SG10201805234YA - Use of non-oxidizing strong acids for the removal of ion-implanted resist - Google Patents

Use of non-oxidizing strong acids for the removal of ion-implanted resist

Info

Publication number
SG10201805234YA
SG10201805234YA SG10201805234YA SG10201805234YA SG10201805234YA SG 10201805234Y A SG10201805234Y A SG 10201805234YA SG 10201805234Y A SG10201805234Y A SG 10201805234YA SG 10201805234Y A SG10201805234Y A SG 10201805234YA SG 10201805234Y A SG10201805234Y A SG 10201805234YA
Authority
SG
Singapore
Prior art keywords
ion
removal
implanted resist
strong acids
oxidizing strong
Prior art date
Application number
SG10201805234YA
Other languages
English (en)
Inventor
Steven Bilodeau
Emanuel I Cooper
Jaeseok Lee
Wonlae Kim
Jeffrey A Barnes
Original Assignee
Entegris Inc
Atmi Korea Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc, Atmi Korea Co Ltd filed Critical Entegris Inc
Publication of SG10201805234YA publication Critical patent/SG10201805234YA/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/311Etching the insulating layers by chemical or physical means
    • H01L21/31127Etching organic layers
    • H01L21/31133Etching organic layers by chemical means
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/42Stripping or agents therefor
    • G03F7/422Stripping or agents therefor using liquids only
    • G03F7/423Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26Bombardment with radiation
    • H01L21/263Bombardment with radiation with high-energy radiation
    • H01L21/265Bombardment with radiation with high-energy radiation producing ion implantation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105After-treatment
    • H01L21/3115Doping the insulating layers
    • H01L21/31155Doping the insulating layers by ion implantation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Weting (AREA)
  • Detergent Compositions (AREA)
SG10201805234YA 2013-12-20 2014-12-19 Use of non-oxidizing strong acids for the removal of ion-implanted resist SG10201805234YA (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361919177P 2013-12-20 2013-12-20
US201462045946P 2014-09-04 2014-09-04
US201462046495P 2014-09-05 2014-09-05

Publications (1)

Publication Number Publication Date
SG10201805234YA true SG10201805234YA (en) 2018-08-30

Family

ID=53403749

Family Applications (2)

Application Number Title Priority Date Filing Date
SG11201605003WA SG11201605003WA (en) 2013-12-20 2014-12-19 Use of non-oxidizing strong acids for the removal of ion-implanted resist
SG10201805234YA SG10201805234YA (en) 2013-12-20 2014-12-19 Use of non-oxidizing strong acids for the removal of ion-implanted resist

Family Applications Before (1)

Application Number Title Priority Date Filing Date
SG11201605003WA SG11201605003WA (en) 2013-12-20 2014-12-19 Use of non-oxidizing strong acids for the removal of ion-implanted resist

Country Status (8)

Country Link
US (2) US20160322232A1 (fr)
EP (1) EP3084809A4 (fr)
JP (1) JP6776125B2 (fr)
KR (1) KR102352475B1 (fr)
CN (1) CN105960699B (fr)
SG (2) SG11201605003WA (fr)
TW (1) TWI662379B (fr)
WO (1) WO2015095726A1 (fr)

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JP7150433B2 (ja) * 2017-12-28 2022-10-11 東京応化工業株式会社 リワーク方法、及び酸性洗浄液
KR102069345B1 (ko) * 2018-03-06 2020-01-22 에스케이씨 주식회사 반도체 공정용 조성물 및 반도체 공정
JP7196177B2 (ja) * 2018-07-20 2022-12-26 富士フイルム株式会社 処理液および処理方法
JP7389886B2 (ja) * 2019-07-11 2023-11-30 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング フォトレジストリムーバ組成物

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JP6776125B2 (ja) 2020-10-28
US20160322232A1 (en) 2016-11-03
KR102352475B1 (ko) 2022-01-18
JP2017508187A (ja) 2017-03-23
CN105960699B (zh) 2019-11-01
US20180240680A1 (en) 2018-08-23
CN105960699A (zh) 2016-09-21
TW201546577A (zh) 2015-12-16
TWI662379B (zh) 2019-06-11
WO2015095726A1 (fr) 2015-06-25
US10347504B2 (en) 2019-07-09
SG11201605003WA (en) 2016-07-28
KR20160098462A (ko) 2016-08-18
EP3084809A4 (fr) 2017-08-23

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