SG10201910709PA - Method of inspecting defects, and method of manufacturing mask blank, transfer mask and semiconductor device - Google Patents

Method of inspecting defects, and method of manufacturing mask blank, transfer mask and semiconductor device

Info

Publication number
SG10201910709PA
SG10201910709PA SG10201910709PA SG10201910709PA SG10201910709PA SG 10201910709P A SG10201910709P A SG 10201910709PA SG 10201910709P A SG10201910709P A SG 10201910709PA SG 10201910709P A SG10201910709P A SG 10201910709PA SG 10201910709P A SG10201910709P A SG 10201910709PA
Authority
SG
Singapore
Prior art keywords
semiconductor device
inspecting defects
mask
manufacturing
mask blank
Prior art date
Application number
SG10201910709PA
Inventor
Tanabe Masaru
Uchida Naoki
Original Assignee
Hoya Corp
Hoya Electronics Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoya Corp, Hoya Electronics Singapore Pte Ltd filed Critical Hoya Corp
Publication of SG10201910709PA publication Critical patent/SG10201910709PA/en

Links

SG10201910709PA 2018-11-30 2019-11-15 Method of inspecting defects, and method of manufacturing mask blank, transfer mask and semiconductor device SG10201910709PA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018224842A JP7202861B2 (en) 2018-11-30 2018-11-30 Defect inspection method, mask blank, transfer mask, and semiconductor device manufacturing method

Publications (1)

Publication Number Publication Date
SG10201910709PA true SG10201910709PA (en) 2020-06-29

Family

ID=70907990

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201910709PA SG10201910709PA (en) 2018-11-30 2019-11-15 Method of inspecting defects, and method of manufacturing mask blank, transfer mask and semiconductor device

Country Status (2)

Country Link
JP (1) JP7202861B2 (en)
SG (1) SG10201910709PA (en)

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3656918B2 (en) * 1995-06-12 2005-06-08 オリンパス株式会社 Electric revolver controller
JP5245212B2 (en) * 2006-05-09 2013-07-24 株式会社ニコン Edge inspection device
JP2010261915A (en) * 2009-05-11 2010-11-18 Olympus Corp Substrate inspection device
JP5346243B2 (en) * 2009-06-04 2013-11-20 Ｈｏｙａ株式会社 Mask blank glass substrate manufacturing method, mask blank manufacturing method, exposure mask manufacturing method, and pattern transfer method
WO2012102313A1 (en) * 2011-01-26 2012-08-02 旭硝子株式会社 Method for manufacturing photomask
JP6891795B2 (en) * 2017-01-26 2021-06-18 信越化学工業株式会社 Defect inspection method, sorting method and manufacturing method of photomask blank
JP6903449B2 (en) * 2017-02-22 2021-07-14 Hoya株式会社 Defect inspection equipment and defect inspection method

Also Published As

Publication number Publication date
JP2020086363A (en) 2020-06-04
JP7202861B2 (en) 2023-01-12

Similar Documents

Publication Publication Date Title
SG11202011373SA (en) Reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
SG11201807251SA (en) Reflective mask blank, reflective mask and method of manufacturing semiconductor device
SG11202106508PA (en) Reflective mask blank, reflective mask, and method for manufacturing semiconductor device
SG11202011370VA (en) Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method
SG10201911903XA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG10202007863UA (en) Mask blank, transfer mask, and method of manufacturing semiconductor device
SG10202009397WA (en) Multilayered-reflective-film-provided substrate, reflective mask blank, reflective mask, method of manufacturing reflective mask, and method of manufacturing semiconductor device
SG11202012288PA (en) Semiconductor device and method of manufacturing same
SG11202109240PA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG11202110115VA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11202109059SA (en) Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11202004856XA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
SG10202103395QA (en) Mask blank, method for producing transfer mask and method for producing semiconductor device
SG11202107980SA (en) Reflective mask blank, reflective mask and method of manufacturing the same, and method of manufacturing semiconductor device
EP3886178A4 (en) Semiconductor device and method for manufacturing semiconductor device
SG11202007994YA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
SG11202007542WA (en) Mask blank, phase shift mask, and method of manufacturing semiconductor device
EP3745449A4 (en) Semiconductor device and method for manufacturing semiconductor device
EP4207289A4 (en) Semiconductor device and method for manufacturing semiconductor device
SG11202102268VA (en) Mask blank, transfer mask, and method of manufacturing semiconductor device
SG11202102270QA (en) Mask blank, transfer mask, and method of manufacturing semiconductor device
SG10201701374PA (en) Method for starting up flim forming apparatus, method for manufacturing mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device
SG11202111780XA (en) Semiconductor device manufacturing device and manufacturing method
SG11202109726TA (en) Semiconductor wafer and method of manufacturing semiconductor apparatus
SG11202111977XA (en) Method for inspecting semiconductor and semiconductor inspecting device