtering method. These deposition methods are
A silicon carbide thin film can be deposited at a relatively low temperature of several hundreds of degrees Celsius to 1350 degrees Celsius, a large-area silicon carbide thin film can be obtained by using a large base substrate, and an amorphous structure and a polycrystalline structure. It is effective in that a silicon carbide thin film having an arbitrary structure such as a single crystal structure can be obtained. For example, in Japanese Patent Laid-Open No. 7-118854,
A method is disclosed in which a silicon substrate is used as a base substrate and a crystalline silicon carbide thin film is formed on this substrate with high mass productivity. Although there is a sublimation method as a method for producing silicon carbide capable of ingot growth, its application is such that it requires a high temperature near 2000 ° C., it is difficult to increase the ingot diameter, and processing by cutting is required. It is difficult to put it into practical use due to its limited range and mass productivity.

[0003]

The silicon carbide deposited film has different aspects such as film quality, crystallinity, and surface roughness depending on its manufacturing method. For example, in the case of a silicon carbide thin film manufactured by using a sputtering method, the silicon carbide thin film formed is amorphous or polycrystalline, depending on the target composition, gas, pressure, deposition temperature, and the manufacturing conditions such as the underlying substrate. The surface has a center line surface roughness of several tens to several hundreds nm Ra. On the other hand, when a silicon carbide thin film is heteroepitaxially grown on an appropriate substrate using the CVD method, a single crystal or polycrystalline silicon carbide thin film can be obtained. However, due to the characteristics of heteroepitaxial growth, problems such as the crystallinity of the silicon carbide layer being impaired and the surface morphology being deteriorated due to the lattice mismatch occurring at the interface between the underlying substrate material and silicon carbide. This problem becomes an obstacle when a silicon carbide layer having good crystallinity or a smooth silicon carbide thin film surface is required. As a countermeasure, a silicon substrate is used as a substrate, and the surface of the silicon substrate is carbonized in advance (surface carbonization) to form a silicon carbide thin film on it (Ono et al., IEICE Technical Report, SSD80, (1980). 1
25) has been proposed, but the effect of this surface carbonization method is not necessarily sufficient (H. Nagasawa et.a1., J. Cry.
s. Crow., 115, (1991), 612), and the surface roughness of the silicon carbide thin film actually obtained is 3 in terms of the center line average roughness.
nmRa and the surface roughness (S
i (100) surface polished wafer, 1 nmRa or less). There is also a method of selecting silicon carbide produced by the above-mentioned sublimation method or titanium carbide as a substrate material that does not have a lattice mismatch with the silicon carbide crystal, but in either case, the substrate itself is expensive or only a small diameter product can be obtained. There is a problem that it is not possible, and it is not superior as a mass production technology.

From the viewpoint of mass production technology, there is a method of polishing the surface after forming a silicon carbide thin film to improve the surface roughness. For example, even if mechanochemical polishing which is said to be effective for polishing silicon carbide is used, The problems such as adhesion of foreign matters and impurities in the polishing step, deterioration of the surface state due to poor polishing, and the fact that a thin film cannot be used to obtain a sufficient polishing margin are unsolved. Further, the silicon carbide thin film as a thin film material is very easy to be damaged in the state of the thin film alone due to its characteristics, and its handling is difficult. For example, Japanese Unexamined Patent Publication No. 6-112107 discloses a self-supporting silicon carbide thin film as an X-ray mask membrane, but a silicon support for holding the membrane is required for easy handling. Further, in consideration of application of the silicon carbide thin film from the viewpoint of electronic material, in order to utilize the electrical characteristics of silicon carbide itself, except when forming an element structure (for example, a pn junction) with a base substrate and silicon carbide. For this reason, electrical insulation from the underlying substrate is essential. By the way, a structure in which a single crystal silicon carbide thin film, which is expected as a next-generation semiconductor material, is directly heteroepitaxially grown on an insulating substrate, for example, a sapphire substrate, has not yet reached the stage of development.

However, while many problems remain as described above, it is now easy to form a silicon carbide thin film having a large area and a relatively good quality, and the needs from the application side thereof are rapidly increasing. There is an urgent need to supply silicon thin films. For that purpose, the surface flatness or surface roughness level comparable to that of a silicon substrate is realized, the mechanical handling of the thin film is improved,
It is necessary to solve the problems of imparting electrical insulation and improving crystallinity. The object of the present invention is to easily realize a structure in which a silicon carbide thin film is formed on an insulator while having a high degree of surface flatness, or a structure to which an insulator is added, with respect to the above-mentioned silicon carbide thin film. At the same time, an object of the present invention is to provide a method for producing a silicon carbide thin film structure capable of improving the mechanical strength of the film and achieving surface cleaning treatment, and to provide a high-quality silicon carbide thin film structure.

[0006]

In order to solve the above-mentioned problems, a method of manufacturing a silicon carbide thin film structure according to the present invention comprises depositing a silicon carbide thin film on a substrate and removing a part of the substrate. An opening is provided to expose an interface of the silicon carbide thin film facing the substrate, an oxide film layer is provided to cover at least a part of the exposed silicon carbide thin film, and the silicon carbide on the substrate opening side of the oxide film layer is further provided. A silicon carbide thin film structure is characterized by removing the oxide film layer portion formed on the thin film to expose the silicon carbide thin film. Furthermore, the silicon carbide thin film structure is obtained by separating the portion of the silicon carbide thin film with the oxide film layer in the opening of the substrate from the substrate.
For separation from the substrate, a method of cutting out the exposed portion of the silicon carbide film, a method of peeling the substrate from the silicon carbide film, or the like can be used.

A method of oxidizing the above-mentioned oxide film layer on the silicon carbide thin film in an atmosphere containing oxygen,
Alternatively, it may be performed by either a method of performing wet oxidation in a solution having an oxidizing action, or a method of performing a heat treatment after forming a film made of a material containing oxygen on the silicon carbide film. More specifically, dry or wet or hydrogen combustion thermal oxidation, solution oxidation for forming an oxide film in a solution having an oxidizing action such as a mixed solution of hydrogen peroxide and sulfuric acid, or sputtering or CVD After depositing a thin film of a material containing oxygen such as silicon oxide, 2
A method such as heat treatment at 00 ° C. to 900 ° C. can be appropriately used. Further, the substrate on which the silicon carbide thin film is deposited may be a silicon substrate, and the silicon carbide thin film may be a cubic silicon carbide thin film. Further, it is preferable to produce the silicon carbide thin film by a chemical vapor deposition method.

Further, in order to solve the above problems, a silicon carbide thin film structure according to the present invention is a silicon carbide thin film structure in which an oxide film layer is laminated on the back surface of the silicon carbide thin film. Is a portion exposed by removing the substrate on which the silicon carbide thin film is deposited.
Further, it is characterized by being manufactured by the method for manufacturing a silicon carbide thin film structure described above.

According to the method of manufacturing a silicon carbide thin film structure of the present invention, after depositing a silicon carbide thin film on a substrate,
Since a part of the substrate is removed to expose the interface of the silicon carbide thin film facing the substrate, a structure in which the thin film made of silicon carbide is free-standing from the substrate is obtained. Moreover, the silicon carbide thin film exposed in the opening of the substrate reflects the surface shape of the substrate and has a surface roughness equivalent to that of the substrate surface. Therefore, by using a substrate having a small surface roughness, it can be formed extremely flat. To be done. For example, in the case of a substrate material such as a silicon substrate or a fused silica substrate, the surface roughness is set to 1 n by applying ultra-flat polishing.
Although a value of mRa or less has been achieved, by applying such a flat substrate to the present invention, a silicon carbide thin film having good surface properties comparable to the above-mentioned surface roughness can be easily obtained. By providing an oxide film layer on such a silicon carbide thin film, it is possible to obtain a self-supporting silicon carbide thin film structure with an insulating film surrounding the substrate material.

Although various general methods can be used to remove a part of the substrate, silicon carbide itself is a material having a very high resistance to acid and alkali. Therefore, the wet etching method of dissolving the substrate with acid or alkali is particularly effective. For example, in the above-mentioned Japanese Patent Laid-Open No. 6-112107, a method of removing a silicon substrate used as a base substrate by using a mixed solution of hydrofluoric acid and nitric acid or a sodium hydroxide solution in order to manufacture a self-supporting silicon carbide thin film. Is disclosed. The acid or alkali may be appropriately selected depending on the material of the base substrate. There is also a method of providing an opening in the base substrate by reactive ion etching or mechanical cutting. However, since reactive ion etching has a slower etching rate than wet etching, it takes too much time to remove the entire substrate, and the surface of silicon carbide is damaged by plasma. Further, the method of mechanically cutting and removing the base substrate has a problem that mechanical damage may occur on the cutting surface or the silicon carbide surface. However, it is sufficiently possible to alleviate these problems by using a wet etching method and these methods in combination as appropriate for removing the base substrate.

By providing an oxide film layer on the whole or a part of the structure including the silicon carbide thin film exposed by the above-mentioned process, mechanical strength and electrical insulation are imparted particularly to the silicon carbide thin film portion. It becomes possible to do. Further, the oxide film can also be utilized as a protective film for preventing dust and the like from adhering to the surface of the silicon carbide film. The substantial thickness of the oxide film may be appropriately set depending on the purpose, from a thickness of about a natural oxide film obtained by exposing a silicon carbide film to gaseous oxygen to oxidize it to several tens of μn or more formed by depositing silicon oxide. It is possible. Further, of the applied oxide film layer, the oxide film layer formed on the surface of the silicon carbide thin film on the substrate opening side is used as a sacrificial oxide layer to transfer crystal defects and remove the impurities together with the silicon carbide thin film surface again. By making it possible, it becomes possible to obtain a cleaned silicon carbide thin film surface. As described above, by carrying out the manufacturing method of the present invention, it has a surface as flat as that of the base substrate, and the mechanical strength and electrical insulation of the film portion are imparted, and a very clean surface is obtained. Thus, the silicon carbide thin film structure having is easily obtained. Further, according to the method of removing the substrate in the peripheral portion of the silicon carbide thin film structure obtained by the above method to separate the portion of the silicon carbide thin film with the oxide film layer in the opening of the substrate, the oxide film layer provides mechanical strength and A silicon carbide thin film structure including only a silicon carbide thin film portion provided with electrical insulation can be easily obtained.

A method of oxidizing the above-mentioned oxide film layer on the silicon carbide thin film in an atmosphere containing oxygen,
Alternatively, a method of performing wet oxidation in a solution having an oxidizing action, or a method of performing heat treatment after forming a film made of a material containing oxygen on the silicon carbide film is industrially applicable industrially. A desired silicon carbide thin film structure can be produced by the process. Further, the present oxide film can be handled especially as a sacrificial oxide layer. When an oxide layer is formed on a silicon carbide thin film, minute crystal defects such as lattice defects, stacking faults, and impurity defects generated at the interface between the substrate and silicon carbide during the formation of the silicon carbide thin film, and dust and contamination are absorbed by the oxide layer. Therefore, by removing the oxide layer formed on the silicon carbide thin film in the opening of the substrate and exposing the silicon carbide thin film surface again, these defects and the like can be effectively removed together with the oxide layer. Can be expected. In order to form the sacrificial oxide layer having a high effect of removing defects as described above, it is preferable to use a thermal oxidation method in which transfer of defective portions easily occurs. Although an appropriate method can be used for removing the oxide film layer, the characteristic of silicon carbide having strong chemical durability is used.
%, The oxide layer can be easily removed without damaging the surface of the silicon carbide thin film. According to the above method, a silicon carbide thin film substrate having an extremely flat silicon carbide thin film surface with few defects can be easily obtained.

Further, when the underlying substrate used for depositing the silicon carbide thin film is a silicon substrate and the cubic silicon carbide thin film is deposited on the silicon substrate, it has excellent semiconductor characteristics, has an extremely flat surface, and has an electrical property. A silicon carbide substrate having a structure in which a silicon carbide thin film is formed on an insulator can be easily supplied. In this way, it becomes possible to easily obtain a silicon carbide substrate suitable for various semiconductor devices or sensor materials. In addition, a high-quality single crystal silicon carbide thin film having a large area is obtained by performing a heteroepitaxial growth using a silicon substrate as a base substrate by using a chemical vapor deposition method as a method of manufacturing the silicon carbide thin film portion as described above. It can be manufactured under high mass productivity. in this way,
By using the chemical vapor deposition method, a silicon carbide substrate suitable for various semiconductor devices and sensor materials can be easily obtained with high productivity.

[0014]

BEST MODE FOR CARRYING OUT THE INVENTION A silicon carbide thin film structure and a method for manufacturing the same according to the present invention will be described in detail below with reference to the drawings. FIG. 1 is a schematic diagram of an apparatus used in the method for producing a silicon carbide thin film structure of the present invention, FIG. 2 is a process diagram relating to the method for producing a silicon carbide thin film structure according to the first embodiment of the present invention, and FIG. 4A to 4D are process diagrams relating to the method for producing a silicon carbide thin film structure according to the second embodiment of the present invention, and FIG.

[0015]

Example 1 In this example, a single crystal silicon substrate (Si (100) surface, diameter 4 inches, thickness 0.5 mm, surface flatness 0.9 nm Ra) was used as a silicon carbide thin film deposition substrate. A thin film was deposited. To deposit the silicon carbide thin film on the silicon substrate, a hot wall type low pressure vapor deposition method (hereinafter referred to as LPCVD) was used. LPCVD in Figure 1
The outline of the apparatus used for is shown. In the figure, 12 is a growth reactor. A boat 13 for setting materials is arranged in the growth furnace 12, and a heater 15 for controlling the temperature inside the growth furnace 12 is provided around the growth furnace 12. A pipe for supplying a raw material gas or the like is connected to one end of the growth furnace 12, and a vacuum pipe connected to a vacuum exhaust device is connected to the other end. The silicon wafer 11, which is a substrate, was placed upright on the boat 13. In this example, the surface of the silicon substrate was carbonized in an atmosphere of acetylene and hydrogen before depositing the silicon carbide thin film. The silicon carbide thin film is deposited by using dichlorosilane and acetylene as source gases and hydrogen as a carrier gas,
Silicon carbide thin film 14 was formed on the carbonized surface of silicon substrate 11. Table 1 shows the conditions for surface carbonization and the conditions for depositing a silicon carbide thin film.

[0016]

[Table 1]

FIG. 2 is a process chart relating to a method of manufacturing a silicon carbide thin film structure according to the first embodiment of the present invention. The manufacturing process will be described below with reference to the drawings. FIG. 2A shows a structure in which a silicon carbide thin film is formed on the surface of a silicon substrate under the conditions shown in Table 1. A silicon carbide thin film 22 having a thickness of about 1 μm is formed on the carbonized surface of silicon substrate 21. The obtained silicon carbide thin film 22 is reflected by high-speed electron beam diffraction (RHEED).
By pattern analysis, it was confirmed to be single crystal silicon carbide. Next, either surface 22a or 22b of the silicon carbide thin film 22 on the surface of the produced silicon carbide thin film deposition substrate
Are removed in an arbitrary area. This is for removing the underlying silicon substrate 21, and at the same time acts as a mask for etching the underlying substrate. The silicon carbide thin film is removed by reactive ion etching using a mixed gas of CF ₄ and O ₂ (mixing ratio is 4: 1 by volume).
As shown in (b), a window 23 having a size of 5 cm × 5 cm was prepared.

After that, the silicon substrate 21 exposed in the silicon carbide window portion is dissolved and removed using a mixed solution of hydrofluoric acid and nitric acid (mixing ratio is 8: 1 by volume), as shown in FIG. 2 (c). A structure was produced in which the silicon carbide thin film 22 was self-supporting in the substrate opening 23. Thereafter, by steam oxidation (oxidation temperature = 1000 ° C., steam flow rate = 2 ml / min) in a thermal oxidation furnace, a thermal oxide film 24 is formed on the entire surface of the structure shown in FIG. 2D.
A structure with an oxide film was formed. And finally 5%
By removing the oxide film 24 provided on the silicon carbide thin film 22 in the substrate opening 23 by using dilute hydrofluoric acid, as shown in FIG.
Silicon carbide thin film structure 2 with an oxide film as shown in (e)
I got 0.

The surface roughness of the exposed surface 22c of the silicon carbide 22 of the manufactured thin film structure 20 was measured with a scanning tunneling microscope ST.
When measured using H (Scanning Tunneling Microscope), it showed extremely good flatness of 1.2 nmRa. Incidentally, the surface roughness of the silicon carbide thin film deposition substrate surface (22a surface) shown in FIG. 2 (a) is 4.5 nm Ra.
Therefore, it was confirmed that the surface of the silicon carbide thin film 22 produced in this example had a value comparable to the surface roughness of the silicon substrate 21 as the base substrate. In addition, the oxide film 24
It has been confirmed by the film breaking test that the mechanical strength of the silicon carbide thin film is improved compared with the case of the silicon carbide thin film alone. On the other hand, as a result of measuring the surface resistivity of the silicon carbide thin film surface 22c, it was 0.05 Ω · cm, whereas the resistivity between the silicon carbide thin film surface side 22c and the oxide film 24 supporting it was G. (Giga) Ω · cm or more was confirmed, and it was confirmed that the silicon carbide thin film 22 had an electrically insulated structure. Further, the surface 22c of the obtained silicon carbide thin film is subjected to ESCA (Electron Spectroscopy for ChemicaI Ana1y).
As a result of the analysis by sis), no elements other than carbon and silicon which gave a remarkable signal were observed. Any of the above steps can be easily established as a mass production technique, and therefore, by carrying out the present invention, it has extremely good surface flatness, mechanical strength is improved, and carbonization with an insulating film is performed. A silicon thin film structure can be provided.

[0020]

Example 2 In this example, as a substrate for depositing a silicon carbide thin film, a single crystal silicon substrate (Si (100) plane, diameter of about 10) was used.
0 mm (4 inches), thickness 0.5 mm, surface flatness 0.
9 nm Ra) was used. In this example as well, a silicon carbide thin film was deposited using LPCVD as in Example 1, but a polycrystalline silicon carbide thin film was obtained by changing the deposition conditions. Table 2 shows the conditions for producing the polycrystalline silicon carbide thin film.

[0021]

[Table 2]

FIG. 3 is a process diagram relating to a method of manufacturing a silicon carbide thin film structure according to the second embodiment. The manufacturing process will be described below with reference to the drawings. FIG. 3A shows a structure in which a silicon carbide thin film is formed on the surface of a silicon substrate under the conditions shown in Table 2. A silicon carbide thin film 32 having a thickness of about 5 μm was formed on a silicon substrate 31. The obtained silicon carbide thin film 32 was confirmed to be polycrystalline silicon carbide by analysis of a reflection type high-speed electron beam diffraction (RHEED) pattern. The surface roughness was 28 nmRa. By performing the same steps as in Example 1 on the produced silicon carbide thin film deposition substrate,
A structure in which the silicon carbide thin film 32 was self-standing in the substrate opening 33 as shown in FIG. 3B was produced. The oxide film 34 shown in FIG. 3C was formed by wet oxidation for 120 minutes at about 120 ° C. using a mixed solution of sulfuric acid and hydrogen peroxide (mixing ratio is 3: 1 by volume).

In the present embodiment, as shown in FIG. 3D, the lower surface of the structure with an oxide film obtained by using the RF magnetron sputtering method by Ar gas sputtering using a quartz counter get. A silicon oxide sputtered film 35 was newly provided to about 1 μm to reinforce the oxide film. In the subsequent step, the structure in which the silicon carbide thin film surface 32c as shown in FIG. 3E is exposed by removing the oxide film 34 in the substrate opening 33 of the obtained structure in the same manner as in Example 1. The substrate of was obtained. Then, finally, the silicon carbide thin film 32 in the substrate opening 33 is mechanically separated together with the oxide film 34 and the silicon oxide sputtered film 35 laminated thereon to form a silicon carbide thin film structure as shown in FIG. I got a body 30.

When the obtained silicon carbide thin film structure 30 was evaluated, the surface roughness of silicon carbide was 1.3 nmRa, which showed good flatness. In addition, a silicon carbide thin film structure having good surface cleanability and insulating properties due to the underlying oxide films 34 and 35 was obtained as in Example 1.

[0025]

[Embodiment 3] FIG. 4 is a process diagram relating to a method of manufacturing a silicon carbide thin film structure according to Embodiment 3. The manufacturing process will be described below with reference to the drawings. In Example 3, a quartz substrate having a diameter of about 76 mm (3 inches), a thickness of 0.8 mm, and a surface flatness of 0.8 nmRa was used as the silicon carbide thin film deposition substrate. In this embodiment, the target is a silicon carbide sintered body, and
RF magnetron sputtering using r gas as a sputtering gas was performed to obtain an amorphous silicon carbide thin film 42 having a film thickness of about 3 μm on a quartz substrate 41 as shown in FIG. The surface roughness of the obtained amorphous silicon carbide thin film 42 was 43 nmRa. Next, as shown in FIG. 4 (b), the quartz substrate 41 of the silicon carbide thin film deposition substrate thus prepared was etched to 20 m by etching with a mixed solution of hydrofluoric acid and nitric acid.
An opening 43 of m × 20 mm square was provided. Further, as shown in FIG. 4 (c), oxide films 44a and 44b made of silicon oxide having a thickness of about 2 μm are formed on both surfaces of the deposition substrate by using an RF magnetron sputtering method using Ar gas sputtering with quartz as the target. . Further, the whole substrate structure is placed in an Ar atmosphere and annealed at 650 ° C. for 30 minutes, then 5%
By completely removing the oxide film portion 44a on the opening 43 side with dilute hydrofluoric acid, the silicon carbide thin film structure 40 with an oxide film as shown in FIG. 4D could be easily manufactured. The obtained thin film structure 40 was excellent in flatness and film strength as in the results of Examples 1 and 2.

[0026]

As described above in detail, according to the method of manufacturing a silicon carbide thin film structure of the present invention, after forming a silicon carbide thin film on a smooth substrate, the substrate portion is removed to form an oxide film on the silicon carbide thin film. Is added, and the oxide film in the portion facing the substrate is removed to produce a silicon carbide thin film structure. Therefore, the interface side of the silicon carbide thin film with the substrate becomes available, and defects of the surface of the thin film are eliminated by the function of the sacrificial oxide film, so that the silicon carbide thin film has high surface flatness. A silicon carbide thin film structure formed on an insulator or a silicon carbide thin film structure to which an insulator is applied, which has a mechanical strength of the film improved and a surface-cleaned silicon carbide thin film substrate is industrially manufactured. Can be provided to.

[Brief description of drawings]

FIG. 1 is a schematic view of an apparatus used in a method for producing a silicon carbide thin film structure of the present invention.

FIG. 2 is a process drawing related to the method for manufacturing the silicon carbide thin film structure according to the first example of the present invention.

FIG. 3 is a process drawing related to the method for manufacturing the silicon carbide thin film structure according to the second embodiment of the present invention.

FIG. 4 is a process drawing related to the method for manufacturing the silicon carbide thin film structure according to the third embodiment of the present invention.

[Explanation of symbols]

 11 Silicon Substrate 12 Growth Furnace 13 Boat 14 Silicon Carbide Thin Film 15 Heater 20, 30, 40 Silicon Carbide Thin Film Structure 21, 31, 41 Silicon Substrate 22, 32, 42 Silicon Carbide Thin Film 23, 33, 43 Substrate Opening 24, 34 , 44 Oxide film 35 Silicon oxide sputter film 41 Quartz substrate

Claims (7)

[Claims] 1. A silicon carbide thin film is deposited on a substrate, a part of the substrate is removed to provide an opening, and a silicon carbide thin film interface facing the substrate is exposed, and at least one exposed silicon carbide thin film is formed. A silicon carbide thin film is formed by providing an oxide film layer covering the portion, and removing the oxide film layer portion formed on the silicon carbide thin film on the substrate opening side of the oxide film layer to expose the silicon carbide thin film. Method for manufacturing thin film structure. 2. A silicon carbide thin film is deposited on a substrate, a part of the substrate is removed to form an opening, and a silicon carbide thin film interface facing the substrate is exposed, and at least one exposed silicon carbide thin film is formed. A portion of the oxide film layer formed on the silicon carbide thin film on the substrate opening side of the oxide film layer is removed to expose the silicon carbide thin film to oxidize the substrate opening. A method for manufacturing a silicon carbide thin film structure, comprising separating a silicon carbide thin film with a film layer from the substrate. 3. A method of applying an oxide film layer onto the silicon carbide thin film, wherein the method is oxidizing in an atmosphere containing oxygen, or is wet oxidizing in a solution having an oxidizing action, or is made of a material containing oxygen. The method for producing a silicon carbide thin film structure according to claim 1 or 2, wherein the method is performed by any one of a method of performing a heat treatment after forming the film on the silicon carbide film. 4. The silicon carbide thin film according to claim 1, wherein the substrate on which the silicon carbide thin film is deposited is a silicon substrate and the silicon carbide thin film is a cubic silicon carbide thin film. A method for manufacturing a structure. 5. The method for producing a silicon carbide thin film structure according to claim 1, wherein the silicon carbide thin film is produced by a chemical vapor deposition method. 6. A silicon carbide thin film structure in which an oxide film layer is laminated on the back surface of a silicon carbide thin film, wherein the surface of the silicon carbide thin film is exposed by removing the substrate on which the silicon carbide thin film is deposited. A silicon carbide thin film structure characterized in that 7. A silicon carbide thin film structure manufactured by the method according to any one of claims 1 to 5.